NGD18N40CLBT4

Ignition IGBT
18 Amps, 400 Volts
NChannel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features

Ideal for CoilonPlug Applications

DPAK Package Offers Smaller Footprint for Increased Board Space
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and GateEmitter Resistor (RGE)
Emitter Ballasting for ShortCircuit Capability
PbFree Package is Available

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18 AMPS
400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C

RG

RGE

E
4
1 2
3

MARKING DIAGRAM
1
Gate

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCES

430

VDC

CollectorGate Voltage

VCER

430

VDC

GateEmitter Voltage

VGE

18

VDC

IC

15
50

ADC
AAC

Collector CurrentContinuous
@ TC = 25C Pulsed
ESD (Human Body Model)
R = 1500 , C = 100 pF

ESD

ESD (Machine Model) R = 0 , C = 200 pF

ESD

800

PD

115
0.77

Watts
W/C

TJ, Tstg

55 to
+175

Total Power Dissipation @ TC = 25C

Derate above 25C
Operating and Storage Temperature Range

kV
8.0

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

Semiconductor Components Industries, LLC, 2006

January, 2006 Rev. 6

DPAK
CASE 369C
STYLE 7

2
Collector

YWW
G18
N40BG

4
Collector

3
Emitter
G18N40B
Y
WW
G

= Device Code
= Year
= Work Week
= PbFree Device

ORDERING INFORMATION
Device

Package

Shipping

NGD18N40CLBT4

DPAK

2500/Tape & Reel

NGD18N40CLBT4G

DPAK
2500/Tape & Reel
(PbFree)

For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Publication Order Number:

NGD18N40CLB/D

NGD18N40CLBT4
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55 TJ 175C)
Characteristic

Symbol

Single Pulse CollectortoEmitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25C
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.2 A, L = 3.0 mH, Starting TJ = 25C
VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125C

EAS

Reverse Avalanche Energy

VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C

EAS(R)

Value

Unit
mJ

400
400
300
mJ
2000

MAXIMUM SHORTCIRCUIT TIMES (55C TJ 150C)

Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)

tsc1

750

ms

Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)

tsc2

5.0

ms

RJC

1.3

C/W

RJA

95

C/W

TL

275

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

DPAK (Note 1)

Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

IC = 2.0 mA

TJ = 40C to
150C

380

395

420

VDC

IC = 10 mA

TJ = 40C to
150C

390

405

430

TJ = 25C

2.0

20

TJ = 150C

10

40*

TJ = 40C

1.0

10

TJ = 25C

2.0

TJ = 25C

0.7

1.0

TJ = 150C

12

25*

TJ = 40C

0.1

1.0

TJ = 25C

27

33

37

TJ = 150C

30

36

40

TJ = 40C

25

32

35

IG = 5.0 mA

TJ = 40C to
150C

11

13

15

VDC

VGE = 10 V

TJ = 40C to
150C

384

640

700

ADC

OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage

Zero Gate Voltage Collector Current

BVCES

ICES
VCE = 350 V,
VGE = 0 V
VCE = 15 V,
VGE = 0 V

Reverse CollectorEmitter Leakage Current

IECS
VCE = 24 V

Reverse CollectorEmitter Clamp Voltage

BVCES(R)
IC = 75 mA

GateEmitter Clamp Voltage

GateEmitter Leakage Current

BVGES
IGES

ADC

mA

VDC

Gate Resistor

RG

TJ = 40C to
150C

70

Gate Emitter Resistor

RGE

TJ = 40C to
150C

10

16

26

1. When surface mounted to an FR4 board using the minimum recommended pad size.
*Maximum Value of Characteristic across Temperature Range.

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2

NGD18N40CLBT4
ELECTRICAL CHARACTERISTICS (continued)
Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

TJ = 25C

1.1

1.4

1.9

VDC

TJ = 150C

0.75

1.0

1.4

TJ = 40C

1.2

1.6

2.1*

3.4

mV/C

TJ = 25C

1.0

1.4

1.6

VDC

TJ = 150C

0.9

1.3

1.6

TJ = 40C

1.1

1.45

1.7*

TJ = 25C

1.3

1.6

1.9*

TJ = 150C

1.2

1.55

1.8

TJ = 40C

1.4

1.6

1.9*

TJ = 25C

1.4

1.8

2.05

TJ = 150C

1.4

1.8

2.0

TJ = 40C

1.4

1.8

2.1*

TJ = 25C

1.8

2.2

2.5

TJ = 150C

2.0

2.4

2.6*

TJ = 40C

1.7

2.1

2.5

TJ = 25C

1.3

1.8

2.0*

TJ = 150C

1.3

1.75

2.0*

TJ = 40C

1.4

1.8

2.0*

IC = 6.5 A,
VGE = 3.7 V

TJ = 25C

1.65

VCE = 5.0 V, IC = 6.0 A

TJ = 40C to
150C

8.0

14

25

Mhos

400

800

1000

pF

VCC = 25 V, VGE = 0 V
f = 1.0 MHz

TJ = 40C to
150C

ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage

VGE(th)
IC = 1.0 mA,
VGE = VCE

Threshold Temperature Coefficient

(Negative)
CollectortoEmitter OnVoltage

VCE(on)
IC = 6.0 A,
VGE = 4.0 V

IC = 8.0 A,
VGE = 4.0 V

IC = 10 A,
VGE = 4.0 V

IC = 15 A,
VGE = 4.0 V

IC = 10 A,
VGE = 4.5 V

Forward Transconductance

gfs

DYNAMIC CHARACTERISTICS
Input Capacitance

CISS

Output Capacitance

COSS

Transfer Capacitance

CRSS

50

75

100

4.0

7.0

10

SWITCHING CHARACTERISTICS
TurnOff Delay Time (Resistive)

td(off)

VCC = 300 V, IC = 6.5 A

RG = 1.0 k, RL = 46 ,

TJ = 25C

4.0

10

Fall Time (Resistive)

tf

VCC = 300 V, IC = 6.5 A

RG = 1.0 k, RL = 46 ,

TJ = 25C

9.0

15

TurnOn Delay Time

td(on)

VCC = 10 V, IC = 6.5 A
RG = 1.0 k, RL = 1.5

TJ = 25C

0.7

4.0

tr

VCC = 10 V, IC = 6.5 A
RG = 1.0 k, RL = 1.5

TJ = 25C

4.5

7.0

Rise Time

2. Pulse Test: Pulse Width v 300 S, Duty Cycle v 2%.

*Maximum Value of Characteristic across Temperature Range.

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3

Sec

Sec

NGD18N40CLBT4
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

60
VGE = 10 V
50

5V
4.5 V

40
30

4V

TJ = 25C

3.5 V
20
3V
10

2.5 V

0
2

4.5 V
40
4V

TJ = 40C
30

3.5 V
20
3V
10
2.5 V
0

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics

Figure 2. Output Characteristics

60
IC, COLLECTOR CURRENT (AMPS)

60
VGE = 10 V
50
5V
40
TJ = 150C

4.5 V

30
4V
20

3.5 V
3V

10

2.5 V

0
0

55

VCE = 10 V

50
45
40
35
30

TJ = 25C

25
20
15
10
5
0
0

COLLECTOR TO EMITTER VOLTAGE (VOLTS)

VGE = 5 V
IC = 25 A
IC = 20 A

2.5

IC = 15 A
2.0
IC = 10 A
1.5

IC = 5 A

1.0
0.5
0.0
50

25

25

50

75

100

Figure 4. Transfer Characteristics

4.0

3.0

VGE, GATE TO EMITTER VOLTAGE (VOLTS)

Figure 3. Output Characteristics

3.5

TJ = 150C

TJ = 40C

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

5V

50

0
1

IC, COLLECTOR CURRENT (AMPS)

VGE = 10 V

125

150

3
TJ = 25C
2.5
IC = 15 A
2

IC = 10 A

1.5

IC = 5 A

1
0.5
0
3

TJ, JUNCTION TEMPERATURE (C)

GATETOEMITTER VOLTAGE (VOLTS)

Figure 5. CollectortoEmitter Saturation

Voltage versus Junction Temperature

Figure 6. CollectortoEmitter Voltage versus

GatetoEmitter Voltage

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4

10

10000

3
TJ = 150C

IC = 15 A

C, CAPACITANCE (pF)

2.5

IC = 10 A

1.5
IC = 5 A
1

1000

Ciss

100

Coss

10

Crss

0.5

10

40

60

80

100 120

140 160 180 200

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

Figure 7. CollectortoEmitter Voltage versus

GatetoEmitter Voltage

Figure 8. Capacitance Variation

30

2
1.8

VTH + 4

VTH

1.6
1.4

20

GATE TO EMITTER VOLTAGE (VOLTS)

VTH 4

1.2
1
0.8
0.6
0.4

VCC = 50 V
VGE = 5.0 V
RG = 1000

25
L = 1.8 mH

20
15

L = 3 mH

10

L = 6 mH

0.2
0
50 30 10

10

30

50

70

90

0
50 25

110 130 150

25

50

75

100

125

150 175

TEMPERATURE (C)

TEMPERATURE (C)

Figure 9. Gate Threshold Voltage versus

Temperature

Figure 10. Minimum Open Secondary Latch

Current versus Temperature
12

30
VCC = 50 V
VGE = 5.0 V
RG = 1000

25
L = 1.8 mH
20

10
SWITCHING TIME (s)

IL, LATCH CURRENT (AMPS)

1
0

IL, LATCH CURRENT (AMPS)

GATE THRESHOLD VOLTAGE (VOLTS)

COLLECTOR TO EMITTER VOLTAGE (VOLTS)

NGD18N40CLBT4

L = 3 mH

15

L = 6 mH

10

VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300 H

tf

6
td(off)
4
2

5
0
50 25

25

50

75

100

125

150

0
50 30 10

175

10

30

50

70

90

110 130 150

TEMPERATURE (C)

TEMPERATURE (C)

Figure 11. Typical Open Secondary Latch

Current versus Temperature

Figure 12. Inductive Switching Fall Time

versus Temperature

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5

NGD18N40CLBT4
100
COLLECTOR CURRENT (AMPS)

COLLECTOR CURRENT (AMPS)

100
DC
10
100 s
1 ms

10 ms
100 ms
0.1

0.01

100 s

0.1

100 ms

1 ms
10 ms

0.01
1

10

100

1000

10

100

1000

COLLECTOREMITTER VOLTAGE (VOLTS)

COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 13. Single Pulse Safe Operating Area

(Mounted on an Infinite Heatsink at TA = 255C)

Figure 14. Single Pulse Safe Operating Area

(Mounted on an Infinite Heatsink at TA = 1255C)

100
COLLECTOR CURRENT (AMPS)

100
COLLECTOR CURRENT (AMPS)

10 DC

t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10

10

t1 = 3 ms, D = 0.30
1

0.1

0.01

t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10

10

t1 = 3 ms, D = 0.30
1

0.1

0.01
1

10

100

1000

10

100

1000

COLLECTOREMITTER VOLTAGE (VOLTS)

COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 15. Pulse Train Safe Operating Area

(Mounted on an Infinite Heatsink at TC = 255C)

Figure 16. Pulse Train Safe Operating Area

(Mounted on an Infinite Heatsink at TC = 1255C)
VBATT = 16 V

VBATT = 16 V
RL = 0.1 W
RL = 0.1 W
L = 10 mH
L = 10 mH
5.0 V
5.0 V

VIN

VIN

RG = 1 kW

RG = 1 kW
RS = 55 mW

Figure 17. Circuit Configuration for

Short Circuit Test #1

Figure 18. Circuit Configuration for

Short Circuit Test #2

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NGD18N40CLBT4
100
R(t), TRANSIENT THERMAL RESISTANCE (C/Watt)

Duty Cycle = 0.5

0.2
10

0.1
0.05
0.02

0.01

0.1

0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1

P(pk)
Single Pulse

t1

0.001

t2
DUTY CYCLE, D = t1/t2

TJ(pk) TA = P(pk) RqJA(t)

RqJC X R(t) for t 0.2 s

0.0001
0.00001

0.0001

0.001

0.01
t,TIME (S)

Figure 19. Transient Thermal Resistance

(Nonnormalized JunctiontoAmbient mounted on
minimum pad area)

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7

0.1

NGD18N40CLBT4
PACKAGE DIMENSIONS
DPAK
CASE 369C01
ISSUE O
T
C

B
V

NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

SEATING
PLANE

R
4

A
S

K
F

J
L

H
D 2 PL

0.13 (0.005)

DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z

INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020

0.035 0.050
0.155

STYLE 7:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51

0.89
1.27
3.93

GATE
COLLECTOR
EMITTER
COLLECTOR

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NGD18N40CLB/D