2SK2002-01MR

N-channel MOS-FET

FAP-IIA Series

600V

> Features
-

4,5

3A

30W

> Outline Drawing

High Speed Switching

Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = 30V Guarantee
Avalanche Proof

> Applications
-

Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25C), unless otherwise specified

Item
Drain-Source-Voltage
Drain-Gate-Voltage(RGS=20K)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range

Symbol
V DS
V DGR
ID
I D(puls)
V GS
PD
T ch
T stg

Rating
600
600
3
12
30
30
150
-55 ~ +150

Unit
V
V
A
A
V
W
C
C

- Electrical Characteristics (TC=25C), unless otherwise specified

Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current

Symbol
V (BR)DSS
V GS(th)
I DSS

Gate Source Leakage Current

Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)

I
R
g
C
C
C
t
t
t
t
I
I
I
V
t
Q

Turn-Off-Time toff (ton=td(off)+tf)

Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge

- Thermal Characteristics
Item
Thermal Resistance

GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV

Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=600V
Tch=25C
VGS=0V
Tch=125C
VGS=30V
VDS=0V
ID=1,5A
VGS=10V
ID=1,5A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=3A
VGS=10V
RGS=10
L=100H
Tch=25C

Min.
600
2,5

1,5

Typ.
3,0
10
0,2
10
4
3
600
50
10
15
10
40
10

DRM

rr
rr

Symbol
R th(ch-a)
R th(ch-c)

IF=2xIDR VGS=0V Tch=25C

IF=IDR VGS=0V
-dIF/dt=100A/s Tch=25C

Test conditions
channel to air
channel to case

3,5
500
1,0
100
4,5
900
75
15
25
15
60
15

DR

SD

Max.

1,1
400
1,5

Min.

FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56

Typ.

3
12
1,65

Max.
62,5
4,17

Unit
V
V
A
mA
nA

S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
C

Unit
C/W
C/W

2SK2002-01MR

N-channel MOS-FET
600V

4,5

3A

FAP-IIA Series

30W

> Characteristics
Typical Output Characteristics

Drain-Source-On-State Resistance vs. Tch

Tch [C]

Typical Drain-Source-On-State-Resistance vs. ID

Gate Threshold Voltage vs. Tch

ID [A]

Tch [C]

VDS [V]

C [nF]

VDS [V]

Qg [nC]

Allowable Power Dissipation vs. TC

IF [A]

Forward Characteristics of Reverse Diode

VGS [V]

Typical Input Charge

VGS(th) [V]

Typical Capacitance vs. VDS

VGS [V]

gfs [S]

RDS(ON) []

ID [A]

Typical Forward Transconductance vs. ID

ID [A]

ID [A]

VDS [V]

RDS(ON) []

Typical Transfer Characteristics

VSD [V]

Safe operation area

Zth(ch-c) [K/W]

12

11

ID [A]

10

PD [W]

Transient Thermal impedance

Tc [C]

VDS [V]

This specification is subject to change without notice!

t [s]

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