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Revision History
The following table shows the revision history for this document.
Version
Revision
08/02/04
1.0
09/09/04
1.1
06/24/08
1.2
Removed SSTL3 rows from Table 2-1, page 14. Updated Appendix A, References.
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Table of Contents
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
5
6
7
Transmission Lines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Return Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Single-Ended Signaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Modes and Attributes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Thresholds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Topologies and Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Unidirectional Topologies and Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bidirectional Topology and Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bidirectional Multi-Point Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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16
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21
25
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Appendix A: References
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Preface
Guide Contents
This manual contains the following chapters:
Appendix A, References
Provides additional information on references listed in this document.
Additional Documentation
The following documents are also available for download at
http://www.xilinx.com/virtex4.
www.xilinx.com
1-800-255-7778
Clocking Resources
SelectIO Resources
System Monitor
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1-800-255-7778
Typographical Conventions
Typographical Conventions
This document uses the following typographical conventions. An example illustrates each
convention.
Convention
Meaning or Use
References to other documents
Emphasis in text
http://www.xilinx.com/virtex4
Italic font
Underlined Text
Example
www.xilinx.com
1-800-255-7778
www.xilinx.com
1-800-255-7778
Chapter 1
PCB Structures
Transmission Lines
Return Currents
PCB Structures
PCB technology has not changed significantly in the last few decades. An insulative
substrate material (usually FR4, an epoxy/glass composite) with copper plating on both
sides has portions of copper etched away to form conductive paths. A number of layers of
plated and etched substrates are glued together in a stack with additional insulative
substrates in-between the etched substrates. Holes are drilled through the stack.
Conductive plating is applied to these holes, selectively forming conductive connections
between the etched copper of different layers.
While there are advancements the areas of material properties, number of stacked layers,
geometries, and drilling techniques (allowing holes that only penetrate only a portion of
the stackup), the basic structures of PCBs have not changed. These structures, formed
through the processes outlined above, are abstracted to a set of physical/electrical
structures: Traces, Planes (or planelets), vias, and pads.
Traces
A trace is a physical strip of metal (usually copper) making an electrical connection
between two or more points on an X-Y coordinate of a PCB. Traces carry signals between
these points.
Planes
A plane is an uninterrupted area of metal covering the entirety of a PCB layer. A planelet,
a variation of a plane, is an uninterrupted area of metal covering only a portion of a PCB
layer. Typically a number of planelets exist in one PCB layer. Planes and planelets
distribute power to a number of points on a PCB. They are very important in the
transmission of signals along traces.
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Vias
A via is a physical piece of metal making an electrical connection between two or more
points in the z-space of a PCB. Vias carry signals or power between layers of a PCB. In
current plated-through-hole (PTH) technology, a via is formed by plating the inner surface
of a hole drilled through the PCB. A via is formed in current microvia technology (also
known as High Density Interconnect or HDI) with a laser by ablating the substrate
material and deforming the conductive plating, in the process forming a conductive
connection. These types of Microvias formed cannot penetrate more than one or two
layers, however, they can be stacked or stair-stepped to form vias traversing the full board
thickness.
Lands
For the purposes of soldering surface mount components, pads on outer layers are
typically referred to as lands or solder lands. Making electrical connections to these lands
usually requires vias. Due to manufacturing constraints of PTH technology, it is rarely
possible to place a via inside the area of the land. Instead, this technology uses a short
section of trace connecting to a surface pad, and minimum dimension specifications exist
defining the minimum length of the connecting trace. Microvia technology is not
constrainted and vias can be placed directly in the area of a solder land.
Dimensions
The major factors defining the dimensions of the PCB are FPGA package geometries, PCB
manufacturing limits, and system compliance. Other factors such as Design For
Manufacturing (DFM) and reliability impose further limits, but as these are application
specific, they are not covered here.
The dimensions of the FPGA package, in combination with PCB manufacturing limits
define most of the geometric aspects of the above structures, both directly and indirectly.
This in itself constrains the PCB designer significantly. The package ball pitch (1.0 mm for
FF packages; 0.8 mm for SF packages) defines the land pad layout. The minimum surface
feature sizes of current PCB technology define the via arrangement in the area under the
device. Minimum via diameters and keep-out areas around those vias defined by the
10
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Transmission Lines
PCB manufacturer limit the amount of space available in-between vias for routing of
signals in and out of the via array underneath the device. This defines the maximum trace
width in these breakout traces. PCB manufacturing limits constrain the minimum trace
width and minimum spacing.
The number of signal layers necessary to accommodate an FPGA is defined by the number
of signal layers and the number of plane layers. The number of signal layers are defined by
the number of I/O signal traces to routed in and out of an FPGA package (usually
following the total User I/O count of the package). The number of plane layers is defined
by the number of power and ground plane layers necessary to bring power to the FPGA
and to provide references and isolation for signal layers. Most PCBs for large FPGAs range
from 12 to 22 layers.
System compliance often defines the total thickness of the board. Along with the number
of board layers, this defines the maximum layer thickness, and therefore the spacing in the
z direction of signal and plane layers to other signal and plane layers. Z-direction spacing
of signal trace layers to other signal trace layers affects crosstalk. Z-direction spacing of
signal trace layers to reference plane layers affects signal trace impedance. Z-direction
spacing of plane layers to other plane layers affects power system parasitic inductance.
Z-direction spacing of signal trace layers to reference plane layers (defined by total board
thickness and number of board layers) is a defining factor in trace impedance.Trace width
(defined by FPGA package ball pitch and PCB via manufacturing constraints) is another
factor in trace impedance. A designer has little control over trace impedance in area of the
via array beneath the FPGA. When traces escape the via array, their width can change to
the width of the target impedance (usually 50 single-ended or 100 differential).
Bypass capacitor placement and discrete termination resistor placement are other areas of
trade-off optimization. DFM constraints often define a keep-out area around the perimeter
of the FPGA (device footprint) where no discrete components may be placed. The purpose
of this is to allow room for rework where necessary. For this reason, the area just outside
the keep-out area is one where components will compete for placement. It is up to the PCB
designer to determine the high priority components. Bypass capacitor placement
constraints are described in Chapter 4, Power Distribution System. Termination resistor
placement constraints must be determined through signal integrity simulation, using IBIS
or SPICE.
Transmission Lines
The combination of a signal trace and a reference plane forms a transmission line. All I/O
signals in a PCB system travel through transmission lines.
For single-ended I/O interfaces, both the signal trace and the reference plane are necessary
to transmit a signal from one place to another on the PCB. For differential I/O interfaces,
the transmission line is formed by the combination of two traces and a reference plane.
While the presence of a reference plane is not strictly necessary in the case of differential
signals, it is necessary for practical implementation of differential traces in PCBs.
Good signal integrity in a PCB system is dependent on having transmission lines with
controlled impedance. Impedance is determined by the geometry of the traces and the
dielectric constant of the material in the space around the signal trace and between the
signal trace and the reference plane.
The dielectric constant of the material in the vicinity of the trace and reference plane is a
property of the PCB laminate materials, and in the case of surface traces, a property of the
air or fluid surrounding the board. PCB laminate is typically a variant of FR4, though it can
also be an exotic material.
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11
While the dielectric constant of the laminate varies from board to board, it is fairly constant
within one board. Therefore the relative impedance of transmission lines in a PCB is
defined most strongly by the trace geometries and tolerances.
Return Currents
An often neglected aspect of transmission lines and their signal integrity is return current.
It is incorrect to assume that a signal trace by itself forms a transmission line. Currents
flowing in a signal trace have an equal and opposite complimentary current flowing in the
reference plane beneath them. The relationship of the trace voltage and trace current to
reference plane voltage and reference plane current defines the characteristic impedance of
the transmission line formed by the trace and reference plane. While interruption of
reference plane continuity beneath a trace is not as dramatic in effect as severing the signal
trace, the performance of the transmission line and any devices sharing the reference plane
is affected.
It is important to pay attention to reference plane continuity and return current paths.
Interruptions of reference plane continuity, such as holes, slots or isolation splits, cause
significant impedance discontinuities in the signal traces. They can also be a significant
contributor to ground bounce and Power Distribution System (PDS) noise from
simultaneously switching outputs. The importance of return current paths cannot be
underestimated.
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Chapter 2
SelectIO Signaling
The SelectIO term in the Virtex-4 device family refers to the general-purpose I/O and its
various settings. With over 20 I/O standards and over 110 variants within these standards,
the highly flexible SelectIO resource offers a wide array of choices for designing I/O
interfaces.
This chapter provides some strategies for choosing I/O standard, topology, and
termination, and offers guidance on simulation and measurement for more detailed
decision making and verification. In many cases, higher-level aspects of the system (other
device choices or standards support) define the I/O interfaces to be used. In cases where
such constraints are not present, it is up to the system designer to choose I/O interface
standards and optimize them according to the purpose of the system.
This chapter contains the following sections:
Interface Types
Single-Ended Signaling
Interface Types
To better address the specifics of the various interface types, it is necessary to first break
interfaces into categories. Two relevant divisions are made:
Single Data Rate (SDR) interfaces versus Double Data Rate (DDR) interfaces
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Single-Ended Signaling
A variety of single-ended I/O standards are available in the Virtex-4 FPGA IOB
configuration options. Table 2-1 lists all available single-ended I/O standards. The
checkmarks indicate which features are available or can be configured for each I/O
standard.
Table 2-1:
I/O Standard
VREF Input
Threshold
Recommended Mode
Drive
Strength
Slew
Rate
Pull-up
Pull-down
Weak
Keeper
Unidirectional
Bidirectional
LVTTL
LVCMOS33
LVCMOS25
LVCMOS18
LVCMOS15
LVDCI33
LVDCI25
LVDCI18
LVDCI15
HSLVDCI33
HSLVDCI25
HSLVDCI18
HSLVDCI15
HSTL Class I
HSTL Class II
HSTL Class IV
HSTL18 Class I
HSTL18 Class II
14
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Single-Ended Signaling
Table 2-1:
I/O Standard
VREF Input
Threshold
Drive
Strength
Slew
Rate
Pull-up
Pull-down
Recommended Mode
Weak
Keeper
Unidirectional
Bidirectional
HSTL18 Class IV
SSTL2 Class 1
SSTL2 Class 2
SSTL18 Class 1
SSTL18 Class 2
GTL
GTL+
GTL DCI
GTL+ DCI
PCI-33
PCI-66
PCI-X
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Input Thresholds
The input circuitry of the single-ended standards listed in Table 2-1 fall into two categories:
those with fixed input thresholds and those with input thresholds set by the VREF voltage.
The use of VREF has three advantages:
It allows for input thresholds to be closer together, which reduces the need for a large
voltage swing of the signal at the input receiver
Two 2.5V I/O standards that illustrate this are LVCMOS25 and SSTL2 Class 1. The
thresholds for 2.5V LVCMOS are set at 0.7V and 1.7V (necessitating that the signal at the
receiver swing a full 1.0V at minimum to make a logic transition). The thresholds for SSTL2
Class 1 are set at VREF 0.15V and VREF + 0.15V, or for a nominal VREF of 1.25V, set at 1.1V
and 1.4V (necessitating that the signal at the receiver only swing 0.3V at minimum to make
a logic transition). This smaller required swing allows for higher frequency of operation in
the overall link. A smaller swing at the driver means reduced DC power is required with
less transient current. The one drawback to the use of VREF is that the semi-dedicated VREF
pins of the bank cannot be used as I/Os they must all be connected to an external
reference voltage with a decoupling capacitor for each VREF pin. For more information on
VREF decoupling and decoupling of all other supplies, see Chapter 4, Power Distribution
System.
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Single-Ended Signaling
something as limited as the VIL and VIH of the receiver, or it might define every aspect of
the interface, including driver impedance and slew rate, PCB trace length and topology,
value and position of passive termination, the maximum input capacitance of a receiving
device, and even the maximum number of receivers.
It is up to the designer to apply the standard in question to the system in which it is
working. There are many decisions to make with respect to topologies and termination,
which determine the signal integrity of the interface. It is of utmost importance that the
signal integrity of each interface is verified through both simulation and measurement.
Termination generally refers to impedance-matching or impedance-compensating devices
that are used to maintain signal integrity in an interface. While many types of elements can
be used as terminators (such as, resistors, capacitors, diodes), this discussion is limited to
resistive termination. In general, capacitor and diode termination techniques are more
complicated and are not covered here.
RP = Z0 (50 )
RO (25 )
Z0 (50 )
ug072_c3_01_082904
Figure 2-1:
RO (25 )
RS = Z0 R0 (25 )
Z0 (50 )
ug072_c3_02_082904
Figure 2-2:
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LVDCI
RO = RVRN = RVRP Z0 (50 )
Z0 (50 )
ug072_c3_03_082904
Figure 2-3:
LVCMOS_6F
RO Z0 (50 )
Z0 (50 )
ug072_c3_04_082904
Figure 2-4:
In general, parallel resistive termination (RP) has a value equal to the characteristic
impedance (Z0) of the transmission line it is terminating. Series resistive terminations (RS)
have a value equal to the characteristic impedance of the transmission line (Z0) minus the
output impedance of the driver (RO) to which they are connected. Controlled-impedance
drivers are tuned such that the driver output impedance (RO) is equal to the characteristic
impedance (Z0) of the transmission line it is terminating.
Assuming transmission lines with 50 characteristic impedance and a driver output
impedance (RO) of 25 , a 25 series termination (Figure 2-2) or a 50 parallel
termination (Figure 2-1) is appropriate. Controlled-impedance drivers, whether
implemented with DCI or with weak LVCMOS drivers, should be sized to have an output
impedance (RO) of 50 . This corresponds to VRN and VRP resistors equal to 50 for DCI.
Weak LVCMOS drivers of 6 mA to 8 mA drive strength have an output impedance
approximately equal to 50 (Figure 2-3).
Typically, parallel terminations have best performance when VTT (the voltage source
connected to the parallel termination resistor) is equal to half of the signaling voltage. For
2.5V signals (VCCO = 2.5V), VTT is ideally 1.25V. In cases where this voltage is not available,
it is advisable to use a Thevenin parallel termination. Thevenin parallel termination
consists of a voltage divider with a parallel equivalent resistance (RPEQ) equal to the
characteristic impedance of the transmission line (50 in most cases). The divided voltage
point is designed to be at VTT. Figure 2-5 illustrates a Thevenin parallel termination
powered from 2.5V VCCO, made up of two 100 resistors, resulting in a VTT of 1.25V and
a parallel equivalent resistance (RPEQ) of 50 .
Parallel termination can be less desirable than series termination or controlled-impedance
drivers because it dissipates more power. This trade-off must be weighed against other
trade-offs to determine the optimum termination topology for an interface.
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Single-Ended Signaling
VCCO = 2.5V
RPT = 2 x Z0 (100 )
RO (25 )
Z0 (50 )
VTTEQ = 1.25V
RPT = 2 x Z0 (100 )
RPEQ = (
1
1 )1 = 50
+
100 100
ug072_c3_05_082904
Figure 2-5:
Table 2-2 lists I/O interface types that can be used with the unidirectional point-to-point
topology.
Table 2-2:
LVTTL
LVCMOS
LVDCI
SSTL Class I
HSTL Class I
HSTL Class III
GTL
GTL+
GTLDCI
GTL+DCI
LVTTL and LVCMOS do not specify any canonical termination method. Series termination
at the driver or parallel termination at the receiver are both appropriate.
LVDCI implicitly uses controlled-impedance driver termination. No form of termination is
needed at the receiver.
HSTL Class I and HSTL Class III specify a parallel termination at the receiver. In the case of
HSTL Class I, the termination voltage VTT is defined as half of the supply voltage VCC. In
the case of HSTL Class III, the termination voltage VTT is defined as equal to the supply
voltage VCC. The designer may elect either not to use termination at all or to use a different
termination, such as series termination at the driver. There are a number of reasons why
this selection might be advantageous in a given system. It is up to the designer to verify
through simulation and measurement that the signal integrity at the receiver is adequate.
SSTL Class I specifies both series termination at the driver and parallel termination at the
receiver. The termination voltage VTT is defined as half of the supply voltage VCC. The
designer may elect either not to use termination at all or to use a different termination, such
as only series termination at the driver or only parallel termination at the receiver. There
are a number of reasons why this might be advantageous in a given system. It is up to the
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19
designer to verify through simulation and measurement that the signal integrity at the
receiver is adequate.
GTL and GTL+ specify and require parallel termination both at the driver and at the
receiver. The designer may not elect to omit either of these terminations because the driver
is open drain, meaning that the driver is not capable of driving a High signal and depends
on the parallel termination to generate High logic levels.
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Single-Ended Signaling
Input 4
Output
Z0 (50 )
Z0 (50 )
Z0 (50 )
Z0 (50 )
Z0 (50 )
Z0 (50 )
Z0 (50 )
VCCO
2 x Z0 (100 )
Input 1
Input 2
Input 3
2 x Z0 (100 )
ug072_c3_06_082904
Figure 2-6:
The main transmission line should be kept as short as possible. Lengths up to 20 inches or
more are practical for most I/O standards as long as precise trace impedance is maintained
and crosstalk sources are avoided. The lengths of interim segments of the main
transmission line need not be equal. Their relative lengths may be arbitrary. Receivers at
different points along the main transmission line receive the signal with varying amounts
of delay, but all signal rise times are similar.
Stubs stretching from the main transmission line to the individual receivers must be kept as short as
possible. The longer these stubs become, the more corrupted the received waveforms are.
Simulation and measurement are required to assess signal integrity at the individual
receivers.
Table 2-3 lists I/O interface types that can be used with the unidirectional point-to-point
multi-drop topology.
Table 2-3:
LVTTL
LVCMOS
LVTTL and LVCMOS do not specify any canonical termination method. Parallel
termination at the end of the long t-line is the only appropriate termination method.
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21
good signal integrity is to keep the topology symmetrical. Thus any termination used on
one side of the link should also be used on the other side of the link. Series termination
(Figure 2-8) is rarely appropriate for bidirectional interfaces as incoming signals are
attenuated by the series resistor of the receiving transceiver. Parallel termination
(Figure 2-7) always achieves better signal levels at both receivers. Controlled-impedance
drivers, whether crudely controlled in the form of a weak LVCMOS driver or adaptively
controlled in the form LVDCI or HSLVDCI, also can have good results as shown in
Figure 2-9, Figure 2-10, and Figure 2-11 (implemented with a low-drive strength LVCMOS
driver). Always use IBIS simulation to determine the optimal resistor, VTT voltage level
and VRN/VRP reference resistor values for these terminations.
VTT
VTT
RP = Z0 (50 )
RP = Z0 (50 )
RO (25 )
Z0 (50 )
RO (25 )
ug072_c3_07_082904
Figure 2-7:
RO (25 )
RS = Z0 R0 (25 )
Z0 (50 )
RS = Z0 R0 (25 )
RO (25 )
ug072_c3_08_082904
Figure 2-8:
ug072_c3_09_082904
Figure 2-9:
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Single-Ended Signaling
VREF
ug072_c3_10_082904
Figure 2-10:
ug072_c3_11_082904
Figure 2-11:
In general, parallel resistive termination (RP) has a value equal to the characteristic
impedance Z0 of the transmission line it is terminating. Controlled-impedance drivers are
tuned such that the driver output impedance (RO) is equal to the characteristic impedance
(Z0) of the transmission line it is terminating.
Assuming transmission lines with 50 characteristic impedance and a driver output
impedance of 25 , 50 parallel terminations are appropriate (Figure 2-7). Controlledimpedance drivers, whether implemented with DCI or with weak LVCMOS drivers,
should be sized to have an output impedance (RO) of 50 . This corresponds to VRN and
VRP resistors equal to 50 for DCI (Figure 2-9 and Figure 2-10). Weak LVCMOS drivers of
6 mA to 8 mA drive strength have an output impedance approximately equal to
50 (Figure 2-11).
Typically, parallel terminations have the best performance when VTT (the voltage source
connected to the parallel termination resistor) is equal to half of the signaling voltage. For
2.5V signals (VCCO = 2.5V), VTT is ideally 1.25V. In cases where this voltage is not available,
it is advisable to use a Thevenin parallel termination. Thevenin parallel termination
consists of a voltage divider with a parallel resistance equal to the characteristic impedance
of the transmission line (50 in most cases). The divided voltage point is designed to be at
VTT. Figure 2-12 illustrates a Thevenin parallel termination powered from 2.5V VCCO,
made up of two 100 resistors, resulting in a VTT of 1.25V and a parallel equivalent
resistance (RPEQ) of 50 .
Parallel termination can be less desirable than series termination or controlled-impedance
drivers because it dissipates more power. This trade-off must be weighed against other
trade-offs to determine the optimum termination topology for an interface.
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23
VCCO = 2.5V
RPT = 2 x Z0 (100 )
VCCO = 2.5V
RPT = 2 x Z0 (100 )
RO (25 )
Z0 (50 )
RPT = 2 x Z0 (100 )
RPT = 2 x Z0 (100 )
RO (25 )
VTTEQ = 1.25V
ug072_c3_12_082904
Figure 2-12:
Table 2-4 lists I/O interface types that can be used with the bidirectional point-to-point
topology.
Table 2-4:
LVTTL
LVCMOS
LVDCI
HSLVDCI
SSTL CLASS II
SSTL CLASS II DCI
HSTL CLASS II
HSTL CLASS II DCI
HSTL CLASS IV
HSTL CLASS IV DCI
GTL
GTL+
GTL DCI
GTL + DCI
LVTTL and LVCMOS do not specify any canonical termination method. Series termination
is not recommended for bidirectional interfaces. Parallel termination and weak drivers,
however, are both appropriate.
LVDCI and HSLVDCI both implicitly use controlled-impedance driver termination.
HSTL Class II and HSTL Class IV specify parallel termination at both transceivers. In the
case of HSTL Class II, the termination voltage VTT is defined as half of the supply voltage
VCCO. In the case of HSTL Class IV, the termination voltage VTT is defined as equal to the
supply voltage VCCO. The designer may elect either not to use termination at all or to use
a different termination. It is up to the designer to verify through simulation and
measurement that the signal integrity at the receiver is adequate.
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Single-Ended Signaling
SSTL Class II specifies both series termination and parallel termination. The termination
voltage VTT is defined as half of the supply voltage VCCO. While the canonical standard
calls for this, better performance is achieved when only parallel termination is used at both
transceivers. The designer may elect to use either the canonical standard termination or a
modified termination (or no termination at all). It is up to the designer to verify through
simulation and measurement that the signal integrity at the receiver is adequate.
GTL and GTL+ specify and require parallel termination at both transceivers. The designer
may not elect to omit either of these terminations because the driver is open drain,
meaning that the driver is not capable of driving a High signal and depends on the parallel
termination to generate High logic levels.
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26
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Chapter 3
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Chapter 4
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29
results, further iterations through the part selection and simulation steps could be
necessary to optimize the PDS for the specific application. A sixth optional step is also
given for cases where a perfectly optimized PDS is needed.
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is to act as local energy storage for the device. They cannot provide DC power, as only a
small amount of energy is stored in them (the voltage regulator is present to provide DC
power). The function of this local energy storage is to respond very quickly to changing
current demands. The capacitors are effective at maintaining power supply voltage at
frequencies from hundreds of kilohertz to hundreds of megahertz in the milliseconds to
nanoseconds range. Decoupling capacitors are of no use for all events occurring above or
below this range. For example, if current demand in the device increases in a few
picoseconds, the voltage at the device sags by some amount until the capacitors can supply
extra charge to the device. If current demand in the device changes and maintains this new
level for a number of milliseconds, the voltage regulator circuit, operating in parallel with
the bypass capacitors, effectively takes over for them, changing its output to supply this
new current.
Figure 4-1 shows the major components of the PDS: the power supply, the decoupling
capacitors, and the active device being powered (in this case, an FPGA).
FPGA
ug072_4_01_080104
Figure 4-1:
Figure 4-2 shows a further simplified PDS circuit, showing all reactive components
decomposed to a frequency-dependent resistor.
ltransient
ZP
+
VRIPPLE
FPGA
ug072_4_02_080104
Figure 4-2:
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31
The purpose of the PDS is to accommodate whatever current demands the device(s) could
have, and respond to changes in that demand as quickly as possible. When these demands
are not met, the voltage across the device's power supply changes. This is observed as
noise. Since inductance retards the abilities of bypass capacitors to quickly respond to
changing current demands, it should be minimized.
Figure 4-1 shows inductances between the FPGA device and capacitors, and between the
capacitors and the voltage regulator. These inductances arise as parasitics of the capacitors
themselves and of all current paths in the PCB. It is important that each of these be
minimized.
ESR
ESL
C
ug072_4_03_080104
Figure 4-3:
Figure 4-4 shows the impedance characteristic of a real capacitor. Overlaid on this plot are
the curves corresponding to the capacitors capacitance and parasitic inductance (ESL).
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These two curves combine to form the total impedance characteristic of the RLC circuit
formed by the parasitics of the capacitor.
Total Impedance Characteristic
Inductive
Contribution (ESL)
Impedance
Capacitive
Contribution (C)
Frequency
Figure 4-4:
ug072_4_04_08010
As capacitive value is increased, the capacitive curve moves down and to the left. As
parasitic inductance is decreased, the inductive curve moves down and to the right. Since
parasitic inductance for capacitors in a given package is essentially fixed, the inductance
curve remains fixed. As different capacitor values are selected in that same package, the
capacitive curve moves up and down relative to the fixed inductance curve. The only way
to decrease the total impedance of a capacitor if the package is fixed is to increase the value
of the capacitor. The only way to move the parasitic inductance curve down (and
consequently lower the total impedance characteristic), is to connect additional capacitors
in parallel.
Mounting Inductance
In this context, the mounting refers to the capacitor's solder land on the PCB, the trace (if
any) between the land and via, and the via itself.
The vias, traces, and pads of a capacitor mounting contribute anywhere from 300 pH to
4 nH of inductance depending on the specific geometry. Since the inductance of a current
path is proportional to the area of the loop the current traverses, it is important to minimize
the size of this loop. The loop consists of the path through one power plane, up through
one via, through the connecting trace to the land, through the capacitor, through the other
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33
land and connecting trace, down through the other via, and into the other plane, as shown
in Figure 4-5.
0402 Capacitor Body
Surface Trace
Via
GND
VCC
PCB
Mounted Capacitor Current Loop
ug072_4_05_080104
Figure 4-5:
By shortening the connecting traces, the area of this loop is minimized and the inductance
is reduced. Similarly, by reducing the via length through which the current flows, loop area
is minimized and inductance is reduced.
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20 mil
0402 Land Pattern, side vias, 0.6nH
0402 Land Pattern, double side vias, 0.4nH
25 mil
20 mil
20 mil
15 mil
15 mil
15 mil
30 mil
30 mil
30 mil
(A)
(B)
(C)
(D)
ug072_4_06_080104
Plane Inductance
The power and ground planes of a PCB have some amount of inductance associated with
them. The geometry of these planes determines their inductance.
Since power and ground planes are by definition a planar structure, current does not just
flow through them in one direction. It tends to spread out as it travels from one point to
another, in accordance with a property similar to skin effect. For this reason, inductance of
planes can be described as spreading inductance, and is specified in units of henries per
square. The square is dimensionless, as it is the shape of a section of plane, not the size, that
determines its inductance.
Spreading inductance acts like any other inductance to resist changes to the amount of
current in a conductor. In this case, the conductor is the power plane or planes. This
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35
quantity should be reduced as much as possible, since it retards the ability of capacitors to
respond to transient currents in the device. Since the X-Y shape of the plane is typically
something the designer has little control over, the only controllable factor is the spreading
inductance value. This is primarily determined by the thickness of the dielectric separating
a power plane from its associated ground plane.
In high-frequency power distribution systems of the type discussed here, power and
ground planes work in pairs. Their inductances do not exist independently of each other.
The spacing (and the dielectric constant of the material) between power and ground planes
determines the spreading inductance of the pair. The closer the spacing (the thinner the
dielectric), the lower the spreading inductance. Table 4-1 gives approximate values of
spreading inductance for different thicknesses of FR4 dielectric (Reference #3).
Table 4-1: Capacitance and Spreading Inductance Values for Various Thicknesses
of FR4 Power-Ground Plane Sandwiches
Dielectric Thickness
(mil, microns)
Inductance
(pH/square)
Capacitance
(pF/in2, pF/cm2)
4, 102
130
225, 35
2, 51
65
450, 70
1, 25
32
900, 140
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plane tends to carry the majority of the current complementary to that in the VCC plane.
For this reason, adjacent VCC and GND planes are considered as a pair.
Not all VCC and GND plane pairs can reside in the top half of the PCB stackup, because
manufacturing constraints typically require the PCB stackup to be symmetrical about the
center with respect to dielectric thicknesses and etched copper areas. The PCB designer
must determine which VCC and GND plane pairs have high priority or carry highfrequency energy, and which pairs have low priority or carry lower frequency energy.
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37
Example
X7R Ceramic Chip capacitor (AVX capacitor data used here)
C = 0.01 F
LSELF = 0.9 nH
FRSELF = 53 MHz
LMOUNT = 0.8 nH
To determine the effective in-system parasitic inductance (LIS), add the via parasitics:
LIS = LSELF + LMOUNT = 0.9 nH + 0.8 nH = 1.7 nH
LIS = 1.7 nH
Plugging in the values from the example:
1
F RIS = ------------------------2 L IS C
7
1
F RIS = ------------------------------------------------------------------------------------ = 3.8 10 Hz
12
8
2 ( 1.7 10
H ) ( 1 10 F )
Capacitor Anti-Resonance
One common problem associated with capacitors in an FPGA PDS is anti-resonant spikes
in the PDS aggregate impedance. These spikes can be caused by bad combinations of
energy storage devices in the PDS (such as discrete capacitors, parasitic inductances,
power and ground planes). If the inter-plane capacitance of the power and ground planes
has an especially low Z with a high-quality factor, the crossover point between the highfrequency discrete capacitors and this plane capacitance might exhibit a high-impedance
anti-resonance peak. If the FPGA has high transient current demand at this frequency
(acting as a stimulus), a large noise voltage results. The PDS can be improved only by
bringing down the impedance of the anti-resonant spike. To mitigate this problem, either
the characteristics of the high-frequency discrete capacitors or the characteristics of the
VCC and Ground planes must be changed.
Capacitor Placement
Capacitors need to be close to the device to perform the decoupling function. There are two
basic reasons for this requirement.
First, increased spacing between the device and decoupling capacitor increases the
distance travelled by the current in the power and ground planes, and hence, the
inductance of the current path between the device and the capacitor. Since the inductance
of this path (the loop followed by current as it goes from the VCC side of the capacitor to the
VCC pin[s] of the FPGA, and from the GND pin[s] of the FPGA to the GND side of the
capacitor[s]), is proportional to the loop area, decreasing its inductance is a matter of
decreasing the loop area. Shortening the distance between the device and the decoupling
capacitor(s) reduces the inductance resulting in a less impeded transient current flow.
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Because of the dimensions of PCBs, this reason tends to be less important with regard to
placement than the second reason.
The second reason deals with the phase relationship between the FPGA noise source and
the mounted capacitor. Their phase relationship determines the capacitors effectiveness.
For a capacitor to be effective in providing transient current at a certain frequency (for
instance, the optimum frequency for that capacitor), it must be within a fraction of the
wavelength associated with that frequency. The placement of the capacitor determines the
length of the transmission line interconnect (in this case, the power and ground plane pair)
between the capacitor and FPGA. The propagation delay of this interconnect is the relevant
factor.
Noise from the FPGA falls into certain frequency bands, and different sizes of decoupling
capacitors take care of different frequency bands. For this reason, capacitor placement is
determined based on the effective frequency of each capacitor.
When the FPGA initiates a change in its current demand, it causes a small local disturbance
in the voltage of the PDS (a point in the power and ground planes). For a decoupling
capacitor to counteract this, the capacitor has to first see a voltage difference. There is a
finite time delay between the start of the disturbance at the FPGA power pins and the start
of the capacitor's view of the disturbance. This time delay is equal to the distance from
FPGA power pins to capacitor, divided by the propagation speed of current through FR4
dielectric (the substrate of the PCB where the power planes are embedded). There is
another delay of the same duration for the compensation current from the capacitor to
reach the FPGA.
Therefore, for any transient current demand in the FPGA, there is a round-trip delay to the
capacitor before any relief is seen at the FPGA. For placement distances greater than one
quarter of a wavelength of some frequency, the energy transferred to the FPGA is
negligible.
For decreasing distances less than a quarter wavelength, the energy transferred to the
FPGA increases to 100% at zero distance. Efficient energy transfer from the capacitor to the
FPGA requires placement of the capacitor at a fraction of a quarter wavelength of the
FPGA power pins. This fraction should be small because the capacitor is also effective at
frequencies slightly above its resonant frequency, where the corresponding wavelength is
shorter.
In practical applications, one tenth of a quarter wavelength is a good target. This leads to
placing a capacitor within one fortieth of a wavelength of the power pins it is decoupling.
The wavelength corresponds to FRIS, the capacitor's mounted resonant frequency.
Example
0.001 F X7R Ceramic Chip capacitor, 0402 package
LIS = 1.6 nH
1
1
F RIS = ------------------- = --------------------------------------------------------------------------- = 125.8MHz
9
6
2 LC
2 1.6 10 0.001 10
Equation 4-2 calculates TRIS, the mounted period of resonance, from FRIS.
1
1
T RIS = ------------- = ---------------------------- = 7.95 ns
6
F RIS
125.8 10
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Equation 4-2
39
Equation 4-3 computes the wavelength based on TRIS and the propagation velocity in
FR4 dielectric.
T RIS
= Wavelength = -------------------V PROP
Equation 4-3
12 s
-----------inch
9
T RIS
7.95 10
= -------------------- = ----------------------------- = 47.9inches
12
V PROP
166 10
R PLACE = -----40
Equation 4-4
47.9 inches
R PLACE = ------ = -------------------------------- = 1.20 inches
40
40
In this example, the effective frequency, equal to the resonant frequency, can be determined
by Equation 1. This effective frequency is determined to be 125.8 MHz. The reciprocal of
this is taken to give the resonant period, 7.95 ns using Equation 2. Using the propagation
speed of current in FR4 (approximately 166 ps per inch), the wavelength associated with
this capacitor is computed to be approximately 48 inches using Equation 3. As computed
in Equation 4, one fortieth of this is 1.2 inches. Therefore the target placement radius
(RPLACE) for capacitors of this size is within 1.2 inches (3.0 cm) of the power and ground
pins they are decoupling.
All other capacitor sizes follow in the same manner. A radius of 1.2 inches is not terribly
difficult to achieve in current PCB technology. It does not require placing capacitors
directly underneath the device on the opposite side of the PCB. It is acceptable for
capacitors to be mounted around the periphery of the device, provided the target radius is
maintained. The 0.001 F capacitors are among the smallest in the decoupling network, so
placement radii less than an inch are unnecessary. For larger capacitors, the target
placement radius expands quickly as the resonant frequency goes down. A 4.7 F
capacitor, for example, can be placed anywhere on the board, as its target radius of
98 inches is much bigger than most PCBs (corresponding to the resonant frequency of
1.56 MHz).
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package
outline
via
silkscreen
label
plated
copper
ug072_4_07_08010
Figure 4-7: Example PCB Layout Showing Capacitor Placement on the Bottom Surface
In this example, many of the high-frequency 0402 decoupling capacitors are placed within
the footprint of the FPGA on the opposite side of the board (C150, C117). There are also a
handful of 0603 decoupling capacitors and termination resistors (C307, R274). Larger
capacitors are placed outside the footprint of the FPGA, moving farther away from the
FPGA with increasing size (C247, C288).
Traces connecting capacitor lands to vias are kept as short as possible. Also for largepackage capacitors with large separation between solder lands (C42, C224), vias are
inserted in between the solder lands to reduce parasitic inductance of the mounting.
It is not necessary to place high-frequency capacitors within the footprint of the FPGA. It is
perfectly acceptable to place all capacitors around the periphery of the device, provided all
VCC planes have a Ground plane adjacent to them, separated by a dielectric less than 4 mils
in thickness. Also, in cases where VCC and Ground plane pairs are in the top half of the
stackup (closer to the device), it is advantageous to place capacitors on the top surface of
the board, around the periphery of the device.
In cases where large numbers of external termination resistors are used, placement of the
termination resistors takes priority over the decoupling capacitors. Moving away from the
device in concentric rings, termination resistors should be closest to the device, followed
by the smallest-value decoupling capacitors, then followed by larger-value decoupling
capacitors.
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bottom three values in the network were 1.0 F, 0.1 F and 0.01 F, the network might have
two 1.0 F capacitor, four 0.1 F capacitors, and eight 0.01 F capacitors.
In addition, low-frequency capacitance in the form of tantalum, OS-CON, or electrolytic
capacitors is needed. These large capacitors typically have a higher ESR than ceramic chip
capacitors, making them effective over a wider range of frequencies. This also makes the
capacitors less likely to contribute to anti-resonance spikes. For this reason, it is not
necessary to maintain the rule of one value per decade. Generally, one value in the 470 F
to 1000 F range is sufficient.
A set of percentages is helpful for calculating these ratios based on the total number of
capacitors. Table 4-2 and Table 4-3 give these percentages for the two classes of supplies:
VCCINT, VCCAUX, VCCO, and VREF.
Table 4-2: Capacitor Value Ratios for a Balanced Decoupling Network (VCCINT,
VCCAUX, VCCO)
Capacitor Value
Quantity Percentage
Capacitor Type
470 F to 1000 F
4%
Tantalum
1.0 to 4.7 F
14%
X7R 0805
0.1 to 0.47 F
27%
X7R 0603
0.01 to 0.047 F
55%
X7R 0402
Table 4-3:
Capacitor Value
Quantity Percentage
Capacitor Type
0.1 F to 0.47 F
50%
0.01 F to 0.047 F
50%
For every power supply except VREF, these ratios should be roughly maintained. For VREF
supplies, the values should be distributed in a 50/50 ratio of 0.1 F to 0.47 F capacitors
and 0.01 F to 0.047 F capacitors. Since the primary function of VREF decoupling
capacitors is to reduce the impedance of VREF nodes thus reducing crosstalk coupling, very
little low-frequency energy is needed. Therefore, only capacitors in the 0.01 F - 0.47 F
range are necessary.
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Step 3: Simulation
During simulation, the generic decoupling network is verified and in some cases refined.
The designer can experiment with different values of capacitors or different packages to
achieve an optimum power supply impedance profile for the constraints of the system. A
number of levels of PDS design tools available from various EDA vendors are listed in
EDA Tools for PDS Design and Simulation, page 54.
The simulation circuit is essentially a parallel combination of the decoupling capacitors
with associated parasitics. The simulator calculates the aggregate impedance over the
pertinent range of frequencies. The equivalent circuit can be created and analyzed in
SPICE (see SPICE Simulation Examples, page 52 for an example SPICE deck) or in one of
the tools listed in EDA Tools for PDS Design and Simulation. A more limited but still
effective approach is to plot the impedance profile in a spreadsheet tool (for example,
Microsoft Excel).
Note that a lumped RLC simulation of this type does not reflect the distributed RLC
properties of the VCC and Ground planes of the PCB stackup. The effects of these planar
structures usually begin to manifest in the 500 MHz range, and are dependent on the
geometries of the planes (for example, length and width). These are difficult to predict
without the use of a distributed model, such as what is offered by a tool like Speed2000,
SIwave, Specctraquest Power Integrity, or a full-mesh RLC SPICE simulation. For this
reason, it is unwise to draw any conclusions from the results of a lumped RLC simulation
above 500 MHz.
In using any of these tools to simulate a bypassing network, it is important to have accurate
parasitic values. Obtaining accurate self-parasitic data from the capacitor vendor or from
in-house testing is important. The mounting parasitics lying in the path between the
bypass capacitor and the FPGA also need to be taken into account. These parasitics
combined in series give the mounted capacitor parasitic resistance and inductance. The
section on Mounting Inductance, page 33 covers the details of mounting modeling.
Calculation of Via Inductance, page 52 lists equations for via parasitic inductance. A
more accurate inductance number for a particular geometry can be obtained using a field
solver such as Ansofts HFSS. For the following simulation, a value of 0.8 nH to 0.9 nH in
mounting inductance was added to each capacitors parasitic self-inductance to come up
with LIS. This parameter reflects the inductance of small capacitor mountings in a board on
the order of 60 mils thick. Thicker board stackups have a higher associated via inductance.
Figure 4-8 shows a simple impedance plot from a simulation of the parallel combination of
these capacitors, taking into account their parasitics and the approximate parasitics of the
PCB. An equivalent SPICE netlist is included in SPICE Simulation Examples, page 52.
Table 4-4 lists the capacitor quantities, values, and parasitic values used in the simulation.
The RLC characteristics of the VCC and GND planes of the PCB are not taken into account.
44
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Impedance Z (ohms)
1.E-01
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Frequency [MHz]
ug072_4_08_080104
Figure 4-8:
Table 4-4:
Quantity
Symbol
Package
Capacitive
Values (F)
Parasitic
Inductance
(nH)
Parasitic
Resistance
(ohms)
680
2.8
0.57
0805
2.2
2.0
0.02
13
0603
0.22
1.8
0.06
26
0402
0.022
1.5
0.20
This collection of capacitors is a good start. The impedance is below 0.033 from 500 KHz
to 150 MHz, and increases to 0.11 at 500 MHz. Over this range there are no significant
anti-resonance spikes. These capacitors are used in the board design.
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46
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ug072_4_09_080104
ug072_4_10_080104
Figure 4-10:
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47
This measurement represents the peak-to-peak noise. If it is greater than or equal to the
maximum VCC ripple voltage specified in the data sheet (10% of VCC), then the bypassing
network is not adequate. The maximum voltage ripple allowed for this particular supply,
with a nominal value of 1.5V DC, is 10% of this, or 150mV. The scope shots show noise in
the range of 60 mV. From this measurement, it is clear that the decoupling network is
adequate.
If, however, the measurement showed noise greater than 10% of VCC, the PDS would be
inadequate. To have a working, robust design, changes should made to the PDS. A greater
number of capacitors, different capacitance values, or different numbers of the various
decoupling capacitor values will bring the noise down.
Having the necessary information to improve the decoupling network requires additional
measurements. Specifically, measurement of the noise power spectrum is necessary to
determine the frequencies where the noise resides. There are many ways to do this. A
spectrum analyzer works well as does an oscilloscope with FFT math functionality.
Alternatively, a long sequence of time-domain data can be captured from an oscilloscope
and converted to frequency domain using MATLAB or other software supporting FFT. It is
also possible to get a basic feel for the frequency content of the noise by simply looking at
the time-domain waveform and measuring the individual periodicities present in the
noise.
48
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ug072_4_11_080104
Figure 4-11:
The noise bands correspond to frequencies where the FPGA has a demand for current but
is not receiving it from the PDS. This could be because there is not enough capacitance, or
because there is enough capacitance but the parasitic inductance of the path separating the
capacitors from the FPGA is too great. Whatever the cause, the impedance of the power
supply at this frequency is too high. Conversely, at frequencies where there is very little or
no noise, the impedance may be lower than it needs to be. To solve these problems, the
bypassing network must be modified. New capacitor values, or different quantities of the
original values should be chosen.
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50
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The spreading inductance of the planes is controlled by the plane spacing and by the
dielectric constant of the material between them. See section on Plane Inductance, page
35.
When boards are exceptionally thick (greater than 90 mils or 2.3 mm), vias have higher
parasitic inductance. In these cases, the following changes to the design should be
considered. The first is to move the VCC/GND plane sandwiches close to the top surface
the FPGA is on. The second is to place the highest frequency capacitors on the top surface.
Both changes together reduce the parasitic inductance of the relevant current path.
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Equation 4-5
Example
To calculate the inductance of a via going from the bottom surface of the board to the top
surface of the board, use the board finished thickness for via length: the board finished
thickness at 62 mils, the via diameter at 3 mils. There are 1000 mils in an inch.
h = 0.062 in
d = 0.003 in
4 h
L = 5.08 h ln ------------- 0.75
d
4 0.062
L = 5.08 0.062 ln ------------------------- 0.75
0.003
L = 5.08 x 0.062 x 3.67
L = 1.15 nH
This result is the self-inductance of a single via. The self-inductance is only one part of the
total inductance of the current loop the via is a part of. Since the mutual inductance of vias
with opposing currents (power and ground) has its own effect on the total inductance, it
should be taken into account when greater accuracy is desired. The mutual inductance of
closely spaced complementary vias lowers the total inductance by a small amount.
52
1.
2.
Understand where the input node and output node are located.
3.
4.
5.
6.
Formulate Z = V/I.
7.
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In this approach, the AC stimulus is set to 1A. The AC Analysis directive sweeps an AC
current waveform across a prescribed set of frequency points. The number of frequency
points per decade is commented in the appended HSPICE netlist. With the AC current
magnitude set to 1A, the impedance is calculated based on Z = V/I. Thus, V is the main
calculated variable the voltage at the capacitor array positive node.
Two other details complete the SPICE decks:
1.
2.
There is a small input resistor connecting the AC source to the L-C-R network (this is
optional).
HSPICE Netlist
The HSPICE netlist is available on the Xilinx website:
http://www.xilinx.com/bvdocs/appnotes/xapp623.zip
HSPICE Output
Figure 4-12 shows the HSPICE output: ZIN(MAG) using the AWAVES graphical viewer.
ug072_4_12_080104
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Schematic Circuit
Figure 4-13 shows a capacitor array with corresponding parasitic inductance and
resistance.
ug072_4_13_080104
Figure 4-13:
Schematic Circuit
Vendor
SIwave
Ansoft
54
Cadence
Sigrity
Website URL
http://www.ansoft.com
http://www.cadence.com
http://www.sigrity.com
Star HSPICE
Synopsys
http://www.synopsys.com
UCADESR3.exe
UltraCAD
http://www.ultracad.com
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Appendix A
References
1.
2.
3.
Larry D. Smith, Decoupling Capacitor Calculations For CMOS Circuits, Proceedings EPEP
Conference, November 1984.
4.
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Appendix A: References
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