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VISHAY
Vishay Semiconductors
94 8691
Features
Photo detector and preamplifier in one package
Internal filter for PCM frequency
Improved shielding against electrical field
disturbance
TTL and CMOS compatibility
Output active low
Supply voltage: 2.7 V to 5.5 V
Improved immunity against ambient light
Mechanical Data
Pinning:
1 = GND, 2 = VS, 3 = OUT
Parts Table
Part
Carrier Frequency
TSOP31230
30 kHz
TSOP31233
33 kHz
TSOP31236
36 kHz
TSOP31237
36.7 kHz
TSOP31238
38 kHz
TSOP31240
40 kHz
TSOP31256
56 kHz
Block Diagram
Application Circuit
2
30 k
VS
3
Input
AGC
Band
Pass
Demodulator
OUT
1
PIN
Control Circuit
17170
Transmitter TSOPxxxx
with
TSALxxxx
Circuit
16832
R1 = 100
VS
OUT
GND
+VS
C1 =
4.7 F
C
VO
GND
GND
R1 + C1 recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below VO = 2.0 V by the external circuit.
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1
TSOP312..
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VS
- 0.3 to
+ 6.0
IS
mA
VO
- 0.3 to
(VS + 0.3)
IO
10
mA
Tj
100
Tstg
- 25 to + 85
Tamb
- 25 to + 85
Supply Voltage
(Pin 2)
Supply Current
(Pin 2)
Output Voltage
(Pin 3)
Output Current
(Pin 3)
Junction Temperature
Power Consumption
(Tamb 85 C)
Ptot
30
mW
Soldering Temperature
t 10 s, 1 mm from case
Tsd
260
Symbol
Min
Typ.
Max
Unit
Ev = 0
Test condition
ISD
0.7
1.2
1.5
mA
Ev = 40 klx, sunlight
ISH
Supply Voltage
VS
Transmission Distance
VOSL
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
1.3
2.7
mA
5.5
35
V
m
250
mV
0.35
0.5
mW/m2
Ee min
0.4
0.6
mW/m2
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
0.45
0.6
mW/m2
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min
0.5
0.7
mW/m2
Irradiance
Ee max
Directivity
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2
1/2
30
W/m2
45
deg
TSOP312..
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
t
tpi *
T
* tpi w 10/fo is recommended for optimal function
VO
16110
Output Signal
1)
2)
VOH
VOL
tpo2 )
td1 )
Ee
1.0
0.9
0.8
0.6
0.5
0.3
0.1
0.0
0.1
16909
1.0
1.2
E e min / E e Rel. Responsivity
Output Pulse
0.9
l = 950 nm,
optical test signal, fig.3
0.2
1.0
0.8
Input Burst Duration
0.7
0.6
0.5
0.4
0.3
l = 950 nm,
optical test signal, fig.1
0.2
0.1
0.0
0.1
1.0
10.0
1.0
0.8
0.6
0.4
100.0 1000.010000.0
0.9
1.1
1.3
16925
f = f0"5%
Df ( 3dB ) = f0/10
0.2
0.0
0.7
Ee Irradiance ( mW/m2 )
16908
600 ms
T = 60 ms
94 8134
VOH
VOL
Ton
Toff
600 ms
VO
Toff
0.4
Ee
Ton
0.7
t
16911
4.0
3.5
3.0
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01
0.10
1.00
10.00
100.00
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3
TSOP312..
VISHAY
2.0
f = fo
1.5
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
0.4
0.3
0.2
0.1
0.0
30 15
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
94 8147
30
45
60
75
90
1.2
1.0
0.8
0.6
0.4
0.2
0
750
2.0
1.6
15
f(E) = f0
1.6
16918
2.0
0.5
1000.0
16912
0.6
Vishay Semiconductors
850
950
1050
1150
l Wavelength ( nm )
94 8408
0.8
10
20
30
0.7
0.6
40
0.5
1.0
0.4
0.9
50
0.8
60
0.3
0.2
f = 38 kHz, Ee = 2 mW/m2
70
0.7
0.1
80
0.0
0
16913
20
40
60
80
100
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4
0.6
120
95 11340p2
0.4 0.2
0
0.2
0.4 0.6
d rel - Relative Transmission Distance
TSOP312..
VISHAY
Vishay Semiconductors
10
20
30
40
1.0
0.9
50
0.8
60
70
0.7
80
95 11339p2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VS Supply Voltage ( V )
17185
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5
TSOP312..
VISHAY
Vishay Semiconductors
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6
10
15
20
Time ( ms )
16920
IR Signal
IR Signal
0
16921
10
Time ( ms )
15
20
TSOP312..
VISHAY
Vishay Semiconductors
Package Dimensions in mm
96 12116
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7
TSOP312..
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
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8