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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
500
RDS(on) ()
VGS = 10 V
0.85
Qg (Max.) (nC)
38
Qgs (nC)
9.0
Qgd (nC)
18
Configuration
Single
D
TO-220AB
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High Speed Power Switching
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF840APbF
SiHF840A-E3
IRF840A
SiHF840A
Lead (Pb)-free
SnPb
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
30
VGS at 10 V
TC = 25 C
TC = 100 C
ID
IDM
UNIT
V
8.0
5.1
32
1.0
W/C
mJ
EAS
510
IAR
8.0
EAR
13
mJ
TC = 25 C
for 10 s
6-32 or M3 screw
PD
125
dV/dt
5.0
V/ns
TJ, Tstg
- 55 to + 150
300d
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91065
S11-0506-Rev. B, 21-Mar-11
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1
IRF840A, SiHF840A
Vishay Siliconix
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
62
RthCS
0.50
RthJC
1.0
UNIT
C/W
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 A
500
VDS/TJ
Reference to 25 C, ID = 1 mA
0.58
V/C
VGS(th)
2.0
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = 30 V
100
25
250
ID = 4.8 Ab
VGS = 10 V
VDS = 50 V, ID = 4.8 Ab
0.85
3.7
1018
155
8.0
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
Output Capacitance
Coss
1490
Output Capacitance
Coss
42
Coss eff.
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Vc
56
Qg
Qgs
VGS = 10 V
ID = 8 A, VDS = 400 V,
see fig. 6 and 13b
38
9.0
Gate-Drain Charge
Qgd
18
td(on)
11
23
26
19
8.0
32
2.0
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
pF
VDD = 250 V, ID = 8 A
Rg = 9.1 , RD = 31, see fig. 10b
tf
nC
ns
IS
ISM
VSD
trr
Qrr
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 C, IS = 8 A, VGS = 0 Vb
TJ = 25 C, IF = 8 A, dI/dt = 100 A/sb
422
633
ns
2.16
3.24
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
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2
IRF840A, SiHF840A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
10
102
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
20 s Pulse Width
TC = 25 C
0.1
0.1
10
4.0
10
4.5 V
20 s Pulse Width
TC = 150 C
0.1
0.1
91065_02
10
102
6.0
7.0
8.0
9.0
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
5.0
91065_03
Top
20 s Pulse Width
VDS = 50 V
0.1
102
TJ = 150 C
TJ = 25 C
102
10
91065_01
102
91065_04
3.0
ID = 8.0 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20
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3
IRF840A, SiHF840A
Vishay Siliconix
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
104
Ciss
103
Coss
102
10
Crss
102
105
10
TJ = 150 C
TJ = 25 C
1
102
10
103
91065_05
0.2
0.8
102
ID = 8.0 A
VDS = 250 V
VDS = 100 V
12
10 s
10
100 s
1 ms
1
10 ms
4
For test circuit
see figure 13
0
0
91065_06
10
20
30
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4
TC = 25 C
TJ = 150 C
Single Pulse
0.1
40
1.4
VDS = 400 V
16
1.1
0.5
91065_07
20
VGS = 0 V
0.1
10
91065_08
102
103
104
IRF840A, SiHF840A
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
8.0
+
- VDD
10 V
6.0
Pulse width 1 s
Duty factor 0.1 %
4.0
VDS
2.0
90 %
0.0
25
50
75
100
125
150
10 %
VGS
91065_09
td(on)
td(off) tf
tr
10
1
D = 0.5
PDM
0.2
0.1
0.1
0.05
t1
t2
0.02
0.01
10-2
10-5
91065_11
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
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5
IRF840A, SiHF840A
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+
-
IAS
QG
10 V
V DD
QGS
QGD
10 V
0.01
tp
VG
Charge
VDS
Fig. 12d - Basic Gate Charge Waveform
tp
VDD
VDS
IAS
1200
ID
3.6 A
5.1 A
Bottom 8.0 A
Top
1000
600
580
560
540
520
800
0.0
600
1.0
2.0
3.0
4.0
5.0
7.0
6.0
8.0
91065_12d
400
200
0
25
91065_12c
50
75
100
125
Current regulator
Same type as D.U.T.
150
50 k
12 V
0.2 F
0.3 F
D.U.T.
VDS
VGS
3 mA
IG
ID
Current sampling resistors
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6
IRF840A, SiHF840A
Vishay Siliconix
D.U.T.
Rg
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test
+
-
VDD
Period
D=
P.W.
Period
VGS = 10 Va
Re-applied
voltage
Inductor current
VDD
Ripple 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91065.
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7
Package Information
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Vishay Siliconix
TO-220-1
MILLIMETERS
H(1)
L(1)
M*
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
4.14
4.70
0.163
0.185
0.69
1.02
0.027
0.040
b(1)
1.14
1.73
0.045
0.068
0.36
0.61
0.014
0.024
14.33
15.85
0.564
0.624
9.96
10.52
0.392
0.414
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
0.43
1.40
0.017
0.055
H(1)
6.10
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
3.53
3.94
0.139
0.155
2.59
3.00
0.102
0.118
C
b
e
J(1)
e(1)
Revison: 19-Jan-15
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Revision: 02-Oct-12