Ordering number : ENN6913

2SA2040/2SC5707
PNP / NPN Epitaxial Planar Silicon Transistors

2SA2040 / 2SC5707
High Current Switching Applications

Applications

Package Dimensions

DC-DC converter, relay drivers, lamp drivers,

motor drivers, strobes.

unit : mm
2045B
[2SA2040 / 2SC5707]
1.5
5.5
0.85
0.7
1.2

7.5

0.8
1.6
0.6

0.5

1 : Base
2 : Collector
3 : Emitter
4 : Collector

2.3

SANYO : TP

2.3

Package Dimensions
unit : mm
2044B
[2SA2040 / 2SC5707]
6.5
5.0
4

2.3
0.5

0.5

0.85

1
0.6

2.3

1.2

0.5

1.5

2.3

7.0

5.5

Adoption of FBET, MBIT process.

Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.

0.8

6.5
5.0
4

7.0

Features

2.5

1.2
0 to 0.2

1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA

2.3

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30101 TS IM TA-3233 No.6913-1/5

2SA2040/2SC5707
Specifications
Note*( ) : 2SA2040
Absolute Maximum Ratings at Ta=25C
Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--50)80

Collector-to-Emitter Voltage

VCES

(--50)80

Collector-to-Emitter Voltage

VCEO

(--)50

Emitter-to-Base Voltage

VEBO

(--)6

(--)8

(--)11

Base Current

IC
ICP
IB

(--)2

Collector Dissipation

PC

Collector Current
Collector Current (Pulse)

Junction Temperature

Tj

Storage Temperature

Tstg

1.0

15

150

55 to +150

Tc=25C

Electrical Characteristics at Ta=25C

Parameter

Symbol

Collector Cutoff Current

ICBO

Emitter Cutoff Current

IEBO
hFE

DC Current Gain
Gain-Bandwidth Product

fT

Output Capacitance

Cob

Conditions

VCE=(--)2V, IC=(--)500mA

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=(--)2A, IB=(--)40mA

Collector-to-Base Breakdown Voltage

V(BR)CBO

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

V(BR)CES
V(BR)CEO

IC=(--)10A, IE=0
IC=(--)100A, RBE=

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IC=(--)1mA, RBE=
IE=(--)10A, IC=0

Unit

(--)0.1

(--)0.1

560
(290)330

VCB=(--)10V, f=1MHz

VCE(sat)

Storage Time

max

200

VCE=(--)10V, IC=(--)500mA

Collector-to-Emitter Saturation Voltage

Fall Time

typ

VCB=(--)40V, IE=0
VEB=(--)4V, IC=0

IC=(--)3.5A, IB=(--)175mA
IC=(--)2A, IB=(--)40mA

Turn-On Time

Ratings
min

MHz

(50)28

pF

(--230)160 (--390)240

mV

(--240)110 (--400)170

mV

(--)0.83

(--)1.2

(--50)80

80

(--)50

(--)6

ton
tstg

See specified test circuit.

(40)30

ns

See specified test circuit.

(225)420

ns

tf

See specified test circuit.

25

ns

Swicthing Time Test Circuit

PW=20s
D.C.1%

IB1
IB2

OUTPUT

INPUT
VR
50

RB
+
100F

RL
+
470F

VBE= --5V
VCC=25V
20IB1= --20IB2= IC=2.5A
For PNP, the polarity is reversed.

No.6913-2/5

2SA2040/2SC5707
IC -- VCE

A
--50m
A
m
0
4
---30mA

--5

mA

0
--1

--4

--20mA

--3

--10mA

--2

--1

--0.4

--0.8

--1.2

--1.6

Collector-to-Emitter Voltage, VCE -- V

10mA

--4

Ta=
75
25C C
--25
C

--3

--1

0.8

1.2

1.6

2.0

Collector-to-Emitter Voltage, VCE -- V

IT00207

IC -- VBE

2SC5707
VCE=2V

Collector Current, IC -- A

--5

--2

0.4

IT00206

--6

IB=0

2SC5707

2SA2040
VCE= --2V

--7

Collector Current, IC -- A

20mA

--2.0

IC -- VBE

--8

6
5
4
3
2
1
0

0
0

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

Base-to-Emitter Voltage, VBE -- V

--1.4

2SA2040
VCE= --2V

100
7
5

Ta=75C

25C
--25C

5 7 --1.0

Collector Current, IC -- A

10
0.01

5 7 --10
IT00210

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV

2SA2040
IC / IB=20

3
2
--100
7
5

5C
Ta=7
C
--25

3
2

5C

--10
7
5
3
2
--1.0
--0.01

5 7 --0.1

5 7 --1.0

Collector Current, IC -- A

5 7 --10
IT00212

2SC5707
VCE=2V

5 7 0.1

5 7 1.0

Collector Current, IC -- A

VCE(sat) -- IC

1.4
IT00209

5 7 --0.1

1.2

1.0

100

0.8

hFE -- IC

10
--0.01

0.6

DC Current Gain, hFE

Ta=75C
25C
--25C

0.4

Base-to-Emitter Voltage, VBE -- V

1000

0.2

IT00208

hFE -- IC

1000

DC Current Gain, hFE

Ta=7
5C
25C
--25
C

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV

IB=0

--1000
7
5

70mA
60mA
50mA
40mA
30mA

80mA

90mA
6

mA

Collector Current, IC -- A

--6

IC -- VCE

--90mA
--80mA
--70mA
--60mA

100

2SA2040

Collector Current, IC -- A

--7

5 7 10
IT00211

VCE(sat) -- IC

1000
7
5

2SC5707
IC / IB=20

3
2
100
7
5

5C

3
2

7
Ta=
--25

10
7
5

25

3
2
1.0
0.01

5 7 0.1

5 7 1.0

Collector Current, IC -- A

5 7 10
IT00214

No.6913-3/5

2SA2040/2SC5707
VCE(sat) -- IC

3
2

--1000
7
5
3
2

5C

--100
7
5

7
Ta=
--25C

3
2
--10
--0.01

5 7 --0.1

25C

5 7 --1.0

VBE(sat) -- IC

7
5
3
2

Ta= --25C

7
5

75C

25C

--100
--0.01

5 7 --0.1

5 7 --1.0

100
7
5

5
Ta=7

3
2

C
25C

C
--25
2

5 7 0.1

5 7 1.0

5 7 10
IT00215

VBE(sat) -- IC

2SC5707
IC / IB=50

7
5
3
2

1000

Ta= --25C

7
5

75C

25C

100
0.01

5 7 --10
IT00216

Collector Current, IC -- A

5 7 0.1

5 7 1.0

2SA2040
f=1MHz

2SC5707
f=1MHz

Output Capacitance, Cob -- pF

2
100
7
5
3
2
10
7
5

5 7 10
IT00217

Cob -- VCB

Collector Current, IC -- A

Cob -- VCB

Output Capacitance, Cob -- pF

3
2

2
100
7
5
3
2
10
7
5
3

2
5 7 --0.1

5 7 --1.0

5 7 --10

Collector-to-Base Voltage, VCB -- V

5 7 0.1

3
2

100
7
5
3
2

10

5 7 1.0

5 7 10

IT00219

f T -- IC

2SC5707
VCE=10V

Gain-Bandwidth Product, f T -- MHz

1000

2SA2040
VCE= --10V

Collector-to-Base Voltage, VCB -- V

IT00218

f T -- IC

1000

Gain-Bandwidth Product, f T -- MHz

1000
7
5

10000

2SA2040
IC / IB=50

--1000

3
2

Collector Current, IC -- A

Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV

Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV

--10000

2SC5707
IC / IB=50

10
0.01

5 7 --10
IT00213

Collector Current, IC -- A

VCE(sat) -- IC

10000
7
5

2SA2040
IC / IB=50

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV

--10000
7
5

5
3
2

100
7
5
3
2

10
5 7--0.01

5 7 --0.1

5 7 --1.0

Collector Current, IC -- A

5 7 --10
IT00220

5 7 0.01

5 7 0.1

5 7 1.0

Collector Current, IC -- A

5 7 10
IT00221

No.6913-4/5

2SA2040/2SC5707
ASO

1.0
7
5
3
2
0.1
7
5
3
2

2SA2040 / 2SC5707
Tc=25C
Single Puls
For PNP, the minus sign(--)is omitted

0.01
0.1

5 7 1.0

1.0

0.8

No

0.6

he

at

sin

0.4

0.2

5 7 10

Collector-to-Emitter Voltage, VCE -- V

5 7 100
IT02971

20

40

60

80

100

120

140

Ambient Temperature, Ta -- C

160

IT02972

PC -- Tc

18

Collector Dissipation, PC -- W

Collector Dissipation, PC -- W

Collector Current, IC -- A

3
2

2SA2040 / 2SC5707
s
0

10
7
5

10

100ms 10ms
50
1m 0s
IC=8A
DC
s
Op
era
DC
tio
Op
n(
era
Tc
tio
=2
n(
5
Ta
C)
=2
5
C)

PC -- Ta

1.2

ICP=11A

2SA2040 / 2SC5707

16
15
14
12
10
8
6
4
2
0
0

20

40

60

80

100

120

Case Temperature, Tc -- C

140

160

IT02973

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2001. Specifications and information herein are subject to
change without notice.
PS No.6913-5/5