Objective Oriented Learning Process Format RBT (OLF)

Branch: M.E. PED

Semester: I

Subject code & Title: 15PE14 & Design and Analysis of Inverters
T-L tools: PPT, Chalk and Talk

Unit/Lesson No: 1/2

Faculty name : A.Nandhakumar

Prerequisite Knowledge:
Semiconductor physics, BJT, Low power IGBT
1. Topic for Learning through evocation:
Construction Operation, Circuit model and switching characteristics of- IGBT

THE OPERATION MODES OF AN IGBT.mp4

2. Topic Introduction:
2.1. General Objective:
To understand the construction, operation, switching characteristics of operation of IGBT

2.2. Specific Objectives:

1. Explain the construction and operation of power IGBT. (S, E, M)
2. Represent the operational equivalent circuit of an IGBT.(E)
3. Illustrate the operating principle of IGBT in terms of the schematic construction and the
operational equivalent circuit. (E)
4. Exemplify the steady state output and transfer characteristics of an IGBT (E, M)
5. Interpret the manufacturers date sheet of an IGBT (E)

Knowledge Dimension

Taxonomy of Objectives
The Cognitive Process Dimension
Remember Understand
Apply
Analyse Evaluate

Create

A. Factual Knowledge
B. Conceptual
1, 2, 3, 5
4
Knowledge
C. Procedural
Knowledge
D. Meta
Cognitive
Knowledge
Explanatory Notes: (This is not the notes for the topic. It is an explanatory notes to remember the reason for doing a particular
mapping in the table above)
Factual Knowledge: It is a knowledge that contains the basic elementsstudents must know if they are to be acquainted with the discipline or to solve any
of the problems in it.
A. Conceptual Knowledge: It includes knowledge of categories and classifications and the relationships between and among them.
B. Procedural Knowledge:It is the knowledge that takes the form of series of logical steps to be followed. It is more skill oriented and can include
algorithms, techniques and methods.
C. Meta Cognitive Knowledge:It is the knowledge of ones own cognition.

To be used by teacher as a teaching learning process guideline for classrooms and laboratory

2.3: Key words:

IGBT, Output and transfer characteristics, Switching characteristics, Forward
Transconductance, Gate Emitter threshold voltage
2.4: Key diagrams (if any):

To be used by teacher as a teaching learning process guideline for classrooms and laboratory

3. Discussion:
The students will be asked to discuss the relevant topic among their team/other team/Faculty. The
students those who have not taken part will be noted and kindle them to do.

4. Mind Map :(It must revolve around the concept)

1. Cut-off region
2. Saturation
region
3. Active region

I) IGBT is a hybrid device which combines the advantages of MOSFET and

BJT.
ii) An IGBT is formed by adding a p+ collector layer on the drain drift layer of a
Power MOSFET.
(ii) Punch through IGBT has a thin n+ buffer layer between the p+ collector
layer and n-drain drift layer. They have significantly lower conduction loss.
(iii) The IGBT cell structure embeds a parasitic thyristor in it. Latching up of this
thyristor is prevented by special structuring of the body region and
increasing the effectiveness of the body shorting.
(iv) From the operational point of view an IGBT is a voltage controlled bipolar
device.

Characteristics Features
Modes of operation
POWER IGBT

Advantages

(i) The IGBTs have a slightly positive

temperature coefficient of the on-state
voltage drop which makes paralleling of
these devices simpler.
(ii) An IGBT does not exhibit second
break down phenomena as in the case of
a BJT

Disadvantages

(i) The maximum allowable collector current in an

IGBT is restricted by the static latch up
consideration.
(ii) The RBSOA of IGBT is rectangular for low
values of dvce/dt

To be used by teacher as a teaching learning process guideline for classrooms and laboratory

5. Summary:
1. IGBT is a hybrid device which combines the advantages of MOSFET and BJT.
2. An IGBT is formed by adding a p+ collector layer on the drain drift layer of a Power MOSFET.
3. Punch through IGBT has a thin n+ buffer layer between the p+ collector layer and n- drain drift layer. They have
significantly lower conduction loss.
4. The IGBT cell structure embeds a parasitic thyristor in it. Latching up of this thyristor is prevented by special
structuring of the body region and increasing the effectiveness of the body shorting.
5. From the operational point of view an IGBT is a voltage controlled bipolar device.
6. The operational equivalent circuit of an IGBT has an n channel MOSFET driving a p-n-p BJT.
7. Like other semiconductor devices on IGBT can also operate in the cut off active and saturation regions.
8. When the gate-emitter voltage of an IGBT is below threshold it operates in the cut off region.
9. For a given load resistance the operating point of an IGBT can be moved from cut off to saturation through the
active region by increasing the gate-emitter voltage.
10. In the active region, the collector current of an IGBT is determined by the gate-emitter voltage which can be
limited to a given maximum value to limit the fault current through
6. Assessment through Stimulating questions/Analogy/New ideas and Concepts:
1) The conduction losses in IGBT is
a. More than that of MOSFET
b. Lower than that of MOSFET
c. Equal to that of MOSFET
d. Equal to that of BJT
2) To detect an over - current fault condition, the most reliable method is to connect a
a. Current sensor across IGBT
b. Voltage sensor across IGBT
c. Current sensor in series with IGBT
d. Voltage sensor in series with IGBT
3. When latch-up occurs in an IGBT
a) Ig is no longer controllable
b) Ic is no longer controllable
c) the device turns off
d) Ic increases to a very high value

To be used by teacher as a teaching learning process guideline for classrooms and laboratory

4. A latched up IGBT can be turned off by

a) forced commutation of current
b) forced commutation of voltage
c) use of a snubber circuit
d) none of the mentioned

5. The static V-I curve of an IGBT is plotted with

a) Vce as the parameter
b) Ic as the parameter
c) Vge as the parameter
d) Ig as the parameter

6. Latch-up occurs in an IGBT when

a) Vce reaches a certain value
b) Ic reaches a certain value
c) Ig reaches a certain value
d) the device temperature reaches a certain value

5. In an IGBT, during the turn-on time

a) Vge decreases
b) Ic decreases
c) Vce decreases
d) none of the mentioned
6. Choose the correct statement
a) IGBTs have higher switching losses as compared to BJTs
b) IGBTs have secondary breakdown problems
c) IGBTs have lower gate drive requirements
d) IGBTs are current controlled devices
View Answer
7. The approximate equivalent circuit of an IGBT consists of
a) a BJT & a MOSFET
b) a MOSFET & a MCT
c) two BJTs
d) two MOSFETs

8. An IGBT is also known as

a) MOIGT (Metal oxide insulated gate transistor)
b) COMFET (Conductively modulated FET)
c) GEMFET (Grain modulated FET)
d) all of the mentio

To be used by teacher as a teaching learning process guideline for classrooms and laboratory

9. The body of an IGBT consists of a

a) p-layer
b) n-layer
c) p-n layer
d) metal
10. At present, the state-of-the-art semiconductor devices are begin manufactured using
a) Semiconducting Diamond
b) Gallium-Arsenide
c) Germanium
d) Silicon-Carbide

7. Stimulating Questions:
1. How latch up in IGBTs are avoided?
2. Why secondary breakdown does not exists in IGBT?
8. References: (Books/Periodicals/Journals)
1. M.H. Rashid, Hand Book of Power Electronics: Circuits, Devices and Application, New Delhi,
Prentice Hall of India, 2007.

Verified by Subject Expert:

Approved by HOD:

To be used by teacher as a teaching learning process guideline for classrooms and laboratory