DM 00066598

STGB20H60DF,
STGF20H60DF, STGP20H60DF
600 V, 20 A high speed
trench gate field-stop IGBT
Datasheet - production data
Features
TAB
High speed switching

Tight parameters distribution
3
1
TO-220
TO-220FP
Safe paralleling
Low thermal resistance
Short-circuit rated
Ultrafast soft recovery antiparallel diode
TAB
Applications
3
1
Motor control
DPAK
UPS, PFC
Figure 1. Internal schematic diagram
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
C (2, TAB)
G (1)
E (3)
Table 1. Device summary

Order codes
Marking
Packages
Packaging
STGB20H60DF
GB20H60DF
DPAK
Tape and reel
STGF20H60DF
GF20H60DF
TO-220FP
Tube
STGP20H60DF
GP20H60DF
TO-220
Tube
June 2013
This is information on a product in full production.
DocID023740 Rev 4
1/22
www.st.com
22
Contents
STGB20H60DF, STGF20H60DF, STGP20H60DF
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuits
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DocID023740 Rev 4
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
TO-220
Collector-emitter voltage (VGE = 0)

Continuous collector current at TC = 25 C
TO-220FP
DPAK
600
40
40(1)
20
(1)
20
80
80(1)
IC
Continuous collector current at TC = 100 C
ICP
(2)
VGE
Pulsed collector current
Unit
Gate-emitter voltage
20
Continuous forward current TC = 25 C
40
40(1)
Continuous forward current at TC = 100 C
20
20(1)
IFP(2)
Pulsed forward current
80
80(1)
PTOT
Total dissipation at TC = 25 C
167
37
TSTG
Storage temperature range
- 55 to 150
Operating junction temperature
- 55 to 175
IF
C
TJ
1. Limited by maximum junction temperature.

2.
Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Table 3. Thermal data

Symbol
Parameter
TO-220
DPAK
TO-220FP
Unit
RthJC
Thermal resistance junction-case IGBT
0.9
C/W
RthJC
Thermal resistance junction-case diode
2.5
5.6
C/W
RthJA
Thermal resistance junction-ambient
DocID023740 Rev 4
62.5
C/W
3/22
Electrical characteristics
TJ = 25 C unless otherwise specified.
Table 4. Static
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current

(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
Unit
1.6
VGE = 15 V, IC = 20 A
Collector-emitter saturation
TJ = 125 C
voltage
VGE = 15 V, IC = 20 A
TJ = 175 C
VGE(th)
Max.
600
VGE = 15 V, IC = 20 A
VCE(sat)
Typ.
2.0
1.75
V
1.8
5.0
6.0
7.0
VCE = 600 V
25
VGE = 20 V
250
nA
Table 5. Dynamic
Symbol
4/22
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 400 V, IC = 20 A,
VGE = 15 V
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID023740 Rev 4
Min.
Typ.
Max.
Unit
2750
pF
110
pF
65
pF
115
nC
22
nC
45
nC
Table 6. Switching characteristics (inductive load)

Symbol
td(on)
Parameter
Test conditions
Turn-on delay time

VCE = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V
Current rise time
tr
(di/dt)on
td(on)
tr
Turn-on current slope

Turn-on delay time
Current rise time
(di/dt)on
tr(Voff)
td(off)
tf
Min.
Turn-on current slope
VCE = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V
TJ = 175 C
Off voltage rise time
Off voltage rise time
td(off)
Turn-off delay time
tf
Current fall time
VCE = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V
TJ = 175 C
tsc
Short-circuit withstand time
VCC 360 V, VGE = 15 V
Unit
42.5
ns
11.9
ns
1345
A/s
42.5
ns
13.4
ns
1180
A/s
-
ns
177
ns
55
ns
26
ns
173
ns
86
ns
Min.
Typ.
Max.
Unit
209
261
470
480
416
896
Current fall time
tr(Voff)
Max.
20
VCE = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V
Turn-off delay time
Typ.
Table 7. Switching energy (inductive load)

Symbol
Eon (1)
Eoff
(2)
Ets
Test conditions
Turn-on switching losses

Turn-off switching losses
Turn-on switching losses
(2)
Turn-off switching losses
Ets
VCE = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V
Total switching losses
Eon (1)
Eoff
1.
Parameter
Total switching losses
VCE = 400 V, IC = 20 A,
RG = 10 , VGE = 15 V
TJ = 175 C
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
DocID023740 Rev 4
5/22
Table 8. Collector-emitter diode

Symbol
6/22
Parameter
Test conditions
VF
Forward on-voltage
IF = 20 A
IF = 20 A, TJ = 175 C
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
Min.
Typ.
Max.
Unit
1.8
1.3
2.2
V
V
90
ns
Vr = 60 V; IF = 20 A;
diF/dt = 100 A / s
Vr = 60 V; IF = 20 A;
diF/dt = 100 A / s
TJ = 175 C
DocID023740 Rev 4
110
nC
2.4
180
ns
466
nC
5.2
2.1
Electrical characteristics (curves)
Figure 2. Output characteristics (TJ = 25C)

AM16287v1
IC
(A)
11 V
100
AM16288v1
IC
(A)
15 V
11 V
100
13 V
15 V
80
Figure 3. Output characteristics (TJ = 175C)
80
60
13 V
60
9V
40
9V
40
20
20
0
0
VCE(V)
Figure 4. Transfer characteristics
4 VCE(V)
Figure 5. Normalized VGE(th) vs junction

temperature
AM16289v1
IC
(A)
7V
-40 C
AM16292v1
VGE(th)
(norm)
100
1
25 C
80
175 C
0.9
60
VCE= VGE
IC = 1 mA
VCE= 5 V
0.8
40
0.7
20
0
7
10
11 VGE(V)
0.6
-75
DocID023740 Rev 4
-25
25
75
125 TJ(C)
7/22
Figure 6. Collector current vs. case temperature Figure 7. Collector current vs. case temperature
for DPAK and TO-220
for TO-220FP
AM16282v1
IC
(A)
40
20
32
16
24
12
16
0
0
25
50
75
100 125
AM162981V1
IC
(A)
TC(C)
Figure 8. Collector current vs. frequency for

DPAK and TO-220
AM162821v1
IC
(A)
25
50
75
100
AM162982V1
IC
(A)
20
Tc= 80C
Tc= 80C
50
16
Tc= 100C
Tc= 100C
40
12
30
8
Rectangular current shape
(duty cycle= 0.5, VCC= 400 V
Rg = 10 , VGE= 0/15V, TJ= 175C
10
1
10
AM16281V1
Ptot
(W)
120
24
80
16
40
8/22
50
75 100 125 150
f(kHz)
AM16284V1
Ptot
(W)
32
25
10
Figure 11. Power dissipation vs. case

temperature for TO-220FP
160
Rectangular current shape

(duty cycle= 0.5, VCC= 400 V
Rg = 10 , VGE= 0/15V, TJ= 175C
0
1
f(kHz)
Figure 10. Power dissipation vs. case

temperature for DPAK and TO-220
TC(C)
Figure 9. Collector current vs. frequency for

TO-220FP
60
20
125
TC(C)
DocID023740 Rev 4
0
0
25
50
75
100 125
TC(C)

Figure 12. VCE(sat) vs. junction temperature
AM16290V1
VCE(sat)
(V)
Figure 13. VCE(sat) vs. collector current
AM16291V1
VCE(sat)
(V)
VGE= 15 V
VGE= 15 V
2.3
TJ = 175 C
2.2
2.1
TJ = 25 C
IC= 40 A
1.9
1.8
1.7
TJ = -40 C
IC= 20 A
1.4
1.5
IC= 10 A
1.3
-75
-25
25
75
125 TJ(C)
Figure 14. Forward bias safe operating area for

D2PAK and TO-220
1.0
0
10
30
20
Figure 15. Thermal impedance for D2PAK and

TO-220
AM16280V1
IC
(A)
IC(A)
ZthTO2T_B
it
K
VCE
(sa
t)
lim
=0.5
0.2
10
0.1
100 s
0.05
-1
10
0.02
1 ms
Zth=k Rthj-c
=tp/
0.01
(single pulse TC=25C,
TJ<=175C; VGE=15V)
Single pulse
tp
-2
0.1
1
10
100
VCE(V)
Figure 16. Forward bias safe operating area for

TO-220FP
10 -5
10
-4
-2
-3
10
-1
10
10
10
Figure 17. Thermal impedance for TO-220FP
AM16283V1
ZthTOF2T_B
lim
it
IC
(A)
tp (s)
=0.5
(sa
t)
1 s
VCE
0.2
-1
10
0.1
10
0.05
100 s
1 ms
0.02
-2
Zth=k Rthj-c
=tp/
0.01
10
Single pulse
(single pulse TC=25C,

TJ<=175C; VGE=15V)
tp
-3
0.1
1
10
100
VCE(V)
10 -5
10
DocID023740 Rev 4
-4
10
-3
10
-2
10
-1
10
10
tp (s)
9/22
Figure 18. Diode VF vs. forward current

AM16293V1
VF
(V)
TJ= -40 C
VGE
(V)
AM16294V1
VCC= 400 V
IC= 20 A
16
2.3
12
TJ= 25 C
1.9
Figure 19. Gate charge vs. gate-emitter voltage
8
TJ= 175 C
1.5
4
1.1
10
30
20
0
0
IF(A)
50
40
Figure 20. Capacitance variations vs. VCE

AM16295V1
C
(pF)
80
40
120
Qg(nC)
Figure 21. Switching losses vs. gate resistance

AM16296V1
E
(J)
Cies
EON
750
1000
650
Coes
550
100
EOFF
Cres
450
VCC= 400 V, VGE = 15V,
IC = 20 A, TJ = 175C
10
0.1
10
VCE(V)
Figure 22. Switching losses vs. collector

current
AM162961V1
E
(J)
1000
350
0
20
10
40 RG()
30
Figure 23. Switching losses vs. temperature

AM16297V1
E
(J)
EON
400
800
EOFF
EON
600
EOFF
300
400
VCC= 400 V, VGE = 15V,
Rg = 10 , TJ = 175C
200
10
10/22
20
30
IC(A)
VCC= 400 V, VGE = 15V,

Rg = 10 , IC = 20 A
200
25
DocID023740 Rev 4
75
125
TJ(C)
Figure 24. Short-circuit time and current vs. VGE

AM16298V1
Isc
tsc
(s)
16
(A)
tsc
Isc
350
12
250
150
VCC= 360 V, Rg = 10
4
10
11
12
13
50
14 VGE(V)
DocID023740 Rev 4
11/22
Test circuits
Test circuits
Figure 25. Test circuit for inductive load
switching
Figure 26. Gate charge test circuit
AM01504v1
Figure 27. Switching waveform
AM01505v1
Figure 28. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ta
tb
10%
Tr(Voff)
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
12/22
DocID023740 Rev 4
AM01507v1
Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.7
0.75
F1
1.15
1.70
F2
1.15
1.70
4.95
5.2
G1
2.4
2.7
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9.3
Dia
3.2
DocID023740 Rev 4
13/22

Figure 29. TO-220FP drawing
7012510_Rev_K_B
14/22
DocID023740 Rev 4
Table 10. TO-220 type A mechanical data

mm
Dim.
Min.
Typ.
Max.
4.40
4.60
0.61
0.88
b1
1.14
1.70
0.48
0.70
15.25
15.75
D1
1.27
10
10.40
2.40
2.70
e1
4.95
5.15
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
3.75
3.85
2.65
2.95
DocID023740 Rev 4
15/22

Figure 30. TO-220 type A drawing
BW\SH$B5HYB7
16/22
DocID023740 Rev 4
Table 11. DPAK mechanical data

mm
Dim.
Min.
Typ.
Max.
4.40
4.60
A1
0.03
0.23
0.70
0.93
b2
1.14
1.70
0.45
0.60
c2
1.23
1.36
8.95
9.35
D1
7.50
10
E1
8.50
10.40
2.54
e1
4.88
5.28
15
15.85
J1
2.49
2.69
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0
DocID023740 Rev 4
17/22

Figure 31. DPAK drawing
0079457_T
Figure 32. DPAK footprint(a)

16.90
12.20
5.08
1.60
3.50
9.75
a. All dimension are in millimeters
18/22
DocID023740 Rev 4
Footprint
Packaging mechanical data

Table 12. DPAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
B0
15.7
15.9
1.5
1.5
1.6
12.8
D1
1.59
1.61
20.2
1.65
1.85
24.4
11.4
11.6
100
K0
4.8
5.0
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
50
0.25
0.35
23.7
24.3
DocID023740 Rev 4
Min.
Max.
330
13.2
26.4
30.4
19/22

Figure 33. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
E
F
W
K0
B0
A0
P1
D1
User direction of feed
Bending radius
User direction of feed
AM08852v2
Figure 34. Reel

T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
20/22
DocID023740 Rev 4
Revision history
Revision history
Table 13. Document revision history
Date
Revision
03-Oct-2012
Initial release.
18-Mar-2013
Added new order code STGF20H60DF, mechanical data Table 9 and

Figure 29 on page 14.
Added Chapter 2.1: Electrical characteristics (curves).
22-Mar-2013
Document status promoted from preliminary to production data.
Updated PTOT in Table 2: Absolute maximum ratings, RthJC in

Table 3: Thermal data and Figure 10: Power dissipation vs. case
temperature for DPAK and TO-220.
Updated Section 4: Package mechanical data for TO-220.
03-Jun-2013
Changes
DocID023740 Rev 4
21/22
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22/22
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STGB20H60DF,

High speed switching

Figure 1. Internal schematic diagram

Table 1. Device summary

Tape and reel

STGB20H60DF, STGF20H60DF, STGP20H60DF

Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

STGB20H60DF, STGF20H60DF, STGP20H60DF

Collector-emitter voltage (VGE = 0)

Pulsed collector current

Continuous forward current TC = 25 C

Continuous forward current at TC = 100 C

Pulsed forward current

Storage temperature range

Operating junction temperature

1. Limited by maximum junction temperature.

Table 3. Thermal data

Thermal resistance junction-case IGBT

Thermal resistance junction-case diode

Thermal resistance junction-ambient

STGB20H60DF, STGF20H60DF, STGP20H60DF

Gate threshold voltage

Collector cut-off current

Total gate charge

STGB20H60DF, STGF20H60DF, STGP20H60DF

Table 6. Switching characteristics (inductive load)

Turn-on delay time

Current rise time

Turn-on current slope

Turn-on current slope

Off voltage rise time

Off voltage rise time

Turn-off delay time

Current fall time

Short-circuit withstand time

VCC 360 V, VGE = 15 V

Current fall time

Turn-off delay time

Table 7. Switching energy (inductive load)

Turn-on switching losses

Turn-on switching losses

Turn-off switching losses

Total switching losses

Total switching losses

Energy losses include reverse recovery of the diode.

2. Turn-off losses include also the tail of the collector current.

STGB20H60DF, STGF20H60DF, STGP20H60DF

Table 8. Collector-emitter diode

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

STGB20H60DF, STGF20H60DF, STGP20H60DF

Electrical characteristics (curves)

Figure 2. Output characteristics (TJ = 25C)

Figure 3. Output characteristics (TJ = 175C)

Figure 4. Transfer characteristics

Figure 5. Normalized VGE(th) vs junction

STGB20H60DF, STGF20H60DF, STGP20H60DF