DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2485
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
PACKAGE DIMENSIONS

The 2SK2485 is N-Channel MOS Field Effect Transistor designed

(in millimeter)

for high voltage switching applications.

20.00.2
6.0

RDS (on) = 2.8 (VGS = 10 V, ID = 3.0 A)

Low Ciss Ciss = 1 200 pF TYP.

High Avalanche Capability Ratings

Drain to Source Voltage

VDSS

900

Gate to Source Voltage

VGSS

30

ID (DC)

6.0

2.20.2

Drain Current (DC)

ID (pulse)

12

5.45

Drain Current (pulse)*

Total Power Dissipation (Tc = 25 C)

PT1

100

Total Power Dissipation (TA = 25 C)

PT2

3.0

Channel Temperature

Tch

150

Storage Temperature

Tstg

Single Avalanche Current**

IAS

6.0

Single Avalanche Energy**

EAS

42.3

mJ

19 MIN.
3.00.2

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

1.00.2
5.45

0.60.1

2.80.1

1. Gate
2. Drain
3. Source
4. Fin (Drain)

MP-88

55 to +150 C

Drain

PW 10 s, Duty Cycle 1 %

** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0

4.7 MAX.
1.5

3.20.2

7.0

Low On-Resistance

15.7 MAX.

4.50.2

1.0

FEATURES

Body
Diode
Gate

Source

Document No. D10279EJ1V0DS00 (1st edition)

Date Published August 1995 P
Printed in Japan

1995

2SK2485
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC

SYMBOL

MIN.

Drain to Source On-Resistance

RDS (on)

Gate to Source Cutoff Voltage

VGS (off)

2.5

Forward Transfer Admittance

| yfs |

2.0

TYP.
2.2

MAX.

UNIT

2.8

TEST CONDITIONS
VGS = 10 V, ID = 3.0 A

3.5

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 3.0 A
VDS = VDSS, VGS = 0

Drain Leakage Current

IDSS

100

Gate to Source Leakage Current

IGSS

100

nA

VGS = 30 V, VDS = 0

Input Capacitance

Ciss

1200

pF

VDS = 10 V

Output Capacitance

Coss

170

pF

VGS = 0

Reverse Transfer Capacitance

Crss

30

pF

f = 1 MHz

Turn-On Delay Time

td (on)

20

ns

ID = 3.0 A

Rise Time

tr

10

ns

VGS = 10 V

Turn-Off Delay Time

td (off)

70

ns

VDD = 150 V

Fall Time

tf

15

ns

RG = 10 RL = 50

Total Gate Charge

QG

40

nC

ID = 6.0 A

Gate to Source Charge

QGS

nC

VDD = 450 V

Gate to Drain Charge

QGD

17

nC

VGS = 10 V

Body Diode Forward Voltage

VF (S-D)

1.0

Reverse Recovery Time

trr

740

ns

IF = 6.0 A, VGS = 0

Reverse Recovery Charge

Qrr

4.0

di/dt = 50 A/s

Test Circuit 1 Avalanche Capability

D.U.T.
RG = 25
PG
VGS = 20 - 0 V

IF = 6.0 A, VGS = 0

Test Circuit 2 Switching Time

D.U.T.

50

VGS

RL
RG
RG = 10

PG.

VDD

VGS
Wave Form

VGS (on)

10 %

90 %

VDD
ID

90 %
90 %

BVDSS
IAS
ID

ID

VGS
0
VDS

D
Wave Form

VDD

10 %

10 %

td (on)

tr
ton

Starting Tch

td (off)

tf
toff

t = 1 us
Duty Cycle 1 %

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA
PG.

50

RL
VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2SK2485
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE
PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

140
100
80
60
40
20

20

40

60

80

120
100
80
60
40
20
0

100 120 140 160

20

40

60

80

100 120 140 160

TC - Case Temperature - C

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

100

10

ID(pulse)
10

10

ed

Lim

Po

S(

RD

er

Di

10

ss

ipa

8
VGS = 20 V
10 V
8V
6V

Lim

ite

TC = 25 C
Single Pulse
1

tio

0.1

it

n)

ID - Drain Current - A

ID - Drain Current - A

Pulsed

PW

10

100

1 000

VDS - Drain to Source Voltage - V

12

16

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

ID - Drain Current - A

100

10

Pulsed
TA = 25 C
25 C
75 C
125 C

1.0

0.1

10

15

VGS - Gate to Source Voltage - V

2SK2485
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t) - Transient Thermal Resistance - C/W

1 000

100

Rth(ch-a) = 41.7(C/W)

10
Rth(ch-c) = 1.25(C/W)
1

0.1

0.01
0.001
10

Single Pulse
Tc = 25 C
100

1m

10 m

100 m

10

100

1 000

100

VDS = 20 V
Pulsed

10

TA = 25 C
25 C
75 C
125 C

1.0

0.1
0.01

0.1

1.0

Pulsed
6

ID = 6 A
3A
1.5 A

12

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.

CHANNEL TEMPERATURE

Pulsed
VGS = 10 V
6

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

ID - Drain Current - A

0.1

1.0
ID - Drain Current - A

10

10

VGS(off) - Gate to Source Cutoff Voltage - V

RDS(on) - Drain to Source On-State Resistance -

| yfs | - Forward Transfer Admittance - S

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

RDS(on) - Drain to Source On-State Resistance -

PW - Pulse Width - s

VDS = 10 V
ID = 1 mA

2
50

50

100

150

Tch - Channel Temperature - C

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE
5

Pulsed
100

ISD - Diode Forward Current - A

RDS(on) - Drain to Source On-State Resistance -

2SK2485

1
50

50

100

10

1
VGS = 10 V
VGS = 0 V
0.1

VGS = 10 V
ID = 3 A
150

Tch - Channel Temperature - C

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

SWITCHING CHARACTERISTICS
1 000

VGS = 0
f = 1 MHz

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

10 000

Ciss
1 000

Coss

100

Crss
10
0.1

10

100

tr
tf

100

td(off)
td(on)
10

1.0
0.1

ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT
16
VGS - Gate to Source Voltage - V

trr - Reverse Recovery time - ns

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

di/dt = 50 A/s
VGS = 0

1 000

100

1.0
0.1

1.0

10

ID - Drain Current - A

VDD = 150 V
VGS = 10 V
RG = 10
10
100

1.0

VDS - Drain to Source Voltage - V

10 000

1.5

1.0

0.5

100

ID = 6 A
14
12
VDD = 450 V
300 V
150 V

10
8
6
4
2
0

10

20

30

40

Qg - Gate Charge - nC

2SK2485
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR

10

16

IAS = 6.0 A

EAS

=4

2.3

mJ

1.0
VDD = 150 V
VGS = 20 V 0
0.1 RG = 25
100
1m

VDD = 150 V
RG = 25
VGS = 20 V 0
IAS 6.0A

14
12
10
8
6
4
2

10 m

L - Inductive Load - H

Energy Derating Factor - %

IAS - Single Avalanche Current - A

100

100 m

0
25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

2SK2485
REFERENCE
Document Name

Document No.

NEC semiconductor device reliability/quality control system.

TEI-1202

Quality grade on NEC semiconductor devices.

IEI-1209

Semiconductor device mounting technology manual.

IEI-1207

Semiconductor device package manual.

IEI-1213

Guide to quality assurance for semiconductor devices.

MEI-1202

Semiconductor selection guide.

MF-1134

Power MOS FET features and application switching power supply.

TEA-1034

Application circuits using Power MOS FET.

TEA-1035

Safe operating area of Power MOS FET.

TEA-1037

2SK2485
[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on
a customer designated quality assurance program for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11

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