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Fig. 2. A radiation pattern of the plasma from a tired cell is shown, superimposed nn the usual optical pattern. The emitter injection current is
10 mA through 500-R load from 5 V . The plasma area is partly covered
by the metallized middle row. s o that the recombination radiation image
is observed as separated by this metallization line. The shift pulsewidth
and also the exposut-e time are 40 p s , and the integration is 60 s.
I. I N T R O D L ~ C I I O N
Fig. 3. Consecutive patterns of the emission by delaying the sampling signal. The delay is changed by 20-ps interval. A unit transfer occurs cvery
40 ps. A transient and stable plasma states are alternativcly displayed.
It implies that a timing analysis of digital circuit is po\sihlc.
[ l ] A. G . Chynoweth and K . G . McKay. "Photon emission from avalanche breakdown in silicon." P h ~ s Rei,.
.
. v o l . 102. no 2 , pp. 369376, 1956.
[2] C . Hu. S . C. Tam. F-C. Hsu, P-K. K O , T-Y. Chan. and K . W . Terril.
Manuscript received May 23. 1989. revised December 15. 1989. The
review of this brief wa, arranged by Associate Editor G . Craford.
B. Lakshmi and K. Chalapati are with SAMEER, Indian Institute of
Technology Campus. Bombay 400076, India.
A. K . Srivastava, B. M. Arora, S . Subramanian, and D. K . Sharma are
with the Tata Institute of Fundamental Research, Bombay 400005. India.
IEEE Log Number 9034392.
0018-9383/90/0600-1533$01.OO O 1990 I E E E
Authorized licensed use limited to: INDIAN INSTITUTE OF TECHNOLOGY BOMBAY. Downloaded on January 24, 2009 at 04:07 from IEEE Xplore. Restrictions apply.
1534
37. N O . 6. J U N t I940
energies hv > E,, a 2-mW He-Ne laser was used. Thc intensity
of illumination was varied by a set of neutral density filters. For
spectral response measurements, light from a tungsten lamp was
passed through a monochromator and then focused onto the gate
region. For photon energies h u < E,, the light beam was chopped
and the photocurrent was measured by using a lock-in amplifier.
Current-voltage behavior in dark was also measured.
111. RESULTSA N D DISCLISSION
A . Normal Operation
Fig. 1 shows typical l,),5-VDs characteristics of a large-area
(90-pm-long g a t e ) device operating in dark. The device shows
normally off behavior and operates a s an enhancement-mode MESF E T , with a threshold voltage V , = 100 m V . Similar characteristics were observed with 2-pm-long gate M E S F E T ' s .
F i g . 2 shows typical ID,s-VD,s characteristics of a large-area
MESFET, which is operated with a floating gate and light excitation from a He-Ne laser. Different IDs-VLls curves were obtaincd
by reducing the incident light with calibrated neutral density filters.
Characteristics in Fig. 2 resemble those in F i g . I . with the gate
becoming forward-biased by light, like in Schottky-barrier solar
cell with
VDS ( V )
in
dark
He - N e Loser Illurninallon
-.?
::k
01
0 2 0.3 0 4 0 5 0 6 07 0 8 09
V D ~(VOLTS)
Illumination
L G= 90prn
L
6
(3)
where Vo IS found to be 4 0 m V . Under illumination with hv < E,,
the open-circuit voltage at the gate can still be expressed by ( I )
From ( I ) and (3) we get
,111 q , ,
(4)
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153s
where
f,,
I,$(
I@
-.
11 v
I V . CONCLUSION
A normally off M E S F E T can be used for detecting light of energy i) above the bandgap of the semiconductor by hand-to-hand
excitations and ii) below the semiconductor bandgap by internal
photoemission. T h e lower limit of the photon energy that can be
detected in the latter case is given by the gate Schottky-barrier
height. In both cases, the photoresponses can be explained by a
model in which the M E S F E T gate Schottky barrier acts like a photodiode and develops a photovoltage under illumination, which, in
turn. changes the drain current. T h e response current
is amplitied by the F E T transistor action. In the nomial mode of operation,
(
varies logarithmically with the light intensity. W e have
shown that in the subthreshold-mode operation the drain current
varies linearly with the light intensity. T h e photo-MESFET thus
provides means for light detection over a wide energy range with
amplification. Sincc M E S F E T ' s are majority-carrier devices. they
also otfer the advantage of high speed.
'
IO
20
Fig. 5 . AC photocurrent
30
40
50
'
60
70
80
90
f,,,,-f,, characteristics
wavelength of I
o f GaAs MESFET at a
ACKNOWL.~,DGMEN~'
pili.
[ I ] J . C. Campbell. "Photo-transistora."
/ w r t r / s . vol.
22D. W . T. Tsang. Ed
1985.
PHOTON
ENERGY (eV)
Fig. 6. (Yield)'
ANI)
RUICHEN LIU
Manuscript received April 24. 1989: revised January 4. 1990. The review of this brief was arranged by Associate Editor K . C. Saraswat.
The authors are with AT&T Bell Laboratories. Murray Hill, NJ 07974.
IEEE Log Number 903.5 180.
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