Si1912EDH

New Product

Vishay Siliconix

Dual N-Channel 20-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY

D TrenchFETr Power MOSFETS: 1.8-V Rated

D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package

VDS (V)

rDS(on) (W)

ID (A)

0.280 @ VGS = 4.5 V

1.28

APPLICATIONS

20

0.360 @ VGS = 2.5 V

1.13

0.450 @ VGS = 1.8 V

1.0

D Load Switching
D PA Switch
D Level Switch

SOT-363
SC-70 (6-LEADS)
1

D1

G1

G2

D2

S2

Marking Code
CA

XX

1 kW

1 kW

YY

S1

Lot Traceability
and Date Code
Part # Code

Top View

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Drain-Source Voltage

VDS

20

Gate-Source Voltage

VGS

"12

Continuous Drain Current (TJ = 150_C)

_ a

TA = 25_C

1.13

1.28
ID

TA = 85_C
Pulsed Drain Current

0.92

0.81

IDM

Continuous Diode Current (Diode Conduction)a

IS
TA = 25_C

Maximum Power Dissipationa

Unit

TA = 85_C

Operating Junction and Storage Temperature Range

PD

4
0.61

0.48

0.74

0.57

0.38

0.30

TJ, Tstg

W
_C

55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol
t v 5 sec

Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)

Steady State
Steady State

RthJA
RthJF

Typical

Maximum

130

170

170

220

80

100

Unit

_C/W
C/W

Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Document Number: 71408
S-03176Rev. A, 05-Mar-01

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Si1912EDH
New Product

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

VGS(th)

VDS = VGS, ID = 100 mA

0.45

Typ

Max

Unit

Static
Gate Threshold Voltage

Gate-Body Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-State Resistancea

Forward

Transconductancea

Diode Forward Voltagea

VDS = 0 V, VGS = "4.5 V

"1

mA

VDS = 0 V, VGS = "12 V

"10

mA

VDS = 16 V, VGS = 0 V

VDS = 16 V, VGS = 0 V, TJ = 85_C

VDS = 5 V, VGS = 4.5 V

rDS(on)

m
mA

VGS = 4.5 V, ID = 1.13 A

0.220

0.280

VGS = 2.5 V, ID = 0.99 A

0.281

0.360

VGS = 1.8 V, ID = 0.2 A

0.344

0.450

gfs

VDS = 10 V, ID = 1.13 A

2.6

VSD

IS = 0.48 A, VGS = 0 V

0.80

1.2

0.65

1.0

S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 1.13 A

0.2

nC

Gate-Drain Charge

Qgd

0.23

Turn-On Delay Time

td(on)

45

70

tr

85

130

350

530

210

320

Rise Time
Turn-Off Delay Time

VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W

td(off)

Fall Time

tf

ns

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Gate-Current vs. Gate-Source Voltage

Gate Current vs. Gate-Source Voltage

10

10,000

I GSS Gate Current (mA)

I GSS Gate Current (mA)

1,000
8

100
10

TJ = 150_C

1
0.1
TJ = 25_C

2
0.01
0

0.001
0

12

VGS Gate-to-Source Voltage (V)

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16

12

15

VGS Gate-to-Source Voltage (V)

Document Number: 71408
S-03176Rev. A, 05-Mar-01

Si1912EDH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

2.0

2.0
VGS = 5 thru 2 V

TC = 55_C
25_C

1.5
1.5 V

I D Drain Current (A)

I D Drain Current (A)

1.5

1.0

0.5

125_C
1.0

0.5

1V
0.0
0

0.0
0.0

0.5

VDS Drain-to-Source Voltage (V)

1.0

On-Resistance vs. Drain Current

Capacitance

120

0.5
C Capacitance (pF)

r DS(on) On-Resistance ( W )

140

VGS = 1.8 V
VGS = 2.5 V

0.3

VGS = 4.5 V
0.2

100
Ciss
80
60
40
Coss

0.1

0.0
0.0

Crss

20
0
0.5

1.0

1.5

2.0

Gate Charge

16

20

1.6

r DS(on) On-Resistance (W)

(Normalized)

VDS = 10 V
ID = 1.13 A

0
0.0

12

On-Resistance vs. Junction Temperature

VDS Drain-to-Source Voltage (V)

ID Drain Current (A)

V GS Gate-to-Source Voltage (V)

2.0

VGS Gate-to-Source Voltage (V)

0.6

0.4

1.5

0.3

0.6

0.9

Qg Total Gate Charge (nC)

Document Number: 71408

S-03176Rev. A, 05-Mar-01

1.2

1.5

1.4

VGS = 4.5 V
ID = 1.13 A

1.2

1.0

0.8

0.6
50

25

25

50

75

100

125

150

TJ Junction Temperature (_C)

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Si1912EDH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.6

2
TJ = 150_C

0.5
r DS(on) On-Resistance ( W )

I S Source Current (A)

TJ = 25_C

0.4
ID = 1.13 A
0.3

0.2

0.1

0.0

0.1
0

0.4

0.2

0.6

0.8

1.0

1.2

VSD Source-to-Drain Voltage (V)

VGS Gate-to-Source Voltage (V)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

0.2

5
ID = 100 mA

0.1

0.0
3

Power (W)

V GS(th) Variance (V)

0.1

0.2
1

0.3

0.4
50

25

25

50

75

100

125

150

0
0.01

0.1

10

100

600

Time (sec)

TJ Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1
PDM

0.1

0.05
t1
t2
1. Duty Cycle, D =

t1
t2

2. Per Unit Base = RthJA = 170_C/W

0.02

3. TJM TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
104

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103

102

101
1
Square Wave Pulse Duration (sec)

10

100

600

Document Number: 71408

S-03176Rev. A, 05-Mar-01

Si1912EDH
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot
2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
0.1
0.1

0.05

0.02
Single Pulse

0.01
104

Document Number: 71408

S-03176Rev. A, 05-Mar-01

103

102
101
Square Wave Pulse Duration (sec)

10

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Vishay

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All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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Document Number: 91000

Revision: 18-Jul-08

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