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The mobility of N type charge current carriers (negative electrons) in silicon (Si) is more than two
times greater than the mobility of P type charge carriers (positive holes) in Si. Resulting in faster
transistor operating speed.
The mass processing of Si based BJTs and integrated circuits (ICs) are most economically
manufactured using large N type silicon wafers.
mre from this link:
http://www.madsci.org/posts/archives/2003-05/1051807147.Ph.r.html
Murali