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IRF840A, SiHF840A

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

Low Gate Charge Qg Results in Simple Drive


Requirement
Available
Improved Gate, Avalanche and Dynamic dV/dt RoHS*
COMPLIANT
Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Effective Coss Specified
Compliant to RoHS Directive 2002/95/EC

500

RDS(on) ()

VGS = 10 V

0.85

Qg (Max.) (nC)

38

Qgs (nC)

9.0

Qgd (nC)

18

Configuration

Single
D

TO-220AB

APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

Two Transistor Forward


Half Bridge
Full Bridge

S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF840APbF
SiHF840A-E3
IRF840A
SiHF840A

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)


PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

500

Gate-Source Voltage

VGS

30

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor


Energyb

UNIT
V

8.0
5.1

32
1.0

W/C
mJ

EAS

510

Repetitive Avalanche Currenta

IAR

8.0

Repetitive Avalanche Energya

EAR

13

mJ

Single Pulse Avalanche

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc


Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

125

dV/dt

5.0

V/ns

TJ, Tstg

- 55 to + 150
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91065
S11-0506-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.


THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A
Vishay Siliconix

THERMAL RESISTANCE RATINGS


PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

1.0

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)


PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

VGS = 0 V, ID = 250 A

500

VDS/TJ

Reference to 25 C, ID = 1 mA

0.58

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

V
nA

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance

IGSS
IDSS
RDS(on)
gfs

VGS = 30 V

100

VDS = 500 V, VGS = 0 V

25

VDS = 400 V, VGS = 0 V, TJ = 125 C

250

ID = 4.8 Ab

VGS = 10 V

VDS = 50 V, ID = 4.8 Ab

0.85

3.7

1018

155

8.0

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz

1490

Output Capacitance

Coss

VGS = 0 V; VDS = 400 V, f = 1.0 MHz

42

Effective Output Capacitance


Total Gate Charge
Gate-Source Charge

Coss eff.

VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5

VGS = 0 V; VDS = 0 V to 400

Vc

56

Qg
Qgs

VGS = 10 V

ID = 8 A, VDS = 400 V,
see fig. 6 and 13b

38

9.0

Gate-Drain Charge

Qgd

18

Turn-On Delay Time

td(on)

11

23

26

19

8.0

32

2.0

Rise Time
Turn-Off Delay Time
Fall Time

tr
td(off)

pF

VDD = 250 V, ID = 8 A
Rg = 9.1 , RD = 31, see fig. 10b

tf

nC

ns

Drain-Source Body Diode Characteristics


Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 8 A, VGS = 0 Vb
TJ = 25 C, IF = 8 A, dI/dt = 100 A/sb

422

633

ns

2.16

3.24

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

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Document Number: 91065


S11-0506-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.


THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

10

102

VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

4.5 V

20 s Pulse Width
TC = 25 C

0.1
0.1

10

4.0

10

4.5 V

20 s Pulse Width
TC = 150 C

0.1
0.1
91065_02

10

102

VDS, Drain-to-Source Voltage (V)


Fig. 2 - Typical Output Characteristics, TC = 150 C

Document Number: 91065


S11-0506-Rev. B, 21-Mar-11

6.0

7.0

8.0

9.0

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance


(Normalized)

ID, Drain-to-Source Current (A)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

5.0

VGS, Gate-to-Source Voltage (V)

91065_03

Top

20 s Pulse Width
VDS = 50 V

0.1

Fig. 1 - Typical Output Characteristics, TC = 25 C

102

TJ = 150 C

TJ = 25 C

102

10

VDS, Drain-to-Source Voltage (V)

91065_01

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

102

91065_04

3.0

ID = 8.0 A
VGS = 10 V

2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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This datasheet is subject to change without notice.


THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A
Vishay Siliconix

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

104

Ciss

103

Coss

102

10

Crss

102

ISD, Reverse Drain Current (A)

105

10
TJ = 150 C
TJ = 25 C
1

102

10

103

VDS, Drain-to-Source Voltage (V)

91065_05

0.2

0.8

102

ID = 8.0 A

VDS = 250 V
VDS = 100 V

12

10 s
10
100 s
1 ms
1
10 ms

4
For test circuit
see figure 13

0
0
91065_06

10

20

30

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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TC = 25 C
TJ = 150 C
Single Pulse

0.1

40

QG, Total Gate Charge (nC)

1.4

Operation in this area limited


by RDS(on)

VDS = 400 V

16

1.1

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

0.5

VSD, Source-to-Drain Voltage (V)

91065_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

VGS = 0 V

0.1

10
91065_08

102

103

104

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91065


S11-0506-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.


THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A
Vishay Siliconix

RD

VDS
VGS

D.U.T.

RG

8.0

+
- VDD
10 V

ID, Drain Current (A)

6.0

Pulse width 1 s
Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

4.0

VDS

2.0

90 %
0.0
25

50

75

100

125

150
10 %
VGS

TC, Case Temperature (C)

91065_09

td(on)

td(off) tf

tr

Fig. 9 - Maximum Drain Current vs. Case Temperature


Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

1
D = 0.5
PDM
0.2
0.1

0.1
0.05

t1
t2

0.02
0.01
10-2
10-5
91065_11

Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

Single Pulse
(Thermal Response)
10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)


Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91065


S11-0506-Rev. B, 21-Mar-11

www.vishay.com
5

This datasheet is subject to change without notice.


THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A
Vishay Siliconix

L
Vary tp to obtain
required IAS

VDS

D.U.T

RG

+
-

IAS

QG

10 V

V DD
QGS

QGD

10 V
0.01

tp

VG

Fig. 12a - Unclamped Inductive Test Circuit

Charge
VDS
Fig. 12d - Basic Gate Charge Waveform

tp
VDD
VDS

IAS

EAS, Single Pulse Avalanche Energy (mJ)

Fig. 12b - Unclamped Inductive Waveforms

1200
ID
3.6 A
5.1 A
Bottom 8.0 A
Top

1000

VDSav, Avalanche Voltage (V)

600

580

560

540

520

800

0.0
600

1.0

2.0

3.0

4.0

5.0

7.0

6.0

8.0

IAV, Avalanche Current (A)

91065_12d

400

Fig. 13a - Typical Drain-to-Source Voltage vs.


Avalanche Current

200
0
25

91065_12c

50

75

100

125

Current regulator
Same type as D.U.T.

150

Starting TJ, Junction Temperature (C)

50 k

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

12 V

0.2 F
0.3 F

D.U.T.

VDS

VGS
3 mA

IG
ID
Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

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Document Number: 91065


S11-0506-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.


THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF840A, SiHF840A
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit


+

D.U.T.

Circuit layout considerations


Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive


P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform


Reverse
recovery
current

Body diode forward


current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91065.

Document Number: 91065


S11-0506-Rev. B, 21-Mar-11

www.vishay.com
7

This datasheet is subject to change without notice.


THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
MILLIMETERS

H(1)

L(1)

M*

b(1)

INCHES

DIM.

MIN.

MAX.

MIN.

MAX.

4.14

4.70

0.163

0.185

0.69

1.02

0.027

0.040

b(1)

1.14

1.73

0.045

0.068

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

0.43

1.40

0.017

0.055

H(1)

6.10

6.48

0.240

0.255
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.59

3.00

0.102

0.118

ECN: X15-0003-Rev. A, 19-Jan-15


DWG: 6031
Notes
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
Outline conforms to JEDEC outline TO-220AB with exception
of dimension F

C
b
e
J(1)
e(1)

Document Number: 66542


1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 19-Jan-15

Legal Disclaimer Notice


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Vishay

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

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