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Features
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25C
Continuous Drain
Current B
Pulsed Drain Current
Avalanche Current C
C
70
IDM
200
Maximum Junction-to-Case
11
IAR
30
EAR
135
mJ
100
2.08
-55 to 175
Symbol
1.3
TJ, TSTG
t 10s
Steady-State
Steady-State
50
PDSM
TA=70C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
IDSM
PD
TC=100C
TA=25C
Power Dissipation
14
TA=70C
12
ID
TA=25C
Power Dissipation B
Units
V
85
TC=100C
Continuous Drain
Current G
Maximum
30
RJA
RJC
Typ
14.4
37
1
Max
25
60
1.5
Units
C/W
C/W
C/W
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AOL1414
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250A, VGS=0V
Typ
V
1
TJ=55C
IGSS
VDS=VGS ID=250A
ID(ON)
VGS=10V, VDS=5V
100
100
VGS=10V, ID=20A
1.5
6.5
6.9
8.3
7.5
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
90
VSD
IS=1A,VGS=0V
IS
0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Rg
Gate resistance
2100
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=4.5V, VDS=15V, ID=20A
m
m
S
85
2520
536
0.5
nA
4.9
TJ=125C
RDS(ON)
Output Capacitance
Units
30
VDS=30V, VGS=0V
VGS(th)
Coss
Max
pF
pF
165
231
pF
0.95
1.5
19.7
24
nC
3.6
4.6
nC
Qgs
Qgd
7.9
tD(on)
Turn-On DelayTime
5.9
10
ns
tr
11
17
ns
tD(off)
Turn-Off DelayTime
36.2
55
ns
tf
12
18
ns
ns
nC
nC
trr
IF=20A, dI/dt=100A/s
35
42
Qrr
33
50
A: The value of RJA is measured with the device in a still air environment with T A =25C.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
TC=25C
Continuous
Drain Current
E.
The static characteristics
in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
C
F. These curves are basedTon
the junction-to-case
thermal impedence which is measured with the device mounted to a large heatsink,
C=100
assuming a maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev 5: May 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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AOL1414
60
10V
3.5V
50
50
VDS=5V
3V
40
40
ID(A)
ID (A)
125C
30
30
20
25C
20
VGS=2.5V
10
10
0
0
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
3.5
1.8
ID=20A
Normalized On-Resistance
6.5
VGS=4.5V
RDS(ON) (m )
VGS=10V
1.6
1.4
5.5
5
VGS=4.5V
1.2
VGS=10V
4.5
4
0.8
0
10
20
30
40
50
60
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
Continuous
Drain Current
TC=25C
20
1.0E+02
TC=100C
1.0E+01
16
125C
1.0E+00
IS (A)
ID=20A
RDS(ON) (m )
25
12
1.0E-01
25C
1.0E-02
125C
1.0E-03
8
25C
1.0E-04
1.0E-05
4
2
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AOL1414
5
VDS=15V
ID=20A
3000
Capacitance (pF)
VGS (Volts)
3
2
2500
Ciss
2000
1500
Coss
1000
1
Crss
500
0
0
0
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
250
10s
RDS(ON)
limited
1ms
100s
DC
10
TJ(Max)=175C
TC=25C
TJ(Max)=175C
TC=25C
210
Power (W)
100
ID (Amps)
170
130
90
50
0.1
0.0001
0.1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
10
100
Z JC
Normalized Transient
Thermal Resistance
10
T =100C
C
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJC=1.5C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
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AOL1414
100
60
40
20
0
90
60
30
0.00001
0.0001
0.001
0.01
25
50
75
100
125
150
175
TCASE (C)
Figure 13: Power De-rating (Note B)
100
100
80
80
Power (W)
60
40
60
40
20
20
0
0
25
50
75
100
125
150
0.01
175
TCASE (C)
Figure 14: Current De-rating (Note B)
0.1
10
100
1000
10000
Z JA Normalized Transient
Thermal Resistance
10
D=TonT/T
C=100C
TJ,PK=TA+PDM.ZJA.RJA
RJA=60C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
0.001
Ton
T
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
10
100
1000
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AOL1414
+
+ Vds
VDC
Qgs
Qgd
VDC
DUT
Vgs
Ig
Charge
DUT
Vgs
90%
+ Vdd
VDC
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
Rg
Id
DUT
Vgs
Vgs
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Isd
+
VDC
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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