AO4405

30V P-Channel MOSFET

General Description

Product Summary

The AO4405 uses advanced trench technology to provide

excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.

ID (at VGS=-10V)

-30V
-6A

RDS(ON) (at VGS=-10V)

< 50m

RDS(ON) (at VGS = -4.5V)

< 85m

VDS

100% UIS Tested

100% Rg Tested

SOIC-8
Top View
D
D

D
Bottom View

D
D
G
G
S

S
S
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current
C

Units
V

20

-6

ID

TA=70C

Maximum
-30

-5.1

IDM

-30

Avalanche Current C

IAS, IAR

17

Avalanche energy L=0.1mH C

EAS, EAR

14

mJ

VDS Spike

VSPIKE

-36

Pulsed Drain Current

Power Dissipation B

10s
TA=25C

PD

TA=70C

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead

Rev.10.0: March 2014

3.1

TJ, TSTG

Symbol
t 10s
Steady-State
Steady-State

RJA
RJL

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-55 to 150

Typ
31
59
16

Max
40
75
24

Units
C/W
C/W
C/W

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AO4405

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=-250A, VGS=0V

-30
-1
TJ=55C

-5

Gate-Body leakage current

VDS=0V, VGS= 20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.4

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-30

nA

-2.4

33

50

50

70

VGS=-4.5V, ID=-4A

53

85

14

TJ=125C

gFS

Forward Transconductance

VDS=-5V, ID=-6A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

Crss

Reverse Transfer Capacitance

Gate resistance

-0.8

DYNAMIC PARAMETERS
Ciss
Input Capacitance

Rg

100

Static Drain-Source On-Resistance

Output Capacitance

Units

-1.9

VGS=-10V, ID=-6A

Coss

Max

VDS=-30V, VGS=0V

IGSS

RDS(ON)

Typ

VGS=0V, VDS=-15V, f=1MHz

S
V

-3.5

520

pF

100

pF
pF

7.5

11.5

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

9.2

11

nC

Qg(4.5V) Total Gate Charge

4.6

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

VGS=-10V, VDS=-15V, ID=-6A

3.5

-1

65
VGS=0V, VDS=0V, f=1MHz

1.6

nC

2.2

nC

7.5

ns

VGS=-10V, VDS=-15V, RL=2.5,

RGEN=3

5.5

ns

19

ns

tf

Turn-Off Fall Time

ns

trr

Body Diode Reverse Recovery Time

IF=-6A, dI/dt=100A/s

11

Qrr

Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/s

5.3

ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.10.0: March 2014

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AO4405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

40
-10V

-8V

VDS=-5V

-6V

35

25

30

-5V

20
-ID(A)

-ID (A)

25
VGS=-4.5V

20
15

15
10

-4V

125C

10

25C

5
5

VGS=-3.5V
0

0
0

0.5

80

1.5

2.5

3.5

4.5

5.5

Normalized On-Resistance

1.8

70
VGS=-4.5V

60
RDS(ON) (m
)

-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

50
40
30
VGS=-10V

20
10

VGS=-10V
ID=-6A

1.6
1.4

17
5
VGS=-4.5V
ID=-4A2
10

1.2
1
0.8

10

25

50

75

100

125

150

175

0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

120

1.0E+02
ID=-6A

1.0E+01

100

40

80

-IS (A)

RDS(ON) (m
)

1.0E+00

125C
60

125C

1.0E-01

25C
1.0E-02
1.0E-03

40

1.0E-04
25C
1.0E-05

20
2

6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev.10.0: March 2014

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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AO4405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

800
VDS=-15V
ID=-6A

700

8
Ciss

Capacitance (pF)

-VGS (Volts)

600
6

500
400
300
Coss
200

2
100
0
0

2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics

10

100.0

5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics

30

100.0

TA=25C
TA=100C
TA=150C

10.0
TA=125C

10.0

-ID (Amps)

-IAR (A) Peak Avalanche Current

Crss

10s
100s

RDS(ON)
limited

1ms

1.0

10ms
0.1

TJ(Max)=150C
TA=25C

10s
DC

0.0

1.0

0.01

10
100
1000
Time in avalanche, tA (
s)
Figure 9: Single Pulse Avalanche capability (Note C)

0.1

1
10
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)

100

10000
TA=25C

Power (W)

1000

100

10

1
0.00001

0.001

0.1

10

1000

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Rev.10.0: March 2014

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AO4405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RJA=75C/W

0.1
PD

0.01
Single Pulse

Ton

0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.10.0: March 2014

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Page 5 of 6

AO4405

Gate Charge Test Circuit & Waveform

Vgs
Qg
-10V

VDC

VDC

Qgd

Qgs

Vds

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds

toff

ton

Vgs

DUT

Vgs

VDC

td(on)

t d(off)

tr

tf

90%

Vdd

Rg

Vgs

10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2

E AR= 1/2 LIAR

Vds
Vds

Id

Vgs

Vgs

VDC

Rg

BVDSS
Vdd
Id
I AR

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd
Vgs
Ig

Rev.10.0: March 2014

-Isd

+ Vdd

t rr

dI/dt
-I RM
Vdd

VDC

-I F

-Vds

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Page 6 of 6