Philips Semiconductors

Product specification

Thyristors
sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching
and
phase
control
applications.

PINNING - SOT82
PIN

QUICK REFERENCE DATA

SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM

PARAMETER

MAX. MAX. MAX. UNIT

BTA151Repetitive peak off-state

voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current

500R
500

650R
650

800R
800

7.5
12
100

7.5
12
100

7.5
12
100

A
A
A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

gate

tab

BTA151 series

anode

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

VDRM, VRRM Repetitive peak off-state

voltages
IT(AV)
IT(RMS)
ITSM

I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj

Average on-state current

RMS on-state current
Non-repetitive peak
on-state current

half sine wave; Tmb 109 C

all conduction angles
half sine wave; Tj = 25 C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/s

I2t for fusing

Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature

MIN.

MAX.

UNIT

-500R -650R -800R

5001
6501
800

7.5
12

A
A

100
110
50
50

A
A
A2s
A/s

-40
-

2
5
12
5
0.5
150
125

A
V
V
W
W
C
C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/s.
September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors
sensitive gate

BTA151 series

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-mb

Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient

Rth j-a

CONDITIONS

MIN.

TYP.

MAX.

UNIT

1.3

K/W

60

K/W

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

IGT
IL
IH
VT
VGT

Gate trigger current

Latching current
Holding current
On-state voltage
Gate trigger voltage

ID, IR

Off-state leakage current

VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 C
VD = VDRM(max); VR = VRRM(max); Tj = 125 C

0.25
-

2
10
7
1.4
0.6
0.4
0.1

4
40
16
1.75
1.5
0.5

mA
mA
mA
V
V
V
mA

MIN.

TYP.

MAX.

UNIT

50
200
-

130
1000
2

V/s
V/s
s

70

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

dVD/dt

Critical rate of rise of

off-state voltage

VD = 67% VDRM(max); Tj = 125 C;

exponential waveform
Gate open circuit
RGK = 100
ITM = 40 A; VD = VDRM; IG = 0.1 A;
dIG/dt = 5 A/s
VD = 67% VDRM(max); ITM = 20 A; VR = 25 V;
dITM/dt = 30 A/s; dVD/dt = 50 V/s;
RGK = 100

tgt
tq

Gate controlled turn-on

time
Circuit commutated
turn-off time

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors
sensitive gate

15

BTA151 series

Ptot / W
conduction
angle
degrees
30
60
90
120
180

10

Tmb(max) / C

BT151
form
factor

120

105.5

4
2.8
2.2
1.9
1.57

BT151

100
time
T
Tj initial = 25 C max

1.9

2.2

112

2.8

ITSM

IT

a = 1.57

ITSM / A

80

60

118.5

40
20

4
5
IT(AV) / A

125
8

Fig.1. Maximum on-state dissipation, Ptot, versus

average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).

1000

10
100
Number of half cycles at 50Hz

1000

Fig.4. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.

BT151

ITSM / A

25

BT151

IT(RMS) / A

20

dI T /dt limit

15

100

10
I TSM

IT

time

Tj initial = 25 C max
10
10us

100us

0
0.01

10ms

1ms

0.1
1
surge duration / s

T/s

Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 10ms.

15

IT(RMS) / A

10

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 109C.

BT151

1.6
109 C

VGT(Tj)
VGT(25 C)

BT151

1.4

10

1.2
1

0.8
0.6

0
-50

50
Tmb / C

100

0.4
-50

150

Fig.3. Maximum permissible rms current IT(RMS) ,

versus mounting base temperature Tmb.

September 1997

50
Tj / C

100

150

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25C), versus junction temperature Tj.

Rev 1.200

Philips Semiconductors

Product specification

Thyristors
sensitive gate

IGT(Tj)
IGT(25 C)

BTA151 series

30

BT151

Tj = 125 C
Tj = 25 C
25

2.5

Vo = 1.06 V
Rs = 0.0304 ohms

typ

20

2
1.5

15

10

0.5

0
-50

50
Tj / C

100

150

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25C), versus junction temperature Tj.

BT151

IT / A

IL(Tj)
IL(25 C)

0.5

max

1
VT / V

1.5

Fig.10. Typical and maximum on-state characteristic.

10

BT145

2.5

BT151

Zth j-mb (K/W)

2
0.1

1.5

P
D

tp

0.01

0.5

0
-50

50
Tj / C

100

0.001
10us

150

IH(Tj)
IH(25 C)

1ms

10ms
tp / s

0.1s

1s

10s

Fig.11. Transient thermal impedance Zth j-mb, versus

pulse width tp.

Fig.8. Normalised latching current IL(Tj)/ IL(25C),

versus junction temperature Tj.

0.1ms

10000

BT151

dVD/dt (V/us)

2.5
1000

2
RGK = 100 Ohms

1.5
100

gate open circuit

0.5
0
-50

50
Tj / C

100

10

150

50

100

150

Tj / C

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25C),

versus junction temperature Tj.

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors
sensitive gate

BTA151 series

MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g

2.8
2.3

mounting
base

7.8
max

3.75
3.1
2.5

1)
2.54
max

11.1
max

1.2
15.3
min

0.5

4.58

2.29
0.88
max

1) Lead dimensions within this

zone uncontrolled.

Fig.13. SOT82; pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.200

Philips Semiconductors

Product specification

Thyristors
sensitive gate

BTA151 series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997

Rev 1.200