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Electronic Materials & Components (ECL102)

Only for use of ITMU students

3.2 p-n junction Application


Basics of p-n junction, forward and reverse bias
characteristics,
Capacitance of p-n junction,
Different types of diodes photodiode, Zener diode
and LED,
Diode as a rectifier, Half wave, full wave and Bridge
rectifier circuits and determination of rms, average
value, ripple factor and regulation,
Basics of BJT and MOS transistors
Kasap Chapter 6 p.506-522, 532-541
Millman, Halkias, Jit Chapter 6, 7
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Diode Characteristics

Only for use of ITMU students

For large currents, a piece wise


Rf
Vg
approximation for the diode I-V
characteristics can be made by
I
assuming:
dI
1
The diode behaves as an open

dV R f
circuit with I = 0 and for V < Vg .
Vg is also known as threshold
voltage or knee voltage of the
Vg V
diode.
For V >Vg , diode resistance is Rf = dV/dI. Diode equivalent circuit
is shown at top for forward bias.
For a silicon diode,
For a germanium diode,

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Equivalent circuit of diode

Electronic Materials & Components (ECL102)

Piecewise Linear Diode:

Vg ~ 0.65V and Rf ~ 5.5


Vg ~ 0.3V and Rf ~ 6
2

Application of Diodes
Electronic Materials & Components (ECL102)

Only for use of ITMU students

Diodes have been used for various application in


Electronics and Electrical Engineering.
Some of them are:
Rectifiers To convert AC voltage to DC voltage
Zener Voltage Regulator To regulate DC
voltage
Clipper Circuit
Clamper Circuit
Voltage Multiplier
PIN Diode
Solar Cells
Light Emitting Diode

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Photodiode

light

Only for use of ITMU students


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p
Iph

ei

On a light (photon) striking the diode, an electron-hole pair is


generated in the intrinsic region if h >Eg.
Due to the high electric field, these carriers will be quickly
swept to the contact giving a increase in the diode current (I ph)
that is proportional to the light intensity.
Very few electron hole pairs will recombine since intrinsic
region has high carrier life time.
4

Electronic Materials & Components (ECL102)

h+

Photodiode is a p-i-n diode with


a wide high resistivity intrinsic
region bounded by a p and a n
region on either sides.
Photodiode operates under a
negative bias. This sets up a
high electric field in the i-region
since most of the voltage drops
across this region.

Photodiode

light

Electronic Materials & Components (ECL102)

I
h+

Only for use of ITMU students

_
p

e-

V
Dark

Iph

Photocurrent,
Iph

Used in CDROM and


optical communication
to detect light.

Iph is proportional to the


light intensity falling on the
diode.

qV

I I0 e kBT 1 Iph I0 Iph

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Zener Diode

Only for use of ITMU students

+
RL
Unregulated i
R
Voltage, Vs

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I
Zener Breakdown
Voltage, -VZ

forward
current

If the input dc voltage, Vs is more


than the magnitude of breakdown
Vout
voltage, -VZ, then the extra voltage
drops across the resistance Rs and
Vout = VZ.
However, no regulation if V < V
Z
out

Electronic Materials & Components (ECL102)

A Zener diode is a diode


showing predominantly
Zener breakdown under
reverse bias.
If used in reverse bias, it
can control the voltage
output of a dc power
supply as shown below.
Rs

Zener Diode
IL

No regulation if RL = 0 (making
Vout = 0) giving maximum load
Vout
current.
For regulation we need a
minimum load resistance, RL min.

Then Vout = Vz = ILRL & iZ = 0

Only for use of ITMU students

RL
Unregulated i
Z
Voltage, Vs

Vout ILR L

For breakdown ,
or , R L

IL
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R L Vs
RL R s

V VZ
VZ
s
IL max
R L min
Rs

R L Vs
VZ
RL R s

R s Vs
R L min
Vs VZ

This limits the load current that can be drawn.

Electronic Materials & Components (ECL102)

Rs

Only for use of ITMU students


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Silicon is not suitable for


LED since it has an indirect
band gap.
Suitable materials are
GaAs1-xPx, Ga1-xAlxAs,
In1-xGaxAs, GaN

1.9

GaAs

x=0.35

AlAs

Ga1-xAlxAs:

GaAs & AlAs have almost same lattice parameter least lattice
mismatch
Direct and Indirect band gap varies with x at different rates.
Eg increase on increasing x
Between x = 0 to 0.35, band gap is direct.
At x=0.35, band gap changes from direct to indirect

Electronic Materials & Components (ECL102)

Materials For LED

Eg, eV

Light Emitting Diode (LED)

Material

Band gap
(eV)

LED wavelength
(m)

Emission
Region

GaAs

1.43

0.867

IR

GaP

2.26

0.549

Green

GaAs0.6P0.4

1.92

0.645

Red

Ga0.7Al0.3As

1.9

0.652

Red

GaAs0.5P0.5:
N

2.1

0.590

Yellow

GaN

3.4

0.364

Blue

In1-xGaxAs

0.8

1.55

IR

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Electronic Materials & Components (ECL102)

Only for use of ITMU students

Light Emitting Diode (LED)

Half Wave Rectifier (HWR)

Only for use of ITMU students

i Vm sin t Vm sin where t

RL

i
Vm

Diode conducts in the


positive half cycle and acts
as an open circuit during
the negative cycle.

Electronic Materials & Components (ECL102)

Diodes connected in the


circuit in left acts as a half
wave rectifier. Input voltage is
an ac voltage, vi given by

For 0 , o Vm sin Vg Vm sin


For 2 , o 0
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10

Half Wave Rectifier (HWR)

Only for use of ITMU students

i
i

i Vm sin t Vm sin where t


Rectified current is given in the
figure on the right. For the time
cycle when i is negative, diode
will not conduct and i will be
negligible or zero.

i Im sin

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Vm

RL

for 0

for 0
Vm
Im

sin ce Vm Vg
RL R f RL R f
0

Electronic Materials & Components (ECL102)

Diodes connected in the


circuit in left acts as a half
wave rectifier. Input voltage is
an ac voltage, vi given by

Vm Vg

i
Im

where R f diode resis tan ce

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Half Wave Rectifier (HWR)

Only for use of ITMU students


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i
Im
DC current is the current through

the load resistance, RL measured by


a DC ammeter and is given by
2

1 2
1
1
Im sind 0.d
Idc
i d

Im sind
2
2 0
2 0

I
So, Idc m

AC Current (Irms):
RMS AC current is the current through the load resistance, R L
measured by an AC 1ammeter and is given
by
1
1
2

2
2
2
2
1 2
1 2

I
2
2
Irms
i d 2 Im sin d 2m sin d
2 0

0
0
Im
So Irms
2

Electronic Materials & Components (ECL102)

DC Current (Idc):

12

Half Wave Rectifier (HWR)

Only for use of ITMU students

( ) iR f ImR f sin for 0


Vm sin for 2

ImRfsin
V
m

DC voltage across the diode (Vdc) as


measured by a DC voltmeter is given by:
2

1 2
1

Vdc

)
d

I
R
sin

Vm sin d
m f

2 0
2 0

Rf

RL

1
2ImR f 2Vm 1 ImR f Vm
2

1
Since , Vm Im R f R L , Vdc ImR f ImR f ImR L
Vdc

Vdc
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Electronic Materials & Components (ECL102)

DC Voltage across Diode (Vdc):

ImR L Please note

The voltage across diode is negative.


The voltage across diode is not equal to
IdcRf where Idc = Im/.

13

Half Wave Rectifier (HWR)

Only for use of ITMU students

Power is consumed only during the


time the diode is conducting, i.e., for
0<<

1 2
iid
2 0
R f RL 2
1
Pi
i
(
R

R
)
id

i d
f
L
2 0
2 0

Pi

Rf

i
RL

Since i Im sin for 0 ,


1 2

Pi R f R L Im
sin 2 d
2 0

Electronic Materials & Components (ECL102)

Power Consumed (Pi):

2
R f R L
Pi Irms

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14

Half Wave Rectifier (HWR)

Only for use of ITMU students

The diode is inverse biased when


it is not conducting. It is subjected
to a peak inverse voltage during
this reverse biased condition.

V
m

PIV = Vm = 2Vrms(of transformer voltage)

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Electronic Materials & Components (ECL102)

Peak Inverse Voltage (PIV):

15

Half Wave Rectifier (HWR)

Only for use of ITMU students

Regulation is % variation of load voltage with load current.


Vno load Vfull load
% regulation
x100 % Ideally %regulation = 0
Vfull load
I
Vm
Idc m
(R f R L )
VmR L
V
VmR f
V
Vload IdcR L
m
m IdcR f
(R f R L ) (R f R L )
Vm
VmR L

Vno load Vfull load


(R f R L )
% regulation
x100 %
x100 %
VmR L
Vfull load
(R f R L )
R
% regulation f x100%
RL
As diode forward resistance, Rf, increases,
% regulation increases.
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Electronic Materials & Components (ECL102)

Regulation (%):

16

Half Wave Rectifier (HWR)


Electronic Materials & Components (ECL102)

Ripple Factor (r):

Only for use of ITMU students

Ripple factor (r) of a wave is the ratio of rms value of alternating


component of the wave and the average value of the wave.
For the half wave rectifiers,

'
Irms
V'
'
'
or rms where Irms
& Vrms
rms value of ac component
Idc
Vdc

'
Irms

1
2

2
i( ) Idc d
0

Since Idc
'
Irms

1
2

( ) 2i( )Idc I2dc d

1 2
i( )d by definition ,
2 0

1 2 2
i ( )d I2dc
2 0

'
2
So, Irms
Irms
I2dc
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17

Half Wave Rectifier (HWR)

Only for use of ITMU students

For the half wave rectifier, r

'
Irms
Idc

'
2
Irms
Irms
I2dc

So, r

2
Irms
I2dc

Idc

2
Irms
1
I2dc

For half wave rectifier ,

So, r

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Electronic Materials & Components (ECL102)

Ripple Factor (r):

Irms Im / 2

1.57
Idc Im / 2

2
Irms
1 1.57 2 1 1.21
I2dc

18

Half Wave Rectifier (HWR)


Electronic Materials & Components (ECL102)

Rectification Efficiency ():


DC output power Pdc

AC input power
Pi
I
I
Vm
We know , Idc m and Irms m where Im

2
R f RL
I2
Vm2 R L
1
Pdc I2dcR L m2 R L 2

R L R f 2

Only for use of ITMU students

2
R L R f
Pi Irms

So,

2
2

Im
Vm2
R L R f Vm R L R f2
4
4R L R f
4R L R f

Pdc
Vm2 R L 4R L R f 4
RL
1
2
2
Pi
R L R f 2
Vm2
RL R f

Re ctificatio n Efficiency ,
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RL

2 R L R f ~40% for large RL.


19

Full Wave Rectifier (FWR)


i1

RL i

uo
D2

It uses a centre tap transformer with the


centre tap grounded. Input voltage i is
half of the transformer output.
The circuit consists of two half wave
rectifier connected as shown on the
left. Diode D1 conducts during first half
cycle and diode D2 conducts during the
other half cycle.

i2
o

Vm

Output voltage will be


always +ve.
Maximum voltage across a
diode is 2Vm.

Electronic Materials & Components (ECL102)

Only for use of ITMU students

D1

For 0 , o Vm sin Vg Vm sin


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For 2 , o Vm sin Vg Vm sin

20

10

Full Wave Rectifier (FWR)


i1

RL i

uo
D2

i1

Im

i2

i2

Diode D1 conducts during first half


cycle and diode D2 conducts during the
other half cycle. i1 and i2 flows through
D1 and D2 respectively. Output voltage
i
appears across load resistance, RL.

Im

Im

Electronic Materials & Components (ECL102)

Only for use of ITMU students

D1

i = i1 +i2
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21

Full Wave Rectifier (FWR)


Electronic Materials & Components (ECL102)

DC and RMS Currents:

Only for use of ITMU students

DC and RMS values of current by definition can be given as:

Idc

2Im

and Irms

Im
2

where Im

Vm
R f RL

Ripple Factor (r):


r

2
rms
2
dc

I
I

1,

Im
Irms
Since
2 1.11, r 1.112 1 0.482
2Im
Idc

Ripple factor has dropped from 1.21 for HWR to 0.482 for FWR.

DC Output (Vdc):
Vdc
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2Vm

IdcR f

2Vm

2VmR f
2Vm R L R f

(R L R f )
RL R f
22

11

Full Wave Rectifier (FWR)


D1

Only for use of ITMU students

When diode D2 is not conducting and


D1 is conducting, a peak inverse
voltage equal to -2Vm appears across
D2 if the drop across D1 is neglected.

Vm

RL i

Vm

uo

PIV = 2 Vm

D2

Regulation (%):
% regulation

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i1

i2

Vno load Vfull load

x100 %
Vfull load
2I R
2VmR L
2Vm
2VmR f
2Vm
Vload IdcR L m L

IdcR f

(R f R L )

(R f R L )

2 Vm
2 VmR L

(R f R L )
R
% regulation
x100 % f x100 %
2 VmR L
RL
(R f R L )
23

Electronic Materials & Components (ECL102)

Peak Inverse Voltage (PIV):

Full Wave Rectifier


DC output power Pdc

AC input power
Pi
2Im
I
We know , Idc
and Irms m

Electronic Materials & Components (ECL102)

Rectification Efficiency ():

Only for use of ITMU students

So,

RL

Pdc
Vm2 R L 2R L R f 8
RL
4
2
2
Pi
R L R f 2
Vm2
RL R f

Re ctificatio n Efficiency ,
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Vm
R f RL

Vm2 R L

R L R f 2
2
2

Vm2
2
R L R f Im R L R f Vm R L R f2
Pi Irms
2
2R L R f
2R L R f

Pdc I2dcR L

2
4Im

where Im

RL

2 R L R f ~80% for large RL.

24

12

Bridge Rectifier

Only for use of ITMU students

i1

D3
D2

Vm

Input voltage (i) is equal to the


transformer output. Bridge
rectification needs a smaller
transformer than the FWR.
The circuit consists of four
RL
o
diodes D1, D2, D3 and D4
connected in a bridge
configuration. Diodes D1 and D3
conduct during first half cycle
carrying current i1 and diodes D2
and D4 conduct during the other
half cycle carrying current i2.

2 Output voltage (o) appears


across load resistance, RL.
i

Electronic Materials & Components (ECL102)

D1

D4

For 0 , o Vm sin 2 Vg Vm sin


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For 2 , o Vm sin 2 Vg Vm sin

25

Bridge Rectifier

Only for use of ITMU students

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D3
D2

i1

i1

Im

RL
o

i2
Input voltage (i) is equal to the
transformer output. Bridge rectification
needs a smaller transformer than the FWR.
The circuit consists of four diodes D1, D2,
D3 and D4 connected in a bridge
i
configuration. Diodes D1 and D3 conduct
during first half cycle carrying current i1
and diodes D2 and D4 conduct during the
other half cycle carrying current i2. Output
voltage (o) appears across load
resistance, RL.

Im

Im

Electronic Materials & Components (ECL102)

D1

D4

i = i1 + i2
26

13

Bridge Rectifier
i

D3

RL
o

Only for use of ITMU students

D2

Vdc

2Vm

2IdcR f

and

Since two diode take part in


conduction in each cycle.
Assuming that all diodes are
equivalent we get
Vm
Im
R L 2R f

2
Power input , Pi Irms
(R L 2R f )

Features of Bridge Rectifier


Smaller input transformer needed compared to full wave
rectifier.
No centre tap in the input transformer is needed.
Each diode has only transformer voltage in its inverse cycle. So
peak inverse voltage on the diode is equal to peak output
voltage in magnitude.

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Electronic Materials & Components (ECL102)

D1

D4

27

Use of Filters for Rectifiers

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(a)

RL
(b)

L
C

RL
(c)

From rectifier

RL

From rectifier

From rectifier

From rectifier

Only for use of ITMU students

Output voltage of HWR and FWR has a dc component and


several harmonics.
Filters are used to reduce the harmonics and thereby reduce
ripples in the output.
Filters are of several types:
(a) Inductive Filters
(b) Capacitive Filters
(c) L-section Filter combination of L and C
(d) -section Filter combination of L and C

Electronic Materials & Components (ECL102)

L
C1

C2

RL
(d)

28

14

Capacitive Input Filter

Only for use of ITMU students

If a capacitor, C, is connected at the


+Vm output of a half wave rectifier, the
capacitor C will charge up in the
positive cycle with the diode
C
conducting, but can not discharge if
i
the diode is reverse biased, i.e., when
o
the input voltage falls below Vm after
charging.
This will result in following:
i Vm sin t Vm sin
A constant output of o = +Vm will be
obtained.
A peak inverse voltage of 2Vm
[ =+Vm-(-Vm)] will develop across the
diode during the peak of the negative
cycle.
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29

Electronic Materials & Components (ECL102)

Capacitive Filter for HWR:

Capacitive Input Filter

Only for use of ITMU students

If a load resistor, RL, is also


present besides the capacitor,
C, is connected at the output of
i
iC L
a half wave rectifier, the
capacitor C will charge up in
i
the positive cycle with the
C
o
RL
diode conducting. In this
conducting mode:
1
i Vm sin t Vm sin
Admit tan ce
jC if R L R f
RL
1

So, diode current i(t )


jC i (t )
jC Vm sin t
RL

RL

1
2 2
1

i(t ) Vm

C
sin(

)
where

tan

CR
L
R L2

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Electronic Materials & Components (ECL102)

Capacitive Filter for HWR:

30

15

Capacitive Input Filter

Only for use of ITMU students

i(t ) Vm

1
2 C2 sin(t ) where tan CR L
R L2

So peak diode current is high compared to the case where no


capacitor is used.

Diode Conducting:

Cut-out
time

t1

2/

As soon as the diode start


conducting, the diode current
increases sharply and then reduces to
zero at time t1.
While the diode is conducting,
capacitor will charge till diode
current, i becomes zero, i.e, till a
time t1 as shown given by:

i
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I = transformer voltage
o = output voltage

Electronic Materials & Components (ECL102)

Capacitive Filter for HWR:

sin(t 1 ) 0

t 1 n tan 1 CR L
31

Capacitive Input Filter

Only for use of ITMU students

Cut-in
time

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Electronic Materials & Components (ECL102)

Capacitive Filter for HWR:


Diode Not Conducting:

While the diode is not


conducting, capacitor will
discharge through load
o
resistor RL and voltage will
decay with time as given by:
t t1
t
2/ t2
t1 /

o (t ) Vm sin t 1 exp
CR L
At a time t2 called cut-in time, the diode will start conducting
since the transformer voltage, vi(t2) > vo(t2).
t t1

Vm sin t 2 Vm sin t 1 exp 2


CR L
i

Cut-out
time

32

16

Capacitive Input Filter

Only for use of ITMU students

2/ t2

Vr
T2
T1

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2/

T1 T2

In a full wave rectifier (FWR),


output voltage is present in each
cycle.
If a capacitor, C is added across
the load resistor RL and voltage
will rise and decay with time as
given on the left.
Ripple waveform can be
approximated to be triangular
waveform as shown on left
where
T1 = diode conducting time
T2 = diode nonconducting time
Vr = ripple voltage

Electronic Materials & Components (ECL102)

Capacitive Filter for FWR:

33

Capacitive Input Filter


For such an waveform,
V
Vm
Vdc Vm r
2
RMS
of
the
triangular
ripple
T2
voltage, Vrms is given by,
/
t
V
2/
T1
V 'rms r
2 3
Since the capacitor discharges for time, T 2, Vr is given by,
I T
Vr change in capacitor voltage during T2 dc 2
C
Since T2 >>T1, T2 T/2 =1/2f and
V'
Idc
Vr
1
Ripple factor r rms

Vdc
2 3Vdc 4 3fCVdc 4 3fCR L
Idc
Vr
Vdc Vm
Vm
2
4fC
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Electronic Materials & Components (ECL102)

Capacitive Filter for FWR:


o

Only for use of ITMU students

Vr

34

17

Capacitive Input Filter

Only for use of ITMU students

Vr ripple voltage

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Vdc Vm

Idc T2
I
dc
C
2fC

Idc
1
Vm IdcR o where R o output resis tan ce
4fC
4fC

For low ripple, one must use high value filter capacitor.
No load voltage is Vm, but voltage under load will change less if C
is high.
Desirable features of use of capacitive filter are:
Low ripple
No voltage loss at high load current

Electronic Materials & Components (ECL102)

Capacitive Filter for FWR:

Undesirable features of use of capacitive filter are:


High peak diode current when diode starts conducting.
High ripple at high load current
35

Bipolar Junction Transistor (BJT)


n-p-n Transistor

Only for use of ITMU students


bkdas

base

collector

NdE

NaB

NdC

VBE

IB

Electronic Materials & Components (ECL102)

IE

emitter

IC

VCB

Two back to back p-n junctions


Base region is thin enough to enable minority carriers to diffuse
through base region.
Junction are far apart so that their depletion layers do not
overlap.
36

18

BJT Structure

Only for use of ITMU students

Electronic Materials & Components (ECL102)

Bipolar Junction Transistor ( BJT)

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37

Forward Active Regime

Only for use of ITMU students

IE

B
p-base

C
n - collector

Electronic Materials & Components (ECL102)

E
n+ -emitter

IC>0

+
+
IB > 0
VBC < 0
VBE > 0
VBE > 0 & VBC < 0 B-E junction forward biased
B-C junction reverse biased
VBE > 0 injection of electrons from E to B
injection of holes from B to E
VBC < 0 extraction of electrons from B to C
extraction of holes from C to B

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Electron injected
into B is extracted
by C due to
reverse bias.
38

19

Forward Active Regime

Only for use of ITMU students

Electronic Materials & Components (ECL102)

B
p

E
n+

IE

IC>0
electron flow

hole
flow

IB > 0
VBC < 0

VBE > 0

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39

Forward Active Regime

Only for use of ITMU students

Electronic Materials & Components (ECL102)

Hole flow across B-E junction is due to


Injection across the forward biased B-E junction
Compensate for recombination with electrons in the base region
holes supplied by the base-metal contact
Electron flow across the B-E junction is due to
Injected electrons lost due to recombination in base
Electron flow across B-C junction
Flow across the B-C junction is due to
Electron flow from base region due to reverse bias
Thermally generated flow of holes and electrons
C (n)
E (n+)
B (p)
electron flow

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40

20

Forward Active Regime


Emitter current consists of two
parts:
Electron current crossing B-E
junction - IEN
Hole current crossing B-E
junction - IEP

E (n+)

Electronic Materials & Components (ECL102)

Only for use of ITMU students

BJT Parameters:
C (n)
B (p)
electron flow

IE IEP IEN Total emitter current


A fraction of electron current (IEN) through B-E junction
crosses over to the collector gives collector current, I C.
IC BIEN
B fraction of injected electrons reaching collector
base transport factor

g
bkdas

IEN
injection efficiency
IEP IEN

41

Forward Active Regime


BJT Parameters:

Only for use of ITMU students


bkdas

Electronic Materials & Components (ECL102)

IC
BIEN

Bg
IE IEP IEN

is called the current transfer ratio .


1 always.

F base to collector amplificat ion factor

IC
IB

BJT is a current controlled device. The collector current is


directly proportional to the base current.
The amplification factor, F gives the factor by which base
current amplified in the BJT.
42

21

Forward Active Regime


BJT Parameters:

Only for use of ITMU students

IB IC IE BIEN IEP IEN IEP (1 B)IEN


IEN
(IEP IEN )

IEN
1 B
(IEP IEN )
B

I
BIEN
F C
IB IEP (1 B)IEN
F

VBC
IB
B

+
+
VBE

Bg

1 Bg 1

+
IC
VCE

IE

B (fraction of injected minority carriers reaching collector)


will be higher if base thickness is less and if life time (or
diffusion length) of minority carriers in the base region is
more. This will increase F (current gain of transistor).

bkdas

Electronic Materials & Components (ECL102)

IE IC IB

43

Bipolar Junction Transistor (BJT)

bkdas

IE

emitter

base

collector

NaE

NdB

NaC

Electronic Materials & Components (ECL102)

Only for use of ITMU students

p-n-p Transistor

IC

IB

VBE
VBE < 0 B-E junction is forward biased..
VBC > 0 B-C junction is reverse biased.
IB is negative.
IC is negative.
IE is positive.

VBC

44

22

Regime of Operation
VBE

Only for use of ITMU students

VBC
IE
B

forward
active

IC

+
+
VBE

Electronic Materials & Components (ECL102)

saturation

VCE

cut-off

reverse

VBC

IE
E
n-p-n transistor

bkdas

45

MOS Structure
Evac
Electronic Materials & Components (ECL102)

qs
qm
metal

+
+
+

metal

p-silicon
oxide

bkdas

Ef
Ev

+ ~9eV
oxide

Only for use of ITMU students

Ec

Depletion layer
46

23

MOS Structure
Depletion Layer Formation:

Only for use of ITMU students

+
+

oxide

Depletion layer charge


or Bulk charge

p-silicon

In a metal-oxide-silicon
structure, a depletion
layer forms below the
metal gate as in M-S
structure. For p-type
silicon substrate, a
positive charge develops
on metal side and
depletion layer is
negatively charged.

bkdas

Electronic Materials & Components (ECL102)

metal or
n+- polysilicon

Gate charge

47

MOS Structure

bkdas

As the gate bias increases, the extent


of depletion will increase. As the
Na
surface gets depleted from majority
carriers (holes in this case), minority
P (majority)
carrier (electrons in this case)
concentration will increase near the
surface.
Vg=Vt
n
At a certain gate voltage, the minority
minority
ni2/Na
carriers near surface will equal the
Vg=0
0
x
majority carrier concentration far from -tox
p-Si
oxide
the surface, i.e., nsurface = Na
This condition is called Threshold & Threshold voltage = Vt.
For V Vt, n Na & the material behaves n-type near the oxidesilicon interface (instead of being p-type). An inversion layer forms
near the surface.

Electronic Materials & Components (ECL102)

Only for use of ITMU students

Threshold & Inversion:

48

24

MOSFET Transistor
G
D
gate
oxide insulator
Only for use of ITMU students

n
p

There are two p-n junction between drain and source.


Without a gate voltage applied, no current can flow between the
source and drain regions since one of the p-n junctions is reverse
biased.
Above a certain gate-to-source voltage (threshold voltage Vt), a
conducting layer of mobile electrons (called channel) is formed at the
Si surface beneath the oxide due to inversion. These electrons can
carry current between the source and drain through the channel.

bkdas

Electronic Materials & Components (ECL102)

49

MOSFET Transistor
Electronic Materials & Components (ECL102)

Vds

Id
Vgs>Vt

Id

Only for use of ITMU students

Vgs > Vt
zero if Vgs < Vt
Vbs=0

Vds
x

Cut-off : Vgs < Vt, Vgd < Vt No inversion layer Id = 0


Linear : Vgs > Vt, Vgd > Vt (with Vds > 0) Inversion layer
everywhere under gate
bkdas

50

25

MOSFET Transistor
Electronic Materials & Components (ECL102)

Id Vgs Characteristics :
Id = 0 for Vgs < Vt
Only for use of ITMU students

Id present for Vgs >Vt

Id

0
0

bkdas

Vt

Vgs
51

NMOS Transistor
Vgs > Vt : Pinch-off

S
n+

n+

Only for use of ITMU students

p-Si

bkdas

If Vgd = Vgs-Vt, there will be no inversion layer near the drain.


If there is no inversion layer at drain end, will it act as a high
resistance to current flow?
Electrons are swept into the drain by the E-field when they
enter the pinch-off region and saturation occurs.
The drain current Id saturates to Idsat.

Electronic Materials & Components (ECL102)

Vds = VgsVt

Inversion-layer
is pinched-off
at the drain end

52

26

NMOS Transistor
Electronic Materials & Components (ECL102)

Id Vds Characteristics (Long Channel) :

Only for use of ITMU students

The MOSFET Id-Vds curve consists of two regions:


1) Resistive or Triode Region: 0 < Vds < Vgs Vt

Id

nCox W

2(V
L

gs

Vt )Vds Vds2 6

X 10-4
Vds = Vgd - Vt

2) Saturation Region:
Vds > Vgs Vt

IDsat

nCox W
2

Vgs = 2.5V

Vgs = 2.0V

Saturation

Linear

( VGS VT )2

Vgs = 1.5V

Vgs = 1.0V
0

cutoff

bkdas

0.5

1.5

2.5

Vds (V)
53

PMOS Transistor

bkdas

Electronic Materials & Components (ECL102)

As compared to an n-channel MOSFET, the signs of all the voltages


and the currents are reversed:

Only for use of ITMU students

54

27

NMOS & PMOS Transistor


NMOS

Only for use of ITMU students

n+

PMOS

poly-Si

p+ poly-Si

n+

+++++

p+

p-type Si

p+

n-type Si

For current to flow, VGS > VTn

For current to flow, VGS < VTp

Enhancement mode: VTn > 0

Enhancement mode: VTp < 0

Transistor OFF when VG = 0V

Transistor OFF when VG = 0V

Transistor ON when VG > VTn

Transistor ON when VG < VTp

Depletion mode: VTn < 0


Transistor ON when VG=0V
Transistor OFF when VG < VTn

Depletion mode: VTp > 0


Transistor ON when VG=0V
Transistor OFF when VG > VTp

bkdas

55

CMOS Structure

Only for use of ITMU students

VDD

IR

Vin

ID

Vout

VDD
NMOS Inverter
Vin

NMOS

M2

PMOS
Vout

M1

Cload

CMOS Inverter

CMOS inverter consumes no


power while the input is not
changing (i.e. Vin = 0 or 1) since
either PMOS or CMOS is off.
It consumes power only when it
changes state from 0 1 or 1 0.

Electronic Materials & Components (ECL102)

An NMOS inverter consumes power


even when the input is not changing.
Inverter consumes power when Vin =0
Inverter consumes power when Vin = 1

bkdas

Electronic Materials & Components (ECL102)

n+

56

28

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