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Q4. We wish to do an As implant into a Si wafer with a 0, 1 m oxide such that the peak
lies at the oxide-silicon interface, with a peak value of 5 1019 cm3 . What implant
parameters (energy, dose and beam current) would you recommend? The scan area is
200 cm2 and the desired implant time is 20 s. Assume similar range statistics in Si
and the oxide.
Q5. We wish to implant 5 1014 cm2 B into Si at an average depth of 0, 5 m. We
have an implanter which has a maximum acceleration voltage of 150 kV . How can we
achieve this profile if we have singly and doubly charged B in the machine? Suppose
the doubly ionised beam current is 0, 1 mA. How long will the implant take if the scan
area is 100 cm2 ? By doing clever ion implanter source design, Dr. Boron Maximus has
increased the beam current by a factor of 1000. From a dose uniformity point of view,
is this good or bad?
Q6. Assuming a constant (unlimited) source diffusion of P at 1000 C into p-type Si (Na =
2 1016 cm3 ), calculate the time required to achieve a junction depth of 1 m. See
expressions in Q2.
Q7. We are interested in patterning the structure shown in Fig. Q7. Design the mask
aligner optics in terms of numerical aperture of the lens and the wavelength of the
source.
1 m
2 m
1 m
Fig. Q7.
Q8. In a p+ -n junction, the hole diffusion current in the neutral n-region is given by
Dp
xn
d
Ip (xn ) = qADp
pn (xn ) = qA pn (0) exp
dxn
Lp
Lp
What are the electron diffusion and electron drift current components at xn in the
neutral n-region?
Q9. An abrupt Si pn-junction has Na = 1018 cm3 and Nd = 5 1015 cm3 on the p- and
n-side of the junction respectively.
(a) Calculate the positions of the Fermi levels at 300 K in the p- and n-regions
(b) Draw an equilibrium band diagram for the junction and determine the contact potential
V0 from the diagram.
(c) Compare the value of V0 obtained in (b) and the value computed from
V0 =
kT Na Nd
ln
q
n2i
Q10. The junction described in Q9. has a circular cross-section with a diameter of 10 m.
Calculate xn0 , xp0 , Qn (the charge per unit area on the n-side) and E0 for this junction
under equilibrium conditions at 300 K. Sketch E (x) and charge density to scale.
Q11. The electron injection efficiency of a junction is In /I at xp = 0.
(a) Assuming the junction follows the simple diode equation, express In /I in terms of the
diffusion constants, diffusion lengths and equilibrium minority carrier concentrations.
(b) Show that
1
In
=
I
1 + Ln,p pp n,p /Lp,n nn p,n
where the p and n subscripts denote the carrier type and the p- and n-regions respectively. What should be done to increase the electron injection efficiency of a junction?
Q12. A Si p+ -n junction has a donor doping of 5 1016 cm3 on the n-side and a crosssection area of 103 cm2 . If p = 1 s and Dp = 10 cm2 s1 , calculate the current when
a forward bias of 0, 5 V is applied across the junction. Take the temperature as 300 K.
Q13.
(a) Explain why charge storage capacitance is unimportant in reverse biased junctions.
(b) Assuming that a GaAs junction is doped to equal concentrations on the n- and p-sides,
would you expect electron or hole injection to dominate in the forward bias? Explain.
Q14.
(a) A Si p+ -n junction 102 cm2 in cross-section area has Nd = 1015 cm3 doping on the
n-side. Calculate the junction capacitance with a reverse bias of 10 V .
(b) An abrupt p+ -n junction is formed in Si with a donor doping of Nd = 1015 cm3 . What
is the depletion region thickness just prior to avalanche breakdown?
Q15. Use the expressions for the peak electric field in the space-charge region and the
penetrations of the space-charge into the p- and n-regions of an abrupt pn-junction to
show that the peak electric field is controlled by the doping on the more lightly doped
side of the junction.
Q16. An abrupt 104 cm2 Si pn-junction has the parameters shown in table Q16. at 300 K.
Draw an equilibrium band diagram for this junction, including numerical values for
the Fermi level position relative to the intrinsic level on each side. Find the contact
potential from the diagram and check your answer with the analytical expression.
Table. Q16.
p side
Na = 1017 cm3
n = 0, 1 s
p = 200 cm2 V 1 s1
n = 700 cm2 V 1 s1
n side
Nd = 1015 cm3
p = 10 s
p = 450 cm2 V 1 s1
n = 1300 cm2 V 1 s1
Q17. A long p+ -n diode is forward biased with a current I flowing. The current is suddenly
tripled at t = 0.
(a) What is the slope of the hole distribution at xn = 0 just after the current is tripled?
(b) Assuming the voltage is always much greater than kT /q, relate the final junction voltage
to the initial voltage prior to t = 0.
Q18. Assume that the doping concentration Na on the p-side of an abrupt junction is the
same as Nd on the n-side. Each side is many diffusion lengths long. Find the expression
for the whole current Ip in the p-type material.
Q19. A Si pn-junction with cross-section area A = 0, 001 cm2 is formed with Na = 1015 cm3
and Nd = 1017 cm3 . Calculate
(a) The contact potential.
(b) The space-charge width at equilibrium.
(c) The current with a forward bias of 0, 5 V . Assume that the current is diffusion dominated. Assume n = 1500 cm2 V 1 s1 , p = 450 cm2 V 1 s1 , n = p = 2, 5 s.
Which carrier is responsible for most of the current and why? If you want to double
the electron current, what should you do?
Q20. An n+ -p junction with a long p-region has the following properties: Na = 1016 cm3 ,
Dp = 13 cm2 s1 , n = 1000 cm2 V 1 s1 , n = 2 s and ni = 1010 cm3 . If we apply
0, 7 V forward bias to the junction at 300 K, what is the electric field in the p-region
far from the junction?
Q21. Draw the forward bias energy band diagram for the diode of Q16. and indicate the
positions of the quasi-Fermi levels.
Q22. In a p+ -n junction, the n-doping Nd is doubled. How do the following parameters
change if everything else remains unchanged? Indicate only increase or decrease.
(a) Junction capacitance
(b) Built-in potential
4
Q32. A diode can be modeled as an ideal diode with a voltage offset equal to V and a
resistance r in series in the so called piece-wise linear approximation. Such a diode is
used in a simple half-wave rectifier circuit in which the diode is placed in series with a
load resistor. Assume that the diode offset voltage V = 0, 4 V and the diode resistance
r=
dv
= 400
dt
For a load resistor of 1 k and a sinusoidal input v (t) = 2 sin t, sketch the voltage
across the load resistor over two cycles.
Q33. An abrupt p+ -n junction is formed in Si with a donor doping of Nd = 1015 cm3 .
What is the minimum thickness of the n-region to ensure avalanche breakdown rather
than punchthrough?
Q34. Assume holes are injected from a p+ -n junction into a short n-region of length l. If
pn (xn ) varies linearly from pn (0) at xn = 0 to zero at the ohmic contact at xn = l,
find the steady-state charge in the excess hole distribution Qp and the current I.
Q35. Assume that a p+ -n diode is built with an n-region width l smaller than a hole diffusion length. This is the so called narrow-base diode. Since for this case holes are
injected into a short n-region under forward bias, we cannot use the assumption that
pn (xn ) = 0. Instead, we must use as a boundary condition, the fact that
pn (xn = l) = 0.
(a) Solve the diffusion equation to obtain
pn (xn ) =
(a) By integrating Gauss law across the depletion region, show that the maximum value of
the electric field in the space-charge region is given by
Emax
Gdm+1
0
= q
(m + 1)
(b) Find the charge Q due to ionised donors in the space-charge region and write Q explicitly
in terms of V0 V .
(c) Using the results of (c), take the derivative of Q w.r.t. V0 V to show that the capacitance
of the space-charge region is given by
qGm+1
Ct = A
(m + 2) (V0 V )
1/(m+2)
to show that
q
dE
q
=
p n + Nd+ Na Gx
dx
2
q
d0
2
E (x) = G x
2
2
12 (V0 V )
d=
qG
1/3
qG2
Ct = A
12 (V0 V )
1/3
Q39. Design an ohmic contact for n-type GaAs using InAs with an intervening graded
InGaAs region.
Q40.
(a) Calculate the contact potential of a Si pn-junction operating at 300 K for Na = 1014 and
1019 cm3 with Nd = 1014 , 1015 , 1016 , 1017 , 1018 and 1019 cm3 and plot V0 against Nd
for each case.
(b) Plot the maximum electric field Emax against Nd for the junctions in (a).
Q41. A Schottky barrier is formed between a metal with a workfunction of 4, 3 eV and
p-type Si with electron affinity of 4 eV . The acceptor doping in the Si is 1017 cm3 .
7
(a) Draw the equilibrium band diagram, showing a numerical value for qV0 .
(b) Draw the band diagram with 0, 3 V forward bias and repeat for the case of a 2 V reverse
bias.
Q42. What is the conductivity of a piece of Ge with ni = 2, 3 1013 cm3 doped with
5 1013 cm3 donors and 2, 5 1013 cm3 acceptors? (Dn = 100 cm2 s1 , Dp =
50 cm2 s1 ). If the electron affinity of Ge is 4, 0 eV , and we put down a metal electrode
with workfunction 4, 5 eV , what is the workfunction difference? Do you expect this to
be a Schottky barrier or an ohmic contact?
********************************************************************************
Si
Eg (eV )
1, 11
2
n (cm /V -s)
1350
p (cm2 /V -s)
480
r (dielec. const) 11, 8
ni (EHP s/cm3 ) 1, 0 1010
Ge
0, 67
3900
1900
16
2, 5 1013
GaAs
1, 43
8500
400
13, 2
1, 8 106