JOURNAL OF DISPLAY TECHNOLOGY, VOL. 9, NO.

4, APRIL 2013

255

Performance Improvement of Nitride-Based

Light-Emitting Diode With a Thin
Mg-Delta-Doped Hole Injection Layer
Yulun Xian, Shanjin Huang, Zhiyuan Zheng, Bingfeng Fan, Zimin Chen, Zhisheng Wu, Gang Wang,
Baijun Zhang, and Hao Jiang

AbstractThe performance of InGaN/GaN multiple quantum

wells (MQWs) blue light-emitting diodes (LEDs) was improved
by inserting a thin Mg-delta-doped hole injection layer at the end
of the MQWs. The forward- and reverse-leakage currents were
significantly reduced compared with those of the LEDs without
the inserting layer. The light output power was enhanced by 13%
at a 350 mA injection current. The improved performance could
be ascribed to the dislocation suppression and hole concentration
enhancement in the p-type GaN by inserting the Mg-delta-doped
structure.
Index TermsGaN LED, Mg-delta-doped, p-GaN.

I. INTRODUCTION

ECENTLY, GaN based light-emitting diodes (LEDs)

with InGaN/GaN multiple quantum wells (MQWs)
have attracted a great deal of attention for their successful
commercial application. Extensive works had been reported on
achieving high internal quantum efficiency (IQE) in LEDs by
using QW designs that can address the charge separation issues.
The related representative QW designs include semi/non-polar
InGaN QWs [1], [2] and polar QWs structures with large
electron-hole wavefunction overlap such as (1) Staggered QW
[3][8], (2) Type-II QW [9][11], (3) InGaN-delta-AlGaN QW
[12], [13], (4) InGaN-delta-InN QW [14], and (5) Strain-compensated QW [15], [16]. On the other hand, the efficiency
droop effect caused by carrier leakage (thermionic carrier
leakage and polarization-induced leakage) [17][20] and/or
Auger processes [21][23], which strongly limits the QE and
hampers the further development of nitride-based LEDs, has
been widely reported.
To fabricate the high brightness GaN based LEDs with high
IQE and low efficiency droop, achieving the efficient hole injecManuscript received September 29, 2012; revised October 08, 2012; accepted
October 08, 2012. Date of publication January 18, 2013; date of current version
March 15, 2013. This work was supported by the National Basic Research Program (973 program) of China under Grant 2012CB619302 and by the National
High Technology Research and Development Program (863 program) of China
under Grant 2011AA03105.
The authors are with the State Key Laboratory of Optoelectronic Materials
and Technologies, Sun Yat-sen University, Guangzhou 510275, China (e-mail:
yulunxian@gmail.com; shanjin.h@gmail.com; zyzheng_sysu@126.com;
binzsu@163.com; mzcmzcmzcmzc4@126.com; wuzhish@mail.sysu.edu.cn;
stswangg@mail.sysu.edu.cn; zhbaij@mail.sysu.edu.cn; stsjiang@mail.sysu.
edu.cn).
Color versions of one or more of the figures are available online at http://
ieeexplore.ieee.org.
Digital Object Identifier 10.1109/JDT.2012.2226205

tion is one of the most important issues. Recently, Mg doping in

the barriers of InGaN/GaN MQWs was reported to enhance the
hole injection efficiency in LEDs [24]. But generally, the hole
injection efficiency in GaN based LEDs is limited by the low
hole concentration of p-GaN layer due to the high activation energy of Mg atoms, the formation of Mg-N-H complex, and the
self-compensation effect [25][27]. Moreover, the hole injection layer in LEDs is usually grown at a relatively low temperature to suppress the diffusion of Mg into the multiple quantum
wells (MQWs) and to reduce the thermal annealing effect on the
InGaN quantum wells [28], [29]. The low growth temperature,
however, may lead to material degradation and consequent deterioration of device performance, such as leakage current and
reliability [30]. It is thus important to deposit hole injection layer
with high hole concentration and high material quality. To date,
a number of researches have demonstrated that Mg delta doping
is an effective method to decrease the Mg activation energy and
then enhance the hole concentration of p-GaN [31], [32]. Besides, the growth interruption during the delta-doping process is
also benefit to block the dislocations and improve the material
quality of the subsequent epilayers [31][36]. However, there
are only a few reports on the fabrication and characterization
of GaN based optoelectronic devices incorporating p-type layer
with Mg-delta-doping, in which the Mg-delta-doped layer was
commonly used to replace the whole uniformly doped p-GaN
layer of the devices [36][38].
In this work, a thin Mg-delta-doped layer has been inserted
at the end of MQWs of InGaN/GaN blue LEDs. The then fabricated devices were characterized and compared to those without
the inserted layer. By using this inserted layer, we aimed to
(1) increase carrier concentration and then enhance the hole injection; (2) improve the crystal quality of the consequent uniformly-doped p-GaN layer; and (3) save the growth time compared with the case in which the whole p-type layer is delta
doped.
II. EXPERIMENTAL DETAILS AND RESULTS
The samples used in this investigation were grown on
2-inch c-plane sapphire substrates in a Thomas Swan 3 2
close-coupled showerhead (CCS) MOCVD system. Ammonia
(
), trimethylgallium (TMGa), and bis-cyclopentadienyl
) were used as precursors for nitrogen, galmagnesium (
lium, and magnesium, respectively. The growth conditionsof
delta-doping process were first optimized to achieve high hole
concentration in the Mg-delta-doped layer, which was grown by

1551-319X/$31.00 2013 IEEE

256

Fig. 1. RT-PL spectra of the optimized Mg-delta-doped and Mg-uniformlydoped layers. The inset shows the schematic diagram of the Mg-delta-doping
process.

alternatively opening and terminating the TMGa and Cp2Mg

source in the p-GaN growth process, as shown in Fig. 1. To
optimize the Mg-delta doping, GaN spacing thickness (
),
) and
flow rate (
) were
Mg depositing time (
varied to deposit Mg-delta-doped p-GaN layers on 2.5
undoped-GaN templates. The
,
, and
were ranged
from 180 to 360 sccm, 10 to 20 nm, and 24 to 48 s respectively.
The thickness and the growth temperature of delta-doped layers
were kept at 500 nm and 920 , respectively, for all samples. To
activate the Mg dopant, post-annealing of the as-grown samples
was carried out in
ambient at 650 . It was found that the
optimal growth conditions for the Mg-delta-doped layer in our
case are
,
and
.
Free hole concentration as high as to 6.7
was
achieved under these conditions, which is
higher
than that of our optimized uniformly-doped p-GaN layer
(
) grown at the same temperature. Furthermore, the sheet resistivity for the 500 nm Mg-delta-doped
layer was 2.74
, which is lower than that of the
Mg-uniformly-doped layer (3.77
).
Fig. 1 shows the room-temperature photoluminescence
(PL) spectra of the optimized Mg-delta-doped and Mg-uniformly-doped samples. To eliminate the interference effect,
Gaussian fitting was applied to determine the emission peaks.
Blue luminescence (BL) band centered around 2.9 eV was
observed for the two samples. The BL band is related to the
deep donor-acceptor pair (DDAP) recombination [39], [40].
Based on the Gaussian fittings, the dominant BL emission lines
of the uniformly-doped and delta-doped sample were 2.86 eV
and 2.89 eV, respectively. The blue shift of BL band peak in
delta-doped sample is ascribed to the increase of coulomb energy resulting from the reduction of average distance between
the donor-acceptor pair in the thin Mg-delta-doped region [41].
It can also be observed that the Mg-delta-doped sample shows
additional violet luminescence (VL) emission bands peaked at
3.41 eV and 3.27 eV. The 3.41 eV band isascribed to the near
band-edge emission of GaN, while the 3.27 band is claimed to
be associated with the transitions between the GaN conduction

JOURNAL OF DISPLAY TECHNOLOGY, VOL. 9, NO. 4, APRIL 2013

Fig. 2. - characteristics of LED I and LED II. The inset shows the schematic
structure of the LED I.

band and the Mg shallow acceptor level. The presence of the

3.41 eV band and the 3.27 eV band evidences a reduction
of nonradiative recombination centers and a lowering of Mg
ionization energy in the Mg-delta-doped sample, respectively.
The PL results therefore indicate that higher material quality is
achieved by Mg-delta-doping.
The optimized Mg-delta-doping growth conditions were then
applied to deposit a thin delta-doped layer consisting of two
periods inserted into the InGaN/GaN MQW blue LED structure (denoted as LED I). Fig. 2 illustrates the structure of LED
I comprising a 25 nm LT-GaN buffer layer, a 2.5
-thick
undoped GaN layer, a 2
-thick Si-doped n-GaN (
) layer, a 5-period
/GaN (2.5 nm/10
nm) MQWs with a 20 nm undoped GaN last barrier layer (also
served as the first space layer of delta doping), a Mg-deltadoped layer, a 160 nm Mg-uniformly-doped layer, and finally a
8 nm Mg-doped ohmic contact layer. A conventional LED structure (denoted as LED II) without the inserted Mg-delta-doped
layer was also deposited as a control sample. For processing,
LED chips (1 1
) were fabricated using a conventional
mesa structure method. Semi-transparent Ni/Au layers were deposited as the p-type ohmic contacts and Cr/Pt/Au metallization
was employed as n-type ohmic contacts and p-type electrode
pads, respectively.
The measured current-voltage ( - ) characteristics of LED
I and LED II are shown in Fig. 2. In the reverse-bias and the
low forward-bias (
) regions, the currents of LED II is
substantially larger than that of LED I. At a typical reverse bias
of
, the leakage current of LED I was
,
which is more than one order of magnitude lower than that
of LED II. It was proposed that the excess current at the low
forward-bias region of
is generally caused by a trap
or dislocation related tunneling process [42], [43]. Moreover,
the higher reverse-leakage currents of the LED II may also
result from defects such as dislocations. To clarify the reason
for the improved leakage characteristics of LED I, atomic force
microscopy (AFM) was performed to investigate the morphology of the etched surfaces of LED epi-structures (LED I
and II). Wet-chemical etching method using hot phosphoric

XIAN et al.: PERFORMANCE IMPROVEMENT OF NITRIDE-BASED LED

Fig. 3. (a) AFM images of the wet-chemical etched surfaces of (a) LED I and
areas.
(b) LED II epi-structures over 10 10

Fig. 4. - characteristics of the LED I and LED II. The inset (a) shows the
output power ratio of LED I to LED II. The inset (b) shows schematic band
structure of hole-injection region in LED I.

acid (
) was employed to treat the surfaces. The dislocation density was evaluated by counting etch pits. Fig. 3
shows the AFM images (10 10
) revealing the etching
pits on the surfaces of LED I and LED II after the wet etching.
It was observed that there are two kinds of etch pits on the
surface of LED II. One kind is large hexagonal shape with
diameter about 700 nm, and the other is small dark dots with
diameters in range of
. The density of small dark
. AFM images over 2 2
scan
dots was
areas verified that the shape of small dark dots is also inverted
hexagonal pyramid. For the etched surface of LED I type
structure, the density of small dark dots was 4
and
no large hexagonal pits could be found. It has been reported
that the small etch pits with inverted hexagonal pyramid shape
are related to the mixed and screw dislocations, while the large
hexagonal pits originate from open-core screw dislocation.
Therefore, the reduction of the small-size etch pits and the
disappearance of large-size pits in LED I indicates that the
inserted Mg-delta-doped layer can effectively block the screw
dislocations and hence improve the quality of the subsequent
p-GaN layer. The improved leakage current characteristics of
LED I can thus be attributed to the reduction of the screw dislocations, especially the open-core screw dislocations, which
are the main factor resulting in leakage current [42].

257

Fig. 4 illustrates the light output power-current ( - ) characteristics of LED I and LED II. The - curves show that the light
output powers were obviously increased for LED I. At the injection current of 350 mA, the light outputs of LED I and LED II
are 88 mW and 78 mW, respectively. Accordingly, the LED I exhibits 13% improvement on the output power. The improvement
of light output power could be ascribed to the higher hole concentration in the Mg-delta-doped hole-injection layer leading to
an enhancement of the carrier injection. It was also found that
the light output power of LED I demonstrated larger enhancement under lower injection current condition. To clearly show
this phenomenon, the output power ratio of LED I to LED II is
plotted as a function of the injection current in the inset of Fig. 4.
.
At 50 mA, the output power improvement of LED I is
We suggest that such a trend of the output power improvement
may be due to the special band structure of LED I, as schematically illustrated in the insert of Fig. 4. The increment of Mg
ions concentration in the thin Mg-delta-doped region decreases
the Fermi level and raises the local conduction band [41]. The
delta-doped region with higher potential may serve as an electron blocking layer. At the low injection-current condition, the
inserted Mg-delta-doped layer can partially block the electron
overflow and thereby enhance the electron-hole radiative combination in the MQWs. At the high-injection current condition,
however, the delta-doped layer can no longer effectively block
the electrons due to the decreased potential difference between
the conduction bands of the last GaN barrier and the inserted
delta-doped layer, resulting in a reduction of the light output
improvement.
III. CONCLUSIONS
In summary, GaN/InGaN blue LEDs with a thin Mg-deltadoped hole-injection layer inserted at the end of the MQWs were
fabricated and characterized. The fabricated LEDs exhibited
that the light output power was obviously enhanced compared
to the LEDs without the inserted delta-doped layer, which is attributed to the high hole concentration achieved in the Mg-deltadoped layer. Leakage current characteristics were also significantly improved due to the dislocation suppression effect by
Mg-delta-doping process.
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Yulun Xian received the B.S. degree in physics and the Ph.D. degree from Sun
Yat-sen University, Guangzhou, China, in 2006 and 2011, respectively.
His current research areas include the packaging process of high-power white
LEDs, optical design for LED application, and fabrication of high-power LED
chips.

Shanjin Huang received the B.S. degree in optical information science and
technology in 2008 from Sun Yat-sen University, Guangzhou, China, where he
is currently pursuing the Ph.D. degree in the School of Physics and Engineering.

Zhiyuan Zheng received the B.S. degree in optical information science and
technology in 2008 from Sun Yat-sen University, Guangzhou, China, where he
is currently pursuing the Ph.D. degree with the School of Physics and Engineering.

XIAN et al.: PERFORMANCE IMPROVEMENT OF NITRIDE-BASED LED

Bingfeng Fan, photograph and biography not available at the time of

publication.

Zimin Chen, photograph and biography not available at the time of publication.

Zhisheng Wu, photograph and biography not available at the time of

publication.

259

Gang Wang, photograph and biography not available at the time of publication.

Baijun Zhang, photograph and biography not available at the time of

publication.

Hao Jiang, photograph and biography not available at the time of publication.