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Student:
Ionut-Adrian Hurmuz
Coordinator:
Martijn Heck
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Table of Contents
1. Introduction........................................................................................3
2. AWG Basic Design...............................................................................3
3. Components and Working Principle....................................................5
4. Important Properties and Parameters.................................................6
5. Applications AWG Wavelength Demultiplexers................................7
5.1 Fabrication Platforms Silica-on-Silicon...........................................7
5.2 Fabrication Platforms Indium Phosphide (InP)...............................8
5.3 Fabrication Platforms: Silicon...........................................................8
5.3 Application.......................................................................................9
5.4 Basic design and BPM simulation of an InP AWG demultiplexer....10
6. Conclusion........................................................................................13
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spectrometer. The concave alignment of the waveguide ends acts as a
lens and the AWG acts as a diffraction grating. Accordingly, lights with
different wavelengths are focused at corresponding ports when a
wavelength multiplexed light is launched into the input port.
Where:
The wavelength of the light that travels in this direction is called the
center wavelength. As the wavelength changes from the center
wavelength, the focal point moves at a speed of dx/d, which is called the
linear dispersion of the grating where x is a coordinate along the focal line
(Figure 1.1.). The linear dispersion is obtained as follows:
(2)
where
(3)
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and f is the focal length of the waveguide. In order to obtain a high
wavelength resolution, a large linear dispersion is needed. This is realized
with a long focal length f and a small pitch d.
In an AWG, an extremely large linear dispersion can be obtained, with a
high diffraction order m simply by designing the waveguide length. This is
the most important characteristic feature of the AWG and a wavelength
channel spacing of less than 1 nm is easily obtained in AWG
multi/demultiplexers.
This channel-spacing structure is called the free spectral range (FSR).
Therefore, the wavelength range available for WDM is limited to the FSR.
The FSR in terms of frequency is given by the formula below where c is the
light velocity in a vacuum.
(4)
It can also be seen that a large focal length f is required for a higher
channel count. Accordingly, a large number of arrayed waveguides is
required to receive all the diffracted light from the input waveguide.
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the path length difference between the arrayed waveguides results in a
relative phase delay in each waveguide, which changes with wavelength.
This results in a rotation of the field phase front in the second slab and a
translation of the location of the focal point as a function of the
wavelength.
A key for designing AWG components is given by Expression (2) which
relates the star coupler size, array waveguide spacing, and L.
Many important device physical features, such as the access and arrayed
waveguide widths and their minimum separation, will be dictated by the
maximum resolution of the device fabrication process. The arrayed
waveguide spacing, da, should be as low as possible, since any light not
coupled into the array will contribute to the device insertion losses. The
output waveguide spacing, dr , will directly impact the crosstalk of the
AWG, since the output image at a given spatial location will have
exponential tails that can couple into the adjacent output waveguides,
depending on the distance. The lower bound of this parameter can be
determined, based on the desired crosstalk and receiver waveguide
architecture, using a normalized crosstalk plot like the one in Figure 1.2
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5.1 Fabrication Platforms Silica-on-Silicon
Silica-on-silicon is the most promising set of materials for integrated
optics. It has the advantages of having a cheap fabrication process and a
good compatibility with Si-based microelectronics. The connection with
single mode optical fibers is also cheap and can be done with low losses.
It is good performing technology for passive devices like the ones based
on AWGs, but the research progress leads to active components such as
optical amplifiers. The only major disadvantage is the current lack of an
operating mechanism for high-speed switches (for example, an electrooptic effect).
As mentioned below, the passive components that can be fabricated using
this technology are currently leading the market. AWG Demultiplexers with
crosstalk figures that reach less than 30 dB are available for commercial
use and also with up to 80 channels and down to 25 GHz channel spacing.
Insertion losses are typically as low as 5 dB.
5.2 Fabrication Platforms Indium Phosphide (InP)
Lasers, photodiodes and waveguides fabricated on InP operate at the
optimum transmission window of glass fiber, which enable efficient fiber
communications. The direct band-gap structure makes it a good solution
for electro-optical devices. It has an extremely low noise figure and can
reach frequencies in the terahertz domain. The disadvantages are
represented by its fragility, low breakdown voltage and high costs - more
expensive than GaAs due to starting material costs and smaller wafer size
are used.
Silica-on-silicon technology is closer to maturity than Indium-Phosphide
(InP)-based semiconductor technology, but its applications are restricted
to passive and low-speed dynamic functions based on thermo-optic phase
shifters.
InP is better suited to more complex functions involving light generation,
amplification, detection and a range of non-linear signal operations. InP
can integrate all these functions on a single chip. Further, InP-based
devices are smaller by one or two orders than silica-based devices which
makes them very suitable for applications in complex integrated circuits.
Their performance is lagging behind silica-on-silicon devices, but it is
steadily improving. Due to their small waveguide core, coupling to fibers is
more difficult, and hence more costly. This makes them less competitive
for circuits with a restricted functionality. For more complex circuits, InP
will evolve and become a dominant material.
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5.3 Fabrication Platforms: Silicon
The use of silicon has long been established for infrared optics, such as
simple lenses and windows and long-wave detection. There is no doubt
about the economic and technical advantages of silicon and it was
inevitable that silicon would be employed wherever optic fiber is
deployed. In terms of optical spectrum advantages, Silicon has a wide
transparent window that extends to infrared. It also has a high heat
conductance and the benefit of low noise, which makes it suitable for high
speed integrated circuits.
Basic components with high performance have already been
demonstrated using silicon wire waveguides. A good example of a
standard commercial circuit is the AWG. Because of material purity and
precise geometric control, the silicon AWG has very low crosstalk and
excellent ITU grid registration as shown in figure 5.1. The absolute
insertion loss from glass fiber to a Si AWG is a little higher compared to a
silica AWG. However, when multiple functions are integrated
monolithically and fiber interconnects are not utilized, the Si AWG has an
insertion loss advantage.
Some properties of the silicon waveguides are quite different from the
more familiar silica (SiO2) waveguide. In Silicon, the minimum turning
radius is 250 m compared to 5,000 um in Silica; the Si refractive index is
3.4 compared to Silicas 1.6;
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5.3 Application
A multiwavelength receiver is obtained by integration of an InP AWG
Demultiplexer with a photodiode array like it is presented in Figure 5.2.
Figure 5.1 1x8 WDM receiver consisting of an AWG integrated with 8 detector diodes
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phasar array. The thickness of the top and bottom layer is not important to
the calculation, as they are assumed to extend to infinity.
In the following step after designing the multilayer structure, the software
calculates the values of the effective indexes for both core and cladding.
This results are: 3.366345 for the core and 3.184621 for the cladding.
At this point waveguide design is complete and the simulation parameters
are required. A propagation length of 15000 m is selected over a mesh of
10000 m in width. By imposing a maximum crosstalk level specification
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Figure 5.6 displays the result of BPM. The top left quadrant displays a
topographical view of the optical field and the top right quadrant shows a
3D representation of the same oprical field. The bottom left quadrant
displays a cross-sectional view of the effective index distribution (in red)
and the field distribution (in blue) while the bottom right quadrant displays
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6.
Conclusion
Arrayed waveguide gratings represent one of the most important building
blocks of complex photonic integrated circuits. They can be considered as
stand-alone passive components, but their utility as building blocks to
realize optical, chip-scale multiplexers/demultiplexers, cross-connectors
and router functions, as well as different digitally tunable diode laser
cavities make them a top research subject.
The highest complexities in optical integration so far have been reported
in AWG-based PICs. From the three fabrication methods presented the one
based on Indium Phosphide has an important growing potential and a
more complex spectrum of functions in terms of active components
design. It will lead to a dramatic reduction of the entry costs for
companies that are interested in applying this method to integrate
components. The big challenge that needs to be overcome is represented
by the scaling possibilities and in the future, it is expected to be very
competitive at small and medium production levels.
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Due to the nature of the production infrastructure the start-up costs are
lower compared to advanced silicon photonics processes, while offering
significantly more functionality. In the long term it is expected that InPPhotonics and CMOS electronics will merge in a heterogeneous integration
technology, where CMOS will provide the electronic functionality and InP
the photonic functionality.
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References
1. Photonic Integrated Circuits course materials, Aarhus University
1. Encyclopedic handbook of integrated optics / Kenuchi Iga and Yasuo
Kokaqbun, 2006
2. Diode lasers and photonic integrated circuits / Larry A. Coldren,
Scott Corzine, Milan Mashanovitch. 2nd ed.
3. Wavelength Filters in Fiber Optics, Herbert Venghaus, 2006
4. PHASAR-Based WDM-Devices: Principles, Design and Applications,
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,
VOL. 2, NO. 2, JUNE 1996
5. Arrayed Waveguide Grating, Dr. Martin Amersfoort, 1998
6. Introduction to fiber optics, Ajoy Ghatak, K. Thyagarajan, Cambridge
University Press
7. Arrayed Waveguide Gratings - Research Centre for Microtechnology,
Application note
8. Online resources
Wikipedia,
components
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demonstrations
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