Escolar Documentos
Profissional Documentos
Cultura Documentos
(RFM6
N45,
RFP6N4
5,
RFP6N5
0)
/Subject
(6A,
450V
and
500V,
1.250
Ohm, NChannel
Power
MOSFETs)
/Author
()
/Keywords
(Harris
Semiconductor, NChannel
Power
MOSFETs,
TO204AA,
TO220AB)
/Creator
()
/DOCIN
RFM6N45, RFP6N45,
RFP6N50
Semiconductor
September 1998
Features
Description
rDS(ON) = 1.250
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM6N45
TO-204AA
RFM6N45
RFP6N45
TO-204AA
RFP6N45
RFP6N50
TO-220AB
RFP6N50
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
5--1
File Number
1494.2
RFM6N45
450
450
6
15
20
100
0.8
-55 to 150
RFP6N45
450
450
6
15
20
75
0.6
-55 to 150
RFP6N50
500
500
6
15
20
75
0.6
-55 to 150
UNITS
V
V
A
A
V
W
W/oC
oC
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
MIN
TYP
MAX
UNITS
RFM6N45, RFP6N45
450
RFP6N50
500
25
100
nA
1.250
7.50
15
45
ns
40
80
ns
td(OFF)
190
300
ns
tf
60
100
ns
1500
pF
250
pF
200
pF
1.25
oC/W
1.67
oC/W
SYMBOL
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
CISS
Output Capacitance
COSS
CRSS
RJC
TEST CONDITIONS
ID = 250A, VGS = 0V
RFM6N45
RFP6N45, RFP6N50
SYMBOL
VSD
trr
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISD = 3A
1.4
800
ns
NOTES:
2. Pulsed test: Pulse width 300s duty cycle 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
5-2
1.0
1.2
0.8
0.6
0.4
5
4
3
2
1
0.2
0
50
100
0
25
150
50
10
100W
150
VGS = 6V
VGS = 5V
8
6
4
2
VGS = 4V
0
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
6
8
10
12
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
14
2.4
14
VDS = 20V
80s PULSE TEST
DUTY CYCLE 2%
125
12
DC OPERATION
100
TC = 25oC
75W
75
10
6
25oC
125oC
2
VGS = 10V
PULSE DURATION = 80s
DUTY CYCLE 2%
2.0
1.6
125oC
1.2
25oC
0.8
-40oC
0.4
-40oC
0
0
2
4
VGS, GATE TO SOURCE VOLTAGE (V)
6
10
8
ID, DRAIN CURRENT (A)
12
14
5-3
(Continued)
1.5
NORMALIZED GATE
THRESHOLD VOLTAGE
2.5
1.5
1.0
0.5
0.5
0
50
100
TJ, JUNCTION TEMPERATURE (oC)
0
-50
150
500
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
CISS
600
COSS
200
CRSS
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
150
1400
0
50
100
TC, JUNCTION TEMPERATURE (oC)
10
VDD = BVDSS
375
GATE
SOURCE
VOLTAGE
250
RL = 83
IG(REF) = 1.1mA
VGS = 10V
125
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
8
VDD = BVDSS
6
50
-50
C, CAPACITANCE (pF)
VGS = VDS
ID = 250A
ID = 6A
VGS = 10V
ON RESISTANCE
3.5
I
20 G(REF)
IG(ACT)
t, TIME (s)
I
80 G(REF)
IG(ACT)
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
RG
VDD
10%
10%
DUT
90%
VGS
VGS
10%
50%
50%
PULSE WIDTH
5-4