Escolar Documentos
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Session 4
Microgrid modeling
Luis Ismael Minchala Avila
Universidad de Cuenca
Departamento de Elctrica, Electrnica y Telecomunicaciones
ismael.minchala@ucuenca.edu.ec
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Agenda
1
Introduction
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Introduction
Introduction
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Introduction
DG units modeling
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Introduction
DG units modeling
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3
V
cos (f )
ll(peak)
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(1)
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O u t p u t vo l t a g e o f t h e r ect i fi er
250
=
=
=
=
0
30
60
85
250
200
200
150
150
100
100
50
50
0
0
0.2
0.4
0.6
0.8
T i me ( s )
Ismael Minchala A. (UCuenca)
20
40
60
80
( de g r e e s )
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There are mainly three types of dc/dc converters: buck, boost and
buck-boost.
Buck mode converters are used in applications where a reduced dc
voltage than the one fed into the input is needed.
Boost mode converters are able to increase the output voltage.
Buck-boost mode converters are able to increase or decrease the
output voltage with the particularity of presenting opposite polarity of
the main source.
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= iL iC
Z
1
diL (t)
vC (t) =
iC dt;
L
= uVin vC (t)
C
dt
dvC (t)
1
=
vC (t) + iL (t)
dt
RC
diL (t)
1
1
= vC (t) + uVin
dt
L
L
"
#
dvC (t)
1
0
RC
1
vC (t)
dt
=
+ 1
Vin
diL (t)
iL (t)
L1 0
Lu
iR
(2)
(3)
(4)
(5)
dt
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"
iR
vC (t)
R
dvC (t)
dt
diL (t)
dt #
dvC (t)
dt
diL (t)
dt
= iL iC
(6)
= (1 u) iL (t) C
dvC (t)
dt
1
1
vC (t) + (1 u) iL (t)
(7)
RC
C
1u
1
=
vC (t) + Vin
(8)
L
L
1
1
0
(1 u)
vC (t)
RC
C
=
+ 1 Vin (9)
iL (t)
L1 (1 u)
0
L
=
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dvC (t)
1
1
=
vC (t) + (1 u) iL (t)
(10)
dt
RC
C
diL (t)
1u
1
=
vC (t) + uVin
(11)
dt #
L
L
"
dvC (t)
1
1
0
RC
(1 u)
vC (t)
dt
C
=
+ 1
Vin
(12)
diL (t)
iL (t)
L1 (1 u)
0
Lu
dt
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2
3
2
(13)
the ratio between the amplitudes of the carrier signal and the control signal
is called modulation index,
m=
V1 =
Ismael Minchala A. (UCuenca)
Vm
Vc
(14)
mVdc
2 2
(15)
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2
3
2
(13)
the ratio between the amplitudes of the carrier signal and the control signal
is called modulation index,
m=
V1 =
Ismael Minchala A. (UCuenca)
Vm
Vc
(14)
mVdc
2 2
(15)
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1
2
Phase voltage
Phase current
200
200
150
150
100
100
50
50
V, A
V, A
Phase voltage
Phase current
50
50
100
100
150
150
200
200
250
0.2
0.21
0.22
0.23
0.24
0.25
250
0.2
Time (s)
(a)
Ismael Minchala A. (UCuenca)
0.21
0.22
0.23
0.24
0.25
Time (s)
(b)
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vd
vq
v
vAB
vBC
vCA
=
=
vd + jvq
"
1
1
2
vA
vB
vC
(17)
Vdc
1
1
0
a
0
b
1
c
1
(18)
2
Vdc
1
3
1
1
2
1
1
a
1 b
2
c
(19)
1
0
1
vAN
vBN
vCN
3
2
(16)
21
23
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dx
dt
x
= Ax + BvF
id
= iq
iF
(Rs + RL )
Ls
0
Ls
(Rs + RL ) Lm
=
0
0
RF
L s 0 Lm
0 Ls 0
=
Lm 0 LF
0
0
=
1
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(20)
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(21)
x 2 (t) = Kb x1 (t ) x2 (t)
Ka
1
0
0
Ta
0
_
x(t) =
x(t ) + Ta u(t)
x(t) +
(22)
Kb 0
0
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Fr equ en cy r es p o n s e ( p u )
1.02
1
1.015
1.01
0.8
1.005
0.6
1
0.995
0.4
0.99
0.2
0.985
0.98
0
0.002
0.004
0.006
0.008
0.01
T i me ( s )
Ismael Minchala A. (UCuenca)
T i me ( s )
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+ 0.08 3 + 1
(23)
ARCp Vw2
2
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(24)
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Powe r c oe ffic ie nt
0.6
=
=
=
=
0
10
15
20
Vw
Vw
Vw
Vw
0.9
=
=
=
=
6
8
12
14
0.8
0.4
0.7
0.6
pu
0.2
0.5
0
0.4
0.3
0.2
0.2
0.1
0.4
10
12
0.5
1.5
( a)
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p
ds +
qs
b
b
qs +
ds
b
b
r
p 0
0
+
dr
+
b
b qr
vqs
= rs iqs +
(25)
vds
= rs ids
(26)
0
vqr
0
= rr0 iqr
0
vdr
p
r
b
Te
Ismael Minchala A. (UCuenca)
0
rr0 idr
+
r
b
0
qr
+
(27)
p 0
b dr
(28)
1
(Te T0 )
2H
0 0
0 0
= qr
idr dr
iqr
(29)
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(30)
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R o t o r s p eed ( p u )
R o t o r cu r r en t ( p u )
10
10
1
0.9
0.8
0.7
0.6
0.5
2
0.3
0.2
0.1
10
0.4
10
0
T i me ( s )
Ismael Minchala A. (UCuenca)
0
0
T i me ( s )
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PV model
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PV model
Applying Kirchhoffs first law and a non-linear current relation of the diode
shown in Figure, iD , it is possible to find the mathematical relationship of
the PV current,
i(t) = iph iD
V +iRs
V + iRs
V + iRs
= iph Is e q AkT 1
Rsh
Rsh
(31)
S
iph,ref + CT (T Tref )
Sref
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(32)
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PV model
W
where S is the solar radiation m
2 ; Sref , Tref , iph,ref are the solar
radiation, cell absolute temperature and photocurrent
in standard test
conditions; CT is a temperature coefficient oAK .
Diode saturation current varies with cell temperature as follows:
Is = Is,ref
g
T 3 qE
e Ak
Tref
1
Tref
T1
(33)
where Is,ref , is the diode saturation current in standard test conditions and
Eg represents the band-gap energy of the cell semiconductor (eV ).
q
V
s
Np V
iRs
+ iR
AkT Ns
Np
1
+
i(t) = Np iph Np Is e
Rsh Ns
Np
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(34)
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PV model
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Z
1
V0 = Rd i(t) +
[i(t) + iB (t)] dt
C
Z
1
[i(t) + iB (t)] dt
Vp (t) =
C
dVp (t)
1
1
V0 = R d C
+ iB (t) +
V0
dt
C
Rd C
dVp (t)
1
1
1
=
Vp (t) iB (t) +
V0
dt
Rd C
C
Rd C
VB (t) = Vp (t) RB iB (t)
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(35)
(36)
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State of charge
2.2
100
Battery Voltage
Capacitor Voltage
2.1
95
1.9
1.8
90
1.7
1.6
0.1
0.2
0.3
iB(t) (A)
0.4
0.5
85
(a)
Ismael Minchala A. (UCuenca)
0.1
0.2
0.3
iB(t) (A)
0.4
0.5
(b)
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Benchmark model
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Benchmark model
3
x 10
0.04
Real
Reactive
0.15
3
x 10
1.5
1.5
x 10
x 10
2.5
0.03
3
2
pu
0.1
0.02
0.05
1.5
0.5
0.5
0.01
1
0.5
0
0
10
20
10
20
4
x 10
3
x 10
10
20
1.5
10
20
10
20
10
20
10
20
10
20
x 10
x 10
1.5
0.5
0
0
10
20
0
0
10
20
0
0
10
20
x 10
3
0.03
0.15
0
0
4
x 10
2.5
0
0
0.5
0
0
20
2.5
1.5
10
3
x 10
3
5
0.5
3
x 10
3
2.5
pu
10
20
x 10
1.5
x 10
1.5
0.025
1.5
pu
0.02
0.1
1.5
0.015
0.01
0.5
0.5
0.05
0.5
0.5
0.005
0
0
10
20
Time (h)
0
0
10
Time (h)
20
0
0
10
Time (h)
20
0
0
10
Time (h)
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20
0
0
10
Time (h)
20
Time (h)
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Benchmark model
Vo l t a g e a mp l i t u d e a t No d e- 1 ( p u )
Vo l t a g e a mp l i t u d e a t No d e- 9
1.04
1.02
1.02
1
1
0.98
0.98
0.96
0.96
0.94
0.94
0.92
0.92
0.9
0.9
0.88
0.88
0.86
0.86
0
10
15
20
T i me ( h )
Ismael Minchala A. (UCuenca)
10
15
20
T i me ( h )
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Benchmark model
D E G ge n e r at e d p owe r ( p u )
0.35
0.2
W T G p owe r ( p u )
P V1 p owe r ( p u )
0.02
0.19
0.018
0.18
0.016
0.17
0.014
0.16
0.012
0.15
0.01
0.14
0.008
0.13
0.006
0.12
0.004
0.11
0.002
0.3
0.25
0.2
0.15
0.1
0.05
0
0
8 12 16 20 24
T i me ( h )
8 12 16 20 24
T i me ( h )
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0
0
8 12 16 20 24
T i me ( h )
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Summary
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Appendix
Questions
Preguntas
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