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Fermi level?
Fermi level expresses the probability of an electron occupying a
particular level at absolute T according to Fermi-Dirac statistics.
Fermi energy level is defined highest energy level below which all
energy levels are filled at 0 K
In a semiconductor the Fermi level is in the middle of the band gap
between the valence band and the conduction band.
The probability of electron occupancy is 50%
Fermi Level
Electrons in solid obey Fermi-Dirac statistics - must consider
electron, its wave nature and Pauli exclusion principle
Other statistics: Maxwell-Boltzmann for classical particles, BoseEinstein for photons
The distribution of electrons over a range of allowed energy levels
at thermal equilibrium is given as
f (E)
1
1 e
( E E F ) / kT
The distribution function. f(E) gives us the probability that states with energy E
are occupied
3
f ( EF )
( EF EF )
1e
f ( EF ) 1 1
11 2
kT
Thus an energy state at the Fermi level has a probability of 1/2 of being
occupied by an electron.
Example 1:
Determine the probability that an energy level 2kT above the Fermi level
is occupied by an electron at 300 K.
f(E)
T = 0K
With T = 0,
f (E) = 1/(1+0) = 1
when E < EF
T = T1
1/2
f (E) = 1/ (1 +) = 0
when E > EF.
At higher T (say, T1 > OK) some probability exists for states above
the Fermi level to be filled and probability
[1 - f(E)] that states below EF are empty.
Fermi level
For intrinsic material, concentration of holes in the valence band is
equal to the concentration of electrons in the conduction band.
EF lies in the middle of the band gap
The electron density in the CB and similarly the hole density in the VB
can be obtained if N(E) and f(E) are known
* 3/ 2
1/ 2
4
* N ( E ) 3 (2me ) ( E Ec )
h
f (E)
1
E EF
1exp(
)
kT
ni
N ( E ) f ( E )dE
c.b.
1
ni 43 (2me* )3 / 2 ( E Ec )1/ 2{
}dE
Ec h
E EF
1 exp(
)
kT
2m kT 32
Ec EF
ni 2{
} exp{
}
kT
h
*
e
2
10
Ec EF
ni N c exp{
}
kT
Where
2m kT 32
N c 2{
}
h
*
e
2
11
pi
N ( E )[1 f ( E )]dE
v .b.
Where
2mh* kT 32
EF EV
pi 2{
} exp{
}
2
h
kT
EF EV
pi N v exp{
}
kT
2mh* kT 32
N v 2{
}
2
h
12
ni pi
Ec EF
EF Ev
N c exp(
) N v exp(
)
kT
kT
N
Ec EF
EF Ev
exp{(
)(
)} v
kT
kT
N
c
Nv
1
Take log : {2 EF ( Ec Ev )} ln
Nc
kT
Nv
kT
E
c Ev
EF (
)
ln
Nc
2
2
13
Ec Ev kT N v
EFi
ln
2
2
Nc
Ec Ev 3
mh*
EFi
kT ln *
2
4
me
If me*= mh*, then the intrinsic Fermi level is exactly in the center of the band
gap
If me*> mh*, it is slightly below the center of the band gap (towards VB)
If mh*> me*, the intrinsic Fermi level is slightly above the center (towards CB)
For Si, Ge and many other semiconductor, the 3rd term is quite small, and EFi is
generally taken to be at the center of the band gap
For InSb, mh* 20me*, EFi shifted toward CB at 300 K
The density of states function is directly related to the carrier effective mass;
thus a larger effective mass means a larger density of stales function
14
Ec EF
no N c exp{
}
kT
Likewise, the equilibrium hole (po) concentration is
EF EV
po N v exp{
}
kT
15
no po ni2
( Ec E Fi
( E Fi Ev
n N c N v exp
exp
kT
kT
2
i
Eg
( Ec Ev )
N c N v exp
n N c N v exp
kT
kT
Eg
ni N c N v exp
2
kT
2
i
17
N d + + p 0 = N a - + n0
np = ni2
For n-type semiconductor,
n = p + Nd
(ND)
p = n + Na
(NA)
18
n p Nd ; n Nd
Remember
np n
2
i
ni2
n
ni2
Nd
p n Na Na
np n
2
i
ni2
p
ni2
Na
19
Ec EF
no N c exp{
}
kT
EF EV
po N v exp{
}
kT
np n
2
i
Ec Ev Eg
Ec
Eg
Ev
Ec Ev
n N c N v exp(
)
kT
Eg
2
ni N c N v exp(
)
kTmax
2
i
20
Tmax
Eg
1
2
( Nc Nv )
2k ln{
}
ni
For n-type semiconductor
where ni = Nd
Tmax
Eg
1
2
( Nc Nv )
2k ln{
}
Nd
21
1.5
Extrinsic region
full ionization
1.0
Intrinsic region
0.5
T (K)
100
400
800
23
Example 2:
Calculate the thermal equilibrium electron concentration in silicon at 300 K,
assuming the Fermi energy is 0.25 eV below the conduction band.
Given: Boltzmanns Constant, k = 1.38 x 10-23 J K-1 = 8.62 x 10-5 eV K-1
24
Example 3:
If a Si sample is doped with 1012 boron atoms per cm3, what is the carrier
concentration in the Si sample at 300K?
25
Text Books:
Reference Books: