BTB08-600BW3G,

BTB08-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance fullwave ac control applications
where high noise immunity and high commutating di/dt are required.

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Features

Blocking Voltage to 800 V

OnState Current Rating of 8 Amperes RMS at 25C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt - 2000 V/ms minimum at 125C
Minimizes Snubber Networks for Protection
Industry Standard TO220AB Package
High Commutating dI/dt - 4 A/ms minimum at 125C
These are Pb-Free Devices

TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2

MT1
G

MARKING
DIAGRAM

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Peak Repetitive Off-State Voltage (Note 1)

(TJ = -40 to 125C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB08-600BW3G
BTB08-800BW3G

VDRM,
VRRM

OnState RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 80C)

IT(RMS)

8.0

ITSM

90

I2t

36

A2sec

VDSM/
VRSM

VDSM/VRSM
+100

Peak Gate Current (TJ = 125C, t = 20ms)

IGM

4.0

Peak Gate Power

(Pulse Width 1.0 ms, TC = 80C)

PGM

20

Average Gate Power (TJ = 125C)

PG(AV)

1.0

Operating Junction Temperature Range

TJ

Storage Temperature Range

Tstg

Peak NonRepetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,
TC = 25C)
Circuit Fusing Consideration (t = 10 ms)
Non-Repetitive Surge Peak Off-State
Voltage (TJ = 25C, t = 10ms)

Value

Unit
V

600
800

BTB08-xBWG
AYWW

TO-220AB
CASE 221A
STYLE 4

x
A
Y
WW
G

= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package

PIN ASSIGNMENT
1

Main Terminal 1

Main Terminal 2

Gate

-40 to +125

Main Terminal 2

-40 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

ORDERING INFORMATION
Device

Package

Shipping

BTB08-600BW3G

TO-220AB
(Pb-Free)

50 Units / Rail

BTB08-800BW3G

TO-220AB
(Pb-Free)

50 Units / Rail

*For additional information on our Pb-Free strategy and

soldering details, please download the ON Semicon
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2008

February, 2008 - Rev. 1

Publication Order Number:

BTB08-600BW3/D

BTB08-600BW3G, BTB08-800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,

Junction-to-Case
Junction-to-Ambient

Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds

Symbol

Value

Unit

RqJC
RqJA

2.5
60

C/W

TL

260

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic

Symbol

Min

Typ

Max

Unit

0.005
1.0

1.55

2.5
2.5
2.5

50
50
50

50

70
90
70

0.5
0.5
0.5

1.7
1.1
1.1

0.2
0.2
0.2

(dI/dt)c

4.0

A/ms

Critical Rate of Rise of On-State Current

(TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)

dI/dt

50

A/ms

Critical Rate of Rise of OffState Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C)

dV/dt

2000

V/ms

OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25C
TJ = 125C

IDRM/
IRRM

mA

ON CHARACTERISTICS
Peak OnState Voltage (Note 2)
(ITM = 11 A Peak)

VTM

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)

IGT

Holding Current
(VD = 12 V, Gate Open, Initiating Current = 100 mA)

IH

Latching Current (VD = 24 V, IG = 60 mA)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)

IL

Gate Trigger Voltage (VD = 12 V, RL = 30 W)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)

VGT

Gate Non-Trigger Voltage (TJ = 125C)

MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)

VGD

V
mA

mA
mA

DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125C, No Snubber)

2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

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BTB08-600BW3G, BTB08-800BW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current

Symbol

Parameter

VDRM

Peak Repetitive Forward Off State Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Reverse Off State Voltage

IRRM

Peak Reverse Blocking Current

VTM

Maximum On State Voltage

IH

Holding Current

VTM
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 -

VTM

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2

Quadrant II

(+) MT2

Quadrant I

(+) IGT
GATE

(-) IGT
GATE

MT1

MT1

REF

REF
IGT -

+ IGT
(-) MT2

Quadrant III

Quadrant 1
MainTerminal 2 +

(-) MT2

Quadrant IV

(+) IGT
GATE

(-) IGT
GATE

MT1

MT1

REF

REF
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in-phase signals (using standard AC lines) quadrants I and III are used.

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3

+ Voltage
IDRM at VDRM

BTB08-600BW3G, BTB08-800BW3G
125

12
PAV, AVERAGE POWER (WATTS)

TC, CASE TEMPERATURE (C)

DC
120
= 120, 90, 60, 30
115
= 180
110
DC
105

100

3
4
5
6
IT(RMS), RMS ONSTATE CURRENT (AMP)

10
180
8
6
60

4
90
= 30

2
0

120

100

MAXIMUM @ TJ = 125C

10

0.1

0.01

0.1

10

100
t, TIME (ms)

1104

1000

Figure 4. Thermal Response

50
45

MAXIMUM @ TJ = 25C
1

IH, HOLD CURRENT (mA)

I T, INSTANTANEOUS ONSTATE CURRENT (AMP)

TYPICAL AT
TJ = 25C

2
3
4
5
6
IT(RMS), ONSTATE CURRENT (AMP)

Figure 2. OnState Power Dissipation

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

Figure 1. RMS Current Derating

40
35

MTI2 Positive

30
25
20
MTI2 Negative

15
10
5

-40 -25 -10 5

0.1

0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)

20

35

50

65

80

95

110 125

4
TJ, JUNCTION TEMPERATURE (C)

Figure 5. Typical Hold Current Variation

Figure 3. OnState Characteristics

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BTB08-600BW3G, BTB08-800BW3G

Q3
Q1
10

Q2

VGT, GATE TRIGGER VOLTAGE (V)

2
VD = 12 V
RL = 30 W

-40 -25 -10 5

20

35

50

65

80

95

VD = 12 V
RL = 30 W

1.8
1.6
Q1

1.4
1.2
1
Q3

0.8
Q2

0.6
0.4
-40 -25 -10 5

1
110 125

TJ, JUNCTION TEMPERATURE (C)

20

35

50

65

80

95

110 125

TJ, JUNCTION TEMPERATURE (C)

Figure 6. Typical Gate Trigger Current Variation

dv/dt , CRITICAL RATE OF RISE OF OFFSTATE VOLTAGE (V/ m s)

Figure 7. Typical Gate Trigger Voltage Variation

5000
VD = 800 Vpk
TJ = 125C

4K

3K

2K

1K

10

100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

10000

Figure 8. Critical Rate of Rise of OffState Voltage

(Exponential Waveform)

LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC

CHARGE

1N4007
MEASURE
I

TRIGGER

CHARGE
CONTROL

NONPOLAR
CL

TRIGGER CONTROL

IGT, GATE TRIGGER VOLTAGE (mA)

100

200 V

MT2
1N914 51 W

MT1
G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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BTB08-600BW3G, BTB08-800BW3G
PACKAGE DIMENSIONS
TO-220
CASE 221A-07
ISSUE AA

-TB

SEATING
PLANE

C
S

A
U

1 2 3

H
K
Z
R

L
V

G
D
N

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

STYLE 4:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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BTB08-600BW3/D