AKT MEMORIAL COLLEGE OF ENGINEERING AND TECHNOLOGY

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

YEAR/SEM: II/02
EC6401-ELECTRON DEVICES

UNIT-I : SEMICONDUCTOR DIODE

PART-A
1. Sketch the VI characteristics of the PN junction diode.(AM2015)

2. Define diffusion current and drift current.(ND 2014).

Diffusion Current: A concentration gradient exists, if the number of either electrons or

holes is greater in one region of a semiconductor as compared to the rest of the region.
The holes and electron tend to move from region of higher concentration to the region of
lower concentration. This process in called diffusion and the current produced due this
movement is diffusion current.

Drift Current: When an electric field is applied across the semiconductor, the holes
move towards the negative terminal of the battery and electron move towards the positive
terminal of the battery. This drift movement of charge carriers will result in a current
termed as drift current.

3. Define Mass action Law.(MJ 2014)(ND 2010)

Under thermal equilibrium, the product of number of holes and number of electrons is
constant and is independent of the amount of donor and acceptor impurity doping. This relation
is given by, n.p=ni2 , Where n=free electron concentration, p=hole concentration, n i = Intrinsic
concentration.
4. What is the principle operation of a PN junction diode in reverse bias condition (MJ 2014).

When positive terminal of the external supply is connected to N type and negative
terminal to P type then the PN junction is said to be in reverse bias. Under reverse biased
condition the PN region offers a very high resistance and a small amount of current flows
through it.
5. Define an Electron volt.(MJ 2014, R2008)
An unit of energy equal to work done on an electron in accelerating it through a potential
difference of one volt.1eV=1.6*10-19 J.
6. Write any two applications of Zener Diode.(MJ 2014 R2008).
Voltage regulator.
Square wave generation
Clippers in wave-shaping circuits.
Fixing reference voltages in electronic circuits suc as power supplies and
transistor biasing.
7. Draw energy band diagram of semiconductor.(ND 2013)

8. Define Diffusion capacitance.(ND 2013)(ND 2010,2012)

An incremental capacitance which is introduced at the minority carrier injection, is
defined as the rate of change of injected charge with applied voltage. This capacitance is called
as Diffusion capacitance or Storage capacitance.
9. Mention the two types of junction capacitances. (MJ 2013)
The two types of junction capacitances are: (i) Transition Capacitance
(ii) Diffusion Capacitance.

10. Distinguish between intrinsic and extrinsic semiconductors.(MJ 2013)

Intrinsic Semiconductor
Pure form of semiconductors are said to
be intrinsic semiconductor.

Extrinsic Semiconductor
Certain amount of impurity atom is
added the pure semiconductor is called
as Extrinsic or impure Semiconductor.

Eg: Germanium, Silicon.

Eg:Arsenic, Antimony

11. Give the expression for transition capacitance and diffusion capacitance of a PN diode. (MJ
2010)

12. Define avalanche breakdown.(MJ 2010)

When bias is applied , thermally generated carriers which are already present in the diode
acquire sufficient energy from the applied potential to produce new carriers by removing valence
electron from their bonds. These newly generated additional carriers acquire more energy from
the potential and they strike the lattice and create more number of free electrons and holes. This
process goes on as long as bias is increased and the number of free carriers gets multiplied. This
process is termed as avalanche multiplication. Thus the breakdown which occurs in the junction
resulting in heavy flow of current is termed as avalanche break down.
13. Define forbidden gap.(ND 2009)
The energy gap between Conduction band and Valence band is called as Forbidden
Energy Gap. The Forbidden Energy gap for (i) Conductor = 0eV
(ii) Insulator=15eV
(iii) Semiconductor=1eV

14. Why does reverse saturation current vary with temperature in diodes?.(ND 2009)

15. What is barrier potential?

Because of the oppositely charged ions present on both sides of PN junction an electric
potential is established across the junction even without any external voltage source which is
termed as barrier potential.
16. Give the diode current equation.
The diode current equation relating the voltage V and current I is given by

Where I diode current

Io diode reverse saturation current at room temperature
V external voltage applied to the diode
- a constant, 1 for Ge and 2 for Si
VT = kT/q = T/11600, thermal voltage
K Boltzmanns constant (1.38066x10^-23 J/K)
q charge of electron (1.6x10^-19 C)
T temperature of the diode junction .
17. Write the application of PN diode.

Can be used as rectifier in DC Power Supplies.

In Demodulation or Detector Circuits.

In clamping networks used as DC Restorers

In clipping circuits used for waveform generation.

As switches in digital logic circuits.

18. Give the expression for drift current density.

The Drift current density due to electrons is given by,
Jn = q n n E
Where,
Jn - drift current density due to electron
q- Charge of electron

n - Mobility of electron
E - applied electric field
The Drift current density due to holes is given by,
Jp = q p p E
Where,
Jp - drift current density due to holes
q - Charge of holes
p - Mobility of holes
E - applied electric field
19. Give the expression for diffusion current density due to electron.
The diffusion current density due to electrons is given by,
Jn= q Dn (dn / dx)
Where
Jn - diffusion current density due to electron
q - Charge of an electron
Dn diffusion constant for electron
dn / dx concentration gradient
20. Give the expression for diffusion current density due to holes.
The diffusion current density due to holes is given by,
Jp= - q Dp dp / dx
Where Jp - diffusion current density due to holes
q - Charge of a hole
Dp diffusion constant for hole
dn / dx concentration gradient.
21. Define Diffusion Length.
The average distance that a charge carrier can diffuse during its lifetime is called
Diffusion Length. The expression is given by,
L=D, Where is called Carrier life time.
22. Draw the energy band structure of Insulator and Conductor.

23. Define Carrier life time.

The time for which on an average , a charge carriers will exist before recombination with
a carrier of opposite charge is carrier life time.
24. What is meant by Static resistance?
The static resistance of a diode is the ratio of voltage to current. It is denoted by R. At
any point on the current-voltage characteristics of the diode, static resistance R equals to the
reciprocal of the slope of the line joining the operating point to the origin.
25.Define Zener breakdown.
When doping is heavy then in reverse bias even before the minority charge carrier
acquire sufficient velocity the breakdown occurs this kind of breakdown is called Zener
Breakdown.

PART-B
1. (i) Derive the expression for drift current density.(AM 2015)
(ii) Determine the ideal reverse saturation current density in a silicon PN junction at
T=300K. Consider the following parameters in the silicon PN junction : Ne=Nd =1025cm-5,
nl=1.5*1010 Cm-3, Dn=25 cm2/s, Tpo=Tno=5*10-7s, Df =10 cm2/s, r=11.7. Comment on the
result.
2. (i) Derive the expression for diffusion current density.(AM 2015)
(ii) Describe the deviation of V-I characteristics of PN junction diode from its ideal.
3. (i) Explain the operation of PN junction under zero voltage applied bias condition and
derive the expression for built in potential barrier.(ND 2014).
(ii) Calculate the built in potential barrier in a PN junction. Consider a silicon PN junction
at 300K with doping concentration Na=1*1018Cm-3 Nd=1*1015cm3.Assume ni=1.5*1010cm-3.
4. (i) Explain the basic structure of the PN junction.(AM 2014)
(ii) Write short notes on diode switching characteristics.
5. Explain the theory of PN junction diode and derive its diode current equation.(AM2014).
6. Explain and derive current components and switching characteristics of diode.(AM2014).
7. Explain the working of a PN junction diode derive the expression for the current through a PN
junction diode and explain its VI characteristics.(R8, AM 2014)

8.(i) Define the following with respect to a diode.(AM 2014)

a) Cutt in voltage.
b) Reverse breakdown voltage.
c) Diffusion capacitance.
d) Transition capacitance.
e) Intrinsic and extrinsic semiconductors.
(ii) Distinguish between Zener breakdown and avalanche breakdown.(AM 2013, 2014, ND 2012)
9. Draw and explain Zener diode and its characteristics.(ND 2013, 2012)
10. (i) Explain the theory of PN junction diode along with its VI characteristics.(MJ 2013)
(ii) Discuss the effect of temperature upon the characteristics of PN junction diode.
11. Derive the PN diode current equation from the quantitative theory of diode currents.(ND 2012)
12.(i) State continuity equation and prove that the concentration of changes is independent of time
with zero electric field.(ND 2010)
(ii) With neat diagram, explain the formation of PN junction diode and derive its depletion width.
13.(i) What is the breakdown mechanism found in Zener diode? Explain it with neat diagram. (ND
2010)
(ii) Write detailed notes on space charge and diffusion capacitance.
14.(i) Derive the diode current equation.(MJ 2010)
(ii)Explain how the depletion region at PN junction is formed and Explain with relevant sketches
for charge density, electric field intensity and potential energy barriers at the junction.