Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
60N03

Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

60 AMPERES
30 VOLTS
RDS(on) = 6.0 m
(Typ.)

Typical Applications

Power Supplies
Converters
Power Motor Controls
Bridge Circuits

N-Channel
D

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Symbol

Value

Unit

Drain-to-Source Voltage

Rating

VDSS

30

Vdc

Gate-to-Source Voltage - Continuous

VGS

20

Vdc

ID

60*
120

Adc

Drain Current - Continuous @ TA = 25C

Drain Current - Single Pulse (tp = 10 s)
Total Power Dissipation @ TA = 25C
Operating and Storage
Temperature Range
Single Pulse Drain-to-Source Avalanche
Energy - Starting TJ = 25C
(VDD = 28 Vdc, VGS = 10 Vdc,
IL = 17 Apk, L = 5.0 mH, RG = 25
)
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds

IDM
PD

75

Watts

TJ, Tstg

- 55 to
150

EAS

733

mJ

RJC
RJA
RJA

1.65
67
120

TL

260

G
4

4
1 2
3

12

C/W

MARKING DIAGRAMS
& PIN ASSIGNMENTS
C

4
Drain

1. When surface mounted to an FR4 board using 1 pad size,

(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.

60N03R
TFXXX

60N03R
TFXXX
1
Gate

2
Drain

60N03R
TF
XXX

4
Drain

3
Source

1
Gate

= Device code
= TuoFeng
= Year

2
Drain

3
Source

60N03
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic

Symbol

Min

V(BR)DSS

30

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 24 Vdc)

IDSS

Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)

IGSS

VGS(th)

Typ

Max

Unit

Vdc

50

nAdc

100

nAdc

1.3
-

1.9
-3.8

2.2
-

OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)

ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
Static Drain-to-Source On-Resistance (Note 3)
(VGS = 10 Vdc, ID = 40 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)

6.0
10.0

RDS(on)

Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3)

Vdc
mV/C
m

gFS

20

Mhos

Ciss

2150

pF

Coss

680

Crss

260

td(on)

10

tr

18

td(off)

32

tf

15

QT

30

Q1

6.5

Q2

18.4

0.75
1.2
0.65

1.0
-

trr

39

ta

21

tb

18

Qrr

0.043

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance

(VDS = 24 Vdc,
Vd VGS = 0 Vdc,
Vd
f=1
1.0
0 MHz)

Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time

(VDD = 15 Vdc, ID = 15 Adc,

VGS = 10 Vdc,
Vdc
RG = 3.3
)

Fall Time
Gate
Ga
eC
Charge
a ge
(VDS = 24 Vdc,
Vd ID = 15 Adc,
Ad
VGS = 4.5
4 5 Vdc) (Note 3)

ns

nC

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage
(IS = 2.3 Adc, VGS = 0 Vdc) (Note 3)
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 150C)

VSD

Reverse
e e se Recovery
eco e y Time
e
(IS = 2.3
2 3 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.

Vdc

nss

C

60N03

3.8 V

40

10 V
8V
6V

30

5V
4.5 V
4V

60

TJ = 25C

VDS 10 V
ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

50

3.6 V

3.4 V

20
3.2 V
10

3V
VGS = 2.8 V

TJ = 25C

30
20

TJ = 125C
10
TJ = -55C

0.5

1.5

2.5

3.5

4.5

VGS, GATE-T O-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

0.07
ID = 10 A
TJ = 25C

0.06
0.05
0.04
0.03
0.02
0.01
0
0

10

0.015
TJ = 25C

0.01

VGS = 4.5 V

VGS = 10 V
0.005

0
5

10

15

20

25

30

VGS, GATE-T O-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 3. On-Resistance versus

Gate-T o-Source Voltage

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

1.8

1000
VGS = 0 V

ID = 30 A
VDS = 10 V

TJ = 125C
IDSS, LEAKAGE (nA)

1.6

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

RDS(on), DRAIN-TO-SOURCE RESISTANCE (
)

RDS(on), DRAIN-TO-SOURCE RESISTANCE (
)

40

RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)

50

1.4
1.2
1.0

100
TJ = 100C

10

0.8
0.6
-50

1
-25

25

50

75

100

125

150

12

16

TJ, JUNCTION TEMPERATURE (C)

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5. On-Resistance Variation with

Temperature

Figure 6. Drain-To-Source Leakage

Current versus Voltage

20

60N03

C, CAPACITANCE (pF)

VGS, GATE-T O-SOURCE VOLTAGE (V)

5000
Ciss

4500

TJ = 25C

4000
3500
3000 Crss
2500

Ciss

2000
1500
1000

Coss

500

Crss

VDS = 0 V VGS = 0 V

0
15

10

VGS

VDS

10

15

20

25

6
QT
VGS

2
ID = 15 A
TJ = 25C
0

16

24

32

Qg, TOTAL GATE CHARGE (nC)

GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

Figure 8. Gate-to-Source and

Drain-to-Source Voltage versus Total Charge

1000

5
IS, SOURCE CURRENT (AMPS)

VDD = 24 V
ID = 20 A
VGS = 10 V
t, TIME (ns)

Q2

Q1

100
tf
td(off)
tr
td(on)

10

VGS = 0 V
TJ = 25C

1
0

1
1

10

0.1

100

0.3

0.5

0.7

0.9

RG, GATE RESISTANCE (
)

VSD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage versus

Current

60N03

ID , DRAIN CURRENT (AMPS)

100
100 s
di/dt
1 ms

VGS = 10 V
SINGLE PULSE
TC = 25C

10

ta

tb
TIME

dc

0.25 IS

tp
IS

0.1

trr

10 ms

RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1

IS

10

100

VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 12. Diode Reverse Recovery Waveform

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Rthja(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE

1000

MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT

DUTY CYCLE
100

D = 0.5
0.2
0.1
0.05
0.02
0.01

10

P(pk)
t1

0.1

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE

RJA(t) = r(t) RJA

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RJA(t)

0.01
1E05

1E04

1E03

1E02

1E01
t, TIME (seconds)

1E+00

Figure 13. Thermal Response - Various Duty Cycles

1E+01

1E+02

1E+03

60N03
PACKAGE DIMENSIONS

DPAK, STRAIGHT LEAD

CASE 369-07
ISSUE M

B
V

R
4

A
1

S
-TSEATING
PLANE

H
D
G

3 PL

0.13 (0.005)

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V

INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.090 BSC
0.034
0.040
0.018
0.023
0.350
0.380
0.175
0.215
0.050
0.090
0.030
0.050

STYLE 2:
PIN 1.
2.
3.
4.

GATE
DRAIN
SOURCE
DRAIN

MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.46
1.27
2.28
0.77
1.27

60N03R
PACKAGE DIMENSIONS

DPAK
CASE 369A-13
ISSUE AB

B
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

SEATING
PLANE

-T-

R
4

A
S

K
F

J
L

H
D

2 PL

0.13 (0.005)

DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z

INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020

0.030
0.050
0.138

STYLE 2:
PIN 1.
2.
3.
4.

GATE
DRAIN
SOURCE
DRAIN

MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51

0.77
1.27
3.51