SPB-2026Z Green Datasheet

SPB-2026Z
Product Description
0.7-2.2GHz 2W InGaP Amplifier
Sirenza Microdevices SPB-2026Z is a high linearity single-stage class

AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a
surface-mountable plastic encapsulated package. This HBT amplifier is
made with InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reliability.
Pb
This product is well suited for use as a driver stage in macro/micro-cell

infrastructure equipment or as the final output stage in pico-cell
infrastructure equipment. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of
matching at the board level. It features an input power detector, on/off
power control, ESD protection, excellent overall robustness and a hand
reworkable and thermally enhanced SOF-26 package. This product is
RoHS and WEEE compliant.
V c c = 5V
Functional Block Diagram

SZ
P-2026
SPB-2026
RoHS Compliant
& Green Package
SOF-26 Package
Product Features
P1dB = 33.8dBm @ 5V, 1960 MHz

ACP = -45dBc with 25 dBm Ch. Pwr. @ 1960 MHz
On-chip Input Power Detector
Low Thermal Resistance Package
Power up/down control < 1s
Robust Class 1C ESD
RFOUT
RFIN
Applications
A c tiv e
Bias
V bias = 5V
Pow er
Up/Dow n
Control
Pow er
Detec tor
Symbol
Parameters
Macro/Micro-Cell driver stage

Pico-Cell output stage
GSM, CDMA, TDSCDMA, WCDMA
Single and Multi-Carrier applications
Units
Frequency
Min.
Typ.
12.2
12.1
13.7
15.2
13.6
15.1
1842 MHz
S21
Small Signal Gain
dB
1960 MHz
2140 MHz
13.6
1842 MHz
P1dB
Output Power at 1 dB Compression
dBm
IM3
33.9
1960 MHz
2140 MHz
33.8
31.3
1842 MHz
Third Order Suppression

_22 dBm per tone, 1MHz spacing
dBc
1960 MHz
25 dBm
Channel
Power
W CDMA Channel Power tested

with 64 Channels FW D
23 dBm
25 dBm
23 dBm
25 dBm
dBc ACP
1842MHz
dBc ACP
1960MHz
dBc ACP
2140MHz
32.8
-49
-42
2140 MHz
23 dBm
-45
-48
-55
-45
-55
-45
-55
Input Return Loss
dB
1930-1990 MHz
11
14
S22
Output Return Loss
dB
1930-1990 MHz
12
NF
Noise Figure
dB
1960 MHz
Voltage Range for CW Pout=13dBm to 33dBm
ICQ
mA
IVPC
Power Up Control Current (Vpc = 5V)
mA
Ileak
Vcc Leakage Current (Vcc = 5V, Vpc = 0V)
R TH , j-l
Test Conditions:
Thermal Resistance (junction - lead)

Vcc = 5V
5.2
Quiescent Current (Vcc = 5V)
TL = 25C
6.2
0.85 to 1.4
380
445
500
2.1
100
C/W
ICQ = 445mA Typ.
-48
-45
S11
Vdet Range
Max.
12
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.

Broomfield, CO 80021
Phone: (800) SMI-MMIC

1
http://www.sirenza.com
EDS-105436 Rev E
SPB-2026Z 0.7-2.2 GHz 2W InGaP Amplifier
Absolute Maximum Ratings

Parameter
Absolute Limit
Max Device Current (ICE)
1500 mA
*Max Device Voltage (VCC)
7V
Power Dissipation
6W
Max. RF Input Power with 50 ohm output load
28 dBm
Max. RF Input Power with 10:1 VSWR output load

Max. RF Output Power with 50 ohm output load
(Continuous long term operation)
Max. Junction Temp. (TJ)
23 dBm
Operating Temp. Range (TL)
-40C to +85C
Max. Storage Temp.
+150C
30dBm
Simplified Device Schematic
+150C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
GND
VBIAS
RFIN
VPC
Bias
Bias Conditions should also satisfy the following expression:

IDVD < (TJ - TL) / RTH, j-l
*Note: No RF Drive
TL=TLEAD
Reliability & Qualification Information

Parameter
NC
RFOUT/
VCC
VDET
Rating
ESD Rating - Human Body Model (HBM)
Class 1C
Moisture Sensitivity Level
MSL1
This product qualification report can be downloaded at
GND
www.sirenza.com
Caution: ESD sensitive

Appropriate precautions in handling, packaging
and testing devices must be observed.
Pin Out Description

Pin #
Function
VBIAS
This is the supply voltage for the active bias circuit.
RFIN
This is the RF input pin and has a DC voltage present. An external DC block is required.
VPC
Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 1 by
more than 0.5V unless the supply current from pin 3 is limited < 10mA.
VDET
This is the output port for the power detector. It samples the power at the input of the amplifier.
Description
RFOUT/VCC This is the RF output pin and DC connection to the collector.
NC
GND
GND

Not connected
These pins are DC connected to the backside paddle. They provide good thermal connection to
the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are
required as shown in the recommended land pattern.
2
EDS-105436 Rev E
Typical RF Performance (1805 - 1880MHz Application Circuit)

Single Carrier ACP vs. Ch. Pwr. @1842MHz
Dual Carrier ACP vs. Ch. Pwr. @1842MHz
-20
-20
25C ______
-40C - - - - - 85C _ _ _
25C ______
-40C - - - - - 85C _ _ _
-30
-40
IM (dBc)
ACP (dBc)
-30
-50
-60
-40
-50
-60
WCDMA with 64 DPCH
Source ACPR
-70
14
16
18
20
22
24
26
14
Ch. Pwr. (dBm)
15
16
18
20
22
24
26
26
28
Ch. Pwr. (dBm)
IM3 vs. Freq. (22dBm Output Tones)
IM3 vs. Tone Power @1842MHz
-20
-20
25C
-30
-30
25C
-40C
85C
-40
IM3 (dBc)
IM3 (dBc)
Source ACPR
WCDMA with 64 DPCH and 5MHz spacing
-70
-50
-40C
-40
85C
-50
-60
-60
-70
-70
1.8
1.81
1.82
1.83
1.84
1.85
1.86
1.87
14
1.88
16
18
Frequency (GHz)
P1dB vs. Frequency
36
20
22
24
Pout per tone (dBm)
Pin vs. Pout @1842MHz

34
30
Pout (dBm)
P1dB (dBm)
34
32
30
25C
-40C
28
85C
26
22
25C
18
-40C
85C
14
26
10
1.8
1.81
1.82
1.83
1.84
1.85
1.86
1.87
1.88

10
12
14
16
18
20
22
24
Pin (dBm)
Frequency (GHz)
3
EDS-105436 Rev E

Vdetect vs. Pout @1842MHz
1.2
1.1
Vdetect (V)
NF (dB)
Noise Figure vs. Frequency

7
4
3
0.9
0.8
25C
-40C
25C
2
0.7
-40C
85C
1
1.8
1.81
1.82
1.83
1.84
1.85
1.86
1.87
85C
0.6
13
1.88
15
17
19
21
23
25
27
29
31
33
Pout (dBm)
Frequency (GHz)
S-Parameters over Temperature (1805 - 1880MHz Application Circuit)

|S21| over Temperature

0
20
-5
18
S21
-40C
S21 (dB)
S11 (dB)
-10
-15
-20
85C
16
14
S11
-40C
-25
12
85C
-30
10
1.8
1.81
1.82
1.83
1.84
1.85
1.86
1.87
1.88
1.8
1.81
1.82
Frequency (GHz)

S12
1.86
1.87
1.88
1.87
1.88
-40C
-10
85C
S22 (dB)
S12 (dB)
1.85
S22
-5
-40C
-10
1.84
0
-5
1.83
Frequency (GHz)
-15
-20
-25
85C
-15
-20
-25
-30
1.8
1.81
1.82
1.83
1.84
1.85
1.86
1.87
1.88
-30

1.8
1.81
1.82
1.83
1.84
1.85
1.86
Frequency (GHz)
Frequency (GHz)
4
EDS-105436 Rev E


-20
-20
25C ______
-40C - - - - - 85C _ _ _
-30
-40
IM (dBc)
ACP (dBc)
-30
25C ______
-40C - - - - - 85C _ _ _
-50
-60
-40
-50
-60
Source ACPR
WCDMA with 64 DPCH
-70
-70
14
16
18
20
22
24
26
14
15
16
18
Ch. Pwr. (dBm)
20
22
24
26
26
28
Ch. Pwr. (dBm)
-20
-20
-30
-30
-40
-40
IM3 (dBc)
IM3 (dBc)
Source ACPR
-50
-50
25C
-60
25C
-40C
-60
-40C
85C
85C
-70
1.93
1.94
1.95
1.96
1.97
1.98
-70
1.99
14
16
18
Frequency (GHz)
P1dB vs. Frequency
36
20
22
24
Pout per tone (dBm)

34
34
Pout (dBm)
P1dB (dBm)
30
32
30
25C
-40C
28
26
1.93
85C
26
22
25C
18
-40C
85C
14
10
1.94
1.95
1.96
1.97
1.98
1.99

10
12
14
16
18
20
22
24
Pin (dBm)
Frequency (GHz)
5
EDS-105436 Rev E

1.2
1.1
Vdetect (V)
NF (dB)

7
4
25C
-40C
85C
0.9
0.8
25C
-40C
0.7
2
1
1.93
85C
0.6
1.94
1.95
1.96
1.97
1.98
13
1.99
15
17
19
21
23
25
27
29
31
33
Pout (dBm)
Frequency (GHz)


20
0
S11
-5
18
-40C
85C
S21 (dB)
S11 (dB)
-10
-15
-20
16
S21
-40C
85C
14
12
-25
-30
1.93
1.94
1.95
1.96
1.97
1.98
10
1.93
1.99
1.94
1.95
Frequency (GHz)
1.96
1.97
1.98
1.99
1.98
1.99
Frequency (GHz)
S22
S12
-5
-5
-10
-10
85C
S22 (dB)
S12 (dB)
-40C
-15
-20
-25
-30
1.93
-40C
85C
-15
-20
-25
1.94
1.95
1.96
1.97
1.98
1.99
-30
1.93

1.94
1.95
1.96
1.97
Frequency (GHz)
Frequency (GHz)
6
EDS-105436 Rev E

-20
-20
25C ______
-40C - - - - - 85C _ _ _
-30
-40
IM (dBc)
ACP (dBc)
-30
25C ______
-40C - - - - - 85C _ _ _
-50
-60
-40
-50
-60
Source ACPR
Source ACPR
WCDMA with 64 DPCH
-70
-70
14
16
18
20
22
24
26
14
15
16
18
Ch. Pwr. (dBm)
20
22
24
26
26
28
Ch. Pwr. (dBm)
-20
-20
-30
-30
25C
-40C
-40
IM3 (dBc)
IM3 (dBc)
85C
-50
-40
-50
25C
-60
-60
-40C
85C
-70
2.11
2.12
2.13
2.14
2.15
2.16
-70
2.17
14
16
18
Frequency (GHz)
P1dB vs. Frequency
36
20
22
24
Pout per tone (dBm)

34
34
Pout (dBm)
P1dB (dBm)
30
32
30
25C
-40C
28
26
2.11
85C
26
22
25C
18
-40C
85C
14
10
2.12
2.13
2.14
2.15
2.16
2.17
Frequency (GHz)
10
12
14
16
18
20
22
24
Pin (dBm)
7
EDS-105436 Rev E

1.2
1.1
5.5
Vdetect (V)
NF (dB)

6.5
25C
-40C
4.5
85C
0.9
0.8
25C
-40C
0.7
4
3.5
2.11
85C
0.6
2.12
2.13
2.14
2.15
2.16
13
2.17
15
17
19
21
23
25
27
29
31
33
Pout (dBm)
Frequency (GHz)


20
S21
-5
S11
-40C
-10
-40C
85C
85C
S21 (dB)
S11 (dB)
18
-15
-20
16
14
12
-25
-30
2.11
2.12
2.13
2.14
2.15
2.16
10
2.11
2.17
2.12
2.13
Frequency (GHz)

S12
2.16
2.17
-40C
-10
85C
S22 (dB)
S12 (dB)
2.17
S22
-5
-40C
-15
-20
-25
-30
2.11
2.16
-10
2.15
Frequency (GHz)
0
-5
2.14
85C
-15
-20
-25
2.12
2.13
2.14
2.15
2.16
2.17
-30
2.11
Frequency (GHz)
2.12
2.13
2.14
2.15
Frequency (GHz)
8
EDS-105436 Rev E
1805 - 1880MHz Application Circuit (Vcc & Vpc = 5.0V)

Vcc
Note: Electrical Lengths referenced to center of Shunt

components and cuts on traces
Er=3.9
2oz copper
GETEK ML200D 10mils
TanD=.0089
Frequency=1842MHz
Zo=14.7
C1
1uF
C3
0.1uF
E=8.9
R2
0
Reference Plane
for Electrical Lengths
@ end of lead
Zo=14.7
C2
15pF
E=11.1
C4
0.1uF
RF
IN
C5
Bias
Zo=27.7
Zo=30.5
Zo=30.5
Zo=21.7
E=4.1
E=5.7
E=12.6
E=2.0
15pF
L1
27nH
6
Zo=20
Zo=14.8
Zo=14.8
Zo=24.3
Zo=27.7
E=3.2
E=4.6
E=4.2
E=4.0
E=10.7
E=4.4
4
SPB-2026Z
C6
3.9pF
Zo=27.7
C8
RF
OUT
15pF
C7
3.3pF
VDET
R1
1.02K 1%
C9
.1uF
R4*
47K
R3
4.02K 1%
* R4 simulates external circuit loadingto ground.

Recommended load range is 10K-100K range
may be removed if VDETECT is not used
VPC
1805 - 1880MHz Evaluation Board Layout (Vcc & Vpc = 5.0V)

Board material GETEK, 10mil thick, Er=3.9, 2 oz. copper
R2
Trim
C1
C3
C4
C2
C6
L1
Trim
C8
C7
C5
C9
R3
R1
R4


9
EDS-105436 Rev E

Vcc
Note: Electrical Lengths referenced to center

of Shunt components and cuts on traces
Er=3.9
2oz copper
GETEK ML200D 10mils
TanD=.0089
Frequency=1960MHz
Zo=14.7
C1
1uF
C3
0.1uF
E=9.4
R2
0
Reference Plane
@ end of lead
Zo=14.7
C2
5.6pF
E=10.8
C4
0.1uF
RF
IN
L1
20nH
C5
Bias
Zo=27.7
Zo=30.5
Zo=30.5
Zo=21.7
E=4.4
E=12.4
E=7.0
E=2.2
6
5
10pF
Zo=20
Zo=14.8
Zo=14.8
Zo=24.3
Zo=27.7
Zo=27.7
E=3.4
E=5.0
E=4.5
E=4.3
E=11.4
E=4.7
C8
RF
OUT
10pF
SPB-2026Z
C6
3.9pF
C7
2.4pF
VDET
R1
1.02K 1%
C9
.1uF
R4*
47K
R3
4.02K 1%

VPC

R2
Trim
C1
C3
C4
L1
C6
Trim
C2
C8
C7
C5
C9
R3
R1
R4


10
EDS-105436 Rev E

Vcc
C1
1uF
Note: Electrical Lengths referenced to center

of Shunt components and cuts on traces
Er=3.9
2oz copper
GETEK ML200D 10mils
TanD=.0089
Frequency=2140MHz
Zo=14.7
C3
0.1uF
E=10.3
R2
0
Reference Plane
@ end of lead
Zo=14.7
C2
5.6pF
E=11.8
C4
0.1uF
RF
IN
L1
20nH
C5
Bias
Zo=27.7
Zo=30.5
Zo=30.5
Zo=21.7
E=4.8
E=17.1
E=4.1
E=2.4
6
5
10pF
Zo=20
Zo=14.8
Zo=14.8
Zo=24.3
Zo=27.7
Zo=27.7
E=3.7
E=6.5
E=4.9
E=4.7
E=11.4
E=6.2
4
SPB-2026Z
C6
3.3pF
C8
RF
OUT
10pF
C7
2.2pF
VDET
R1
1.02K 1%
C9
.1uF
R4*
47K
R3
4.02K 1%

VPC

R2
Trim
C1
C3
C4
C2
C6
L1
Trim
C8
C7
C5
C9
R3
R1
R4


11
EDS-105436 Rev E
Suggested PCB Pad Layout
Part Number Ordering Information
Dimensions in mm [inches]
P a rt / E v a lu a tio n B o a rd O rd e rin g In fo rm a tio n

P a rt N u m b e r
D e s c rip tio n
R eel
S iz e
R eel
Q u a n tity
S P B -2 0 2 6 Z
L e a d F re e , Ro Hs C o m p lia nt
7"
1000
S P B -2 0 2 6 Z-E V B 1
1 8 0 5 -1 8 8 0 M Hz E va lua tio n B o a rd
N/A
N/A
S P B -2 0 2 6 Z-E V B 2
1 9 3 0 -1 9 9 0 M Hz E va lua tio n B o a rd
N/A
N/A
S P B -2 0 2 6 Z-E V B 3
2 11 0 -2 1 7 0 M Hz E va lua tio n B o a rd
N/A
N/A
SOF-26 Package
Nominal Package Dimensions

Dimensions in millimeters (inches)
Refer to package drawing posted at www.sirenza.com for tolerances


12
EDS-105436 Rev E

SPB-2026Z Green Datasheet

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SPB-2026Z

0.7-2.2GHz 2W InGaP Amplifier

Sirenza Microdevices SPB-2026Z is a high linearity single-stage class

This product is well suited for use as a driver stage in macro/micro-cell

Functional Block Diagram

P1dB = 33.8dBm @ 5V, 1960 MHz

Macro/Micro-Cell driver stage

Small Signal Gain

Output Power at 1 dB Compression

Third Order Suppression

W CDMA Channel Power tested

Input Return Loss

Output Return Loss

Voltage Range for CW Pout=13dBm to 33dBm

Power Up Control Current (Vpc = 5V)

Vcc Leakage Current (Vcc = 5V, Vpc = 0V)

Thermal Resistance (junction - lead)

Quiescent Current (Vcc = 5V)

ICQ = 445mA Typ.

303 S. Technology Ct.

Phone: (800) SMI-MMIC

SPB-2026Z 0.7-2.2 GHz 2W InGaP Amplifier

Absolute Maximum Ratings

Max Device Current (ICE)

*Max Device Voltage (VCC)

Max. RF Input Power with 50 ohm output load

Max. RF Input Power with 10:1 VSWR output load

Operating Temp. Range (TL)

Max. Storage Temp.

Simplified Device Schematic

Bias Conditions should also satisfy the following expression:

Reliability & Qualification Information

ESD Rating - Human Body Model (HBM)

Moisture Sensitivity Level

This product qualification report can be downloaded at

Caution: ESD sensitive

Pin Out Description

This is the supply voltage for the active bias circuit.

RFOUT/VCC This is the RF output pin and DC connection to the collector.

303 S. Technology Ct.

SPB-2026Z 0.7-2.2 GHz 2W InGaP Amplifier

Typical RF Performance (1805 - 1880MHz Application Circuit)

Dual Carrier ACP vs. Ch. Pwr. @1842MHz

WCDMA with 64 DPCH

Ch. Pwr. (dBm)

Ch. Pwr. (dBm)

IM3 vs. Freq. (22dBm Output Tones)

IM3 vs. Tone Power @1842MHz

WCDMA with 64 DPCH and 5MHz spacing

P1dB vs. Frequency

Pout per tone (dBm)

Pin vs. Pout @1842MHz

303 S. Technology Ct.

SPB-2026Z 0.7-2.2 GHz 2W InGaP Amplifier

Typical RF Performance (1805 - 1880MHz Application Circuit)

Noise Figure vs. Frequency

S-Parameters over Temperature (1805 - 1880MHz Application Circuit)

|S11| over Temperature

|S12| over Temperature

|S22| over Temperature

303 S. Technology Ct.

SPB-2026Z 0.7-2.2 GHz 2W InGaP Amplifier

Typical RF Performance (1930 - 1990MHz Application Circuit)

Dual Carrier ACP vs. Ch. Pwr. @1960MHz