STD2NC60

N-CHANNEL 600V - 3.3 - 2A DPAK / IPAK

PowerMeshII MOSFET

TYPE

VDSS

RDS(on)

ID

STD2NC60

600V

< 3.6

2A

TYPICAL RDS(on) = 3.3

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED

2
1

1
DPAK

DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.

IPAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol
VDS
VDGR
VGS

Parameter

Value

Unit

Drain-source Voltage (VGS = 0)

600

Drain-gate Voltage (RGS = 20 k)

600

Gate- source Voltage

30

ID

Drain Current (continuos) at TC = 25C

ID

Drain Current (continuos) at TC = 100C

1.3

IDM ()
PTOT

Drain Current (pulsed)

Total Dissipation at TC = 25C

60

0.48

W/C

Derating Factor
dv/dt(1)
Tstg
Tj

Peak Diode Recovery voltage slope

Storage Temperature
Max. Operating Junction Temperature

V/ns

65 to 150

150

()Pulse width limited by safe operating area

(1)ISD 2A, di/dt 100A/s, VDD V (BR)DSS, T j T JMAX.

January 2001

1/9

STD2NC60
THERMAL DATA
Rthj-case

Thermal Resistance Junction-case Max

Rthj-amb
Tl

C/W

Thermal Resistance Junction-ambient Max

100

C/W

Maximum Lead Temperature For Soldering Purpose

275

AVALANCHE CHARACTERISTICS
Symbol

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

Parameter

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)

80

mJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol

Parameter

Test Conditions

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

IGSS

Gate-body Leakage
Current (VDS = 0)

VGS = 30V

V(BR)DSS

Min.

Typ.

Max.

600

Unit
V

VDS = Max Rating, TC = 125 C

50

100

nA

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

RDS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 1.5 A

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS = 10V

Min.

Typ.

Max.

Unit

3.3

3.6

DYNAMIC
Symbol
gfs (1)

2/9

Parameter
Forward Transconductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer
Capacitance

Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.5A
VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

Max.

Unit

1.2

400

pF

57

pF

pF

STD2NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr

Parameter
Turn-on Delay Time
Rise Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Test Conditions

Min.

Typ.

Max.

Unit

VDD = 300V, ID = 1.5A

RG = 4.7 VGS = 10V
(see test circuit, Figure 3)

13

ns

ns

VDD = 480V, ID = 3A,

VGS = 10V

15

22

nC

6.2

nC

5.6

nC

SWITCHING OFF
Symbol
tr(Voff)

Parameter
Off-voltage Rise Time

tf

Fall Time

tc

Cross-over Time

Test Conditions

Min.

VDD = 480V, ID = 3A,

RG = 4.7, VGS = 10V
(see test circuit, Figure 5)

Typ.

Max.

11

Unit
ns

13

ns

18

ns

SOURCE DRAIN DIODE

Symbol
ISD

Parameter

Test Conditions

Min.

Typ.

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 3A, VGS = 0

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD = 3A, di/dt = 100A/s,

VDD = 100V, Tj = 150C
(see test circuit, Figure 5)

IRRM

Reverse Recovery Current

Max.

Unit

1.6

500

ns

2.1

8.5

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedance

3/9

STD2NC60
Output Characteristics

Tranfer Characteristics

Tranconductance

Static Drain-Source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/9

STD2NC60
Normalized Gate Thereshold Voltage vs Temp.

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STD2NC60
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/9

STD2NC60

TO-251 (IPAK) MECHANICAL DATA

mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

2.4

0.086

MAX.
0.094
0.043

2.2

A1

0.9

1.1

0.035

A3

0.7

1.3

0.027

0.051

0.64

0.9

0.025

0.031

B2

5.2

5.4

0.204

0.212

B3

0.85

B5

0.033

0.3

0.012

B6

0.95

0.037

0.45

0.6

0.017

0.023

C2

0.48

0.6

0.019

0.023

6.2

0.236

0.244

6.4

6.6

0.252

0.260

4.4

4.6

0.173

0.181

15.9

16.3

0.626

0.641

9.4

0.354

0.370

L1

0.8

1.2

0.031

L2

0.8

0.047

0.031

0.039

A1

C2

A3

B3

=
=

B2

B5

B6

L2

L1

0068771-E

7/9

STD2NC60

TO-252 (DPAK) MECHANICAL DATA

mm

DIM.
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

2.20

2.40

0.087

0.094

A1

0.90

1.10

0.035

0.043

A2

0.03

0.23

0.001

0.009

0.64

0.90

0.025

0.035

B2

5.20

5.40

0.204

0.213

0.45

0.60

0.018

0.024

C2

0.48

0.60

0.019

0.024

6.00

6.20

0.236

0.244

6.40

6.60

0.252

0.260

4.40

4.60

0.173

0.181

9.35

10.10

0.368

0.398

L2
L4
V2

0.8
0.60
0

0.031
1.00
8

0.024
0

0.039
0o

P032P_B

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STD2NC60

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