AOL1412

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1412 uses advanced trench technology with

a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOL1412 is Pb-free (meets ROHS & Sony
259 specifications). AOL1412L is a Green Product
ordering option. AOL1412 and AOL1412L are
electrically identical.
TM

Ultra SO-8

Top View

VDS (V) = 30V

ID =85A (VGS = 10V)
RDS(ON) < 3.9m (VGS = 10V)
RDS(ON) < 4.6m (VGS = 4.5V)

UIS Tested
Rg,Ciss,Coss,Crss Tested
D

Fits SOIC8
footprint !

Bottom tab
connected to
drain

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage

Maximum
30

Units
V

12

85

TC=25C

Continuous Drain
Current B
Pulsed Drain Current
Continuous Drain
Current H

27

Avalanche Current C

IDSM
IAR

Repetitive avalanche energy L=0.3mH C

EAR

TA=70C

TC=25C

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case

240

mJ
W

3
-55 to 175

Symbol

Alpha & Omega Semiconductor, Ltd.

50

TJ, TSTG

t 10s
Steady-State
Steady-State

40
100

PDSM

TA=70C

21

PD

TC=100C
TA=25C

Power Dissipation

200

TA=25C

Power Dissipation B

84

ID
IDM

TC=100C

RJA
RJC

Typ
19.6
50
1

Max
25
60
1.5

Units
C/W
C/W
C/W

AOL1412

Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=1mA, V GS=0V
VDS=24V, VGS=0V

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS= 12V

VGS(th)
ID(ON)

Gate Threshold Voltage

VDS=VGS ID=250A

1.4

On state drain current

VGS=10V, VDS=5V

200

RDS(ON)

Static Drain-Source On-Resistance

TJ=125C

VGS=10V, ID=20A

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd
tD(on)
tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

1.8

2.4

V
A

3.8

4.6

VDS=5V, ID=20A

112
0.4

6430
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=20A

mA

0.1

VGS=4.5V, ID=20A

DYNAMIC PARAMETERS
Ciss
Input Capacitance

Rg

20

6.2

Diode Forward Voltage

IS=1A,VGS=0V
Maximum Body-Diode Continuous Current

Reverse Transfer Capacitance

Units
V

3.9

Forward Transconductance

Output Capacitance

0.1

5.0

VSD

Crss

0.008

3.2
TJ=125C

gFS

Coss

Max

30

IDSS

IS

Typ

m
m
S

0.5

85

7716

pF

756

pF

352

pF

0.9

1.4

96

115

44

53

nC

17

nC

Gate Drain Charge

13

nC

Turn-On DelayTime

17.5

ns

10

ns

56

ns

10.5

ns

VGS=10V, VDS=15V, RL=0.75,

RGEN=3

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=300A/s

20

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/s

26

25

ns
nC

A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
I. The maximum current rating is limited by bond-wires.
Rev1: June 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

180

30
10V

6V

150

VDS=5V

25
4.5V
20
ID(A)

ID (A)

120
90
VGS=3.5V

60

125

15
10

25C
30

0
0

1.5

VDS (Volts)
Fig 1: On-Region Characteristics

3.5

Normalized On-Resistance

2
VGS=4.5V

4
RDS(ON) (m)

2.5

VGS(Volts)
Figure 2: Transfer Characteristics

3
VGS=10V
2

ID=20A

1.8

VGS=10V

1.6
VGS=4.5V

1.4
1.2
1
0.8

10

15

20

25

30

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

30

60

90

120

150

180

210

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

1.0E+02

10
ID=20A

1.0E+01

125C

1.0E+00
IS (A)

RDS(ON) (m)

125C

25C

1.0E-01
1.0E-02
1.0E-03

1.0E-04

25C

1.0E-05

2
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

12000

10

10000
VDS=15V
ID=20A

Capacitance (pF)

VGS (Volts)

4
2

Ciss

8000
6000
4000
Crss
2000

0
0

20

40

60

80

Coss

100

Qg (nC)
Figure 7: Gate-Charge Characteristics

1000.0

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

200
10s

RDS(ON)
limited

10.0

0.1s

180

1ms

160

10ms

DC

1.0

100

TJ(Max)=175C
TC=25C

0.1

Power (W)

ID (Amps)

100.0

TJ(Max)=175C
TC=25C

140
120
100

0.0
0.1

10

100

VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

80
0.01

0.1

1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

ZJA Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TC+PDM.ZJc .RJc
RJC=1.5C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

10

100

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

200

TC=25C

150
100

TC=150C

50
0
1.0E-07

1.0E-06

1.0E-05

110
100
90
80
70
60
50
40
30
20
10
0

Power Dissipation (W)

ID(A), Peak Avalanche Current

250

1.0E-04

1.0E-03

50

75

100

125

150

175

T CASE (C)
Figure 13: Power De-rating (Note B)

Time in avalanche, tA (s)

Figure 12: Single Pulse Avalanche capability

100

100

80

TJ(Max)=150C
TA=25C

80

60

Power (W)

Current rating ID(A)

25

40
20

60
40
20

0
0

25

50

75

100

125

150

0
0.001

175

T CASE (C)
Figure 14: Current De-rating (Note B)

0.01

0.1

10

100

1000

Pulse Width (s)

Figure15: Single Pulse Power Rating Junction-toAmbient (Note G)

ZJA Normalized Transient

Thermal Resistance

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1

0.1

0.01
Single Pulse
0.001
0.00001

0.0001

0.001

PD

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=60C/W
0.01

0.1

Ton

10

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd.

100

1000

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01

0.9
0.8

1.0E-02

10A

0.6
VDS=12V

VSD(V)

IR (A)

VDS=24V
1.0E-03

20A

0.7

1.0E-04

0.5
5A

0.4
0.3
0.2

1.0E-05

IS=1A

0.1
1.0E-06

0
50

100
150
200
Temperature (C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
70

8
di/dt=800A/us

60

Irm

trr (ns)

Irm (A)

125C

30

25C

2.5

125C

trr

15

25C
1.5

10

125C

10

0.5

25C
0

4
0

10

15

20

25

0
0

30

8
25C
125C

40

25C
30

5
4

Qrr

20

3
2

10

Irm

0
0

200

400

600

800

0
1000

di/dt (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt

Alpha & Omega Semiconductor, Ltd.

20

25

30

3
Is=20A

30

25
trr (ns)

Is=20A

50

15

35

Irm (A)

125C

10

Is (A)
Figure 20: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current

Is (A)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
60

125C

25C

20

25C

trr

15
10

Qrr (nC)

di/dt=800A/us

20

25C
Qrr

20

100
150
200
Temperature (C)
Figure 18: Diode Forward voltage vs. Junction
Temperature

25

40

50

125C

50
Qrr (nC)

125C

5
0
0

200

400

600

800

0
1000

di/dt (A)
Figure 22: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt