VMMK-2103, VMMK-2203, VMMK-2303,

VMMK-2403, VMMK-2503

Reliability Data Sheet

Description
This document describes the reliability performance of
VMMK-2x03 based on a series of reliability tests conducted. VMMK-2x03 is fabricated using Avago Technolodiess
industry leading E-PHEMT technology associated with
chip scale surface mount leadless package with GaAs
encapsulation. VMMK-2x03 are intended for 0.5 11GHz
range of wireless application.

VMMK-2203 and VMMK-2403 had been subjected to extensive reliability stress tests to predict the mean time to
failure and associated distribution. The reliability performance of VMMK-2103, VMMK-2303 and VMMK-2503 were
leveraged on these two products based on similarity in
packaging and wafer fabrication process.

Table 1. High Temperature Operational Life Test Results

Product

Stress Test
Condition

Total Units
Tested

Total Device
Hours

No. of Failed
Units

VMMK-2203

Tch = 150C, Typical DC Bias

48

48,000

VMMK-2403

Tch = 150C, Typical DC Bias

48

48,000

VMMK-2203 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB
VMMK-2403 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB, OIP3 degradation > 2dBm

Table 2. Reliability prediction using Table 1 results:

Channel
Temp. (C)

Point Typical
Performance
MTTF hours

90%
Confidence
MTTF hours

Point Typical
Performance
FIT

90%
Confidence
FIT

150

9.600 X 104

4.165 X 104

10416.7

24010.4

125

4.637 X 106

2.012 X 106

215.7

497.1

100

3.766 X 108

1.634 X 108

2.7

6.1

85

7.074 X 109

3.069 X 109

0.141

0.326

65

5.296 X 1011

2.298 X 1011

0.002

0.004

50

1.914 X 1013

8.304 X 1012

0.00005

0.00012

Notes:
1. Arrhenius model with constant failure rate assumed. Activation energy Ea= 2.25eV derived from multi-temperature stress testing.
2. The point MTTF (representing an estimate of the mean point MTTF) is the total device hours divided by either the number of failures or unity if
there are no failures.
3. 90% confident MTTF and failure rate represent the minimum level of reliability performance that is expected from 90% of all samples. This
confidence interval is based on the statistics of the assumed exponential distribution of failures.
4. FIT = failure per 109 device hours.
5. Thermal Resistance qch-b: VMMK-2203 = 107C/W, VMMK-2403 = 161C/W

Note: These devices are esd sensitive, the following precautions are strongly recommended. EnEnsure that an esd approved carrier is used when units are transported
from one destination to another. personal groundings is to be worn at all times when handling these devices. the manufacturer assumes no responsibilities for esd damage due to
improper storage and handling of these devices.

Table 3. Product Qualification Operational Life Test Results [1]

Stress

Product

Conditions

Duration

Failures/number tested

High Temperature
Operating Life (HTOL)

VMMK-2203

Vd = 5V, Id 23mA with junction

temperature of 150C

1000hrs

0/48

VMMK-2403

Vd = 5V, Id 52mA with junction

temperature of 150C

1000hrs

0/48

VMMK-2203

85C/85%RH,
Vd = 5V, Id = 23mA

1000hrs

0/48

VMMK-2403

85C/85%RH,
Vd = 5V, Id = 52mA

1000hrs

0/48

Wet High Temperature

Operating Life (WHTOL)

VMMK-2203 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB
VMMK-2403 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB, OIP3 degradation > 2dBm

Table 4. Product Qualification Unbiased Environmental Stress Results [1]

Stress

Product

Conditions

Duration

Failures/number tested

Temperature Cycle

VMMK-2203

JESD22A-104C, Cond B
-55 C /+125C,
15mins dwell (Air to Air)

500 cycles

0/90

500 cycles

0/88

1000hrs

0/90

1000hrs

0/87

1000hrs

0/90

1000hrs

0/85

1000hrs

0/89

1000hrs

0/88

VMMK-2403
Low Temperature
Storage Life

VMMK-2203

JESD22-A119, Cond A
-40C

VMMK-2403
High Temperature
Storage Life

VMMK-2203

JESD22-A103C, Cond A
125C

VMMK-2403
Temperature Humidity
Storage Life

VMMK-2203

85 C/85%RH

VMMK-2403

VMMK-2203 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB
VMMK-2403 Failure criterion: Id degradation > 20%, NF & Gain degradation > 0.5dB, OIP3 degradation > 2dBm
Note [1]: Life parts were sampled from 3 different wafers.

Table 5. Mechanical Test Results [2]

Stress

Conditions

Duration

Failures/number tested

Drop Test

JESD22-B111

60 drops

0/60

Cycle Bending Test

Amplitude = 2mm

50 cycles

0/60

Vibration

JESD22-B103-B
20Hz -2kHz @ 20Hz/min
For 3 axis (X, Y & Z)

4 cycles / axis
(4mins/axis/cycle)

0/102

Temperature Cycle

JESD22A-104C, Cond G
-40C/125C,
15mins dwell (Air to Air)

500 cycles

0/143

Solder Dip Test

JESD22-B102E
245C5C, Pb Free Solder

5secs / dip

0/66

Failure criterion: resistance change > 200%.

Solder Dip failure criterion: solder coverage < 95% on individual solder pads..
Note [2]: Daisy chain parts were sampled from 3 different wafers.

Table 6. Electrostatic Discharge (ESD) Test Results

VMMK-2103
ESD Test

Reference:

Results

Human Body Model

JESD22-A114

125V (Class 0)

Machine Model

JESD22-A115

50V (Class A)

ESD Test

Reference:

Results

Human Body Model

JESD22-A114

450V (Class 1A)

Machine Model

JESD22-A115

40V (Class A)

ESD Test

Reference:

Results

Human Body Model

JESD22-A114

300V (Class 1A)

Machine Model

JESD22-A115

40V (Class A)

ESD Test

Reference:

Results

Human Body Model

JESD22-A114

675V (Class 1B)

Machine Model

JESD22-A115

50V (Class A)

ESD Test

Reference:

Results

Human Body Model

JESD22-A114

625V (Class 1B)

Machine Model

JESD22-A115

60V (Class A)

VMMK-2203

VMMK-2303

VMMK-2403

VMMK-2503

ESD Failure criterion: Leakage current increase > 10x after exposure to ESD pulse.

HBM

ESD Sensitivity

Class 0 is ESD voltage level < 250V, Class 1A is voltage

level between 250V and 500V, Class 1B is voltage level between 500V and 1000V, Class 1C is voltage level between
1000V and 2000V, Class 2 is voltage level between 2000V
and 4000V, Class 3A is voltage level between 4000V and
8000V, Class 3B is voltage level > 8000V.

Note: The device is classified as ESD sensitive. The following precautions should be taken:

MM
Class A is ESD voltage level <200V, Class B is voltage level
between 200V and 400V, Class C is voltage level > 400V.

1. Ensure Faraday cage or conductive shield bag is used

when the device is transported from one destination to
another.
2. At SMT assembly station, if the static charge is above
the device sensitivity level, place an ionizer near to the
device for charge neutralization purpose.
3. Personal grounding has to be worn at all time when
handling the device.

Moisture Sensitivity Level: Level 2

Preconditioning per J-STD-020 Level 2 was performed on
all devices prior to reliability testing.

For product information and a complete list of distributors, please go to our web site:

www.avagotech.com

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Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved.
AV02-1995EN - June 25, 2009