Escolar Documentos
Profissional Documentos
Cultura Documentos
INTRODUCTION
High tech companies lose at least 4-6 percent of annual gross sales due
to
electrostatic discharge (ESD) every year, according to Stephen Halperin,
president of the Electrostatic Discharge Association. “I know of companies
who are aware of ESD losses totaling 10 percent or more of their gross
sales and that is only the losses above which they had budgeted for,”
notes Halperin .
DEPT. OF EEE 1
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
1 ELECTROSTATIC DISCHARGE(ESD)
1.1 What is ESD
Electrostatic Discharge(ESD) is a sudden transfer of charge from a body
or a
Surface to another body at a different potential. Static charge build up is
caused by either friction between two surfaces (called triboelectrification)
or by proximity to an electrostatic field (called induction charging). Bodies
or surfaces may develop triboelectric charges due to
contact,pressure,friction and seperation. Depending upon friction and the
speed with which bodies are coming in contact and seperating the
voltages developed may easily go upto 25kV. Another way of developing
static charges is by induction. If an isolated or ungrounded object comes
inside an electrostatic field it may develop charges. These high voltages
when discharge through a grounded surface cause a large current to flow
through the bodies for a small duration of time. This high current may
cause Electrical Overstress and breakdown of the object.
DEPT. OF EEE 2
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
DEPT. OF EEE 3
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
There are several modes in which an IC package can come under the
effect of an ESD event. These modes have been classified and modeled to
help in the study of various ESD dangers to an IC and to establish an
industry standard for the ESD protection devices. The ESD standards
released by ESDA and JEDEC are commonly used to check the ESD
robustness of IC chips by semiconductor industry.
DEPT. OF EEE 4
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
One of the most common mode of ESD at system Level is the Cable
Discharge Events(CDE). Cable Discharge Event occurs when a statically
charged cable is plugged into a communication port of the system.
Ethernet wires, which are generally very long, and USB cables can acquire
a lot of charge and are the most common cause of a cable discharge
event.
DEPT. OF EEE 5
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
DEPT. OF EEE 6
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
Just placing ESD clamps on the I/O pins and diverting the high ESD
pulse to the ground pins is not enough to ensure the safety of the device.
There may be an ESD event in which the Vcc pin may be stressed with
respect to the ground pin. So we need to put a suitable ESD clamp
between
the power pins. The power clamp needs to have the property of being
able to carry large amount of current without being destroyed itself. The
ESD clamp at the I/O pins and the power clamp together form the basis of
the ESD Protection Circuit at IC level.
DEPT. OF EEE 7
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
ID = µnCox W
A NMOS transistor, with the gate and the source terminal grounded
and the drain connected to the I/O pin of the IC, is most commonly used
as the clamping circuit. Since the gate pin is grounded, the transistor will
never turn on during normal operation,(voltage at the I/O pin is positive).
But if a negative voltage(< −VT ) is applied on the I/O pin the upper
terminal will act as the source. This will make VG = 0 and VS < −VT so
the device will turn on(VGS > 0). In this way a ggNMOS effectively acts
like a diode connected between the source and the drain terminal as
shown in the figure 2.2. Thus this circuit can effectively divert a negative
ESD pulse(NS mode and ND mode) to the ground.
DEPT. OF EEE 8
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
The above circuit has a transient detecting circuit. It follows the VCC
to ground voltage with a small time constant. For slow variation in VCC,
VX will be approximately same as VCC. So the PMOS device will be off and
the NMOS device will be on, it will ensure that the gate voltage of the
power clamp device is kept at zero. When VCC rises very fast, then VX will
become
DEPT. OF EEE 9
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
significantly less that than VCC. The threshold voltage VT of the PMOS
transistors in the transient detecting circuit must be designed in such a
way
that it switches on the power clamp transistor at this instant.
DEPT. OF EEE 10
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
The total input capacitance of the protection circuit in figure 2.3 can
be
varied by choosing the layout spacings in the NMOS and PMOS clamping
transistors properly [6]. It is quite useful for real circuit design that the
variation on the input capacitance of a proposed ESD protection circuit
design can be minimized by simply choosing the suitable device
dimensions and layout spacings in the NMOS and PMOS devices for a
given CMOS process .
DEPT. OF EEE 11
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
DEPT. OF EEE 12
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
Part (a) of figure 2.6 shows the variation of Oxide Breakdown Voltage
BVox, as a function of oxide thickness tox, for NMOS transistor in a 0.25
μm technology. It also shows the avalanche breakdown voltage, Vt1, for
the same values of oxide thickness. It is clear from the graph that the
margin between BVox and Vt1 decreases with oxide thickness. It is
obvious that, for being able to use a NMOS clamp to protect an input gate
oxide, there must be a sufficient margin between oxide breakdown
voltage and avalanche breakdown voltage. Below 50°A, some drain
engineering will be required to improve this margin .
Not all changes brought about by technology scaling are bad for ESD
protection circuits. The use of TiW barrier metals in the contacts has
greatly improved contact integrity and the higher eutectic temperature
prevents the
occurrence of contact melting before the required ESD levels are reached.
Due to smaller channel lengths the efficiency of the parasitic bipolar
transistors in the NMOS increases with decrease in feature size. This
causes the second breakdown current It2 to actually increase with
decrease in feature size [8] .
DEPT. OF EEE 13
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
In the figure 3.1 the part inside box is the schematic representation of
the SCR device used for protection against positive polarity stress on VCC
with respect to VSS. The SCR is triggered into the low impedance state by
the hot carrier generated substrate current from the NMOS transistor M1.
Transistor M2 in connected as a capacitor to follow the VCC voltage.
Transistor M4 acts as an ESD clamp and limits the voltage across the gate
oxide of M2. During normal working M3 keeps the gate voltage of M1
(Vgate) at Vss, so that the SCR can not be turned on. By optimizing M2
and M3 it is ensured that Vgate > Vt1 when an ESD pulse is detected by
the trigger circuit. Where Vt1 is the avalanche breakdown voltage of M1 .
The trigger voltage of the SCR can be tuned by varying the gate
length of the trigger FET M1. The minimum VCC trigger voltages are 6.5V
for 0.5 μm gate length and 9.3V for 5.0 μm gate length. The SCR clamps
Vcc to about 1.4V at low current once it is triggered and achieves an HBM
DEPT. OF EEE 14
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
Figure 3.2: The device structure of the substrate triggering field oxide
device.
DEPT. OF EEE 15
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
NMOS and a STFOD for various values of substrate bias voltage is shown
in figure 3.3. As can be observed from the figure, a drastic improvement
in the value of It2 (per unit channel width) can be achieved by properly
selecting the substrate trigger value. Therefore a STFOD can provide a
much more robust ESD protection in a much smaller area .
Figure 3.3: The dependence of It2 (per unit channel width) on the forward
biased substrate voltage in a STFOD and a NMOS .
DEPT. OF EEE 16
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
Figure 3.4: ESD Protection Scheme for ICs with Power-Down Mode Operation[5]
A ESD protection scheme for ICs with power down mode is proposed
in
[5]. The figure 3.4 shows the schematic of the ESD protection scheme for
ICs
with power-down mode operations. This ESD protection scheme proposes
an
additional ESD bus line (VDD ESD), which is not directly connected to the
external power supply, and is separated into input and output stage by
diode D3. Diodes D1 and D2 are connected between the VDD and VDD
ESD line to block any leakage current from the input/output pads in the
power down mode(VDD = 0). The Diode D3 block any leakage current
between the input and output pads. For saving the layout area, the VDD
ESD bus line can be realized by a different parallel metal layer, which
overlaps the VDD power line .
DEPT. OF EEE 17
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
with SOI the best candidate for continued technology scaling. But these
devices are extremely sensitive towards ESD. Due to non-uniformity of
current through all the gates, only some of the gates are effected and get
destroyed, this severely brings down the safe current limits and the
threshold breakdown values. Any fin that shows a slightly earlier
breakdown, takes over the current and gets destroyed. The heating and
partial damage makes the neighbor fin susceptible for damage too. This
can be seen in figure 3.5 where a group of fins have melt away together.
Therefore, improving the ESD robustness of individual fins leads to more
homogeneous conduction and therefore a better overall ESD robustness.
In the case of multi finger NMOS, gate coupling (which is done by tying
the gate to ground through a large resistance) is used to bring Vt1 below
Vt2 and facilitate more number of parallel npn’s to turn on .
Figure 3.5: Local ESD failure in a multi finger NMOS FinFET device
In case of MugFETs the isolation of the body region from the substrate
impacts the electro-thermal behavior seriously. To optimize the ESD
robustness of a MugFET device we need to ensure a uniform current
conduction in all the fins and to make each fin able to sustain a certain
level of ESD current without being destroyed. To increase the ESD
robustness of individual fins the thermal coupling to the source and drain
regions must be improved. Selective Epitaxial Growth (SEG) is used for
this purpose[11]. After etching the fins and formation of the gate stack,
sillcon is epitaxially grown on the part of the fins not covered by the gate.
This provides additional thermal mass attached directly to the region of
the hot spot and improves the heat conduction to the source and drain
regions. This leads to a strong improvement in the ESD performance of
the device. At the same time the on resistance of the device is reduced
which improves the voltage clamping across the device during an ESD
event and helps to protect against breakdown of gate dielectrics. To
facilitate uniform current flow even at lower robustness of the single fin a
ballasting resistance can be built-in at the drain side .
DEPT. OF EEE 18
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
4 FUTURE ROADMAP
4.1 Nano Thechnology for ESD Protection
As the technology is driving towards smaller chip geometries, higher
frequency and mixed signal and RF integration on the same chip, the
threat of damage from ESD is increasing for all electronic devices. We
saw that the new devices coming with technology scaling are becoming
more and more sensitive towards ESD. And at the same time both the
space and the capacitance budgets circuit designer allow for a product’s
ESD protection are decreasing .
With 100 nm node technology, newer packages like 2000 pin flip-chip
package and stacked die/package are coming up. The large pin count
makes these devices very harsh on CDM ESD protection circuits[1]. Newer
system on chip ICs have integration of analog, digital and RF circuits on
the same package, this leads to very large and complicated packages
with large number of pins and several power lines. The ESD protection
circuit required for such ICs are very complicated, but the space available
for the protection circuit is small. All these factors have created a
roadblock for the use of traditional ESD protection components .
DEPT. OF EEE 19
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
It has been shown that the laminate used for EPI-FLO PVS connector
arrays is suitable for direct embedding in PCB. The PVS connector arrays
provide multiple line ESD protection without using PCB space [14]. Figure
4.2 shows Electronic Polymers Inc. embedded EPI-CORETM in a 4 layer
printed circuit board of a RF module.
DEPT. OF EEE 20
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
CONCLUSION
High tech companies lose at least 4-6 percent of annual gross sales due
to
electrostatic discharge (ESD) every year .So the study of ESD protection
devices worth a lot. This report discusses general ESD protection
principles, basic devices used as ESD protection structures, the
underlying device physics ,recent advancements in the ESD protection
devices and future roadmap .Thus this report gives relevant ideas on ESD
protection devices.
DEPT. OF EEE 21
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
BIBLIOGRAPHY
[1] Charvaka Duvvury. Electrostatic protection for semiconductor
electronics. Distinguished Lecture Series at Georgia Institute of
Technology,January 2008.
[2] Ming-Dou Ker, Jeng-Jie Peng, Hsin-Chin Jiang. ”ESD Test Methods on
Intergated Circuits: An Overview”. IEEE, 2001.
[3] Charvaka Duvvury. Esd protection device issues for ic design. IEEE
custom integrated circuits conference, 2001.
[4] Harald Gossner. Optimization Strategy for ESD Robust Systems.
IWPSD IIT Bombay, December 2007.
[5] Kun-Hsien Lin, Ming-Dou Ker. ”Electrostatic discharge protection
scheme without leakage current path for CMOS IC operating in
powerdown mode condition on a system board”. Microelectronics
Reliability, 46:301–310, 2006.
[6] T.-Y. Chen, C.-Y. Wu, H.-H. Chang, Ming-Dou Ker. ”Design and
analysis of the on-chip ESD protection circuit with a constant input
capacitance for high-precision analog application”. Proc. of IEEE Int.
Symp. on Circuits and Systems, 5:61–64, 2000.
[7] Vijay Reddy Mark Rodder Ajith Amerasekera, Charvaka Duvvury.
Substrate triggering and salicide effects on esd performance and
protection circuit design in deep submicron cmos processes. IEDM,
pages 547–550, Dec 1995.
[8] Ajith Amerasekera, Charvaka Duvvury. ”The impact of technology
scaling on ESD robustness and protection circuit design”. Proc. 16th
EOS/ESD symp., October 1994.
[9] Jeffrey T. Watt, Andrew J. Walker. ”A hot carries triggered SCR for
smart power bus ESD protection”. IEDM., pages 341–344, 1995.
DEPT. OF EEE 22
CUIET
SEMINAR REPORT 2009 ESD PROTECTION DEVICES
DEPT. OF EEE 23
CUIET