S V ENGINEERING COLLEGE FOR WOMEN, TIRUPATI

DEPARTMRNT OF EEE

OBJECTIVE QUESTIONS
Class : II B.Tech-I Sem
Name of the faculty: M.Chiranjeevi, ECE Dept.
Subject Name: Electronic Devices And Circuits (13A04301)

Branch & Section: EEE -A

UNIT-I
1. Zener diodes are primarily used as
a) Amplifiers

b) voltage regulators c) rectifiers

d) oscillators

2. The random motion of holes and free electrons due to thermal agitation is called [
a) Diffusion

b) pressure

c) ionization
b) bidirectional switch

c) uni-directional switch

d) None

4. Leakage current across PN junction is due to

a) Minority carriers

b) majority carriers

c) Junction capacitance

d) None

5. in an intrinsic semi conductor, the number of free electrons

a) Equals the number of holes

b) is greater than number of holes

c) Is less than number of holes

d) None

6. N type semi conductors are

a) Negatively charged

b) positively charged

c) Electrically neutral

d) None

7. The zener effect for BZX5.1V diode is valid at_____

a) 6.1V

b) 6V

c) 5.1V

b) aluminum

c) germanium

b) 0.32eV

10. The resistivity of a semi conductor

a) Increases as the temperature increases
b) Decreases as temperature increases

c) 0.72eV

d) gallium

9. The forbidden energy gap for germanium is____

a) 0.12eV

d) 5V

8. The element that doesnt have three valence electrons is_______

a) Boron

d) all

3. A PN junction acts as a
a) Controlled switch

d) 0.92eV

c) remains constant even when temperature varies

d) Increases at low temperatures and remain constant at high temperatures
11. A rectifier is used to
a) Convert ac voltage to pulsating dc

b) convert dc voltage to dc voltage

c) Both a and b

d) convert voltage to current

12. The ripple factor of half wave rectifier is

a) 1.21

b) 0.482

c) 0.406

b)2Vm

c) Vm/2

b) 81.2%

c) 1.12%

b) 2 Vm

c) Vm/2

b) 2Vm

c) Vm/2
b) varactor diode

c) zener diode

d) GUNN diode

18. The bridge rectifier requires _______ number of diodes

a) 2

b) 3

c) 4

a) Keeps the supply OFF

b) keeps the supply ON

c) Improves filtering action

d) improves voltage regulation

20. The primary application of rectifier is in

b) laboratories

c) buses

d) exhibitions

Fill In The Blanks

21. In a PN junction, the region containing the immobile acceptor and donor ions
is Called ________
22. Examples for semiconductor materials __________________
23. A break down which is caused by cumulative multiplication of carriers due
to collisions under field influence__________

d) 8

19. A bleeder resistor is used in a dc power supply because it

a) Cars

d) 3Vm

17. The diode used in stabilizer is

a) PN junction diode

d) 3Vm

16. The peak inverse voltage of BRIDGE rectifier is

a) Vm

d) 48.2%

15. The peak inverse voltage of FWR rectifier is

a) Vm

d) 3Vm

14. The efficiency of HWR is

a) 40.6%

d) 0.121

13. The peak inverse voltage of HWR is

a)Vm

24._______ diode is used for voltage stabilization

25. The expression for diode current equation_______
26. For an ideal diode, Rf is___________
27. For an ideal diode cut in voltage is ________
28. Cut in voltage of Ge diode is _________V
29. The avalanche effect is valid above _________V
30. The Zener diode used as ____________
31. Inductor filter is mostly used for rectifiers _____________loads.
32. The general expression for DC or average current in HWR is_______
33. Ripple factor of HWR is_________
34. Ripple factor of FWR is ________
35. The efficiency of FWR is _________
36. FWR has better voltage regulation than _________
37. The drawback of HWR ____________
38. RMS current of FWR is ___________
39. Ripple factor of HWR is __________
40. Ripple factor of bridge rectifier is ________

UNIT-II
1. A collector collects

a) Electrons from the base in case PNP transistors

b) electrons from the emitter in case of PNP transistors
c) Holes from the base in case of NPN transistors
d) holes from the base in case of PNP transistors
2. A PNP transistors is made of
a) Silicon

b) germanium

c) either Si or Ge

d) None

3. In most transistors, the collector region is made physically larger than the
emitter region
a) For dissipating heat
b) to distinguish it from other regions

c) As it is sensitive to UV rays
d) to reduce resistance in the path of flow of electrons
4. In a transistor the region that is very lightly doped and very thin is the___
a) Emitter

b) base

c) collector

d) None

5. In an NPN transistor when the emitter junction is forward biased and the collector junction
is reverse biased, the transistor will operate in ___
a) Active region

b) saturation region

c) cutoff region

d) inverted region

6. The arrow head on a transistor symbol indicates ______

a) Direction of electron current in the emitter

b) Direction of hole current in the emitter
c) Diffusion current in the emitter
d) Drift current in the emitter
7. The largest current flow of a bipolar transistor occurs_______
a) In emitter

b) in base

c) in collector

d) through emitter

8. A FET has a ________

a) Very high input resistance

b) very low input resistance

c) High connection emitter junction

d) forward biased PN junction

9. Base to emitter voltage VBE is forward biased transistor decreases with increase of
temperature at ___mv/ c
a) 0.6

b) 2.5

c) 0.25

d) 25

10. A transistor is said to be in quiescent state when

a) Emitter junction bias is equal to collector junction bias
b) no current is flowing in it
c) No signal is applied to it
d) it is unbiased
11. FET has offset voltage is about
a) Zero

b) 1.5v

c) 0.6V

d) 0.2v

12. Inter electrode capacitances in FET are of _ farad

a) 1 micro

b) 0.1 micro

c) 100 pico

d) 1 pico

13. The gate to source resistence of JFET is of order of ____ohms

a) 100M

b) 10M

c) 1M

14 ) In JFET The primary control on drain current is exerted by___

a) gate reverse bias

b)voltage drop across channel

d) 0.1M

c) Size of depletion region d) channel resistance

15) In order to protect a MOSFET against damage from any stray voltage at the gate[
a) Grounding rings are provided

b) terminals are shorted

c) Source terminal is earthen during transit

d) None

16. Which of the following is suited for choppers?

a)SCR

b) UJT

c) BJT

b) gm = rd -

c) gm X rd =

d) JFET

17. The parameters of JFET are related as

a) gm = rd +

d) gm = rd /

18.) The amplification factor of FET is 40 and drain resistance is 10Kohm and load
resistance is 10k ohm. The voltage gain is ____
a) -4

b)-20

c) 40

d)-40

19. The gate to source capacitance in small signal high frequency model of JFET
is of order of _____PF
a)5

b)0.5

c)50

d)0.05

20. For quiescent reception the front end of FM tuner contains

a)BJT

b)FET

c)UJT

d)SCR

Fill In The Blanks

21. The gate to source resistance of an FET is of the order of _______
22. The feedback resistance in small region model of MOSFET is of order of______
23. The PINCH-OFF voltage of a JFET is 5 volts. Its cut-off voltage is______
24. in modern MOSFET the material used for gate is______
25. The Transconductance of a FET in saturation region is equal to______
26. The saturation drain current IDS in an FET is __________
27. For junction FET in pinch off region as the drain voltage is increased
the _________is remains constant
28. The main factor which differentiates a D-MOSFET from E MOSFET is absence of ______
29. Input Resistance of FET is ________
30. _______ is ideally suited for chopper
31. in a transistor the reverse saturation current ICO ____________
32. If =0.995, IE =10mA, IC= 0.5mA then ICEO is________
33. If the emitter, base & collector base junctions of BJT are forward biased then the
transistor is in the____

34. For BJT, the condition for saturation region ______

35. In an ideal junction transistor the impurity concentration in emitter, base, and
collector are such that___
36. The early effect in BJT is caused due to____________
37. Base width modulation is also called as________
38. Emitter efficiency is the ratio of ______________
39. Transport factor is the ratio of the_____________
40. If the reverse collector bias increases, the effective base width ____________

UNIT - III
1. The operating point variation is due to
a) ICO

b) VBE

c)

b) 1-

c)/1-

b) sensistor

c) resistor
c) few milli amps

b) no output

c) no distortion

b) saturation region

c) cut off region

]
]

d) no input signal
[

d) None

7. The following biasing technique gives good stability

a) Collector to base bias b) fixed bias

6. For normal amplification, the Q point should be established in the

a) Active region

d)few hundred micro amps

5. The quiescent point of a transistor biasing circuit implies

a) Zero bias

d) both a and b

4. The leakage current in CE configuration may be around

a) Few nano amps b) few micro amps

[
d) 1/ 1-

3. Which of the following has negative temperature co-efficient

a) Thermistor

d) all

2. The stability factor of a fixed bias is

a) 1+

c) self bias

d) None

8. The power transistors the heat developed at the the collector junction may be
Removed by the use of
a) Heat sink

b) transistor with high c) transistor with low d) None

9. The stability factor of CE amplifier is

a) 1+

b) 1-

c) /1-

d) 1/ 1-

10. Thermal runaway occurs when

a) collector is reverse biased

b) transistor is not biased

c) Emitter is forward biased

d) junction capacitance is high

Fill In The Blanks

11. DC load line drawn on CE output characteristics has slope of________
12. AC load line drawn on CE output characteristics has slope of_____
13. Condition for thermal stability is given by ______
14. In self biased CE amplifier the stability factor S is given by_______
15. In a CE amplifier, thermal runaway is unconditionally avoided if____
16. Sensistor having __________ temperature coefficient
17. Thermistor having ________ temperature coefficient
18. __________ bias provides the best operating point stability
19. Typically Ge transistors are operated over temperature range from __________
20. Typically Si transistors are operated over temperature range from __________
21.If the transistor to act as an amplifier, in-------------------region, the transistor must operate
22.---------------,----------------and---------------regions present in the transistor
23.The EB Junction and CB junction are -------------------and--------------biased when the
transistor is in active region
24. The EB Junction and CB junction are -------------------and--------------biased when the
transistor is in saturation region
25. The EB Junction and CB junction are -------------------and--------------biased when the
transistor is in cut off region
26.The relation between emitter current,base currentand collector current is-------------27.The current gain in common base configuration is the ratio of-------------to-------------28. The current gain in common emitter configuration is the ratio of-------------to-------------29. The current gain in common collector configuration is the ratio of-------------to-----------30.The relation between and is------------------

UNIT-IV

1. In MOSFET the Transconductance is of order of___

a) 1ms

b) 100ms

c) 1s

b)1M

d) 100s

2. In MOSFET dynamic resistance is of the order of ___ohms

a) 10K

c)100

d) 1000

3. The feedback capacitance in small signal high frequency model of JFET is of order of[ ]
a)5pf

b)500pf

c) 5000pf

d) 50pf

4. In low voltage region with Fixed V GS the drain resistance in FET is

a) Increases linearly with Vds

b) decreases with increase of Vds

c) Independent of Vds

d) increases

5. Input resistance of common source amplifier in its low frequency small signal
operation is____
a) infinity

b) app infinity

c) zero

d) None

6. In low frequency common source amplifier the resistance is connected between source
and ground to provide______

a) Positive feedback b) negative feedback c) high current gain d) None

7. Relation between gm and gm0 is_____
a) gm= gm0

b) gm = gm0*vp

c) gm= gm0/ vp

d) gm= gm0(1-VGS/VP)

8. The rate of change of drain current with gate voltage VGS keeping VDS constant is
called

a) transconductance b)drain resistance

c)amplification factor d)transport factor

9) The rate of change of drain voltage with drain current iD keeping VGS constant is
called

a) transconductance b)drain resistance

c)amplification factor d)transport factor

10) In CD amplifier voltage gain AV --------

11. What is the phase difference between input and output signal in CE amplifier [

a)+1

a)0

b) -1

b)45

c) / (-1)

c)180

d) / (+1)

d)90

12. The voltage gain of CC amplifier is___

a) < 1

b) >1

c) =1

b) CB and CE

14.______ is known as emitter follower

d)None

13. A cascade amplifier comprises

a) CB and CC

c) CE and CB

d) CC and CE
[

a) CE

b) CC

c) CB

d) None

15.____ is used for impedance matching

a)CE

b) CB

c)CC

b) class B

c) class C

b) CB

c) CC

b) CB

c) CC

b) CB

c) CC

b) CB

c) CC

d) None

20. The BJT amplifier which is having the highest output resistance is____
a)CE

d) None

19. The cutoff frequency is defined for___

a) CE

d) None

18. The cutoff frequency is defined for____

a)CE

[
d) class D

17. Which of the following is normally used in cascading?

a) CE

d) Cascade

16._____ power amplifiers operate in least distortion

a) class A

d) None

Fill In The Blanks

21. The expression for output resistance of common source amplifier is______
22. FET is a_____ device
23. In common source the expression for drain current by removing Rs is_______
24. The expression for input resistance in CG amplifier ______
25. In a source follower the relationship between output conductance and
drain resistance is________
26. Common Drain Amplifier Is also called as ____________
27. Amplification factor is the negative Rate of change of drain voltage with gate voltage
keeping ________ constant
28. The drain resistance increases with _______ in temperature
29. In a FET gmo is proportional to _______
30. In a FET gm is proportional to ______
31. A Transistor has hfe =27, then its hfc will be______
32. Input resistance of ideal voltage amplifier and ideal current amplifier are respectively___
33. The lowest current gain of transistor amplifier is in _____
34. In CE amplifier stage on introducing a resistor RE in emitter circuit the input resistance____
35. With source resistance of 1k the output Impedance of CE amplifier is of order of______
36. The h fe of a typical transistor is of _________

37. The highest voltage gain of transistor amplifier is ____________

38. Parameter hie of typical transistor is of order of _____ ohm
39. The lowest current gain of transistor amplifier is ________
40. With typical load resistance of 4K the voltage gain of CC amplifier is of order of _____

UNIT - V
1. The frequency limit of Tunnel diode is
a) 104Hz

b) 108Hz

c) 1Hz

d) 0.1Hz

2. The DIODE in which impurities are heavily doped is

a) LED

b) VARACTOR diode c) PIN diode

d) Tunnel diode

3. Other name for Tunnel diode is

a) ESAKI diode

b) POWER diode

c) JENPACT diode

d) None

c) both a and b

d) only a

c) 0.5 to 2.0

d) None

4. A advantage of tunnel diode

a) Low cost

b) low power

5. The range of holding voltage is___

a) 0.5 to 20

b) 0.5 to 10

6. The switching time of tunnel diode is _____ ps

a) 10

b) 20

c) 50

d) 100

7 The range of Ip for tunnel diodes is _______mA

a) 1 to 100

b) 5 to 20

c) 2 to 10

d) 1 to 1000

8. The commercial tunnel diodes are made of_______

a) Ge

b) Si

c) Ge and Si

d) None

9. The disadvantage of tunnel diode is_____

a) Low noise

b) low output voltage swing c) low power d) None

10. The value of VF for GaAs is _ _____

a) 1.10

b) 0.7

c) 1.5

Fill In The Blanks

11. Varactor diodes are used in FM receivers to obtain ____

d) 8

12. In a Varactor diode using alloy junction, the transition capacitance is proportional to______
13. The Varactor diode is usually _______biased
14. The doping densities required in Tunnel diode is of the order of ________
15. The Minimum current needed to hold the switch in its ON state is called ________
16. Varactor diodes are also called as _________
17. UJT is usually operated with emitter junction _______ biased
18. SCR is _______ directional device
19. ________is having negative temperature coefficient
20. Application of tunnel diode is as _____________
21.The minimum forward current that must be maintained to keep the SCR in the conducting
state is called -----------------------22.-----------------------is the minimum current obtained by the device before gate drive is
removed .
23.The symbol of tunnel diode is ----------------------24. The symbol of varactor diode is ----------------------25. The symbol of SCR is ----------------------26. The symbol of UJT is ----------------------27.Examples for negative resistance devices----------------------------------28.Forward conduction states in SCR is----------------------------29.Reverse blocking state in SCR is-------------------------30.Dark current occurs in --------------------diode.