Escolar Documentos
Profissional Documentos
Cultura Documentos
DATA SHEET
PDZ-B series
Voltage regulator diodes
Product data sheet
Supersedes data of 2002 Feb 18
2004 Mar 22
NXP Semiconductors
PDZ-B series
FEATURES
PINNING
;;
PIN
1
2
handbook, halfpage
cathode
anode
APPLICATIONS
DESCRIPTION
Top view
MAM387
DESCRIPTION
Fig.1
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
PDZ2.4B
Z0
PDZ5.1B
Z8
PDZ11B
ZG
PDZ24B
ZQ
PDZ2.7B
Z1
PDZ5.6B
Z9
PDZ12B
ZH
PDZ27B
ZR
PDZ3.0B
Z2
PDZ6.2B
ZA
PDZ13B
ZJ
PDZ30B
ZS
PDZ3.3B
Z3
PDZ6.8B
ZB
PDZ15B
ZK
PDZ33B
ZT
PDZ3.6B
Z4
PDZ7.5B
ZC
PDZ16B
ZL
PDZ36B
ZU
PDZ3.9B
Z5
PDZ8.2B
ZD
PDZ18B
ZM
PDZ4.3B
Z6
PDZ9.1B
ZE
PDZ20B
ZN
PDZ4.7B
Z7
PDZ10B
ZF
PDZ22B
ZP
ORDERING INFORMATION
TYPE
NUMBER
PDZ2.4B to
PDZ36B
2004 Mar 22
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
NXP Semiconductors
PDZ-B series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
IF
IZSM
Ptot
Tamb = 25 C; note 1;
see Fig.2
Tstg
Tj
UNIT
200
mA
see Table 2
400
mW
storage temperature
65
+150
junction temperature
150
Note
1. Device mounted on a printed-circuit board measuring 11 25 1.6 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-s)
Rth(j-a)
note 1
Note
1. Device mounted on a printed-circuit board measuring 11 25 1.6 mm.
2004 Mar 22
VALUE
UNIT
130
K/W
340
K/W
NXP Semiconductors
PDZ-B series
CHARACTERISTICS
Table 1 Total series
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
2004 Mar 22
CONDITIONS
MAX.
UNIT
0.9
1.1
V
V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1.5 V
VR = 2.5 V
VR = 3 V
VR = 3.5 V
VR = 4 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 9 V
VR = 10 V
VR = 11 V
VR = 12 V
VR = 13 V
VR = 15 V
VR = 17 V
VR = 19 V
VR = 21 V
VR = 23 V
VR = 25 V
VR = 27 V
50
20
10
5
5
3
3
2
2
1
500
500
500
500
500
100
100
100
100
50
50
50
50
50
50
50
50
50
50
A
A
A
A
A
A
A
A
A
A
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
TEMP. COEFF.
SZ (mV/K)
at IZ = 5 mA
(see Figs 4 and 5)
DIODE CAP.
Cd (pF) at
f = 1 MHz;
VR = 0
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 s;
Tamb = 25 C
MAX.
MAX.
at IZ
(mA)
MAX.
at IZ
(mA)
TYP.
MAX.
MAX.
2.43
2.69
2.85
3.32
3.60
3.89
4.17
4.55
4.96
5.48
6.06
6.65
7.28
8.02
8.85
9.77
10.78
11.74
12.91
14.34
15.85
17.56
19.52
21.54
23.72
26.19
29.19
32.15
35.07
2.63
2.91
3.07
3.53
3.85
4.16
4.48
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
10.21
11.22
12.24
13.49
14.98
16.51
18.35
20.39
22.47
24.78
27.53
30.69
33.79
36.87
1 000
1 000
1 000
1 000
500
500
600
600
250
100
80
60
60
60
60
60
60
80
80
80
80
80
100
100
120
150
200
250
300
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
100
100
95
95
90
90
90
90
60
50
50
40
10
10
10
10
10
10
10
15
20
20
20
25
30
40
40
40
60
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1.6
2.0
2.1
2.4
2.4
2.5
2.5
1.4
0.3
1.9
2.7
3.4
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
23.4
26.6
29.7
33.0
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
97
93
88
84
80
73
66
60
59
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
5.5
5.5
5.5
5.5
3.5
3.5
3.5
3.5
3.0
3.0
2.5
2.0
1.5
1.5
1.5
1.3
1.3
1.0
1.0
0.9
0.8
MIN.
PDZ-B series
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
DIFFERENTIAL RESISTANCE
rdif ()
NXP Semiconductors
TYPE
NUMBER
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
2004 Mar 22
NXP Semiconductors
PDZ-B series
GRAPHICAL DATA
MBK245
500
MBG781
300
handbook, halfpage
handbook, halfpage
Ptot
(mW)
IF
(mA)
400
200
300
200
100
100
0
0.6
0
0
50
100
150
200
Tamb (C)
0.8
VF (V)
Tj = 25 C.
Fig.3
MGL273
MGL274
10
handbook, halfpage
handbook, halfpage
12
SZ
(mV/K)
SZ
(mV/K)
4.3
11
10
9.1
3.9
8.2
7.5
6.8
3.6
6.2
5.6
5.1
3.3
4.7
3.0
2.4
2.7
3
20
40
IZ (mA)
60
PDZ2.4B to PDZ4.3B.
Tj = 25 C to 150 C.
PDZ4.7B to PDZ12B.
Tj = 25 C to 150 C.
Fig.4
Fig.5
2004 Mar 22
12
16
IZ (mA)
20
NXP Semiconductors
PDZ-B series
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
HD
2
bp
A
A1
(1)
c
Lp
detail X
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A1
max
bp
HD
Lp
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Mar 22
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
NXP Semiconductors
PDZ-B series
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
2004 Mar 22
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R76/05/pp9