Four Point Probe

1.

Theory
1.

2.

3.

Why 4 probes instead of 2?

1. When the resistance of the probe/sample contact becomes comparable
to the resistance of the sample itself, it is necessary to separate the
probes that measure the voltage from the probes that conduct the
current. Otherwise, The contact resistance would be measured in
addition to the sample resistance. By placing the voltmeter probes
between the current source probes, only the voltage drop caused by that
part of the sample itself is measured. This is standard practice for
measuring the resistivity of semiconducting materials.
Geometric considerations
1.

T less than half the probe

2.

For infinitely large layers with thickness

3.

spacing s,
To find the geometric factor, G, for configurations other than thin layers,
consult the Haldor Topsoe Manual (from Four-Point-Probes.com).

Units
1.
2.

Ohms: Resistance.
Ohms per square (Ohms/SQ): Sheet resistance.
a. For a two-dimensional material, this is the resistance seen from
one side of a square to the other, regardless of the size of the
square. This is because for a square, L=W. Thus, L/W=1 and
R=RsL/W becomes R=Rs. Note that the sheet resistance does
not take into account the layer thickness, T.

b.

a.

3.

Ohm-cm: Resistivity.
a.

4.

Converting sheet resistance (Ohms/SQ) to resistivity (Ohm-cm)

Derivation

b.

Equation

HALDOR TOPSOE
"Geometric Factors in Four Point Resistivity Measurement"
http://www.four-point-probes.com/haldor.html
Question:
What is the need for correction factors in four point probe measurements?
Answer: The geometry of the sample determines the correction factors that must be used,
additionally the position of the probes on the sample and the spacings between the probes.
The need for correction factors is caused by the proximity of a boundary which limits the
possible current paths in the sample. The most basic sample would be semi-infinite in extent
i.e., it extends to infinity in all directions below the plane in which the four probes are located.
All other cases would restrict the current paths available, eg., an infinite plane sample of finite
thickness requires a correction factor based on the thickness.

________________________________
The table shown immediately below pertains to one of the most commonly needed
correction factors, i.e., correction factors for measuring a "thin, circular slice". After the
table, you will find links to all of the pages from the 1966 (revised 1968) Haldor Topsoe
book, "Geometric Factors in Four Point Resistivity Measurement",with each page
available as an individual PDF file. The book covers a wide range of correction factor
topics.

Correction factors for measuring a thin circular slice, measured in the

center
The following table pertains to sheet resistance measurements made in the center of a
circular slice. d/s = diameter of sample divided by probe spacing (probe spacing being the
distance between any two adjacent probes). For example, a 4mm diameter sample probed
with a four point probe with 1mm tip spacing would have a correction factor of 0.6462. A
100mm wafer measured with a four point probe head that has 1mm tip spacing would
have a correction factor of 0.9991. A result better than 0.1% can be obtained by measuring
in the center of a circle with diameter greater than 100 x s., better than 1% is obtained with
40 x s.

d/s

Correction

0.5

3.448

0.5734

0.6462

0.7419

6.061

0.8089

7.5

0.8665

8.696

0.8972

10

0.9204

12.5

0.9475

15

0.9628

20

0.9788

28.57

0.9895

40

0.9945

100

0.9991

infinite

Haldor Topsoe book, "Geometric Factors in Four Point

Resistivity Measurement"
haldor.exe 11,088K Self extracting file containing 64 individual PDF files that make
up the Haldor Topsoe four point probe reference book, "Geometric Factors in Four
Point Resistivity Measurement"