TLP621,TLP6212,TLP6214

TOSHIBA Photocoupler GaAs Ired & PhotoTransistor

TLP621,TLP621
2,TLP621
4
Programmable Controller
AC / DCInput Module
Solid State Relay

Unit in mm

The TOSHIBA TLP621, 2 and 4 consists of a phototransistor

optically coupled to a gallium arsenide infrared emitting diode.
The TLP6212 offers two isolated channels in an eight lead plastic DIP,
which the TLP6214 provides four isolated channels in a sixteen plastic
DIP.

Collectoremitter voltage: 55 V (min.)

Current transfer ratio: 50% (min.)

TOSHIBA

115B2

Weight: 0.26 g

Rank GB: 100% (min.)

Pin Configurations (top view)

TLP621-2

TLP621

TLP621-4

16

15

14

13

12

11

10

1: Anode
2: Cathode
3: Emitter
4: Collector

1, 3: Anode
2, 4: Cathode
5, 7: Emitter
6, 8: Collector

TOSHIBA

1110C4

Weight: 0.54 g

1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
10, 12, 14, 16: Collector

TOSHIBA

1120A3

Weight: 1.1 g

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TLP621,TLP6212,TLP6214
Current Transfer Ratio
Type

TLP621

TLP621-2
TLP621-4

Classification
*1

Current Transfer Ratio

(%) (IC / IF)
IF = 5mA, VCE = 5V, Ta = 25C
Min.
Max.

Marking Of
Classification

(None)

50

600

Blank, Y, Y, G, G, B, B, GB

Rank Y

50

150

Y, Y

Rank GR

100

300

G, G

Rank BL

200

600

B, B

Rank GB

100

600

G, G, B, B, GB

(None)

50

600

Blank, GR, BL, GB

Rank GB

100

600

GR, BL, GB

*1: Ex. rank GB: TLP621 (GB)

(Note) Application type name for certification test, please use standard product type name, i.e.
TLP621 (GB): TLP621
TLP621-2 (GB): TLP621-2
Made In Japan

Made In Thailand

UL recognized

E67349

*2

E152349

*2

BSI approved

6508, 7445

*3

6505, 7445

*3

SEMKO approved

9735090 / 01

*4

*2
*3
*4

UL1577
BS EN60065: 1994, BS EN60950: 1992
EN60950 (approved is TLP621 only)

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TLP621,TLP6212,TLP6214

Option (D4) type

VDE approved: DIN VDE0884 / 06.92, certificate no. 68384
Maximum operating insulation voltage: 890 VPK
Highest permissible over voltage: 8000 VPK
(Note)

When a VIDE0884 approved type is needed, please disignate the Option (D4)

Creepage distance
Clearance
Insulation thickness

7.62 mm pich
standard type
: 6.4 mm (min.)
: 6.4 mm (min.)
: 0.4 mm (min.)

10.16 mm pich
(LF2) type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)

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TLP621,TLP6212,TLP6214
Maximum Ratings (Ta = 25C)
Rating
Characteritic

Symbol

Forward current

LED

Forward current derating

TLP621-2
TLP621-4

Unit

IF

60

50

mA

IF /C

-0.7 (Ta > 39C)

-0.5 (Ta = 25C)

mA /C

Pulse forward current

IFP

1 (100s pulse, 100pps)

Power dissipation

PD

100

70

mW

PD /C

-1.0

-0.7

mW /C

Power dissipation derating

Detector

TLP621

Reverse voltage

VR

Junction temperature

Tj

125

Collector-emitter voltage

VCEO

55

Emitter-collector valtage

VECO

Collector current

IC

50

mA

Collector power dissipation

(1 circuit)

PC

150

100

mW

PC /C

-1.5

-1.0

mW /C

Collector power dissipation derating

(1 circuit, Ta 25C)
Junction temperature

Tj

125

Storage temperature range

Tstg

-55~125

Operating temperature range

Topr

-55~100

Lead soldering temperature

Tsol

260 (10 s)

Total package power dissipation

PT

250

150

mW

PT /C

-2.5

-1.5

mW /C

Total package power dissipation derating

(Ta 25C)
Isolation voltage

(Note 1)

(Note 1)

BVS

5000 (AC, 1min., R.H. 60%)

Vrms

Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.

Recommended Operating Conditions

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

VCC

24

Forward current

IF

16

20

mA

Collector current

IC

10

mA

Topr

-25

85

Operating temperature

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TLP621,TLP6212,TLP6214
Individual Electrical Characteristics (Ta = 25C)

Detector

LED

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Forward voltage

VF

IF = 10 mA

1.0

1.15

1.3

Reverse current

IR

VR = 5 V

10

Capacitance

CT

V = 0, f = 1 MHz

30

pF

Collector-emitter
breakdown voltage

V(BR) CEO

IC = 0.5 mA

55

Emitter-collector
breakdown voltage

V(BR) ECO

IE = 0.1 mA

VCE = 24 V

10

100

nA

VCE = 24 V, Ta = 85C

50

V = 0, f = 1 MHz

10

pF

MIn.

Typ.

Max.

Unit

50

600

100

600

60

30

0.4

0.2

0.4

Min.

Typ.

Max.

Unit

0.8

pF

Collector dark current

ICEO

Capacitance (collector
to emitter)

CCE

Coupled Electrical Characteristics (Ta = 25C)

Characteristic
Current transfer ratio

Saturated CTR

Symbol
IC / IF

IC / IF (sat)

Test Condition
IF = 5 mA, VCE = 5 V

IF = 1 mA, VCE = 0.4 V

Rank GB

Rank GB

IC = 2.4 mA, IF = 8 mA
Collector-emitter
saturation voltage

VCE (sat)

IC = 0.2 mA, IF = 1 mA

Rank GB

Isolation Characteristics (Ta = 25C)

Characteristic
Capacitance (input to output)
Isolation resistance

Symbol
CS
RS

Test Condition
VS = 0, f = 1 MHz
VS = 500 V
AC, 1 minute

Isolation voltage

BVS

12

110

14

10

5000

AC, 1 second, in oil

10000

DC, 1 minute, in oil

10000

Vrms
Vdc

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TLP621,TLP6212,TLP6214
Switching Characteristics (Ta = 25C)
Characterictic

Symbol

Rise time

tr

Fall time

tf

Turn-on time

ton

Test Condition

Min.

Typ.

Max.

VCC = 10 V, IC = 2 mA
RL = 100

Turn-off time

toff

Turn-on time

tON

Storage time

tS

15

Turn-off time

tOFF

25

RL = 1.9 k (Fig.1)
VCC = 5 V, IF = 16 mA

Unit

Fig. 1 Switching time test circuit

IF

RL

IF

VCC

tS

VCE

VCC
4.5V

VCE

0.5V
tON

tOFF

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TLP621,TLP6212,TLP6214

100

100

80

80

Allowable forward current

IF (mA)

Allowable forward current

IF (mA)

TLP621-2
TLP621-4

I F Ta

TLP621

60

40

20

0
-20

20

40

60

80

100

60

40

20

0
-20

120

Ambient temperature Ta (C)

120

200

100

Allowable collector power

dissipation PC (mW)

Allowable collector power

dissipation PC (mW)

240

160

120

80

40

60

80

100

120

P C Ta

80

60

40

20

0
-20

20

40

60

80

100

0
-20

120

Ambient temperature Ta (C)

3000

Pulse width 100s

IFP (mA)

500

Pulse forward current

300

100
50
30

10-3

10-2

10-1

40

60

80

100

120

IFP DR

3000

1000

20

TLP621-2
TLP621-4

Ta = 25C

10

Ambient temperature Ta (C)

IFP DR

TLP621

IFP (mA)

20

TLP621-2
TLP621-4

40

Pulse forward current

Ambient temperature Ta (C)

P C Ta

TLP621

I F Ta

Pulse width 100s

Ta = 25C

1000
500
300

100
50
30

10

100

10-3

10-2

10-1

100

Duty cycle ratio DR

Duty cycle ratio DR

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TLP621,TLP6212,TLP6214

IF VF
100

VF / Ta IF

Ta = 25C

Forward voltage temperature

coefficent VF / Ta (mV /C)

Forward current

IF (mA)

50
30

10
5
3

1
0.5
0.3
0.1
0.4

0.6

0.8

1.0

1.2

1.4

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8
-0.4
0.1

1.6

0.3

VF (V)

Forward voltage

Forward current

IFP VFP

Dark current ID (A)

IFP (mA)
Pulse forward current

Ta = 25C
100
50
30

10
5
3

1.2

0.8

1.6

2.0

Pulse forward voltage VFP

100

10-1

10-2

10-3

10-4
0

2.4

10V
5V

VCE = 24V

(V)

40

IC VCE

Collector current IC (mA)

Collector current IC (mA)

50mA
30mA
20mA
15mA
PC (MAX.)

20
IF = 5mA

50mA

25

60

10mA

160

Ambient temperature Ta (C)

Ta = 25C

40

120

80

IC VCE
80

0
0

IF (mA)

101

Pulse width 10s

500 Repetitive
300 Frequency = 100Hz

0.4

30

I D Ta

1000

1
0

10

30mA

Collector-emitter voltage VCE (V)

20mA

20

15

10mA

10

5mA

IF = 2mA

0
0

10

Ta = 25C

40mA

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Collector-emitter voltage VCE (V)

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TLP621,TLP6212,TLP6214

IC IF
Ta = 25C
VCE = 5V
VCE = 0.4V

(mA)

50

Collector current IC

IC / IF IF
500

30

Current transfer ratio IC / IF (%)

100

10
Sample A
5
3
Sample B
1
0.5
0.3

300

Sample A

100
Sample B
50
30

Ta = 25C
VCE = 5V
VCE = 0.4V

10
5
0.3

Foward current

0.1

30

10

100

IF (mA)

0.05
0.03
0.3

10

Forward current

30

VCE (sat) Ta

100
0.20

IF (mA)

IF = 5mA

Collector-emitter saturation
Voltage VCE (sat) (V)

IC = 1mA

I C Ta
100

VCE = 5V

30

10mA

5mA

10

0.12

0.08

0.04

0
0

-20
5

40

20

80

60

100

Ambient temperature Ta (C)

Switchingtime RL

1mA

1000

1
0.5

500

IF = 0.5mA

0.3

0.1
-20

20

40

60

80

Ambient temperature Ta (C)

100

Switching time (s)

Collector current IC

(mA)

25mA
50

0.16

Ta = 25C
IF = 16mA
VCC = 5V

300

tOFF
100

50

ts

30

10

5
tON

1
1

10

30

Load resistance RL

100

300

(k)

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TLP621,TLP6212,TLP6214

RESTRICTIONS ON PRODUCT USE

000707EBC

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

10

2002-09-25

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