IMPORTANT: Besides your calculator and the sheets you use for calculations you are only

allowed to have an A4 sized copy sheet during this exam. Notes, problems and alike are not
permitted. Please submit your copy sheet along with your solutions. You may get your copy
sheet back after your solutions have been graded. Do not forget to write down units!

ELE222E INTRODUCTION TO ELECTRONICS (21403)

Midterm Exam #1  19 March 2007 10.00-12.00
nci LESZ, PhD, Mustafa ALTUN, BSE

1. Assume you are to create a diode using n- and p-typed doped silicon with the following doping
parameters: ND = 5 1015 /cm3 , and NA = 1017 /cm3.
a.
b.
c.
d.

Find the barrier voltage and saturation current for a junction area of 0,1 mm2. (10 points)
Calculate the specific conductivities of n- and p-type doped silicon. (6 points)
Determine the depletion zone width in unbiased state. (4 points)
Calculate the junction capacitance when this diode is reverse biased with 2 V. (5 points)

Ln = 10 m, Lp = 5 m, n = 1350 cm2/Vs, p = 480 cm2/Vs. ni = 1.5 1010 /cm3, q = 1.602 10-19 C,

r = 12, o = 8.85 10-12 F/m, VT = 25 mV.
R1

VZ= +3V
+

+
Vi

VD

Vo
R2

2. Consider the circuit on the left. Study and plot the output
voltage Vo as a function of the input voltage Vi over the
range -10V to +10V.
You may assume the diodes are ideal, i.e., VD = 0 V when
they are forward biased. (25 points)

3. Study DC characteristics of the 3-stage BJT

amplifier circuit with |VBE| = 0,6 V,
hFE = 100 for all four transistors.

+VCC = +10V

I = 0,5 mA

a. Design a current source that will

provide 0,5 mA biasing current to
the differential stage. (10 points)
b. How should RE4 be chosen, such
that, waveform distortion at the
output
Vo
is
minimum
and
symmetrical?
If
you
cannot
+5 V
find take
IC3 = 1 mA.
RD
(20 points)

+VCC = +10V

10k5
RE4

TT11

T2 T2

Vo

T3T5

Vi

T4
4k
R
4

20k

20k

-VEE = -10V

-VEE = -10V

VD
Vi
VS
RS
-5 V

4. The NMOS transistor on the left has the following parameters:

Vth = 1,2 V, nCox(W/L) = 0,16 mA/V2.
Determine the source and drain resistances, such that, with the gate
grounded, ID = 100 A and VDS = 4,5 V. (20 points)

GOOD LUCK!

SOLUTIONS:
1. Using Einstein Equation , i.e., D p / n = VT p / n , we find Dp = 12 cm2/s and Dn = 33.8 cm2/s.
a.

N N
VB = VT ln A 2 D
ni

b.

p = q

Dp

Dn
= 711 mV; I o = A q ni2
+
= 185 fA

L p N D Ln N A

ni2

n + N A p qN A p = 7,69 /( cm)
NA

ni2

n = q N D n +
p qN D n = 1,08 /( cm)
ND

c.

wdep =

2 o r VB
q

d. with reverse at 2 V,
Thus, C = o r

1
1

+
NA ND

wdep =

=0,44 m

2 o r (V B + Vbias ) 1
1
= 0,87 m

+
q
NA ND

A
= 12 pF
w

2. This circuit has to be analyzed in three parts. The plot is placed at the bottom.
a. -10 V < Vin < 0 V: Both the regular diode and the Zener diode are forward biased. If we
assume they are ideal, they effectively create electrical shorts. That is,
i. R1 is directly connected to R2
ii. both ends of R2 are shorted
iii. Vo = 0 V
b. +3 V < Vin < +10 V: Both the regular diode and the Zener diode are reverse biased.
i. the Zener diode is in the Zener zone and 3 V drops across it.
ii. the regular diode is in cut off.
iii. current flows over R1, the Zener diode and R2.and is

I=

Vi VZ
R1 + R2

iv. Vo = R2 I . If this current changes linearly, then Vo changes linearly.

c. 0 V < Vin < +3 V: Both the regular diode and the Zener diode are reverse biased, yet, the
Zener diode is not in
Vo
Zener zone.
i. no current flows
over R1, the
Zener diode, the
regular
diode
and R2.
ii. Vo = 0 V.

-10 V

3V

10 V

Vi

+VCC = +10V

+VCC = +10V

I = 0,5 mA

10k5

3. DC characteristics are to be studied.

RE4

a. See the sketch below. You

should calculate the value of R,
and make sure T6 operates in
active mode.

TT11

T2 T2

Vo

T3T5

Vi

T4
4k
R
4

+VCC = +10V

T5

20k

Iref

-VEE = -10V

Iref = 0,5 mA

T6

20k

-VEE = -10V

Without neglecting the base currents of the

differential stage, for Vi = 0

I C1 = I C 2 =

Iref = 0,5 mA

hFE 0,5mA

hFE + 1
2

I C1 = I C 2 = 0,248mA
b. Following the red loop

( I C 2 I B 3 )20k + VBE 3 + (hFE + 1) I B 3 4k = 0

I C 3 = hFE

20k * I C 2 VBE 3
20k * 0,248mA 0,6V
= 1,028mA
= 100
(100 + 1)4k + 20k
(hFE + 1)4k + 20k

Following the blue loop and recalling that waveform distortion at the output should be
minimum and symmetrical, i.e., Vo = 0 V

(hFE + 1) I B 3 RE 4 + VEB 4 ( I C 3 I B 4 )10k 5 = 0 , with (hFE + 1) I B 4 RE 4 = 10V

10V + VEB 4 ( I C 3 I B 4 )10k 5 = 10V + 0,6V (1,028mA I B 4 )10k 5 = 0
10V
10,6V

= 1,87 mA and R E 4 =
I C 4 = hFE 1,028mA
= 5k 27

10k 5
(hFE + 1) I B 4

4.

ID =
Since
As

n C ox W
2

[VGS Vth ]2 VGS

VGS Vth for channel creation, VGS

VS (5V )
= 26k 82
0,1mA
= 2.318V + 4,5V = 2,182V and thus

VG = 0V VS = 2,318V thus RS =

VDS = 4,5V VD = VS + VDS

5V V D 5V 2,182V
RD =
=
= 28k18
0,1mA
0,1mA

Since

2,318V
ID
0,1mA
= 1,2V
=
2
n C ox W
0,08mA / V
0,082V
2 L
= 2,318V .

= Vth