Solution of Homework problems 2 in Section 10.

2
Chapter 10, Solution 1.
Known quantities:
Transistor diagrams, as shown in Figure P10.1:
(a) pnp, VEB = 0.6 V and VEC = 4.0 V
(b) npn, VCB = 0.7 V and VCE = 0.2 V
(c) npn, VBE = 0.7 V and VCE = 0.3 V
(d) pnp, VBC = 0.6 V and VEC = 5.4 V
Find:
For each transistor shown in Figure P10.1, determine
whether the BE and BC junctions are forward or
reverse biased, and determine the operating region.
Analysis:
(a) VBE = - 0.6 V for a pnp transistor implies that the BE junction is forward-biased.
VBC = VEC - VEB = 3.4 V. The CB junction is reverse-biased. Therefore, the transistor is in the
active region.
(b) VBC = - 0.7 V for a npn transistor implies that the CB junction is reverse-biased.
VBE = VBC - VEC = -0.5 V. The BE junction is reverse-biased. Therefore, the transistor is in the
cutoff region.
(c) VBE = 0.7 V for a npn transistor implies that the BE junction is forward-biased.
VBC = VEC - VEB = 0.4 V. The CB junction is forward-biased. Therefore, the transistor is in the
saturation region.
(d) VBC = 0.6 V for a pnp transistor implies that the CB junction is reverse-biased.
VBE = VBC VEC = - 4.8 V. The BE junction is forward-biased. Therefore, the transistor is in
the active region.
Chapter 10, Solution 2.
Known quantities:
Transistor type and operating characteristics:
a) npn, VBE = 0.8 V and VCE = 0.4 V
b) npn, VCB = 1.4 V and VCE = 2.1 V
c) pnp, VCB = 0.9 V and VCE = 0.4 V
d) npn, VBE = - 1.2 V and VCB = 0.6 V
Find:
The region of operation for each transistor.

Analysis:
a) Since VBE = 0.8 V, the BE junction is forward-biased. VCB = VCE + VEB = - 0.4 V. Thus, the
CB junction is forward-biased. Therefore, the transistor is in the saturation region.
b) VBE = VBC + VCE = 0.7 V. The BE junction is forward-biased.
VCB = 1.4 V. The CB junction is reverse-biased. Therefore, the transistor is in the active
region.
c) VCB = 0.9 V for a pnp transistor implies that the CB junction is forward-biased.
VBE = VBC VCE = - 1.3 V. The BE junction is forward-biased. Therefore, the transistor is in
the saturation region.
d) With VBE = - 1.2 V, the BE junction is reverse-biased.
VCB = - 0.6 V. The CB junction is reverse-biased. Therefore, the transistor is in the cutoff
region.
Chapter 10, Solution 3.
Known quantities:
The circuit of Figure P10.3:

IC
100 .
IB

Find:
The operating point and the state of the transistor.
Analysis:
VBE 0.6 V and the BE junction is forward biased.

VCC 820 10 3 I B VBE 910 I E & I E I C I B 101I B

VCC VBE
12 0.6

12.5A
3
820 10 910 101 911910
I C I B 1.25mA

IB

Writing KVL around the right-hand side of the circuit:

VCC I C RC VCE I E RE 0

VCE VCC I C RC I C I B RE 12 (1.25)(2.2) (1.25 0.0125)(0.910) 8.1V

VBC VBE VCE 0.6 8.1 7.5 V : the BC junction is reverse biased
VCE VBE

The transistor is in the active region.

Chapter 10, Solution 4.

Known quantities:
The magnitude of a pnp transistor's emitter and base current, and the magnitudes of the voltages
across the emitter-base and collector-base junctions:
IE = 6 mA, IB = 0.1 mA and VEB = 0.65 V, VBC = 7.3 V.
Find:
a)
VCE.
b)
IC .
c) The total power dissipated in the transistor, defined as P VEC I C VEB I B .
Analysis:
a) VEC = VBC + VEB = 7.3 + 0.65 = 7.95 V.
b) IC = IE - IB = 6 - 0.1 = 5.9 mA.
c) The total power dissipated in the transistor can be found to be:
P VEC I C VEB I B 7.95 5.9 10 3 0.65 0.1 10 3 46.97 mW

Chapter 10, Solution 5.

Known quantities:
The circuit of Figure P10.5, assuming the BJT has
V = 0.6 V.
Find: Change 15 V to 15 V
The emitter current and the collector-base voltage.
Analysis:

15 VBE 15 0.6

480 A
30000 30000

Applying KVL to the right-hand side of the circuit, I E

Then, on the left-hand side, assuming >> 1:
10 I C RC VCB 0

VCB 10 I C RC 10 480 10 6 15 10 3 2.8 V

Chapter 10, Solution 6.

Known quantities:
The circuit of Figure P10.6, assuming the BJT has
VBE 0.6 V and =150.
Find:
The operating point and the region in which the
transistor operates.
Analysis:
Define RC 3.3k, RE 1.2k, R1 62k, R2 15k, VCC 18V
By applying Thevenins theorem from base and mass, we have
R B R1 || R 2 12.078 k
V R2 V 3.5 V
BB
CC
R1 R2
V BB V BE
IB
15 A
R B R E (1 )
I C I B 2.25 mA
VCE VCC RC I C R E I E 18 3300 2.25 10 3 1200 151 15 10 6 7.857 V

From the value of VCE it is clear that the BJT is in the active region.
Chapter 10, Solution 7.
Known quantities:
The circuit of Figure P10.7, assuming the BJT has
V 0.6 V .
VCC = 20V
Find:
The emitter current and the collector-base voltage.
Analysis:
Applying KVL to the right-hand side of the circuit,
VBB I E RE VEB 0
V VEB 20 0.6
I E BB

497.4 A . Since 1 , I C I E 497.4 A

RE
39 10 3
Applying KVL to the left-hand side: VCB I C RC VCC 0
VCB I C RC VCC 497.4 20 10 3 20 10.05V

VBB = 20V

Chapter 10, Solution 9.

Known quantities:
The collector characteristics for a certain transistor,
as shown in Figure P10.9.
Find:
a)

The ratio IC/IB for VCE = 10 V and

I B 100 A, 200 A, and 600 A

b) VCE, assuming the maximum allowable collector

power dissipation is 0.5 W for I B 500 A .
Analysis:
a) For IB = 100 A and VCE = 10 V, from the characteristics, we have IC = 17 mA. The ratio IC /
IB is 170.
For IB = 200 A and VCE = 10 V, from the characteristics, we have IC = 33 mA. The ratio IC /
IB is 165.
For IB = 600 A and VCE = 10 V, from the characteristics, we have IC = 86 mA. The ratio IC /
IB is 143.
b) For IB = 500 A, and if we consider an average from a., we have IC = 159500 10-3= 79.5
mA. The power dissipated by the transistor is P VCE I C VBE I B VCE I C , therefore:
P
0.5
VCE

6.29 V .
I C 79.5 103
Chapter 10, Solution 10.

Known quantities:
Figure P10.10, assuming both transistors are
silicon-based with 100 .
Find:
a) IC1, VC1, VCE1.
b) IC2, VC2, VCE2.
Analysis:
a)
From KVL:
30 I B1RB1 VBE1 0

30 0.7
I B1
39.07 A
750 103
I C1 I B1 3.907 mA

VC1 30 RC1I C1 30 3.907 6.2 5.779 V

VCE1 VC1 5.779 V .

b) Again, from KVL: 5.779 VBE 2 I E 2 RE 2 0

I E2

5.779 0.7
4.7 103

1.081 mA

and I C 2 I E 2 1 1.081 101 1.07 mA .

VCE 2 30 (1.07) ( 20 4.7) 3.574 V .

Also, 30 I C 2 ( RC 2 RE 2 ) VCE 2 0

Finally, I C 2

30 VC 2
RC 2

100

VC 2 30 (1.07) ( 20) 8.603 V .

Chapter 10, Solution 11.

Known quantities:
Collector characteristics of the 2N3904 npn
transistor, see data sheet pg. 560.
Find:
The operating point of the transistor in Figure
P10.11, and the value of at this point.
Analysis:
Construct a load line. Writing KVL, we have: 50 5000 I C VCE 0 .
Then, if I C 0 , VCE 50 V ; and if VCE 0 , I C 10 mA . The load line is shown
superimposed on the collector characteristic below:
The operating point is at the intersection of the
load line and the I B 20 A line of the
characteristic. Therefore, I CQ 5 mA and
VCEQ 20 V .
Under these conditions, an 5 A increase in
I B yields an increase in I C of approximately
6 5 1 mA . Therefore,
I
1 10 3
C
200
I B 5 10 6

The same result can be obtained by checking the

hFE gain from the data-sheets corresponding to 5 mA.

Load line

Chapter 10, Solution 14.

Known quantities:
The circuit of Figure P10.14, VCEsat=0.1V, VBEsat=0.6V,
and =50.
Find:
The base voltage required to saturate the transistor.
Analysis:
The collector current is

IC

12 0.1
11.9 mA
1

The base current is

I
11.9
IB C
0.238mA 238A

50

And since
V VBEsat
I B BB
mA
10
Therefore,
V VBB 0.238 mA 10k 0.6 2.98 V

Chapter 10, Solution 16.

Known quantities:
Collector characteristics of 2N3904 npn transistor; Transistor
circuits;
Find:
The operating point;
Analysis:
From KVL,

50 5kI C VCE 5k ( I C 20 A) 0

or

VCE 10kI C 50 0.1 49.9

If VCE 0 , I C

49.9
4.99mA , and if I C 0 , VCE 49.9V .
10k

The load line is shown superimposed on the collector

characteristic below:
The operating point is at the intersection of the load line and the
I B 20 A line of the characteristic. Therefore, I CQ 3mA and
VCEQ 8V .
Under these conditions, a 10 A increase in I B yields an
increase in I C of approximately 5mA 3mA 2mA . Therefore,

I C
2mA

200
I B 10A

Addition of the emitter resistor effectively increased the current

gain by decreasing the magnitude of the slope of the load line.

Chapter 10, Solution 17.

Known quantities:
For the circuit shown in Figure 10.14 in the text:

Voff 0 V, Von 5 V, I B 5 mA, RB 1 k, VCC 5 V, V 0.7 V, VCEsat 0.2 V, 95,

V LED 1.4 V, I LED 10 mA, Pmax 100 mW

Find:
Range of RC.
Analysis:
RC

VCC V LED VCEsat 5 1.4 0.2

340
I LED
0.01

From the maximum power

I LED max
RC

Pmax
0.1

71 mA
V LED 1.4

VCC V LED VCEsat

47
I LED max

Therefore, RC [47, 340]

Chapter 10, Solution 22.

Known quantities:
For the circuit shown in Figure 10.14 in the text:
Voff 0 V, Von 5 V, I B max 1 mA, RB 1 k, R 12 , VCC 13 V, V 0.7 V, VCEsat 1 V,
IC 1A

Find:

Minimum value of that will ensure the correct operation

of the fuel injector.
Analysis:
V VCEsat 13 1
I C CC

1A
R
12
min

IC
I B max

1
1 10 3

1000

Chapter 10, Solution 25.

Known quantities:
The circuit of Figure P10.25: IC = 40 mA; Transistor large
signal parameters.
Find:

Design a constant-current battery charging circuit, that is,

find the values of VCC, R1, R2 that will cause the transistor
Q1 to act as a 40-mA constant current source.
Assumptions:
Assume that the transistor is forward biased. Use the
large-signal model with = 100.
Analysis:
The battery charging current is 40 mA, IC = 40 mA.
Thus, the emitter current must be I E

1
I E 40.4mA .

Since the base-emitter junction voltage is assumed to be 0.6 V, then resistor R2 has a voltage:
V2 V z V 5.6 0.6 5 V , so the required value of R2 to be:
R2

V
5

123.8
IE
0.0404

Since the only purpose of R1 is to bias the Zener diode, we can select a value that will supply
enough current fro the Zener to operate, for example R1 > 100 , so that there will be as little
current flow through this resistance as possible.
Finally, we need to select an appropriate supply voltage. VCC must be greater than or equal to the
sum of the battery voltage, the CE junction voltage and the voltage across R2. That is,
VCC 9 VCE 5 . A collector supply of 24 V will be more than adequate for this task.

Chapter 10, Solution 26.

Known quantities:
The circuit of Figure of P10.26.
Find:

Analyze the operation of the circuit and explain how I E

is decreasing until the battery is full.

Find the values of VCC, R1 that will result in a practical design.

Assumptions:
Assume that the transistor is forward biased.
Analysis:
When the Zener Diode works in its reverse breakdown area, it provides a constant voltage:
Vz 11 V . That means:
VB VZ 11 V .
When the transistor is forward biased, according to KVL,
VZ I BE RBE V Vbattery , where RBE is the base resistance.
As the battery gets charged, the actual battery charging voltage Vbattery will increase from 9.6 V
to 10.4 V.
As Vbattery increases gradually, VZ and V stay unchanged, then we can see that I BE will
decrease gradually.
So I E 1 I BE will also decrease at the same time.
Since the only purpose of R1 is to bias the Zener diode, we can select a value that will supply
enough current fro the Zener to operate, for example R1 > 100 , so that there will be as little
current flow through this resistance as possible.

Finally, we need to select an appropriate supply voltage. VCC must be greater than or equal to the
sum of the battery voltage, the CE junction voltage. That is, VCC 11 VCE . A collector supply
of 12 V should be adequate for this task.

Chapter 10, Solution 32.

Known quantities:
For the circuit shown in Figure P10.32:
VCC 12 V 130 R1 82 k
RE 0.5 k RL 16 .

R2 22 k

Find:
VCEQ

at the DC operating point.

Analysis:
Simplify the circuit by obtaining the Thvenin equivalent of the biasing network (R1,, R2, VCC) in
the base circuit:

V CC R2 12 22
VD : V BB = V TH = V OC = = = 2.538 V
R1+ R2 82 22
82 22
Suppress V CC : RB = Req = R1 R2 = = 17.35 k
R1+ R2 82 22
Redraw the circuit using the Thvenin equivalent. The "DC blocking" or "AC coupling" capacitors act as open
circuits for DC; therefore, the signal source and load can be neglected since this is a DC problem. Specify directions
of current and polarities of voltages.

Assume the transistor is operating in its active region. Then, the base-emitter junction is forward
biased.
V BEQ 700 mV [Si]

I EQ = [ + 1 ] I BQ

KVL : - V BB + I BQ R B + V BEQ + I EQ R E = 0
- V BB + I BQ R B + V BEQ + [ + 1 ] I BQ R E = 0

I BQ =

V BB - V BEQ
2.538 0.7
=
= 22.18 A

+
1

17350
130 1 500
RB
RE

6
= 2.906 mA
I EQ = + 1 I BQ = 130 + 1 22.18 10

KVL : - I EQ R E - V CEQ + V CC = 0
V CEQ = V CC - I EQ R E = 12 2.906 0.5 = 10.55 V

The collector-emitter voltage is greater than its saturation value (0.3 V for Silicon). Therefore
the initial assumption (operation in the active region) was correct and the solution is valid.

Chapter 10, Solution 33.

Known quantities:
For the circuit shown in Figure P10.33:
VCC 12 V 100
RB 100 k RC 3 k

VEE 4 V
R E 3 k

RL 6 k

RS 0.6 k vS 1 cos(6.28 103 t ) mV .

Find:
VCEQ

and the region of operation.

Analysis:
The "DC blocking" or "AC coupling" capacitors act as open circuits for
DC; therefore, the signal source and load can be neglected since this is a
DC problem. Specify directions of current and polarities of voltages.
Assume the transistor is operating in its active region; then, the baseemitter junction is forward biased and:
VBEQ 700 mV [ Si ]
I CQ I BQ

I EQ ( 1) I BQ

KVL : VEE I BQ RB VBEQ I EQ RE 0

I BQ

VEE VBEQ

RB 1 RE

4 0.7
8.189 A
100000 (100 1)(3000)

I CQ I BQ (100) 8.189 10 6 818.9A

I EQ ( 1) I BQ (100 1) 8.189 10 6 827.0 A
KVL : VEE I EQ RE VCEQ I CQ RC VCC 0

VCEQ VEE VCC I CQ RC I EQ RE 4 12 818.9 10 6 3000 827.0 10 10 6 3000

11 .06 V

The collector-emitter voltage is greater (more positive) than its saturation

value (+ 0.3 V for Silicon). Therefore the initial assumption (operation in
the active region) was correct and the solution is valid.
Notes:
1. DC power may be supplied to an npn BJT circuit by connecting the
positive terminal of a DC source to the collector circuit, or, by
connecting the negative terminal of a DC source to the emitter circuit,
or, as was done here, both.
2. In a pnp BJT circuit the polarities of the sources must be reversed. Negative to collector and
positive to emitter.
Chapter 10, Solution 35.
Known quantities:
For the circuit shown in Figure P10.35:
vS 3 V

100

RB 60 k

Find:
a) The value of RE so that I E is 1 mA.
b) RC so that VC is 5 V.
c) The small-signal equivalent circuit of the amplifier for RL 5k
d) The voltage gain.
Analysis:
(a) With RB 60 k and VB 3 V , applying KVL, we have
3 I B RB 0.6 (1 ) I B RE
2.4
IB
60k 101RE
I E 101

2.4
1mA
60k 101RE

Therefore,

101 2.4 60
1.81 k
101
(b) VCE 15 I C RC I E RE

From (a), we have I C I E 1 0.99 mA

15 5 1.81
8.27 k
Therefore, RC
0.99
RE

(c) The small signal equivalent circuit is shown below

I B

(d)

hie

VBE
I B

I BQ

vS h ie

VS
RB hiw

1
vout I C RL

h
oe

RB

RC

IB
h fe I

IC

1
RL
h oe

I out h fe I B
C 1 h
oe

0.6

60.6k
0.0099 10 3

Since hoe is not given, we can reasonably assume that 1/hoe is very large. Therefore,
v
100 RL
AV out
4.15
vs
RB hie

Chapter 10, Solution 36.

Known quantities:
For the circuit shown in Figure P10.36:
RC 200 k

+
v OUT

Find:
e) The operating point of the transistor.
f) Voltage gain vout vin ; current gain iout iin
g) Input resistance ri
h) Output resistance ro
Analysis:
(a) VB VCC

R2
6.1 V
R1 R2

RB R1 || R2 3749.87

Assuming VBE 0.6 V , we have

VEV VB VBE 5.5 V

V
I E E 22 mA
RE

IB

IE
0.088 mA
b 1

and

VCE VC VE V.CC RC I C 5.5

15 - 200 21.912 10 -3 5.5 5.12 V

(b) The AC equivalent circuit is shown on the

right:
hie

VBE
I B

I BQ

0 .6
0.088 10 3

6.82k

vout RE ( I B I C ) 250(250 1) I B
vin I B hie vout I B hie 250 251 I B

Therefore, the voltage gain is

v
AV out 0.902
vin

and

iout I B I C ( 1) I B

v
iin I B in I B ( I B hie 250 251 I B ) RB
RB

and the current gain is

iout
( 1) I B

12.84
iin
I B ( I B hie 250 251 I B ) RB
(c) To find the input resistance we compute:
vin I B hie 250 251 I B

iin I B ( I B hie 250 251 I B ) RB

Therefore. the input resistance is

v
ri in 3558
iin

(d) To find the output resistance we compute

vout RE ( I B I C ) 250(250 1) I B
iout I B I C ( 1) I B

Therefore, the output resistance is

v
ro out 250
iout

Chapter 10, Solution 41.

Known quantities:
The circuit given in Figure P10.41.
Find:
Show that the given circuit functions as an OR gate
if the output is taken at v01.
Analysis:
Construct a state table. This table clearly describes an AND gate when the output is taken at
vo1 .
v1

v2

Q1

Q2

Q3

vo1

vo2

off

off

on

5V

5V

off

on

off

5V

5V

on

off

off

5V

5V

5V

on

on

off

5V

Chapter 10, Solution 42.

Known quantities:
The circuit given in Figure P10.41.

Find:
Show that the given circuit functions as a NOR gate if the output is taken at v02.
Analysis:
See the state table constructed for Problem 10.41. This table clearly describes a NOR gate when
the output is taken at vo 2 .

Chapter 10, Solution 45.

Known quantities:
In the circuit given in Figure P10.45 the
minimum value of vin for a high input is 2.0 V.
Assume that the transistor Q1 has a of at least
10.
Find:
The range for resistor RB that can guarantee that
the transistor is on.
Analysis:
ic

5 0.2
2.4 mA , therefore, iB = iC/ = 0.24 mA.
2000

(vin)min = 2.0 V and (vin)max = 5.0 V, therefore, applying KVL:

-vin +RB iB + 0.6 = 0

v 0.6
RB in
. Substituting for (vin)min and (vin)max , we find the following range for RB:
iB
5.833 k RB 18.333k

or

Chapter 10, Solution 46.

Known quantities:
For the circuit given in Figure P10.46:
R1C R2C 10 k ,

R1B R2 B 27 k .

Find:
a) vB, vout, and the state of the transistor Q1 when vin
is low.
b) vB, vout, and the state of the transistor Q1 when vin
is high.

Analysis:
a)

vin is low Q1 is cutoff vB = 5 V Q2 is in saturation vout = low = 0.2 V.

b) vin is high Q1 is in saturation vB = 0.2 V Q2 is cutoff vout = high = 5 V.