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Photovoltaics have the potential to become a major contributor to future sustainable energy generation. To
this end, device efficiency needs to be brought beyond present physical limits. Solar cells cannot absorb
light with less energy than the bandgap (absorption threshold of the photovoltaic absorber material), and
consequently this energy source is usually uncaptured. Upconversion (UC) devices harvest those unused
subthreshold photons behind the solar cell, create one higher-energy photon out of (at least) two
transmitted photons, and radiate upconverted light back toward the solar cell, thus expanding the usable
solar spectrum (see Figure 1). Key requirements for UC units are broad absorption and high UC quantum
yield under even the low-intensity incoherent illumination that is available to solar energy conversion
devices.
Figure 1. Principle of a solar cell assisted by upconversion (UC). The creation of usable electron-hole
pairs in the photovoltaic absorber material (left) is augmented by light, usually transmitted unused, which
is converted to higher photon energies in the UC unit (right).
Upconversion was proposed as a means to increase solar cell efficiency about a decade ago, 1 and
research has since then been primarily focused on UC processes occurring in lanthanide-doped glasses
or nanoparticles.2 Although transitions between the rare earth 4f orbitals lie in an energy range promising
for combination with common crystalline silicon solar cells, UC systems based on erbium (Er) or ytterbium
(Yb) suffer from weak absorption by Laporte-forbidden transitions, a narrow absorption bandwidth, and
the resulting low efficiency. Recently, triplet-triplet annihilation (TTA) in organic molecules has been
demonstrated to be an alternative UC mechanism highly promising for solar energy application. 3 It
proceeds efficiently even for low photon flux and displays highly tunable absorption characteristics.
The key to high quantum yield from TTA-UC lies in the combination of two different classes of organic
molecules dissolved together in organic solvents or in a polymeric host matrix. 4 A so-called sensitizer
species, which in many cases is a metalated porphyrin, absorbs a low-energy photon (process 1 in Figure
2) and undergoes fast intersystem crossing (ISC, process 2), whereby the spin of the exciton changes
from 0 (singlet, electron and hole spin cancel) to 1 (triplet, electron and hole spin add). This change of
spin state is facilitated by the heavy metal in the porphyrin center. The resulting triplet state cannot
radiatively relax back to the ground state and is therefore long-lived. Interaction with a second class of
molecule transfers the triplet energy to the so-called emitter species by triplet energy transfer (TET,
process 3). Successive interaction of two emitters yields TTA (process 4), which combines the two triplet
excitons to create one higher-energy singlet state. The singlet state quickly relaxes back to the ground
state under efficient emission of a high-energy photon (process 5).
using 130nm-thick hydrogenated a-Si (a-Si:H) cells. This preliminary result already beats the state of the
art for a-Si:H cells augmented by rare-earth UC by a factor of about 200. 10 Combining the UC unit with a
back-reflecting surface helps to multi-pass the incident light as well as to out-couple the upconverted light,
and led to a consecutive increase of the FOM7 by another factor of 3 to about 23104mA/cm2. Roughly
the same level of photocurrent enhancement could be obtained for organic bulk heterojunction solar cells 8
as well as for dye-sensitized solar cells with a fully device-integrated UC unit. 9 The latter result was
measured under illumination conditions very similar to device operation, reaching concentration factors as
low as 3 suns. Our current record FOM stands at 7.610 4mA/cm2, obtained with an a-Si:H solar cell
optimized for low parasitic absorption.8
In summary, we have shown cumulative FOM improvements of roughly three orders of magnitude
compared with lanthanide-based UC and a first move toward device-integrated UC units. However, the
photocurrent increase under 1 sun achieved to date is still far from commercially relevant. We are
therefore now working to increase the UC yield under low-illumination conditions. We are following two
strategies in parallel and have recently obtained initial, promising results. First, we are increasing the dye
concentration by tethering the UC-active molecules onto nanosized support structures to increase the
steady-state triplet density and therefore the UC yield.11 Second, we are focusing the incident light locally
in the UC layer using micro-optical structures such as parabolic back-reflectors. 12 In combination, these
strategies will enable us to exploit near-field optical effects such as plasmonic resonances or wave-guide
modes once characteristic absorption lengths in the 10100nm range have been reached, which should
make further increases in the UC yield possible. We are confident that TTA-UC will contribute significant
photocurrent to high-gap solar cells and photoelectrochemical devices for fuel production in the near
future.
T. F. S. acknowledges a Feodor-Lynen fellowship from the Alexander von Humboldt Foundation. T. W. S.
acknowledges Australian Research Council funding FT130100177, DP110103300, and project funding
from the Australian Renewable Energy Agency.
References:
1. T. Trupke, M. A. Green, P. Wrfel, Improving solar cell efficiencies by up-conversion of sub-band-gap light, J. Appl. Phys. 92, p. 4117-4122,
2002.
2. M. Haase, H. Schfer, Upconverting nanoparticles, Angew. Chem. Int'l Ed. 50(26), p. 5808-5829, 2011.
3. S. Baluschev, T. Miteva, V. Yakutkin, G. Nelles, A. Yasuda, G. Wegner, Up-conversion fluorescence: noncoherent excitation by sunlight,
Phys. Rev. Lett. 97, p. 143903, 2006.
4. Y. C. Simon, C. Weder, Low-power photon upconversion through triplet-triplet annihilation in polymers, J. Mater. Chem. 22, p. 20817, 2012.
5. T. Khoury, M. J. Crossley, A strategy for the stepwise ring annulation of all four pyrrolic rings of a porphyrin, Chem. Commun. 46, p. 48514853, 2007.
6. Y. Y. Cheng, B. Fckel, R. W. MacQueen, T. Khoury, R. G. C. R. Clady, T. F. Schulze, N. J. Ekins-Daukes, et al., Improving the lightharvesting of amorphous silicon solar cells with photochemical upconversion, Energy Environ. Sci. 5, p. 6953-6959, 2012.
7. T. F. Schulze, Y. Y. Cheng, B. Fckel, R. W. MacQueen, A. Danos, N. J. L. K. Davis, M. J. Y. Tayebjee, et al., Photochemical upconversion
enhanced solar cells: effect of a back reflector, Aust. J. Chem. 65, p. 480-485, 2012.
8. T. F. Schulze, J. Czolk, Y.-Y. Cheng, B. Fckel, R. W. MacQueen, T. Khoury, M. J. Crossley, et al., Efficiency enhancement of organic and
thin-film silicon solar cells with photochemical upconversion, J. Phys. Chem. C 116(43), p. 22794-22801, 2012.
9. A. Nattestad, Y. Y. Cheng, R. W. MacQueen, T. F. Schulze, F. W. Thompson, A. J. Mozer, B. Fckel, et al., Dye-sensitized solar cell with
integrated triplet-triplet annihilation upconversion system, J. Phys. Chem. Lett. 4, p. 2073-2078, 2013.
10. J. de Wild, J. K. Rath, A. Meijerink, W. G. J. H. M. van Sark, R. E. I. Schropp, Enhanced near-infrared response of a-Si:H solar cells with
-NaYF4:Yb3+ (18%), Er3+ (2%) upconversion phosphors, Sol. Energy Mater. Sol. Cells 94, p. 2395-2398, 2010.
11. R. W. MacQueen, T. F. Schulze, T. Khoury, Y. Y. Cheng, B. Stannowski, K. Lips, M. J. Crossley, T. Schmidt, Nanostructured upconverters
for improved solar cell performance, Proc. SPIE 8824, p. 882408, 2013. doi:10.1117/12.2026907
12. T. F. Schulze, Y. Y. Cheng, T. Khoury, M. J. Crossley, B. Stannowski, K. Lips, T. W. Schmidt, Micro-optical design of photochemical
upconverters for thin-film solar cells, J. Photon. Energy 3(1), p. 034598, 2013.
UV (<400 nm)
Figure 2.1 shows the solar irradiance outside the earth's atmosphere, denoted byAM0, and at sea level,
denoted byAM1.5.
Figure 2.1 The solar spectrum. Hence the temperature for the black body, which is 5523 K in this case.
As the solar radiation passes the atmosphere, a part of the incident energy is removed by absorption or
scattering by molecules, clouds and aerosols. Wavelengths less than 300 nm is filtered out by molecules
like ozone, nitrogen and oxygen. Dips in the infrared area are caused by water and CO 2.
Did you know...
...that Earth receives more energy from the Sun in just one hour than the world uses in a whole year?
If the surface temperature on a black body is the same everywhere, the spectral photon flux normal to
the surface is
(2.1)
Fs is a geometrical factor, and is equal to just at the surface of the black body. Away from the
surface, the angular range is reduced and
(2.2)
On the earth Fs is reduced by a factor of 4.6 104, to 2.16 10-5 .
The total emitted power density is
(2.3)
where s is Stefan's constant:
At the sun's surface this power density is 62 MW/m2, and at a point just outside the atmosphere the
power density has shrunk to 1353 W/m2 because of the reduced angular range of the sun.
where N is the number of promoted electrons, and is the difference in potential energy between
excited and ground state population.
In equilibrium, is zero. Thus, a ground state that is full initially and an excited state that is empty,
would give the best outcome in extraction of energy. This is one of many reasons why semiconductors
are beneficial among all the selections of materials.
You might think that solar cells cope well with increased temperature since they in fact are solar cells.
But the truth is that increased temperature can decrease the efficiency of photovoltaic conversion.
The most significant is the temperature dependence of the voltage which decreases with increasing
temperature. The temperature variation of the current or the fill factor are less pronounced. The
voltage decrease of a silicon cell is typiclly 2.3mV per C. Thus they are designed to be in good thermal
contact with the ambient.
Figure 2.3: This is an illustration on how the voltage will decrease with increasing temperature of the
cell.
2.3.1 In equilibrium
Consider a cell in the dark and in thermal equilibrium with the ambient, which radiates like a black
body, then the equivalent current density absorbed from the ambient is
(2.4)
where a(E) is the probability of absorption, the absorptivity, of a photon of energy E, and R(E) is the
probability of photon reflection.
Let us take a look at some collectors of area A:
If the rear surface of the cell is in contact with air, the total equivalent current is
If the rear surface of a cell is in contact with a material of higher refractive index, n s, the total
equivalent current is
If the rear surface acts as a perfect reflector (capable of reflecting thermal photons), the
totalt equivalent current for absorbed thermal photons is
2.3.2 Illumination
The equivalent current density for photon absorption under illumination is given by
(2.6)
Under illumination the system develops a chemical potential, > 0. This results in increased
spontanious emission as more excited electrons causes more relaxation events. The photon flux
emitted normal to the surface
(2.7)
where
(2.8)
n0 is the refractive index of the ambient. If again is the probability of photon emission, the equivalent
current density for photon emission is
(2.9)
The net equivalent current density is then
(2.1
0)
(2.11)
Notice that thephotocurrent is a function only of the band gap and the incident spectrum. The lower E g
is, the greater Jsc will be.
Current that flows through the photovoltaic device when a bias voltage is applied in the dark is called
dark current. The output current J(V) is equal to the difference between the light-generated current
Jsc, and the diode current Jdark(V).
As V increases (larger Eg), the emitted flux, which is concentrated on photon energies near E g, will
increase and thus result in a decrease of the net current. Note that, under open circuit, when J(V) = 0,
all the light-generated current passes through the diode. Under short circuit (V = 0), all this current
passes through the external load. The upper limit on the voltage is V = Eg/q. This means that Voc must
always be less than this in order to avoid being a light emitting device.
(2.12)
and with maximum efficiency when
(2.13)
Limiting efficiency for a single band gap solar cell inAM 1.5
Figure 2.4:
crystalline Si
1.12
amorphous Si
~1.75
CdTe
1.45
GaAs
1.42
CdS
2.4
The spectrum of a 5760 K black body shows a limiting efficiency around 31% at an Eg about 1.3eV
outside the Earth's atmosphere (AM0). By reducing the temperature of the radient source (more
reddish), the optimal energy gap and efficiency decrease. Similarly, by increasing the temperature of
the source, optimal energy gap and efficiency both increases. In the case where T a (ambient
temperature) is zero and the black body temperature is 6000K, the optimum V is Eg/q, which gives a
maximum efficiency around 44% at a band gap of 2.2eV.
Another way of improving the effiency through the spectrum is by concentrating the light, so that
absorbed flux will increase relative to the emitted flux. For light concentrated by a factor of 1000, a
limiting effiency around 37% at Eg about 1.1eV is predicted. And as for a concentration up to 4.6 104
(the maximum),is over 40%. But these estimates ignore the fact that under high concentration the
cell will be heated, and emit more strongly.
To a good approximation, the Sun acts as a perfect emitter of radiation at a temperature close to 5800
K, and thus considered as a black body. The Sun emits electromagnetic light in various wavelengths:
UV (<400 nm)
Figure 2.1 shows the solar irradiance outside the earth's atmosphere, denoted byAM0, and at sea level,
denoted byAM1.5.
Figure 2.1 The solar spectrum. Hence the temperature for the black body, which is 5523 K in this case.
As the solar radiation passes the atmosphere, a part of the incident energy is removed by absorption or
scattering by molecules, clouds and aerosols. Wavelengths less than 300 nm is filtered out by molecules
like ozone, nitrogen and oxygen. Dips in the infrared area are caused by water and CO 2.
Did you know...
...that Earth receives more energy from the Sun in just one hour than the world uses in a whole year?
If the surface temperature on a black body is the same everywhere, the spectral photon flux normal to
the surface is
(2.1)
Fs is a geometrical factor, and is equal to just at the surface of the black body. Away from the
surface, the angular range is reduced and
(2.2)
On the earth Fs is reduced by a factor of 4.6 104, to 2.16 10-5 .
The total emitted power density is
(2.3)
where s is Stefan's constant:
At the sun's surface this power density is 62 MW/m2, and at a point just outside the atmosphere the
power density has shrunk to 1353 W/m2 because of the reduced angular range of the sun.
where N is the number of promoted electrons, and is the difference in potential energy between
excited and ground state population.
In equilibrium, is zero. Thus, a ground state that is full initially and an excited state that is empty,
would give the best outcome in extraction of energy. This is one of many reasons why semiconductors
are beneficial among all the selections of materials.
You might think that solar cells cope well with increased temperature since they in fact are solar cells.
But the truth is that increased temperature can decrease the efficiency of photovoltaic conversion.
The most significant is the temperature dependence of the voltage which decreases with increasing
temperature. The temperature variation of the current or the fill factor are less pronounced. The
voltage decrease of a silicon cell is typiclly 2.3mV per C. Thus they are designed to be in good thermal
contact with the ambient.
Figure 2.3: This is an illustration on how the voltage will decrease with increasing temperature of the
cell.