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S547S550
I. INTRODUCTION
A Schottky barrier metal-oxide-semiconductor fieldeffect transistor (SB-MOSFET) has source and drain regions composed of silicide rather than heavily doped silicon. The device offers several important advantages over
a conventional MOSFET at nanometer scale, such as
ease of ultra-shallow junction formation, the possibility
of using metal as gate electrode, and elimination of complicated channel doping steps. Therefore, SB-MOSFETs
have been proposed as an alternative to the conventional
MOSFETs for decananometer-scale applications [13].
Most of the previous numerical simulations on SBMOSFETs have been carried out in the classical framework. The feasibility of SB-MOSFETs in reducing the
short-channel effect has been studied by using a commercial simulator in the work of Ref. 1. The Poisson
and continuity equations were solved self-consistently in
Ref. 4 for relatively long channel. By using a similar
approach, Huang et al. investigated the transistor characteristics of SB-MOSFETs with channel length down
to 10 nm [5]. Monte Carlo simulations with modeling
on Schottky barrier tunneling currents have also been
reported [6, 7]. Recently, a compact model using the
current continuity condition between the tunneling and
channel currents has been proposed [8]. On the other
hand, double-gate, thin body SB-MOSFETs were simulated by solving the two-dimensional (2D) Poisson equa E-mail:
mcshin@icu.ac.kr
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1. Poisson Equation
q0
(p(x, z) n(x, z) NA ) ,
si
(1)
(2)
(3)
(4)
4 ml mt kB T
2mt kB T
,
N
=
,
h
~2
~2
(10)
and
F0 (x) = ln(1 + exp(x)).
(11)
3. Numerical Methods
(12)
2. Schr
odinger Equation
(8)
(13)
(14)
(15)
= 0,
~n
(16)
Quantum Mechanical Simulation of Charge Distribution Mincheol Shin and Moongyu Jang and Seongjae Lee
by using the Newton-Raphson method with the boundary conditions given by Eqs. (13)-(15). For inversion
of the resultant sparse matrix, the ILU-CG iteration
method provided by LASpack was employed [12].
The self-consistent calculations proceeded as follows.
We first solved the Poisson equation with an initial guess
for the potential (x, z). The Schr
odinger equation using
the potential obtained from solving the Poisson equation
was then solved to update the quantum electron density. The iteration between the Poisson equation and the
Schr
odinger equation was repeated until self-consistency
was achieved, namely, until the quantum charge density converged to a value within a pre-set error bound.
For better convergence of the self-consistent solution, the
Poisson equation modified for a predictor-corrector approach [13] was solved at the m-th iteration :
q0 (m)
2 (m) =
p
n
(m)
NA ,
(17)
q
si
(m)/T
where p(m) = p0 e
Eq. (9), except that
(m)
and n
q
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is the same as nq of
EF EF + q0 ((m) (m1) ).
(18)
To save computational time in computing nq , the classical approximation was employed for energies above
EF + 12kB T , as described in Ref. 14.
Fig. 4. Conduction band energy at the oxide-channel interface along the lateral (x) direction for NA = 1015 cm3 .
See caption of Fig. 2 for simulation parameters. Dotted lines
are results from classical calculations, and solid lines from
quantum calculations. From the top, Vg = 0.65, 1.0, and 1.5
V, respectively.
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ACKNOWLEDGMENTS
This work has been supported by the Ministry of Information and Communications, Korea.
REFERENCES
Fig. 6. Dependence of threshold gate voltages on the channel length, for NA = (a) 1015 , (b) 1017 , and (c) 1018 cm3 ,
respectively.
IV. CONCLUSION
We have investigated the equilibrium charge distribution and the conduction energy bending in the inver-