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10
10
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21

20

19

18

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20

Depth [nm]

Concentration [cm3]

MOBILITYMODELTHATACCOUNTSFORTHEVALENCE
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20

40

Depth [nm]

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,# "
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#ONCLUSION

4.3e+01
-5.2e+01



;=6-OROZETALg/PTIMIZINGBORONJUNCTIONSTHROUGHPOINTDEFECT
ANDSTRESSENGINEERINGUSINGCARBONANDGERMANIUMCO IMPLANTSs
!PPLIED0HYSICS,ETTERSVOLP!UGUST

Vt [V]

)NCOMPARISONWITHRECENTLYPUBLISHEDRESULTS
FOR THE SAME TECHNOLOGY NODE ;=;=;=
THE SIMULATED )ON)OFF CHARACTERISTIC FOLLOWS
THE SAME TREND AS THE COMPARABLE  NM
TECHNOLOGIESSEE&IGURE 

Pressure [Pa]
4.0e+09






STRAINED STRESS ENHANCEMENT FROM PROCESS

.-/3&%4ISAPPROXIMATELYHIGHERTHAN
THE CONVENTIONAL SILICON DEVICE SIMULATED
WITHOUT ANY PROCESS INDUCED STRESS )N THE
CASE OF A 0-/3&%4 AN APPROXIMATELY 
IMPROVEMENTOF)ONWASOBTAINED

3.9e+05

&IGUREB4WO DIMENSIONALSTRESSDISTRIBUTIONINTHE.-/3








34)

&IGUREB3IMULATEDOUTPUTCHARACTERISTICS
OFA NMGATE-/3&%44HEDRAIN
CURRENTISSIMULATEDWITHFOURDIFFERENT
GATE BIASCONDITIONSKEEPINGTHESUBSTRATE
GROUNDED

-ULTILEVEL-ODELINGOF,AYOUT)MPACTON-OBILITY%NHANCEMENTWITH$UAL3TRESS
,INERS
)NTRODUCTION
$UALSTRESSLINERS$3,S AREUSEDTOINTRODUCE
UNIAXIAL TENSILE AND COMPRESSIVE CHANNEL
STRESSES TO ENHANCE BOTH .&%4 AND 0&%4
DEVICES SIMULTANEOUSLY ;=k;= #OMPARED
TO LOCAL STRESS ENGINEERING TECHNIQUES SUCH
AS EMBEDDED 3I'E IN SOURCE AND DRAIN
REGIONS THE $3, TECHNIQUE YIELDS SIMILAR
MOBILITY ENHANCEMENT WITH SIMPLER PROCESS
INTEGRATION (OWEVER THE STRESS ORIGINATING
FROM A $3, HAS GLOBAL CHARACTERISTICS AND
DEPENDSONLAYOUT
,AYOUTPARAMETERSSUCHASTHEGATEPOLYPITCH
ANDTHESPACINGBETWEENEDGESOFTHESTRESS
LINERANDTHEACTIVEREGIONCANGREATLYIMPACT
STRESS DISTRIBUTIONS 4ECHNOLOGY OPTIMIZATION
OF MOBILITY ENHANCEMENT REQUIRES ACCURATE
PREDICTIONOFBOTHCHANNELSTRESSFROMGLOBAL
SOURCESANDLOCALDOPANTPROFILESFROMDEVICE
FABRICATIONPROCESSES
4RADITIONAL4#!$SIMULATORSAREMOSTEFFICIENT
FORACCURATEPROCESSANDDEVICESIMULATIONON
THETRANSISTORORLOCAL LEVEL
4OCONSIDERGLOBALSTRESSEFFECTSONTHELAYOUT
LEVEL3YNOPSYSHASINTRODUCEDANEWGLOBAL
STRESSSIMULATOR&AMMOS48;=FORANALYZING
THEIMPACTOFBACKENDPROCESSANDSTRESSON
4#!$.EWS3EPTEMBER

INTERCONNECT RELIABILITY &AMMOS 48 HAS TWO

MAINAPPLICATIONS
p 4O PERFORM BACKEND PROCESS AND STRESS
SIMULATIONS FOR INTERCONNECT RELIABILITY
ANALYSIS SUCH AS IDENTIFYING STRESS HOT
SPOTS THAT ARE SUSCEPTIBLE TO DEBONDING
VOIDINGANDCRACKING 
p 4OCOMPLEMENTTRADITIONAL4#!$SIMULATORS
BYPROVIDINGROBUSTGLOBALSTRESSANALYSIS
&AMMOS 48 CAN GENERATE THREE DIMENSIONAL
$ STRUCTURESDIRECTLYFROMPROCESSRECIPES
AND LARGE '$3)) LAYOUTS )TS STRESS MODELS
ACCOUNT FOR VARIOUS STRESS SOURCES AND ITS
GEOMETRIC MODELS INCLUDE PROXIMITY EFFECTS
FROM LAYOUT 7ITH SPECIALIZED ALGORITHMS
FOR FAST $ STRUCTURE CONSTRUCTION MESH
GENERATIONANDEQUATIONSOLVING&AMMOS48
PREDICTSINTERCONNECTSTRESSDISTRIBUTIONSFROM
MULTIPLESTRESSSOURCESANDACCOUNTSFORLAYOUT
PROXIMITY EFFECTS ON INTERCONNECT RELIABILITY
&AMMOS48ALSOINCLUDESAMATERIALPROPERTY
DATABASE WITH EXTENSIVE SEMICONDUCTOR AND
PACKAGING MATERIALS FOR EASILY ASSESSING THE
IMPACT OF MATERIALS ON STRESS )N ADDITION
&AMMOS 48 INTERFACES TO OTHER 4#!$ AND
$ESIGN FOR -ANUFACTURING $&- TOOLS TO
FACILITATE TECHNOLOGY EXPLORATION AT MULTIPLE
LEVELS

4HIS ARTICLE DEMONSTRATES HOW GLOBAL STRESS

ANALYSIS AND LOCAL LEVEL PROCESS SIMULATION
CANBECOMBINEDTOSTUDYTHELAYOUTIMPACTON
MOBILITYENHANCEMENTWITHTHE$3,TECHNIQUE
)NTHEEXAMPLETHEEFFECTOFLAYOUTPARAMETERS
SUCHASPOLYPITCHANDINTERFACESPACINGON
CHANNELSTRESSDISTRIBUTIONISANALYZED4HEN
THESIMULATEDGLOBALSTRESSFIELDSAREUSEDTO
ESTIMATETHEMOBILITYCHANGES
!T THE END OF THE EXAMPLE THE MULTILEVEL
APPROACHISAPPLIEDTOILLUSTRATETHEINTEGRATION
OFGLOBALSTRESSFIELDSANDLOCALDOPANTPROFILES
FOREFFICIENTPROCESSSIMULATIONANDACCURATE
DEVICEMODELING

-ODELINGOF,AYOUT)MPACTON#HANNEL
3TRESSFROM'LOBAL3OURCESUSING
&AMMOS48
)TISWELLKNOWNTHAT-/3&%4CHANNELSTRESS
ISDEPENDENTONGEOMETRYSUCHASPOLYPITCH
AND THE PROXIMITY TO STRESS LINER BOUNDARIES
4HEFOLLOWINGSECTIONPRESENTSANANALYSISOF
THESEEFFECTSUSING&AMMOS48
&IGURESHOWSTHELAYOUTOFATESTSTRUCTURE
5SING THE 3YNOPSYS MASK EDITING TOOL
)# 7ORK"ENCH LAYOUT PARAMETERS ARE
PARAMETERIZEDEASILYANDSIMULATIONSPLITSARE
GENERATED TO INVESTIGATE GEOMETRY EFFECTS

ENy
SA
Active Si

ENx

Compressive ESL
Tensile Etch Stop Layer (ESL)
&IGURE4ESTSTRUCTURELAYOUT3!ISTHEDISTANCEFROMTHECENTEROFTHEPOLYTOTHEEDGEOFTHEACTIVE
AREA%.XAND%.YARETHEDISTANCESBETWEENTHEACTIVEAREAANDTHEINTERFACEOFNITRIDELINERSINTHE
X DIRECTIONANDY DIRECTIONRESPECTIVELY

4#!$.EWS
UP SIMULATIONS AND TO AVOID THE DIFFICULTY OF SUBSET REGION IS CHOSEN SO THAT VARIATIONS IN
BUILDINGCOMPLICATED$STRUCTURESANDMESH THE LAYOUT DO NOT ALTER THE ACTIVE REGION OR
WITHOUTSACRIFICINGACCURACY
INFLUENCETHEBOUNDARYONLYONE$3ENTAURUS
4HEABOVEANALYSISILLUSTRATESTHEAPPLICATION 0ROCESS SIMULATION IS REQUIRED (OWEVER
OF &AMMOS 48 IN FRONTEND STRESS SIMULATION DECREASINGTHEPOLYPITCHMAYCREATEIMPLANT
WHERE THE STRESS IS FROM GLOBAL SOURCES ! SHADOWING AS THE FIRST DUMMY POLY LINE
MAJORADVANTAGEOFUSING&AMMOS48ISTHAT APPROACHESTHEEDGEOFTHESIMULATIONREGION
ITCANWORKWITH4#!$PROCESSSIMULATIONSTO FOR 3ENTAURUS 0ROCESS THEREBY REQUIRING
CAPTUREALLOFTHENECESSARYSTRESSINFORMATION MULTIPLESIMULATIONS

(ERE3!AND%.YAREINITIALLYFIXEDAND%.X

IS VARIED TO STUDY THE LATERAL BOUNDARY EFFECT
,"%  3UBSEQUENTLY 3! AND %.X ARE FIXED
AND %.Y IS VARIED TO STUDY THE TRANSVERSE
BOUNDARYEFFECT4"% &IGURESANDSHOW
ANEXAMPLEOFA$MESHANDTHELATERALSTRESS FROMBACKENDSCALEFRONTENDLAYOUTSCALETO
DISTRIBUTION FOR ONE &AMMOS 48 SIMULATION LOCALDEVICESCALE3UCHINFORMATIONFACILITATES
SPLITRESPECTIVELY
ACOMPLETEUNDERSTANDINGANDIMPLEMENTATION
4HE ,"% AND 4"% TRENDS ARE SHOWN IN OF$3,PROCESSINTEGRATION
&IGURESANDWHERETHESTRESSESHAVEBEEN
AVERAGEDUNDERTHECHANNEL)NTHISEXAMPLE
3YYISMAINLYDEPENDENTON%.YWHILE3XXIS
DEPENDENTONBOTH%.XAND%.Y
&IGURE  SHOWS THAT &AMMOS 48 GIVES THE
SAMETRENDOFMOBILITYCHANGESFORTHIS0-/3
TRANSISTORASIN;=WHERETHEPIEZORESISTANCE
MODEL PROPOSED BY $ORDA ;= WAS USED
TO COMPUTE THE HOLE MOBILITY CHANGES )N
ADDITION THE EFFECT OF POLY PITCH ON LATERAL
COMPRESSION UNDER THE -/3&%4 CHANNEL IS
SIMULATED &IGURE  SHOWS THAT AS THE POLY
PITCHINCREASES3XXSATURATES

)NTEGRATING3TRESS$ISTRIBUTIONSFROM
'LOBAL-ODELAND$OPANT0ROFILESFROM
,OCAL-ODEL
4HE TRADITIONAL 4#!$ PROCESS SIMULATOR
3ENTAURUS 0ROCESS IS USED TO PERFORM
DETAILED PROCESS SIMULATION TO FABRICATE A
SINGLE TRANSISTOR 4HE PROCESS STEPS INCLUDE
IMPLANTATION AND DIFFUSION THAT ARE ABSENT
IN THE &AMMOS 48 SIMULATION $3, STRESSES
SOLVEDFORIN&AMMOS48CANBEMERGEDWITH
THE DOPING PROFILES OF 3ENTAURUS 0ROCESS
USING THE MESHING ENGINE 3ENTAURUS -ESH
AS SHOWN IN &IGURE  3TRESSES IN THE
SURROUNDING AREAS OUTSIDE THE DEVICE ACTIVE
REGIONAREDISCARDEDINTHEFINALSINGLEDEVICE
STRUCTURE 4HIS SUBSET STRUCTURE COMBINES
THEIMPURITYDISTRIBUTIONSINTHEACTIVEDEVICE
AREA AS SIMULATED IN 3ENTAURUS 0ROCESS AND
THE LAYOUT INFLUENCED $3, CHANNEL STRESSES
PROVIDEDBY&AMMOS48

3IMULATIONSWITHRECTANGULAR SHAPEDSPACERS
AREPERFORMEDSEE&IGURE TOEVALUATETHE
EFFECTOFGEOMETRYROUNDINGONCHANNELSTRESS
4HE LATERAL STRESS DISTRIBUTIONS ARE SHOWN IN
&IGURE  &OR THE SAME PROCESS CONDITIONS
THE DIFFERENCE OF THE AVERAGE STRESS UNDER
THE CHANNEL BETWEEN &IGURE  AND &IGURE 
IS LESS THAN  BUT THE SIMULATION TIME IS 7HEN USING A 3ENTAURUS 0ROCESS STRUCTURE
REDUCED SHARPLY &OR MANY APPLICATIONS A ASASUBSETOFALARGER&AMMOS48STRUCTURE
SIMPLIFIED STRUCTURE CAN BE USED TO SPEED SEVERAL FACTORS MUST BE CONSIDERED )F THE

0
-50

Sxx [MPa]

!FTER THE DATA FROM THE STRUCTURES IS MERGED

AND CONTACTS HAVE BEEN PLACED 3ENTAURUS
$EVICECANBEUSEDTOSIMULATETHEIMPACTOF
THESTRESSONDEVICEPERFORMANCE3ENTAURUS
$EVICE HAS A COMPREHENSIVE SET OF STRESS
RELATED MODELS INCLUDING STRESS DEPENDENT
MOBILITYANDBANDGAPNARROWING
3UMMARY
4HISARTICLEHASDEMONSTRATEDACOMPUTATIONALLY
EFFICIENT MULTILEVEL MODELING APPROACH TO
ANALYZELAYOUTIMPACTONMOBILITYENHANCEMENT
WITH$3,S4HEAPPROACHSEPARATESTHESTRESS
ANALYSISATTHEGLOBALLEVELFORTHE$3,PROCESS
STEPS FROM THE DOPANT PROFILE SIMULATION AT

ENy = 70 nm
ENy = 170 nm

-150
-200
-250
-300
-350
0

200

400

600

70

TBE, ENy

60

LBE, ENx

2.5e+00
-2.5e+00
-7.2e+01
-2.0e+03

&IGURE4HELATERALSTRESS3XXDISTRIBUTIONUNDER
THECHANNEL4HECOMPRESSIVELATERALSTRESSINTHE
CHANNELISINDUCEDBYTHECOMPRESSIVENITRIDE
LAYER

Sxx_Element [1]
2.0e+03

10

130

7.2e+01

200

400

600

2.5e+00

800

-2.5e+00

110

500

100

400
300

-7.2e+01
-2.0e+03

&IGURE,ATERALSTRESS3XXDISTRIBUTIONOFA
REPEATEDSIMULATIONOF&IGUREWITHRECTANGULAR
SPACERS

StressXX [Pa]
0.0e+00

ENx = ENy = 70 nm, 2.5 GPa

2.0 GPa
1.7 GPa

120

600

-6.0e+07
-1.2e+08
-1.8e+08

90

-2.4e+08

80

-3.0e+08

70
60

100
0

;=' $ORDA g0IEZORESISTANCE IN 1UANTIZED #ONDUCTION "ANDS IN

3ILICON )NVERSION ,AYERSs *OURNAL OF !PPLIED 0HYSICS VOL 
NOPPk

20

&IGURE0-/3MOBILITYCHANGECOMPUTEDBY
APPLYINGTHEPIEZORESISTANCEMODELUSINGTHE
AVERAGECHANNELSTRESS

Sxx [a.u.]

Syy [MPa]
7.2e+01

;=&AMMOS48MANUALS-OUNTAIN6IEW#ALIFORNIA3YNOPSYS)NC



EN[x,y] [nm]

200
Sxx_Element [MPa]
2.0e+03

;=7 ( ,EE ET AL g(IGH 0ERFORMANCE  NM 3/) 4ECHNOLOGY

WITH %NHANCED 4RANSISTOR 3TRAIN AND !DVANCED ,OW + "%/,s
IN )%$- 4ECHNICAL $IGEST 7ASHINGTON $# 53! $ECEMBER


30

Syy (independent of ENx)

700

;=' %NEMAN ET AL g3CALABILITY OF 3TRAINED .ITRIDE #APPING

,AYERSFOR&UTURE#-/3'ENERATIONSsIN%UROPEAN3OLID 3TATE
$EVICE 2ESEARCH #ONFERENCE %33$%2#  'RENOBLE &RANCE
PPk3EPTEMBER

40

800

&IGURE3XXISSTRONGLYDEPENDENTON%.XAND
SLIGHTLYDEPENDENTON%.Y

800

;=# $ 3HERAW ET AL g$UAL 3TRESS ,INER %NHANCEMENT IN (YBRID

/RIENTATION 4ECHNOLOGYs IN 3YMPOSIUM ON 6,3) 4ECHNOLOGY
+YOTO*APANPPk*UNE

50

ENx [nm]

&IGURE3NAPSHOTOFTHEMESHUSEDINTHIS
EXAMPLE

;=3 0IDIN ET AL g! .OVEL 3TRAIN %NHANCED #-/3 !RCHITECTURE

5SING3ELECTIVELY$EPOSITED(IGH4ENSILE!ND(IGH#OMPRESSIVE
3ILICON.ITRIDE&ILMSsIN)%$-4ECHNICAL$IGEST3AN&RANCISCO
#!53!PPk$ECEMBER

80

ENy = 0 nm

-100

-400

THE LOCAL DEVICE LEVEL USED IN EARLY DEVICE

FABRICATIONSTEPS4HESTRESSANALYSISREQUIRES
CONSIDERATION OF PROXIMATE EFFECTS THAT ARE
UBIQUITOUS IN THE LAYOUT AT THE GLOBAL LEVEL
WHILETHEDOPANTPROFILESIMULATIONISCONFINED
TO THE LOCAL GEOMETRY IN A SUBSTRUCTURE
#OMBININGSTRESSFIELDSFROMAGLOBAL&AMMOS
48SIMULATIONANDDOPANTPROFILESFROMALOCAL
3ENTAURUS 0ROCESS SIMULATION ALLOWS THE
!NOTHER IMPORTANT CONSIDERATION IS THAT ONLY EFFICIENT ACQUISITION OF STRESS INFORMATION FOR
GEOMETRIC ETCHINGANDDEPOSITIONOPERATIONS ACCURATEDEVICEMODELING
CAN BE USED TO CREATE THE STRUCTURE 4HE
3ENTAURUS0ROCESSSTEPSTHATINVOLVEMOVING 2EFERENCES
BOUNDARIESSUCHASOXIDATIONANDSILICIDATION
;=0'RUDOWSKIETALg $AND $'EOMETRY%FFECTSIN5NIAXIALLY
WOULD PRODUCE A DIFFERENT STRUCTURE THAN
3TRAINED $UAL %TCH 3TOP ,AYER 3TRESSOR )NTEGRATIONSs IN
3YMPOSIUMON6,3)4ECHNOLOGY(ONOLULU()53!PPk
&AMMOS 48 IN THE ACTIVE REGION 4HEREFORE
*UNE
STRESSFROMTHELINEROXIDATIONANDSILICIDATION ;=%,EOBANDUNGETALg(IGH0ERFORMANCENM3/)4ECHNOLOGY
IS EXCLUDED 4HE APPROACH ILLUSTRATED IN
WITH $UAL 3TRESS ,INER AND LOW CAPACITANCE 32!- CELLs IN
3YMPOSIUM ON 6,3) 4ECHNOLOGY +YOTO *APAN PP k
THIS ARTICLE IS APPLICABLE TO CASES WHEN THE
*UNE
$3, STRESSES ARE SIGNIFICANTLY STRONGER THAN ;=( 3 9ANG ET AL g$UAL 3TRESS ,INER FOR (IGH 0ERFORMANCE
SUB NM 'ATE ,ENGTH 3/) #-/3 -ANUFACTURINGs IN )%$-
STRESSES GENERATED BY PROCESS STEPS EARLIER
4ECHNICAL $IGEST 3AN &RANCISCO #! 53! PP k
INTHEFLOW
$ECEMBER

Change of Mobility [%]

4HESETOOLSCANBEINTEGRATEDINTO3ENTAURUS
7ORKBENCH
3ENTAURUS
7ORKBENCH
6ISUALIZATIONISUSEDTOANALYZEINTEGRATEAND
AVERAGETHESTRESS

50

200

400

600

800

ENy [nm]

&IGURE3YYISINDEPENDENTOF%.XANDSOLELY
DEPENDENTON%.Y

40

500

1000

1500

Poly Pitch [nm]

&IGURE4HEDEPENDENCEOF3XXONPOLYPITCH
,ESSDEPENDENCEISOBSERVEDWHENTHEPOLYPITCH
ISLARGE

&IGURE&AMMOS48AND3ENTAURUS0ROCESS
RESULTSOVERLAIDONTOTHESAMEGRIDINPREPARATION
FORDEVICESIMULATION

%AST-IDDLEFIELD2OAD-OUNTAIN6IEW#!53!

WWWSYNOPSYSCOM
3YNOPSYSANDTHE3YNOPSYSLOGOAREREGISTEREDTRADEMARKSOF3YNOPSYS)NC!LLOTHERPRODUCTSORSERVICE
NAMESMENTIONEDHEREINARETRADEMARKSOFTHEIRRESPECTIVEHOLDERSANDSHOULDBETREATEDASSUCH
3YNOPSYS)NC!LLRIGHTSRESERVED$'3