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Diode Characteristics
dV R f
circuit with I = 0 and for V < Vg .
Vg is also known as threshold
voltage or knee voltage of the
Vg V
diode.
For V >Vg , diode resistance is Rf = dV/dI. Diode equivalent circuit
is shown at top for forward bias.
For a silicon diode,
For a germanium diode,
bkdas
Application of Diodes
Electronic Materials & Components (ECL102)
bkdas
Photodiode
light
p
Iph
ei
h+
Photodiode
light
I
h+
_
p
e-
V
Dark
Iph
Photocurrent,
Iph
qV
bkdas
Zener Diode
+
RL
Unregulated i
R
Voltage, Vs
bkdas
I
Zener Breakdown
Voltage, -VZ
forward
current
Zener Diode
IL
No regulation if RL = 0 (making
Vout = 0) giving maximum load
Vout
current.
For regulation we need a
minimum load resistance, RL min.
RL
Unregulated i
Z
Voltage, Vs
Vout ILR L
For breakdown ,
or , R L
IL
bkdas
R L Vs
RL R s
V VZ
VZ
s
IL max
R L min
Rs
R L Vs
VZ
RL R s
R s Vs
R L min
Vs VZ
Rs
1.9
GaAs
x=0.35
AlAs
Ga1-xAlxAs:
GaAs & AlAs have almost same lattice parameter least lattice
mismatch
Direct and Indirect band gap varies with x at different rates.
Eg increase on increasing x
Between x = 0 to 0.35, band gap is direct.
At x=0.35, band gap changes from direct to indirect
Eg, eV
Material
Band gap
(eV)
LED wavelength
(m)
Emission
Region
GaAs
1.43
0.867
IR
GaP
2.26
0.549
Green
GaAs0.6P0.4
1.92
0.645
Red
Ga0.7Al0.3As
1.9
0.652
Red
GaAs0.5P0.5:
N
2.1
0.590
Yellow
GaN
3.4
0.364
Blue
In1-xGaxAs
0.8
1.55
IR
bkdas
RL
i
Vm
10
i
i
i Im sin
bkdas
Vm
RL
for 0
for 0
Vm
Im
sin ce Vm Vg
RL R f RL R f
0
Vm Vg
i
Im
11
i
Im
DC current is the current through
1 2
1
1
Im sind 0.d
Idc
i d
Im sind
2
2 0
2 0
I
So, Idc m
AC Current (Irms):
RMS AC current is the current through the load resistance, R L
measured by an AC 1ammeter and is given
by
1
1
2
2
2
2
2
1 2
1 2
I
2
2
Irms
i d 2 Im sin d 2m sin d
2 0
0
0
Im
So Irms
2
DC Current (Idc):
12
ImRfsin
V
m
1 2
1
Vdc
)
d
I
R
sin
Vm sin d
m f
2 0
2 0
Rf
RL
1
2ImR f 2Vm 1 ImR f Vm
2
1
Since , Vm Im R f R L , Vdc ImR f ImR f ImR L
Vdc
Vdc
bkdas
13
1 2
iid
2 0
R f RL 2
1
Pi
i
(
R
R
)
id
i d
f
L
2 0
2 0
Pi
Rf
i
RL
Pi R f R L Im
sin 2 d
2 0
2
R f R L
Pi Irms
bkdas
14
V
m
bkdas
15
Regulation (%):
16
'
Irms
V'
'
'
or rms where Irms
& Vrms
rms value of ac component
Idc
Vdc
'
Irms
1
2
2
i( ) Idc d
0
Since Idc
'
Irms
1
2
1 2
i( )d by definition ,
2 0
1 2 2
i ( )d I2dc
2 0
'
2
So, Irms
Irms
I2dc
bkdas
17
'
Irms
Idc
'
2
Irms
Irms
I2dc
So, r
2
Irms
I2dc
Idc
2
Irms
1
I2dc
So, r
bkdas
Irms Im / 2
1.57
Idc Im / 2
2
Irms
1 1.57 2 1 1.21
I2dc
18
AC input power
Pi
I
I
Vm
We know , Idc m and Irms m where Im
2
R f RL
I2
Vm2 R L
1
Pdc I2dcR L m2 R L 2
R L R f 2
2
R L R f
Pi Irms
So,
2
2
Im
Vm2
R L R f Vm R L R f2
4
4R L R f
4R L R f
Pdc
Vm2 R L 4R L R f 4
RL
1
2
2
Pi
R L R f 2
Vm2
RL R f
Re ctificatio n Efficiency ,
bkdas
RL
RL i
uo
D2
i2
o
Vm
D1
20
10
RL i
uo
D2
i1
Im
i2
i2
Im
Im
D1
i = i1 +i2
bkdas
21
Idc
2Im
and Irms
Im
2
where Im
Vm
R f RL
2
rms
2
dc
I
I
1,
Im
Irms
Since
2 1.11, r 1.112 1 0.482
2Im
Idc
Ripple factor has dropped from 1.21 for HWR to 0.482 for FWR.
DC Output (Vdc):
Vdc
bkdas
2Vm
IdcR f
2Vm
2VmR f
2Vm R L R f
(R L R f )
RL R f
22
11
Vm
RL i
Vm
uo
PIV = 2 Vm
D2
Regulation (%):
% regulation
bkdas
i1
i2
x100 %
Vfull load
2I R
2VmR L
2Vm
2VmR f
2Vm
Vload IdcR L m L
IdcR f
(R f R L )
(R f R L )
2 Vm
2 VmR L
(R f R L )
R
% regulation
x100 % f x100 %
2 VmR L
RL
(R f R L )
23
AC input power
Pi
2Im
I
We know , Idc
and Irms m
So,
RL
Pdc
Vm2 R L 2R L R f 8
RL
4
2
2
Pi
R L R f 2
Vm2
RL R f
Re ctificatio n Efficiency ,
bkdas
Vm
R f RL
Vm2 R L
R L R f 2
2
2
Vm2
2
R L R f Im R L R f Vm R L R f2
Pi Irms
2
2R L R f
2R L R f
Pdc I2dcR L
2
4Im
where Im
RL
24
12
Bridge Rectifier
i1
D3
D2
Vm
D1
D4
25
Bridge Rectifier
bkdas
D3
D2
i1
i1
Im
RL
o
i2
Input voltage (i) is equal to the
transformer output. Bridge rectification
needs a smaller transformer than the FWR.
The circuit consists of four diodes D1, D2,
D3 and D4 connected in a bridge
i
configuration. Diodes D1 and D3 conduct
during first half cycle carrying current i1
and diodes D2 and D4 conduct during the
other half cycle carrying current i2. Output
voltage (o) appears across load
resistance, RL.
Im
Im
D1
D4
i = i1 + i2
26
13
Bridge Rectifier
i
D3
RL
o
D2
Vdc
2Vm
2IdcR f
and
2
Power input , Pi Irms
(R L 2R f )
bkdas
D1
D4
27
bkdas
(a)
RL
(b)
L
C
RL
(c)
From rectifier
RL
From rectifier
From rectifier
From rectifier
L
C1
C2
RL
(d)
28
14
RL
1
2 2
1
i(t ) Vm
C
sin(
)
where
tan
CR
L
R L2
bkdas
30
15
i(t ) Vm
1
2 C2 sin(t ) where tan CR L
R L2
Diode Conducting:
Cut-out
time
t1
2/
i
bkdas
I = transformer voltage
o = output voltage
sin(t 1 ) 0
t 1 n tan 1 CR L
31
Cut-in
time
bkdas
o (t ) Vm sin t 1 exp
CR L
At a time t2 called cut-in time, the diode will start conducting
since the transformer voltage, vi(t2) > vo(t2).
t t1
Cut-out
time
32
16
2/ t2
Vr
T2
T1
bkdas
2/
T1 T2
33
Vdc
2 3Vdc 4 3fCVdc 4 3fCR L
Idc
Vr
Vdc Vm
Vm
2
4fC
bkdas
Vr
34
17
Vr ripple voltage
bkdas
Vdc Vm
Idc T2
I
dc
C
2fC
Idc
1
Vm IdcR o where R o output resis tan ce
4fC
4fC
For low ripple, one must use high value filter capacitor.
No load voltage is Vm, but voltage under load will change less if C
is high.
Desirable features of use of capacitive filter are:
Low ripple
No voltage loss at high load current
base
collector
NdE
NaB
NdC
VBE
IB
IE
emitter
IC
VCB
18
BJT Structure
bkdas
37
IE
B
p-base
C
n - collector
E
n+ -emitter
IC>0
+
+
IB > 0
VBC < 0
VBE > 0
VBE > 0 & VBC < 0 B-E junction forward biased
B-C junction reverse biased
VBE > 0 injection of electrons from E to B
injection of holes from B to E
VBC < 0 extraction of electrons from B to C
extraction of holes from C to B
bkdas
Electron injected
into B is extracted
by C due to
reverse bias.
38
19
B
p
E
n+
IE
IC>0
electron flow
hole
flow
IB > 0
VBC < 0
VBE > 0
bkdas
39
bkdas
40
20
E (n+)
BJT Parameters:
C (n)
B (p)
electron flow
g
bkdas
IEN
injection efficiency
IEP IEN
41
IC
BIEN
Bg
IE IEP IEN
IC
IB
21
IEN
1 B
(IEP IEN )
B
I
BIEN
F C
IB IEP (1 B)IEN
F
VBC
IB
B
+
+
VBE
Bg
1 Bg 1
+
IC
VCE
IE
bkdas
IE IC IB
43
bkdas
IE
emitter
base
collector
NaE
NdB
NaC
p-n-p Transistor
IC
IB
VBE
VBE < 0 B-E junction is forward biased..
VBC > 0 B-C junction is reverse biased.
IB is negative.
IC is negative.
IE is positive.
VBC
44
22
Regime of Operation
VBE
VBC
IE
B
forward
active
IC
+
+
VBE
saturation
VCE
cut-off
reverse
VBC
IE
E
n-p-n transistor
bkdas
45
MOS Structure
Evac
Electronic Materials & Components (ECL102)
qs
qm
metal
+
+
+
metal
p-silicon
oxide
bkdas
Ef
Ev
+ ~9eV
oxide
Ec
Depletion layer
46
23
MOS Structure
Depletion Layer Formation:
+
+
oxide
p-silicon
In a metal-oxide-silicon
structure, a depletion
layer forms below the
metal gate as in M-S
structure. For p-type
silicon substrate, a
positive charge develops
on metal side and
depletion layer is
negatively charged.
bkdas
metal or
n+- polysilicon
Gate charge
47
MOS Structure
bkdas
48
24
MOSFET Transistor
G
D
gate
oxide insulator
Only for use of ITMU students
n
p
bkdas
49
MOSFET Transistor
Electronic Materials & Components (ECL102)
Vds
Id
Vgs>Vt
Id
Vgs > Vt
zero if Vgs < Vt
Vbs=0
Vds
x
50
25
MOSFET Transistor
Electronic Materials & Components (ECL102)
Id Vgs Characteristics :
Id = 0 for Vgs < Vt
Only for use of ITMU students
Id
0
0
bkdas
Vt
Vgs
51
NMOS Transistor
Vgs > Vt : Pinch-off
S
n+
n+
p-Si
bkdas
Vds = VgsVt
Inversion-layer
is pinched-off
at the drain end
52
26
NMOS Transistor
Electronic Materials & Components (ECL102)
Id
nCox W
2(V
L
gs
Vt )Vds Vds2 6
X 10-4
Vds = Vgd - Vt
2) Saturation Region:
Vds > Vgs Vt
IDsat
nCox W
2
Vgs = 2.5V
Vgs = 2.0V
Saturation
Linear
( VGS VT )2
Vgs = 1.5V
Vgs = 1.0V
0
cutoff
bkdas
0.5
1.5
2.5
Vds (V)
53
PMOS Transistor
bkdas
54
27
n+
PMOS
poly-Si
p+ poly-Si
n+
+++++
p+
p-type Si
p+
n-type Si
bkdas
55
CMOS Structure
VDD
IR
Vin
ID
Vout
VDD
NMOS Inverter
Vin
NMOS
M2
PMOS
Vout
M1
Cload
CMOS Inverter
bkdas
n+
56
28