DIGITAL AUDIO MOSFET

PD - 97282

IRF6785MTRPbF
Key Parameters
200

Features

VDS
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier
RDS(on) typ. @
applications
Qg typ.
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
RG(int) max
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 250W per channel into 8 Load in
Half-Bridge Configuration Amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant containing no lead or bromide
MZ
Lead-Free (Qualified up to 260C Reflow)
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ

SX

ST

SH

MQ

MX

MT

MN

VGS = 10V

85
26

V
m:
nC

3.0

DirectFET ISOMETRIC

MZ

Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.

Absolute Maximum Ratings

Max.

Units

VDS

Drain-to-Source Voltage

Parameter

200

VGS

Gate-to-Source Voltage

20

ID @ TC = 25C
ID @ TA = 25C

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

19
3.4

ID @ TA = 70C

Continuous Drain Current, VGS @ 10V

2.7

IDM

Pulsed Drain Current

27

Maximum Power Dissipation

57

PD @TA = 25C

Power Dissipation

2.8

PD @TA = 70C
EAS

Single Pulse Avalanche Energy

PD @TC = 25C

e
Power Dissipation e

c

IAR

Avalanche Current

TJ

Linear Derating Factor

Operating Junction and

TSTG

Storage Temperature Range

1.8

33

mJ

8.4

0.022
-40 to + 150

W/C
C

Thermal Resistance
Parameter

ek
hk
Junction-to-Ambient ik
Junction-to-Case jk

Typ.

Max.

Units
C/W

RJA

Junction-to-Ambient

45

RJA

Junction-to-Ambient

12.5

20

RJA
RJC
RJ-PCB

Junction-to-PCB Mounted

Notes through are on page 2

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1.4

1.4

1
04/18/07

IRF6785MTRPbF

Static @ TJ = 25C (unless otherwise specified)

Parameter

Conditions

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

200

V(BR)DSS/TJ
RDS(on)

Breakdown Voltage Temp. Coefficient

0.22

V/C

Reference to 25C, ID = 1mA

Static Drain-to-Source On-Resistance

85

100

VGS(th)

Gate Threshold Voltage

3.0

5.0

m
V

VDS = VGS, ID = 100A

IDSS

Drain-to-Source Leakage Current

20

IGSS
RG(int)

Gate-to-Source Forward Leakage

250

100

VGS = 0V, ID = 250A

VGS = 10V, ID = 4.2A

VDS = 200V, VGS = 0V

VDS = 160V, VGS = 0V, TJ = 125C

nA

VGS = 20V
VGS = -20V

Gate-to-Source Reverse Leakage

-100

Internal Gate Resistance

3.0

Dynamic @ TJ = 25C (unless otherwise specified)

Parameter
gfs
Qg

Min.

Typ.

Max.

Units

Forward Transconductance

8.9

Conditions
VDS = 10V, ID = 4.2A

Total Gate Charge

26

36

VDS = 100V

Qgs1

Pre-Vth Gate-to-Source Charge

6.3

VGS = 10V

Qgs2

Post-Vth Gate-to-Source Charge

1.3

Qgd

Gate-to-Drain Charge

6.9

Qgodr

11.5

Qsw

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

8.2

td(on)

Turn-On Delay Time

6.2

VDD = 100V

tr

Rise Time

8.6

ID = 4.2A

td(off)

Turn-Off Delay Time

7.2

tf

Fall Time

14

RG = 6.0
VGS = 10V

Ciss

Input Capacitance

1500

VGS = 0V

Coss

Output Capacitance

160

Crss

Reverse Transfer Capacitance

31

Coss

Output Capacitance

1140

= 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz

Coss

Output Capacitance

69

VGS = 0V, VDS = 160V, = 1.0MHz

Coss eff.

Effective Output Capacitance

140

VGS = 0V, VDS = 0V to 160V

Min.

Typ.

Max.

19

ID = 4.2A
nC

ns

See Fig. 6 and 17

VDS = 25V
pF

Diode Characteristics
Parameter
Continuous Source Current

IS

(Body Diode)
ISM

Pulsed Source Current

c

Units
A

p-n junction diode.

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

71

Qrr

Reverse Recovery Charge

190

showing the
integral reverse

27

(Body Diode)

Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 0.94mH, RG = 25, IAS = 8.4A.
Surface mounted on 1 in. square Cu board.
Pulse width 400s; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.

Conditions
MOSFET symbol

TJ = 25C, IS = 4.2A, VGS = 0V

ns

nC

TJ = 25C, IF = 4.2A, VDD = 25V

di/dt = 100A/s

1.3

Used double sided cooling , mounting pad with large heatsink.

Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.

TC measured with thermal couple mounted to top

(Drain) of part.

R is measured at TJ of approximately 90C.

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IRF6785MTRPbF
100

100

10
BOTTOM

VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V

VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

5.5V

10
BOTTOM

5.5V

60s PULSE WIDTH

60s PULSE WIDTH

Tj = 150C

Tj = 25C
0.1

0.1
0.1

10

100

0.1

V DS, Drain-to-Source Voltage (V)

100

100

2.5
VDS = 25V
60s PULSE WIDTH

10

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID, Drain-to-Source Current (A)

10

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

T J = -40C
T J = 25C

T J = 150C
1

0.1

ID = 4.2A
VGS = 10V
2.0

1.5

1.0

0.5
3

12.0

VGS = 0V,
f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED

ID= 4.2A
VGS, Gate-to-Source Voltage (V)

Crss = C gd
Coss = Cds + C gd

10000

Ciss

1000

Coss
100

20 40 60 80 100 120 140 160

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

-60 -40 -20 0

T J , Junction Temperature (C)

VGS, Gate-to-Source Voltage (V)

C, Capacitance (pF)

V DS, Drain-to-Source Voltage (V)

Crss

10

10.0

VDS= 160V
VDS= 100V

8.0

VDS= 40V

6.0
4.0
2.0
0.0

10

100

VDS, Drain-to-Source Voltage (V)

1000

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

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10

15

20

25

30

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

IRF6785MTRPbF
100

T J = -40C
T J = 25C
T J = 150C

10

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)
100sec

10

10msec
1msec

DC

T A = 25C
Tj = 150C
Single Pulse

VGS = 0V
0.1

0.1
0.2

0.4

0.6

0.8

1.0

1.2

10

100

1000

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

5.0
VGS(th) , Gate Threshold Voltage (V)

20

ID, Drain Current (A)

0.1

VDS, Drain-to-Source Voltage (V)

VSD, Source-to-Drain Voltage (V)

15

10

4.5

4.0
ID = 100A

3.5

ID = 250A

3.0

2.5
25

50

75

100

125

150

-75 -50 -25

T C , Case Temperature (C)

25

50

75 100 125 150

T J , Temperature ( C )

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs. Case Temperature

Thermal Response ( Z thJA ) C/W

100
D = 0.50
10

0.20
0.10
0.05
0.02
0.01

0.1

R1
R1
J
1

R2
R2

R3
R3

A
1

Ci= i/Ri
Ci= i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

0.01

0.001
1E-006

1E-005

0.0001

i (sec)

Ri (C/W)

R4
R4

1.2801

0.000322

8.7256

0.164798

21.75

2.2576

13.2511

69

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A

0.001

0.01

0.1

10

100

1000

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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RDS(on), Drain-to -Source On Resistance ( m)

RDS(on), Drain-to -Source On Resistance (m )

IRF6785MTRPbF
500
ID = 4.2A
400

300

200

T J = 125C

100
T J = 25C
0
4

10

12

14

200
175

T J = 125C

150
125
T J = 25C

100
75

Vgs = 10V
50
0

16

VGS, Gate -to -Source Voltage (V)

+
V
- DD

IAS
VGS
20V

0.01

tp

Fig 15a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

EAS , Single Pulse Avalanche Energy (mJ)

DRIVER

D.U.T

RG

20

150

15V

15

Fig 13. On-Resistance vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

VDS

10
ID, Drain Current (A)

ID
TOP
0.85A
1.04A
BOTTOM 8.4A

125
100
75
50
25
0
25

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

I AS

Fig 15b. Unclamped Inductive Waveforms

VDS
VGS

RD

VDS

90%
D.U.T.

RG

- VDD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 16a. Switching Time Test Circuit

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10%

VGS
td(on)

tr

td(off)

tf

Fig 16b. Switching Time Waveforms

IRF6785MTRPbF
Id
Vds
Vgs

L
VCC

DUT

20K
1K

Vgs(th)

Qgodr

Fig 17b. Gate Charge Waveform

Fig 17a. Gate Charge Test Circuit

Driver Gate Drive

D.U.T

RG

D.U.T. ISD Waveform

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

**

P.W.
Period

***

Reverse
Recovery
Current

VDD

D=

Period

VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

P.W.

Qgs2 Qgs1

Qgd

+
-

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

Forward Drop

Inductor Curent
Ripple 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

VDD

ISD

*** VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET Power MOSFETs

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IRF6785MTRPbF
DirectFET Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

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IRF6785MTRPbF
DirectFET Outline Dimension, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

DIMENSIONS
IMPERIAL

METRIC
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P

MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
0.616
0.020
0.08

MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
0.676
0.080
0.17

MAX
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
0.0008
0.003

MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007

DirectFET Part Marking

GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"

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IRF6785MTRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION

NOTE: CONTROLLING
DIMENSIONS IN MM

CODE
A
B
C
D
E
F
G
H

DIMENSIONS
IMPERIAL
METRIC
MIN
MIN
MAX
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.201
5.10
0.209
5.30
0.256
6.50
0.264
6.70
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6785TRPBF). For 1000 parts on 7"
reel, order IRF6785TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
IMPERIAL
METRIC
IMPERIAL
CODE
MIN
MAX
MIN
MAX
MIN
MAX
MAX
MIN
A
6.9
N.C
12.992 N.C
330.0
177.77 N.C
N.C
B
0.75
0.795
N.C
20.2
19.06
N.C
N.C
N.C
C
0.53
0.504
0.50
12.8
13.5
0.520
12.8
13.2
D
0.059
0.059
N.C
1.5
1.5
N.C
N.C
N.C
E
2.31
3.937
N.C
100.0
58.72
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
13.50
18.4
G
0.47
0.488
N.C
12.4
11.9
0.567
12.01
14.4
H
0.47
0.469
N.C
11.9
11.9
0.606
12.01
15.4

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IRs Web site.

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/07