2SK2003-01MR

N-channel MOS-FET

FAP-IIA Series

600V

> Features
-

2,4

4A

40W

> Outline Drawing

High Speed Switching

Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = 30V Guarantee
Avalanche Proof

> Applications
-

Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25C), unless otherwise specified

Item
Drain-Source-Voltage
Drain-Gate-Voltage(RGS=20K)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range

Symbol
V DS
V DGR
ID
I D(puls)
V GS
PD
T ch
T stg

Rating
600
600
4
16
30
40
150
-55 ~ +150

Unit
V
V
A
A
V
W
C
C

- Electrical Characteristics (TC=25C), unless otherwise specified

Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current

Symbol
V (BR)DSS
V GS(th)
I DSS

Gate Source Leakage Current

Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)

I
R
g
C
C
C
t
t
t
t
I
I
I
V
t
Q

Turn-Off-Time toff (ton=td(off)+tf)

Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge

- Thermal Characteristics
Item
Thermal Resistance

GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV

Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=600V
Tch=25C
VGS=0V
Tch=125C
VGS=30V
VDS=0V
ID=2A
VGS=10V
ID=2A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=4A
VGS=10V
RGS=10
L=100H
Tch=25C

Min.
600
2,5

Typ.
3,0
10
0,2
10
2
4
1000
85
20
20
15
45
15

DRM

rr
rr

Symbol
R th(ch-a)
R th(ch-c)

IF=2xIDR VGS=0V Tch=25C

IF=IDR VGS=0V
-dIF/dt=100A/s Tch=25C

Test conditions
channel to air
channel to case

3,5
500
1,0
100
2,4
1500
130
30
30
25
70
25

DR

SD

Max.

1,1
400
2

Min.

FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56

Typ.

4
16
1,65

Max.
62,5
3,125

Unit
V
V
A
mA
nA

S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
C

Unit
C/W
C/W

2SK2003-01MR

N-channel MOS-FET
600V

2,4

4A

FAP-IIA Series

40W

> Characteristics
Typical Output Characteristics

Drain-Source-On-State Resistance vs. Tch

Tch [C]

Typical Drain-Source-On-State-Resistance vs. ID

Gate Threshold Voltage vs. Tch

ID [A]

Tch [C]

VDS [V]

C [nF]

VDS [V]

Qg [nC]

Allowable Power Dissipation vs. TC

IF [A]

Forward Characteristics of Reverse Diode

VGS [V]

Typical Input Charge

VGS(th) [V]

Typical Capacitance vs. VDS

VGS [V]

gfs [S]

RDS(ON) []

ID [A]

Typical Forward Transconductance vs. ID

ID [A]

ID [A]

VDS [V]

RDS(ON) []

Typical Transfer Characteristics

VSD [V]

Safe operation area

Zth(ch-c) [K/W]

12

11

ID [A]

10

PD [W]

Transient Thermal impedance

Tc [C]

VDS [V]

This specification is subject to change without notice!

t [s]

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