Escolar Documentos
Profissional Documentos
Cultura Documentos
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If a system produces frequencies in the output are not present in the input, then the system
cannot be
(A) Minimum phase system
Key:
(B)
Exp:
Since linearity and time-invariance (shift-invariance) doesnt effect the frequency of input to get
the output the system cant be LTI.
2.
Key:
(B)
3.
(B) Strain
Key:
(C)
4.
Which one of the following thermocouple pairs has maximum sensitivity around 273 K?
(A) Nichrome-constant
(C) Platinum-constantan
(B) Copper-Nickel
(D) Nickel-constantan
Key:
(A)
5.
Maximum power will be delivered from an ac source to a resistive load in a network when
the magnitude of the source impedance is equal to
Key:
Exp:
(D) Zero
(D)
The equation of power for resistive load is
2
PR L
VS
RL
ZS R L
6.
Key:
(A)
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x m r 1
In super conductors x m 1 (negative)
r 0,
super conductor has zero Resistivity.
Directions: Each of the next Fourteen (14) items consists of two statements one labeled
as the Statement (I) and the other as Statement (II). Examine these two statements
carefully and select the answers to these items using the codes given below.
Codes:
(A) Both Statement (I) and Statement (II) are individually true and Statement (II) is the
correct explanation of Statement (I)
(B) Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT
the correct explanation of Statement (I)
(C) Statement (I) is true but Statement (II) is false
(D) Statement (I) is false but Statement (II) is true
7.
Statement (I):
Statement (II):
Punch through results from the increased width of the collectorjunction transition region with increased collector-junction voltage.
Key:
Exp:
(A)
8.
Statement (I):
Punch through:
When the basecollector voltage reaches a certain (device specific) value, the basecollector
depletion region boundary meets the baseemitter depletion region boundary. When in this state
the transistor effectively has no base. The device thus loses all gain when in this state.
Statement (II):
Key:
(B)
9.
Statement (I):
Statement (II):
Key:
Exp:
(D)
10.
Statement (I):
Statement (II):
Key:
(A)
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Statement (I):
Statement (II):
Key:
(B)
12.
Statement (I):
The total energy of an energy signal falls between the limits 0 and
.
Statement (II):
Key:
Exp:
(B)
13.
Statement (I):
Statement (II):
Energy signal is a signal with finite energy and zero average power. Thus statement (I) and (II).
Both are correct but statement (II) is not giving explanation/reasoning to statement (I).
Key:
(A)
14.
Statement (I):
Statement (II):
Key:
Exp:
(B)
15.
Statement (I):
Statement (II):
Strong Dirichlet conditions states that the Fourier series exists if and only if the signal has a finite
number of maxima and minima (or) finite number of discontinuities.
Key:
(A)
Exp:
16.
Statement (I):
Statement (II):
Key:
(A)
Exp:
H.dl
j.ds
H.2r
I
r 2
R 2
Ir
2R 2
H r statement (I) is correct
EC-Objective Paper-I
17.
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I.H
Where I is the current, H is
t
the magnetic field strength, t is the thickness of probe and RH is the
Hall constant.
Statement (I):
Statement (II):
Key:
(C)
Exp:
VH
BI
W
1
RH
So, VH R H .
BI
W
B H
Hall Effect measures density of the carries, and their sign (whether electron (or) holes)
18.
Statement (I):
Statement (II):
Key:
(A)
19.
Statement (I):
Statement (II):
Key:
Exp:
(A)
It is given that the limiting error of power is Power is 1.5%and
Current is 1.0%
P
so the limiting error will be 1.5 2 1.0 % 3.5%
I2
Statement (I):
Integrating DVM measures the true average value of the input
voltage over a fixed measuring period.
R
20.
Statement (II):
Key:
(B)
21.
Measurement of pressure can be done by using wire, foil or semiconductor type Strain
Gauges. The disadvantage of the semiconductor type of strain gauge compared to other
two is in terms of
Key:
(C)
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22.
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1
x T t e jko t dt
(D)
Exp:
Consider x S k
(B) Complex
(D) Imaginary
T 2
1
x T t e jk0 t dt
T T 2
1
jk t
x T t e 0 dt
T 0
T 2
(C) Real
T 2
x t e
T
jk0 t
dt
x T t is odd, x T t x T t
x s k
x s k
1
T
T 2
2 j
T
jk0 t
e jk0 t x T t dt
T 2
sin k t x t dt
0
Thus x s k is imaginary.
23.
Consider a continuous time period signal x(t) with fundamental period T and Fourier
series coefficient X[K]. What is the Fourier series coefficient of the signal
y t x t to x t to ?
Key:
Exp:
(A) .2cos Kt o X K
T
(B) 2sin Kt o X K
T
(C) e t o X K et o X K
(D) e t o X K et o X K
(A)
y(t) = x(t-t0) + x(t+t0)
FS
x t
x k
e jk0 t 0 e jk0 t 0
Fourier series of y t 2x k
2
2x k cos k0 t 0
2
2x k cos kt 0
T
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3.
1
j 1
j 12
1
j 1 j 2
Key:
(D)
25.
(B) Energy
(C) Charge
Key:
(C)
Exp:
26.
(B) p i n
(C) p p n
(D) 1, 2 and 3
(D) Power
(D) i p n
Key:
(A)
27.
Consider two infinite duration input sequences x1 n , x 2 n . When will the Region of
(A)
Exp:
For a finite duration sequence the ROC will be entire Z-plane except z = 0 and/or Z .
28.
If the lower limit of Region of Convergence (ROC) is greater than the upper limit of
Key:
Exp:
(A) Converges
(B) Zero
(C)
z
1
2
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29.
For a random signal (continuous time) x(t) defined for t 0, its probability density
function (pdf) at t = to is such that
(A) It is non-negative and its integral
(B) Need not be non-negative, but integral equals 1
(C) It is non-negative, but integral is not 1
(D) None of the above
Key:
(D)
30.
The
response
as y t t.e
Key:
j2t
of
j2t
system
to
complex
input
x t e j2t
is
specified
. The system
(B)
x t e2 jt ; y t te2 jt e2 jt
Exp:
31.
The rise time of the output response of a low pass filter circuit when a step input is
applied will be
(A) Proportional to the band width
(B) Inversely proportional to the band width
(C) Half the value of band width
Key:
1
2
(B)
tr
32.
(D)
0.35
Bandwidth
(B) x h m
(C)
2x
h m
2
(D)
x
h m
2
(A)
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33.
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R1 6
2I
(A) 2
Key:
Exp:
(B) 2.4
(C) 3.6
(C)
Since it is a dead network with dependent source to find V/I we have to connect an external source
and measure it writing nodal equation at node A
2I
1 1
V I
4
6 4
V
3.6
I
R2 4
34.
(D) 10
Ri 6
2I
Key:
(C)
35.
For the R-L circuit shown, the current i(t) for unit step input voltage will rise to 0.63 in
(A) 1s
(B) 2s
1H
(C) 0.5s
Vi t
(D) 1.5s
Key:
Exp:
I S
i1 t
1
S S 2
1 2 1 2
S S 2
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1
1 e2t u t
2
0.63 0.5 1 e 2t
it
1.26 1 e 2t
e 2t 0.26
No value of t will satisfy this equation
36.
10 V
Key:
Exp:
3A
(A) 2A
(B) 0.6A
2i x
(C) 2.6A
(D) 1.4A
(D)
Writing nodal equation A
10
1 1
VA 3 2i x
2
2 1
10 VA
and i x
2
VA 10 2i x
Solving equation (1) and (2)
ix = 1.4A and VA = 7.2V
37.
When the frequency of the applied voltage (sine wave) across an inductor is increased
then the current will
(A) Decrease
Key:
Exp:
(B) Increase
(D) Be zero
(A)
VL
jL
1
IL
IL
38.
A series resonant circuit is tuned to 10 MHz and provides 3-dB bandwidth of 100 kHz.
The quality factor Q of the circuit is
(A) 30
Key:
(B) 1
(C) 100
(D) 10
(C)
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Exp:
f0 = 10MHz
B.W = 100 kHz
f0
Q
We know B.W
39.
f0
10 106
100
BW 100 103
In the figure, initial voltage on C is Vo. S is closed at t = 0. The IL for t > 0 is___________
Where 0 2
1
LC
IL
Key:
Exp:
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Vo
(B) o Vo sin o t
(C) o Vo sin o t
(D)
Capacitor has initial voltage V0
Inductor has initial current 0
Drawing the Laplace equivalent circuit for closed switch
I L s
V0
S SL
SC
V0
1
S2 L
C
V0
1
L S2 1
LC
1 LC
V0
C 1 LC
LC
V0
2
2
L
L
1
S2 1
S2
LC
LC
1
substituting 0
LC
IL t 0cV0 sin 0 t
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(B) 15
(C) 16
(D) 17
* It have 8 tress
AA T Number of possible treesin graph
1 0 1
1 1 0 0 1 1 1 0
A.A T 0 1 1 0 0 0 1 1
1 0 1 1 0 0 0 1
1 0 0
3 1 1
1 2 1
1 1 3
A.A T 15 4 3 8
41.
The antenna efficiency of a 8 long dipole antenna is 89.159%. The equivalent loss
resistance of the antenna is
(A) 1.5
Key:
(A)
Exp:
(B) 15
(C) 12.33
(D) 125
R rad
100
R rad R loss
dl
R rad 802
R rad
1
802
8
12.33
89.159
12.33
100
12.33 R loss
42.
A small elemental wire antenna is excited with a sinusoidal current of frequency 1 MHz
The induction field and radiation field are at equal distance d from the antenna. The value
of d will be nearly
(A) 300
Key:
(B) 50 m
(C) 150 m
(D) 20 m
(B)
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6
3 10
300
106
300
l
50m
6
l
43.
Error caused by the act of measurement on the physical system being tested is
(A) Hysteresis error (B) Random error
Key:
(D)
44.
(B) 0.05 V
(C) 0.045 V
(D) 0.9V
Key:
(C)
45.
A 1k resistor with an accuracy of 10% carries a current of 10 mA. The current was
measured by an analog ammeter on a 25 mA range with an accuracy of 2%. The
accuracy in calculating the power dissipated in the resistor would be
(A) 4%
Key:
Exp:
(B) 12%
(C) 15%
(D) 20%
(D)
R 1 10%
I 10mA
Meter specification 25 2% 25 0.5
It means the meter will introduce a constant error of 0.5 mA, since meter error is correct. F.s.v
which is constant.
So the current range would be
I 10 0.5 10 5%
P = I2R
So the error of power 2 5 10 % 20%
46.
2.
3.
It is due to the exciting mmf required by the primary winding to produce flux
4. It is due to the non-linear relation between flux density in the core and magnetizing
force
Which of the above statements are correct?
(A) 1, 2, 3 and 4
Key:
( A)
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The different torques acting on the coil of a moving coil of a moving coil instruments are
(A) Deflecting torque and control torque
(B) Deflecting torque and damping torque
(C) Control torque and damping torque
(D) Deflecting torque, control torque and damping torque
Key:
Exp:
(D)
48.
(A) 3
(B) 0.33
(C) 300
(D) 0.03
Key:
(A)
49.
Key:
(C)
Exp:
PZload I
(B) j3
(C)
4 j3
(D) 4 j3
2
load
R load
VS
4
ZS 4 j3
So the power to be maximum ZS 4 j3 should minimum among the option (4-j3) satisfies
this.
50.
Key:
(D)
51.
True RMS voltmeter is ideal for the measurement of RMS value, because it employs
(A) Feedback
Key:
(C)
52.
Key:
(C)
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Key:
Exp:
(B)
54.
For displaying high frequency signals, cathode ray tube should have
(D)
55.
Key:
Exp:
(D)
Peak-peak amplitude in 6-cm
Vp p 30
Vp 15
Vrms
Vp
2
10.6
Type-II
Vpp 5V cm 6cm 30V
30
15V
2
15
10.6
2
Vpeak
Vrms
56.
Ramp type
2.
3.
4.
5.
(C)
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Which of the following flow meters is capable of giving the rate of flow as well as the
total flow?
(A) Nutating disc flow meter
(B) Electromagnetic flow meter
(C) Orifice meter
Key:
(B )
58.
Which of the following types of transducers can be used for the measurement of the
angular position of a shaft?
1. Circular potentiometer
2.
LVDT
3.
e-pickup
4.
Synchronal pair
(A) 1 and 2
(B) 2 and 3
(C) 1 and 4
(D) 3 and 4
Key:
(C)
59.
Which one of the following plays an important role in the fine recording of audio signals
on magnetic tape recorder?
(A) Width of the air gap of the recording head
(B) Thickness of the tape used for recording
(C) Material of the recording head
(D) Speed of the motor
Key:
(D)
60.
A resistance strain gauge with a gauge factor of 3 is fixed to a steel member subjected to a
stress of 100 N mm2 . . The Youngs modulus of steel is 2 105 N mm2 .
(A) 0.1%
Key:
Exp:
(B) 0.15%
(C) 1.0 %
(D) 1.5%
(B)
R
G R
Strain
Strain
stress
young modulus
100
5 104
2 105
R
G 5 104 15 104
R
R
100 0.15%
R
61.
Key:
The radius of the first Bohr orbit of electrons in hydrogen atom is 0.529 A. What is the
radius of the second Bohr orbit in singly ionized helium atom?
o
(A) 1.058 A
(b) 0.264 A
(C) 10.58 A
(D) 0.0264 A
( A)
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Radius of Bohrs orbit in hydrogen and hydrogen like species can be calculated by using formula
n2h2
1
2
2
4 me Z
n2
0.529 A
Z
So r n 2 2 0.529A
1.058A
62.
For which one of the following materials, is the Hall coefficient closest to zero?
(A) Metal
(B) Insulator
(D) Alloy
Key:
(A)
63.
Copper has a resistivity of 17 109 m. what is the end to end resistance of a copper
strip, 2 cm long with cross sectional dimensions 5mm 1mm?
(B) 34
Key:
Exp:
(B) 68
(C) 34 m
(D) 68 m
(B)
L
A
Resistivity =17 109 m
R
L 2 102 m
A 5 106 m 2
R
64.
17 109 2 102
68
5 106
At temperature of 298 Kelvin, Silicon is not suitable for most electronic applications, due
to small amount of conductivity. This can be altered by
(A) Gettering
Key:
(B) Doping
(C) Squeezing
(D) Sintering
(B)
Exp:
65.
The energy gap in the energy band structure of a material is 9 eV at room temperature.
The material is
(A) Semiconductor (B) Conductor
(C) Metal
(D) Insulator
Key:
Exp:
(D)
A material with fully occupied or empty energy bands is then an insulator. This is the case when
the gap energy exceeds ~9eV, because for such gaps
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N type
2.
P type
3.
Intrinsic
4.
Extrinsic
(A) 1 and 4
(B) 2 and 4
(C) 1 and 3
Key:
Exp:
(B)
67.
(D) 2 and 3
Silicon/Germanium is doped with P-type (or) n-type materials it becomes extrinsic semiconductors
P-type materials are: Gallium
Indium
Boron
Aluminum
n-type materials are:
Phosphorous
Arsenic
Antimony
1.
Phosphorus
2.
Arsenic
3.
Boron
4. Aluminium
Which of the above are correct?
(A) 1 and 2
(B) 2 and 3
(C) 3 and 4
(D) 1 and 4
Key:
Exp:
(A)
68.
Silicon/Germanium is doped with P-type (or) n-type materials it becomes extrinsic semiconductors
P-type materials are: Gallium
Indium
Boron
Aluminum
n-type materials:
Phosphorous
Arsenic
Antimony
(B )
By Einsteins Relation ship
Dn Dp
VT Thermal voltage
n p
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Key:
(B)
70.
(B) 2 only
Key:
(D)
71.
A 2-port Network is shown in figure. The parameter h21 for this network can be given by
I1
RI2
I2
V1
V2
(A) 1 2
Key:
(A)
Exp:
h 21
I2
I1
(B) 1 2
I1
V2 0
(D) 3 2
I2
I R
I2 I
2R
I
2 1 2
I1
72.
(C) 3 2
V1
: Yellow
: Violet
: Red
: Silver
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Exp:
(B)
Band colour code
Black 0
Brown 1
Red 2
Orange 3
Yellow 4
Green 5
Blue 6
Violet 7
Grey 8
White 9
Gold 0.1
Silver 0.01
(C) 6.8 k 5%
(D) 46 k 2%
Tolerance
1%
2%
5%
10%
2
So, 47 10 10%
4.7k 10%
73.
Which one of the following materials has temperature coefficient of resistance very close
to zero?
(A) Manganin
(B) Nichrome
(C) Carbon
(D) Aluminum
Key:
(A)
74.
10
10
C
10
(A) 10
Key:
Exp:
10
(B) 20
10
(C) 30
(D) 40
(C)
Between A and D if we are finding Required no current will pass through 10 which is
connected to B and C.
So Required = 10+[(10+10)//(10+10)]+10 = 10+10+10 30
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Seven resistances each of 5 are connected as shown in the figure. The equivalent
resistance between the points A and B is
5
5
5
5
A
(A) 3
Key:
Exp:
(B) 11
(C) 15
(D)
RAB = 2.5 + [6.25//7.5] =7 ohm
10
5
16
A
B
1.25
2.5
2.5
A
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76.
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C
(A) 2F
Key:
Exp:
(B) 3F
(D)
(C) 4F
(D) 5F
2C
5
C
3
5
CAB 3 5f
3
77.
3
2j, the value of R and L
2
Vs
4
and
5
5
(C) 4 and 3
(A)
Key:
16
16
and
3
5
(D) 3 and 4
(B)
(D)
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Exp:
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2
Vrms
Pcomplex
Z*
Z*
2
Vrms
Pcomplex
5 2
1.5 2 j
12.5
3 4i
1.5 2 j
Z 3 4 j R jL
so R 3
L 4 1
78.
(D) Resistivity
Key:
(C)
Exp:
loss parameter
79.
The number of holes in and N-type silicon with intrinsic value 1.5 1010 cm3 and doping
concentration of 1017 cm3 , by using mass-action law is
(A) 6.67 106 cc
Key:
Exp:
(D)
By mass action law
n.p n i2 , In N type, N D n i
n n ND
Pn
2
i
n
ND
2.25 1020
1011
2.25 103 cm3
80.
Key:
(B) 50 Hz
(D)
Exp:
A tunnel diode is best suited at very high frequencies.
(Microwave frequencies)
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81.
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In a singly connected network if there are b number of branches and n number of nodes,
then the number of independent meshes M and independent nodes N are respectively.
(A) n and b
(B) b n 1and n 1
(C) b n and b
(D) b n 1and n 1
Key:
(B)
82.
For a symmetric lattice network the value of the series impedance is 3 and that of the
diagonal impedance is 5 , then the Z-parameter of the network are
(A) Z11 Z22 2 and Z12 Z21 1
2
Key:
(B)
Exp:
Z11 Z12
Z b Za
2
Z Za
Z12 Z21 b
2
Za
Zb
Zb
Za 3 series arm
Zb 5 diagonal
Za
so
Z11 Z22 4
Z12 Z21 1
83.
I1
I2
V2
V1
1
(A) Z11 Z, Z22 Z, Z12 Z21 Z
2
(B) Z11 1 Z, Z22 1 Z, Z12 Z21 1 Z
Key:
(C)
84.
Key:
(B)
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Exp:
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Y s 1 S
Y s Y1 S Y2 S
Z1 S
Z2 S
1 1
1 1S
Z1 1, Z2 1F
As admittance are added only when there are in parallel so we can say 1 & 1F are in parallel
85.
The solutions to many problems involving electric fields are simplified by making use of
equipotential surfaces. An equipotential surface is a surface:
1.
2.
3.
4.
86.
(C) 1, 2, 3 and 4
(A)
An equipotential surface.
1.
2.
3.
A charge Q is divided between two point charges. What should be the values of this
charge on the objects so that the force between them is maximum?
Q
3
(A)
Key:
(B)
Exp:
(B)
Q
2
1 Q1Q 2
40 R 2
(C)
Q 2
Q1
(D) 2Q
Q2
Q1 Q 2 Q
F
1 Q1 Q Q1
40
R2
dF
1
Q1 (1) Q Q1
dQ1 4 0 R 2
dF
0
dQ1
Q
2
Q
Q2
2
Q1
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87.
What is the force developed per meter length between two current-carrying conductors 10
cm apart and carrying 1000 A and 1500 A currents, respectively?
(A) 3N
Key:
Exp:
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(B)
N
3
(C) 2N
(C)
N
2
(C)
From Amperes force law
0 .I1.I 2
2r
4 107 10 15 102
F
2 102
F 3N
F
88.
Key:
Exp:
(B) 30.3 kW
(C) 40.5 kW
(A )
P50 20kW
I50 2
(D) 45.0 kW
Practical D.C
current source
20k
400
50
I50 20A
50
1000
20 __(1)
R
P200 20k
20k
100
200
10A
I 2200
I 200
200
So, by K.C.L
2000
10 __(2)
R
1000
10
R
R 100, I 30
So, by maximum power transfer theorem
30 A
100
VTh = 3000
RTh = 100
Pmax
9 106
22.5kW
4 100
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89.
Key:
Exp:
90.
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(B)
Since ammeter internal resistance is very low, if we connect it in parallel across the load then it
may damage and huge amount of current will flow through it. So its resistance should be increased
by connecting a high value of resistance in series.
A point charge is located at origin. At point (a, a), electric field is E1. At point a,a the
electric field is E2 and at a point a, a the electric field E3.
(A) E1 E2 0
(B) E1 E3 0
Key:
(C)
Exp:
1
Q
E1
.
aa x aa y
40 2 2a 3
E1 k aa x aa y
k
(B)
E1
( a,a)
(a,a)
E2
1
Q
4 0 2 2a 3
E 2 k aa x aa y
E 3 k aa x aa y
(0,0)
ax ay az
E1 E 3 k a 1 1 0
1 1 0
2 2
E3
E1 E 3 0
91.
( a, a)
q1
b
0
(A) tan 1
Key:
q2
(B) tan 2
(C) tan 3
(D) tan 4
(B)
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Exp:
E1
E2
1 2
1 1
ax
2a x
4 0 8
4 0 2
1 1
ay
4 0 1
1 1
ay
40 1
1 1
ax ay
40 2
tan
Ey
Ex
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E2
(0,1)
(2,1)
2c
E1
1c
(2, 0)
tan 2
92.
100
cos 109 t 6z u p V m
Key:
Exp:
(B)
(D)
(A)
100
sin 109 t 6z u p A m 2
(C)
0.9
sin 109 t 6z u p A m 2
216
cos 109 t 6z u p A m 2
(C)
Displacement current density
Jd
D
E
0
t
f
J d 8.854 1012
Jd
93.
116
sin 109 t 6z u p A m 2
100
sin 109 t 6z 109 u p
0.9
sin 109 t 6z u p
2. Both electric and magnetic field vectors are parallel to each other and perpendicular
to the direction of propagation of waves
3. The energy in electromagnetic wave is divided equally between electric and magnetic
vectors
4. Both electric and magnetic field vectors attain the maxima and minima at the same
place and same time
Which of the above properties of electromagnetic waves are correct?
(A) 1, 2 and 3 only
Key:
(D) 1, 2, 3 and 4
(B)
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94.
(B) Diffraction
Key:
Exp:
(D)
EM waves are orthogonal due to polarization
95.
In an pn junction diode,
(A) 2.3mV
(A)
Exp:
dV
2.3mV C
dT
(C) Interference
(D) Polarization
dV
is equal to
dT
(B) 3.5 mV
Key:
96.
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(C) 10.0 mV
(D) 12.5 mV
Key:
(A)
Exp:
(B) +j
(C) 1
(D) 0
z L z 0 J50 50
z L z 0 J50 50
J 1
.
J 1
1
VSWR(s)
1
1
97.
Key:
(B)
98.
The cut-off frequency of a rectangular waveguide in dominant mode is 10 Hz. The width
of the wave guide is
(A) 2 cm
(B) 1.5 cm
(C) 1 cm
(D) 2.5 cm
Key:
(B)
Exp:
fc
c
2a
10 109
3 108
2a
3 108
2 1010
a 1.5cm
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Scattered wave
4 km
Incident wave
Receiving antenna
(A) 1.394 kW
Key:
Exp:
(B) 2.046 kW
3 km
Transmitting antenna
(C) 1.038 kW
(*)
No answer is matching
Targ et
f 5GHz
3 108
6 102 m
9
5 10
G t 34dB 103.4
(D) 3.46 kW
5km r2
4km r1
G r 22dB 102.2
4 4r1r2 Pr
Prad
GtGr
2
10 102.2
6 102
2.4 Receiving
antenna
Prad 1846 W
3.4
Prad 1.846kW
100.
Transmitting
antenna
Key:
(B)
101.
Key:
(C)
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Key:
(C)
103.
Thermal runaway is not possible in FET because, as the temperature of FET increases
(A) The drain current increases
(B)
104.
2.
3.
4.
(B) 1, 3 and 4
(C) 2, 3 and 4
(D) 1, 2 and 3
(D)
VCE1
VBE
B
p
n
C
Weff
Weff
n
VBE
B
depletion
regions
VCE2
105.
Key:
(A)
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In a thyristor, the minimum current required to maintain the device in the ON state is
called
(A) Latching current
(B) Ignition current
(C) Holding current
Key:
(C)
Exp:
Holding current may be defined as the minimum anode current required to maintain the
thyristor in the on state without gate signal below which the thyristor stops conduction.
Latching current is the minimum anode current required to maintain the thyristor in the on
state with at gate signal. Here we should note that even the thyristor anode current falls
below latching current (once it is turned on and gate signal is removed) thyristor does not
stop conduction
107.
The zeners incorporated within the encapsulations of some MOSFETs are meant for
(A) Reducing the cost
(B) Biasing the gate circuit
(C) Self-protecting the device against transients
(D) None of the above
Key:
(C)
108.
(B) Paramagnetic
(C) Diamagnetic
Key:
Exp:
(A )
The opposition that a material presents to magnetic lines of force is called reluctance.
Most off the magnetic materials( paramagnetic, ferromagnetic etc) reluctance is low, so
Diamagnetic have High Reluctance
109.
When UJT is used for triggering and SCR, the wave-shape of the signal obtained from
UJT circuit is
(A) Sine wave
(B) Saw tooth wave
(C) Trapezoidal wave
Key:
(B)
110.
Key:
(B)
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Key:
(C)
112.
Key:
(D)
113.
Key:
(C)
114.
Key:
(A)
115.
1
h n u n , then the system is
2
(A)
Exp:
1
h n u n is Right sided sequence thus it is causal
2
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1
h n
n 0 2
1
1
1
2
116.
In the first Cauer LC network, the first element is a series inductor when the driving point
function consists of a
(A) Pole at
(B) Zero at
(C) Pole at 0
(D) Zero at 0
Key:
(A)
117.
Key:
(B)
Exp:
j0 n
Key:
(B)
119.
Key:
Exp:
(B)
y(t) = t x(t) + 4
: system A
D define x1 (t) = x (t- ), obtain y1(t) = tx1(t) + 4
y1 t tx t 4
2) Obtain y (t-T) = (t-T) x (t-T) + 4
y1 t y t T System A is time-variant
Y [n] = x2[n]: system B
1) Define x[n] = x [n-N0], obtain y1 n x1 n
2
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y1 n x 2 n N0
2) Obtain y [n-N0] = x2 [n-N0]
y1 n y n N0 , System B is time-invariant
120.
x n
Accumulator
System
Backward
Difference
System
z n
When these two systems are cascaded as in figure, the impulse response of combined
system with output z[n] is
(A) Unit impulse sequence
(B) Unit step sequence
(C) Unit ramp sequence
Key:
(A)
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