Escolar Documentos
Profissional Documentos
Cultura Documentos
method,
XRD,
SEM
I. INTRODUCTION
ZnO is one of the most important materials for the next
generation UV- devices such as transparent electrodes and UV
laser diodes, blue and UV solid state emitters and detectors due
to its large free exciton binding energy (60 meV) and wide band
gap (3.37 eV). In past few years many low dimensional ZnO
structures have been reported such as nano particles, wires,
tubes, marigolds, multi-pods, belts rings, helixes, springs and
combs.
There are various methods for synthesis of ZnO such as ,
thermal evaporation ,chemical evaporation ,deposition method
method, co-precipitation method, spray pyrolysis method,
hydrothermal method, sol-gel method etc.
To get the information regarding the nature of materials it
is important to study the photoconductivity properties.
Photoconductivity arises from the photo generation of electronholes pair in material as a result of absorption of photons due to
which free carrier density increases. Inorganic nanoparticles
have got attention [1-3] of research community due to their
photoconducting properties and their application in a number of
electronic and optical devices. Here in the present work ZnO
NPs have been synthesized by sol-gel method. Photoconducting
and photoluminescence properties have been studied.
II. EXPERIMENTAL SECTION
ISBN 978-1-4799-3158-3
1080
(101)
International Conference on Recent Advances in Mechanical Engineering and Interdisciplinary Developments [ICRAMID - 2014]
10000
(377)
Absorbance (a.u.)
(102)
4000
(103)
6000
(110)
(100)
8000
(002)
Intensity
(a.u.)
0.6
2000
0
30
40
50
0.5
0.4
0.3
0.2
60
2 Thetha (degree)
0.1
300
400
500
600
700
800
900
Wavelength (nm)
Fig. 3. UV-visible absorption of ZnO NPs prepared by sol-gel method.
D. Photoluminescence Study
To investigate the optical properties of ZnO NPs at room
temperature photoluminescence was conducted. A typical
spectrum is shown in Fig. 4, which shows two strong emission
peaks at 387 nm and 485 nm together with a weak peak at 420
nm. The first strong peak at 387 nm is due to recombination of
free excitons through an exciton-exciton collision process while
another two peaks at 420 nm and 485 are due to deep level
emissions [10-13].
ISBN 978-1-4799-3158-3
1081
International Conference on Recent Advances in Mechanical Engineering and Interdisciplinary Developments [ICRAMID - 2014]
14.8
485
PL Intensity (a.u.)
14.6
387
14.4
IV. CONCLUSIONS
ZnO NPs were synthesized by sol-gel method. XRD pattern
indicates formation of wurtizite hexagonal structure of ZnO NPs.
The crystallite size is in range of 37- 46 nm. SEM exhibits
formation of spherical ZnO NPs. UV-visible absorption
spectrum exhibits blue shifting of absorption edge.
Photoluminescence spectrum reveals three emission peaks at
387, 420 and 485 nm. Rise and decay current exhibits
anomalous behavior of photocurrent where in the photocurrent
decreases even during steady illumination.
420
14.2
14.0
13.8
350
375
400
425
450
475
500
525
550
ACKNOWLEDGEMENTS
Wavelength (nm)
REFERENCES
[1]
2.5
[2]
[3]
2.0
[4]
1.5
[5]
Light off
1.0
[6]
0.5
[7]
[8]
Light on
0.0
0
2000
4000
6000
8000
10000
12000
[9]
Time (sec)
Fig. 5.
Rise and decay of photocurrent of ZnO NPs prepared by sol-gel method
ISBN 978-1-4799-3158-3
1082
International Conference on Recent Advances in Mechanical Engineering and Interdisciplinary Developments [ICRAMID - 2014]
[10] S.C. Lyu, Y. Zhang, H. Ruh, H.J. Lee, H.W. Shim, E.K. Suh and C.J. Lee,
Low temperature growth and photoluminescence of well-aligned zinc
oxide nanowires, Chem. Phys. Lett. Vol.363, 134-138, 2002.
[11] E.M. Wong and P.C. Searson, ZnO quantum particle thin films fabricated
by electro-phoretic deposition,Appl. Phys. Lett., Vol.74, 2939 294,1999.
[12] R. Konenkamp, R.C. Word and C. Schlegel, Vertical nanowire lightemitting diode, Appl. Phys. Lett. , Vol.85, 6004 6006,2004.
[13] B. Jin, S. Bae, S. Lee, S. Im, Effects of native defects on optical and
electrical properties of ZnO prepared by pulsed laser deposition ,Mater.
Sci. Eng. B, Vol.71, 301-305,2000.
[14] S. Devi and S.G. Prakash, Photoconductivity of (ZnOCdO) Mixed
Lattices,Natl. Acad. Sci. Lett., Vol.13, 35- 38, 1990.
[15] R.K. Srivastava and S.G. Prakash, Photoconductivity and dark
conductivity of CdS-Se mixed lattice,Natl. Acad. Sci. Lett. , Vol.30, 1112, 2000.
ISBN 978-1-4799-3158-3
1083