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SEMiX303GD12E4c

Absolute Maximum Ratings


Symbol

Conditions

Values

Unit

IGBT
VCES
IC

Tj = 175 C

1200

Tc = 25 C

466

Tc = 80 C

359

300

ICnom
ICRM

SEMiX 33c
Trench IGBT Modules

ICRM = 3xICnom

900

-20 ... 20

10

-40 ... 175

Tc = 25 C

338

Tc = 80 C

252

300

VGES
tpsc

VCC = 800 V
VGE 20 V
VCES 1200 V

Tj = 150 C

Tj
Inverse diode
IF

SEMiX303GD12E4c

Tj = 175 C

IFnom

Features
Homogeneous Si
Trench = Trenchgate technology
VCE(sat) with positive temperature
coefficient
High short circuit capability
UL recognised file no. E63532

IFRM

IFRM = 3xIFnom

900

IFSM

tp = 10 ms, sin 180, Tj = 25 C

1485

-40 ... 175

Tj
Module
It(RMS)
Tstg
Visol

AC sinus 50Hz, t = 1 min

600

-40 ... 125

4000

Typical Applications*
AC inverter drives
UPS
Electronic Welding

Characteristics
Symbol

Conditions

min.

typ.

max.

Unit

Tj = 25 C

1.8

2.05

Tj = 150 C

2.2

2.4

VCE0

Tj = 25 C

0.8

0.9

Tj = 150 C

0.7

0.8

rCE

Tj = 25 C

3.3

3.8

5.0

5.3

5.8

6.5

0.1

0.3

mA

IGBT

Remarks
Case temperature limited to TC=125C
max.
Product reliability results are valid for
Tj=150C

VCE(sat)

IC = 100 A
VGE = 15 V
chiplevel

VGE = 15 V

Tj = 150 C

VGE(th)

VGE=VCE, IC = 11.4 mA

ICES

VGE = 0 V
VCE = 1200 V

Cies
Coes
Cres

VCE = 25 V
VGE = 0 V

QG

VGE = - 8 V...+ 15 V

RGint

Tj = 25 C

td(on)
tr
Eon

VCC = 600 V
IC = 300 A

Tj = 25 C
Tj = 150 C

18.5

nF

f = 1 MHz

1.22

nF

f = 1 MHz

Tj = 150 C

1.03

nF

1695

nC

2.50

213

ns

Tj = 150 C

60

ns

Tj = 150 C

29.4

mJ

535

ns

113

ns

Eoff
Rth(j-c)

per IGBT

tf

mA

f = 1 MHz

RG on = 1.8
Tj = 150 C
RG off = 1.8
di/dton = 4840 A/s Tj = 150 C
di/dtoff = 2980 A/s Tj = 150 C

td(off)

41.8

mJ
0.095

K/W

GD
by SEMIKRON

Rev. 4 16.12.2009

SEMiX303GD12E4c
Characteristics
Symbol

Conditions

Inverse diode
VF = VEC IF = 300 A
VGE = 0 V
chip
VF0
rF

SEMiX 33c

IRRM
Qrr

Trench IGBT Modules

Err
Rth(j-c)

SEMiX303GD12E4c

Homogeneous Si
Trench = Trenchgate technology
VCE(sat) with positive temperature
coefficient
High short circuit capability
UL recognised file no. E63532

Typical Applications*
AC inverter drives
UPS
Electronic Welding

Tj = 25 C
Tj = 150 C

typ.

max.

Unit

2.2

2.52

2.2

2.5

Tj = 25 C

1.1

1.3

1.5

Tj = 150 C

0.7

0.9

1.1

Tj = 25 C

2.7

3.0

3.4

4.2

4.6

Tj = 150 C
IF = 300 A
Tj = 150 C
di/dtoff = 5200 A/s T = 150 C
j
VGE = -15 V
T
j = 150 C
VCC = 600 V
per diode

3.5

300

50

22.9

mJ
0.18

K/W

Module
LCE
RCC'+EE'

Features

min.

res., terminal-chip

Rth(c-s)

per module

Ms

to heat sink (M5)

20

nH

TC = 25 C

0.7

TC = 125 C

0.014
to terminals (M6)

Mt

K/W

Nm

2.5

Nm
Nm

900

Temperatur Sensor
R100

Tc=100C (R25=5 k)

B100/125

R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];

493 5%

3550
2%

Remarks
Case temperature limited to TC=125C
max.
Product reliability results are valid for
Tj=150C

GD
2

Rev. 4 16.12.2009

by SEMIKRON

SEMiX303GD12E4c

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'

Fig. 2: Rated current vs. temperature IC = f (TC)

Fig. 3: Typ. turn-on /-off energy = f (IC)

Fig. 4: Typ. turn-on /-off energy = f (RG)

Fig. 5: Typ. transfer characteristic

Fig. 6: Typ. gate charge characteristic

by SEMIKRON

Rev. 4 16.12.2009

SEMiX303GD12E4c

Fig. 7: Typ. switching times vs. IC

Fig. 8: Typ. switching times vs. gate resistor RG

Fig. 9: Typ. transient thermal impedance

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'

Fig. 11: Typ. CAL diode peak reverse recovery current

Fig. 12: Typ. CAL diode recovery charge

Rev. 4 16.12.2009

by SEMIKRON

SEMiX303GD12E4c

SEMiX 33c

pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.

by SEMIKRON

Rev. 4 16.12.2009