H11D1/ H11D2/ H11D3/ H11D4

VISHAY

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection,

High BVCER Voltage
Features

CTR at IF = 10 mA, BVCER = 10 V: 20 %

Good CTR Linearly with Forward Current
Low CTR Degradation
Very High Collector-Emitter Breakdown Voltage
- H11D1/H11D2, BVCER = 300 V
- H11D3/H11D4, BVCER = 200 V
Isolation Test Voltage: 5300 VRMS
Low Coupling Capacitance
High Common Mode Transient Immunity
Package with Base Connection

Agency Approvals
UL - File No. E52744 System Code H or J
DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
BSI IEC60950 IEC60965
FIMKO

Applications
Telecommunications
Replace Relays

Description
The H11D1/ H11D2/ H11D3/ H11D4 are optocouplers with very high BVCER. They are intended for
telecommunications applications or any DC application requiring a high blocking voltage.

6 B

5 C

NC

4 E

i179004

The H11D1/ H11D2 are identical and the H11D3/

H11D4 are identical.

Order Information
Part

Remarks

H11D1

CTR > 20 %, DIP-6

H11D2

CTR > 20 %, DIP-6

H11D3

CTR > 20 %, DIP-6

H11D4

CTR > 20 %, DIP-6

H11D1-X007

CTR > 20 %, SMD-6 (option 7)

H11D1-X009

CTR > 20 %, SMD-6 (option 9)

H11D2-X007

CTR > 20 %, SMD-6 (option 7)

H11D3-X007

CTR > 20 %, SMD-6 (option 7)

For additional information on the available options refer to

Option Information.

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter

Test condition

Reverse voltage
DC forward current
Surge forward current
Power dissipation

Document Number 83611

Rev. 1.3, 16-Apr-04

t 10 s

Symbol

Value

Unit

VR

6.0

V
mA

IF

60

IFSM

2.5

Pdiss

100

mW

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H11D1/ H11D2/ H11D3/ H11D4

VISHAY

Vishay Semiconductors
Output
Parameter

Test condition

Collector-emitter voltage

Part

Symbol

Value

Unit

H11D1

VCE

300

H11D2

VCE

300

H11D3

VCE

200

H11D4

VCE

200

H11D1

VCBO

300

H11D2

VCBO

300

H11D3

VCBO

200

H11D4

VCBO

200

VBEO

7.0

Collector current

IC

100

mA

Power dissipation

Pdiss

300

mW

Collector-base voltage

Emitter-base voltage

Coupler
Parameter

Test condition

Symbol

Value

Unit

VISO

5300

VRMS

Insulation thickness between

emitter and detector

0.4

mm

Creepage distance

7.0

mm

Clearance distance

7.0

mm

Comparative tracking index (per

DIN IEC 112/VDE 0303, part 1)

175

Isolation test voltage (between

emitter and detector, refer to
climate DIN 50014, part 2,
Nov. 74)

Isolation resistance

VIO = 500 V, Tamb = 25 C

RIO

1012

VIO = 500 V, Tamb = 100 C

RIO

11

10

Storage temperature range

Tstg

- 55 to + 150

Operating temperature range

Tamb

- 55 to + 100

Tj

100

Tsld

260

Junction temperature
Soldering temperature

max. 10 sec., dip soldering:

distance to seating plane
1.5 mm

Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter

Test condition

Symbol

Forward voltage

IF = 10 mA

VF

Reverse voltage

IR = 10 A

VR

Min

Typ.

Max

1.1

1.5

6.0

Unit
V
V

VR = 6.0 V

IR

0.01

VR = 0 V, f = 1.0 MHz

CO

25

pF

Rthja

750

K/W

Thermal resistance

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2

10

Reverse current
Capacitance

Document Number 83611

Rev. 1.3, 16-Apr-04

H11D1/ H11D2/ H11D3/ H11D4

VISHAY

Vishay Semiconductors
Output
Parameter

Test condition

Collector-emitter breakdown
voltage

ICE = 1.0 mA, RBE = 1.0 M

Part

Symbol

Min

H11D1

BVCER

300

Typ.

Max

Unit
V

H11D2

BVCER

300

H11D3

BVCER

200

H11D4

BVCER

200

BVEBO

7.0

Emitter-base breakdown
voltage

IEB = 100 A

Collector-emitter capacitance

VCE = 10 V, f = 1.0 MHz

CCE

7.0

Collector - base capacitance

VCB = 10 V, f = 1.0 MHz

CCB

8.0

pF

Emitter - base capacitance

VEB = 5.0 V, f = 1.0 MHz

CEB

38

pF

Rth

250

K/W

Thermal resistance

pF

Coupler
Parameter

Test condition

Part

Coupling capacitance

Symbol

Min

Typ.

Current Transfer Ratio

IF = 10 mA, VCE = 10 V,
RBE = 1.0 M

IC/IF

Collector-emitter, saturation
voltage

IF = 10 mA, IC = 0.5 mA,

RBE = 1.0 M

VCEsat

Collector-emitter leakage
current

VCE = 200 V, RBE = 1.0 M

VCE = 300 V, RBE = 1.0 M,

TA = 100 C

Max

0.6

CC

Unit
pF

20

%
0.25

0.4

V
nA

H11D1

ICER

100

H11D2

ICER

100

nA

H11D1

ICER

250

H11D2

ICER

250

Current Transfer Ratio

Parameter

Test condition
IF = 10 mA, VCE = 10 V,
RBE = 1.0 M

Current Transfer Ratio

Symbol

Min

CTR

20

Min

Typ.

Max

Unit
%

Switching Characteristics
Switching times measurement-test circuit and waveforms
Test condition

Symbol

Turn-on time

Parameter

IC = 2.0 mA (to be adjusted by varying IF),

RL = 100 , VCC = 10 V

ton

5.0

Rise time

IC = 2.0 mA (to be adjusted by varying IF),

RL = 100 , VCC = 10 V

tr

2.5

Turn-off time

IC = 2.0 mA (to be adjusted by varying IF),

RL = 100 , VCC = 10 V

toff

6.0

Fall time

IC = 2.0 mA (to be adjusted by varying IF),

RL = 100 , VCC = 10 V

tf

5.5

Document Number 83611

Rev. 1.3, 16-Apr-04

Typ.

Max

Unit

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H11D1/ H11D2/ H11D3/ H11D4

VISHAY

Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.2

30

25

0.8

20

0.6

15
I CE /mA

NTCR

ICE = f (VCE, IF)

0.4

VCE =10 V,
normalized to IF = 10 mA,
NCTR = f (IF)

0.2

10

10-4

10-2

10-3 I /A
F

ih11d1_02

0
10-2

10-1
ih11d1_05

Fig. 1 Current Transfer Ratio (typ.)

10-1

100

101

102

Fig. 4 Output Characteristics

1.2

100

VCE /V

VF = f (IF, TA)

f=1.0 MHz,
CCE=f (VCE)
CCB=f (VCB), CEB=f (VEB)

90
80
70

VF /V

1.1

60
50
40

CXX /pF

1.0

30
20
10

0.9
ih11d1_03

10 -1

0
I F /mA

10

2
5 mA 10

10 1

Fig. 2 Diode Forward Voltage (typ.)

ih11d1_06

0
10-2

10-1

VXX /V

100

101

102

Fig. 5 Transistor Capacitances (typ.)

20

10-6

ICE = f (VCE, IB)

17.5

IF=0, RBE=1.0 M,
ICER=f(VCE)

10-7

15
10-8

12.5

10-9

7.5

CCER /A

I CE /mA

10

-11
10

2.5
0
10-2
ih11d1_04

10-1

VCE /V

Fig. 3 Output Characteristics

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4

-10
10

100

101

10-120

102
ih11d1_07

25

50

75

100

125

150

175

200

VCE /V

Fig. 6 Collector-Emitter Leakage Current (typ.)

Document Number 83611

Rev. 1.3, 16-Apr-04

H11D1/ H11D2/ H11D3/ H11D4

VISHAY

Vishay Semiconductors

400

100
IF = f (TA)

90

Ptot = f (TA)

350

80

300

70
250

60

200
Ptot /mW

IF /mA

50
40
30

150
100

20

50

10
0

0
0

10

20

ih11d1_08

30

40
TA /C

50

60

70

80

90

100

10

20

ih11d1_09

30

40
TA /C

50

60

70

80

90

100

Fig. 8 Permissible Power Dissipation

Fig. 7 Permissible Loss Diode

Input
0
IF

toff

ton
RL
IC

47

tpdoff

tpdon
VCC
VO
GND

td

Output
10%

tr

ts

tr
10%

50%

50%

90%

90%

ih11d1 _01

Fig. 9 Switching Times Measurement-Test Circuit and Waveform

Document Number 83611

Rev. 1.3, 16-Apr-04

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5

H11D1/ H11D2/ H11D3/ H11D4

VISHAY

Vishay Semiconductors
Package Dimensions in Inches (mm)

pin one ID

.248 (6.30)
.256 (6.50)
ISO Method A

.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.

.048 (0.45)
.022 (0.55)

.039
(1.00)
Min.

.130 (3.30)
.150 (3.81)

4
typ.
.018 (0.45)
.022 (0.55)

18
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.

39

.010 (.25)
typ.
.300.347
(7.628.81)

.114 (2.90)
.130 (3.0)

i178004

Option 7

Option 9
.375 (9.53)
.395 (10.03)

.300 (7.62)
TYP.

.300 (7.62)
ref.
.028 (0.7)
MIN.

.180 (4.6)
.160 (4.1) .0040 (.102)
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.

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6

.0098 (.249)

.012 (.30) typ.

.020 (.51)
.040 (1.02)

.315 (8.00)
min.

15 max.
18494

Document Number 83611

Rev. 1.3, 16-Apr-04

H11D1/ H11D2/ H11D3/ H11D4

VISHAY

Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83611

Rev. 1.3, 16-Apr-04

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