STD20NF06

N-CHANNEL 60V - 0.032 - 24A DPAK

STripFET II POWER MOSFET
TYPE

VDSS

RDS(on)

ID

STD20NF06

60 V

< 0.040

24 A

TYPICAL RDS(on) = 0.032

EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION

3
1

DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

DPAK
TO-252
(Suffix T4)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
HIGH SWITCHING APPLICATIONS

Ordering Information
SALES TYPE
STD20NF06

MARKING
D20NF06

PACKAGE
TO-252

PACKAGING
TAPE & REEL

ABSOLUTE MAXIMUM RATINGS

Symbol
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
dv/dt (1)
EAS(2)
Tstg
Tj

Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuous) at TC = 25C
Drain Current (continuous) at TC = 100C
Drain Current (pulsed)
Total Dissipation at TC = 25C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature

() Pulse width limited by safe operating area.

June 2004

Value
60
60
20
24
17
96
60
0.4
10
300

Unit
V
V
V
A
A
A
W
W/C
V/ns
mJ

-55 to 175

(1) ISD 24A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX

(2) Starting Tj = 25 oC, ID =10 A, VDD = 45V

Rev.3.0.6

1/10

STD20NF06
TAB.1 THERMAL DATA
Rthj-case
Rthj-amb
Tl

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)

C/W
C/W
C

2.5
100
275

Max
Max

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

TAB.2 OFF
Symbol

Parameter

Test Conditions

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125C

IGSS

Gate-body Leakage
Current (VDS = 0)

VGS = 20V

V(BR)DSS

Min.

Typ.

Max.

60

Unit
V

1
10

A
A

100

nA

Max.

Unit

0.032

0.040

Typ.

Max.

Unit

TAB.3 ON (*)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS

RDS(on)

Static Drain-source On
Resistance

VGS = 10 V

ID = 250 A

Min.

Typ.

ID = 12 A

TAB.4 DYNAMIC
Symbol

2/10

Parameter

Test Conditions

gfs (*)

Forward Transconductance

VDS = 25 V

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

VDS = 25V f = 1 MHz VGS = 0

ID = 12 A

Min.

15

690
170
68

pF
pF
pF

STD20NF06
ELECTRICAL CHARACTERISTICS (continued)
TAB.5 SWITCHING ON
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)
tr

Turn-on Delay Time

Rise Time

ID = 10 A
VDD = 30 V
VGS = 10 V
RG = 4.7
(Resistive Load, Figure 3)

10
30

Qg
Qgs
Qgd

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

VDD= 30 V ID= 20 A VGS= 10 V

23
5
7.5

31

nC
nC
nC

Typ.

Max.

Unit

ns
ns

TAB.6 SWITCHING OFF

Symbol
td(off)
tf

Parameter

Test Conditions

Min.

VDD = 30 V
ID = 10 A
VGS = 10 V
RG = 4.7,
(Resistive Load, Figure 3)

Turn-off Delay Time

Fall Time

30
8

ns
ns

TAB.7 SOURCE DRAIN DIODE

Symbol

Parameter

ISD
ISDM ()

Source-drain Current
Source-drain Current (pulsed)

VSD (*)

Forward On Voltage

ISD = 24 A

Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD = 20 A
di/dt = 100A/s
Tj = 150C
VDD = 30 V
(see test circuit, Figure 5)

trr
Qrr
IRRM

(*)Pulsed: Pulse duration = 300 s, duty cycle

()Pulse width limited by safe operating area.

Safe Operating Area

Test Conditions

Min.

Typ.

VGS = 0
65
150
4.6

Max.

Unit

24
96

A
A

1.5

V
ns
nC
A

1.5 %.

Thermal Impedance

3/10

STD20NF06
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/10

STD20NF06
Normalized Gate Threshold Voltage vs Temperature

Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

Normalized Breakdown Voltage Temperature.

5/10

STD20NF06
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/10

STD20NF06

TO-252 (DPAK) MECHANICAL DATA

mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

2.2

2.4

0.086

0.094

A1

0.9

1.1

0.035

0.043

A2

0.03

0.23

0.001

0.009

0.64

0.9

0.025

0.035

B2

5.2

5.4

0.204

0.212

0.45

0.6

0.017

0.023

C2

0.48

0.6

0.019

0.023

6.2

0.236

0.244

6.4

6.6

0.252

0.260

4.4

4.6

0.173

0.181

9.35

10.1

0.368

0.397

L2

0.8

L4

0.031

0.6

0.023

0.039

A1

C2

A2

DETAIL "A"

L2

=
=

E
=

B2

DETAIL "A"

L4

0068772-B

7/10

STD20NF06

*on sales type

8/10

STD20NF06

Revision History
Date

Revision

Friday 11 June 2004

3.0.6

Description of Changes
Missing in the web

9/10

STD20NF06

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10/10

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