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MCQsinSemiconductorDiodes|PinoyBIX
ThisistheMultipleChoiceQuestionsinSemiconductorDiodesfromthe
bookElectronicDevicesandCircuitTheory10thEditionbyRobertL.
Boylestad.IfyouarelookingforareviewerinElectronicsEngineering
thiswilldefinitelyhelp.Icanassureyouthatthiswillbeagreathelpin
reviewingthebookinpreparationforyourBoardExam.Makesureto
familiarizeeachandeveryquestionstoincreasethechanceofpassing
theECEBoardExam.
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2.Whatistheresistorvalueofanidealdiodeintheregionof
conduction?
A)0
B)5k
C)Undefined
D)Infinity
3.Whatisthestateofanidealdiodeintheregionofnonconduction?
A)Anopencircuit
B)Ashortcircuit
C)Unpredictable
D)Undefined
4.Thediode_____.
A)isthesimplestofsemiconductordevices
B)hascharacteristicsthatcloselymatchthoseofasimple
switch
C)isatwoterminaldevice
D)Alloftheabove
5.Theidealdiodeisa(n)_____circuitintheregionofnonconduction.
A)open
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B)short
6.Whichofthefollowingisanatomcomposedof?
A)Electrons
B)Protons
C)Neutrons
D)Alloftheabove
7.Howmanyorbitingelectronsdoesthegermaniumatomhave?
A)4
B)14
C)32
D)41
8.Howmanyvalenceelectronsdoesasiliconatomhave?
A)1
B)2
C)3
D)4
9.OneeVisequalto_____J.
A)6.021023
B)1.61019
C)6.251018
D)1.661024
10.Whichofthefollowingelementsismostfrequentlyusedfordoping
pureGeorSi?
A)Boron
B)Gallium
C)Indium
D)Alloftheabove
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11.Thediffusedimpuritieswith_____valenceelectronsarecalled
donoratoms.
A)4
B)3
C)5
D)0
12.Inwhatstateisasilicondiodeifthevoltagedropacrossitisabout
0.7V?
A)Nobias
B)Forwardbias
C)Reversebias
D)Zenerregion
13.Whatunitisusedtorepresentthelevelofadiodeforwardcurrent
IF?
A)pA
B)nA
C)A
D)mA
14.Whichofthefollowingratingsistrue?
A)SidiodeshavehigherPIVandnarrowertemperature
rangesthanGediodes.
B)SidiodeshavehigherPIVandwidertemperatureranges
thanGediodes.
C)SidiodeshavelowerPIVandnarrowertemperature
rangesthanGediodes.
D)SidiodeshavelowerPIVandwidertemperatureranges
thanGediodes.
15.ItisnotuncommonforagermaniumdiodewithanIsintheorder
of12Aat25Ctohaveleakagecurrentof0.1mAatatemperature
of100C.
A)True
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B)False
16.CalculatestaticresistanceRDofadiodehavingID=30mAandVD
=0.75V.
A)25
B)40
C)0.04
D)0.025
17.CalculateIDifRD=30andVD=0.84V.
A)28mA
B)0.028mA
C)2.8A
D)280A
18.RefertoFigure1.27.Calculatethedynamicresistancerdofadiode
havingID=27.5mA.
A)0
B)2
C)5
D)26
19.Determiningrdtoahighdegreeofaccuracyfromacharacteristic
curveisveryaccurate.
A)True
B)False
20.The_____diodemodelisemployedmostfrequentlyinthe
analysisofelectronicsystems.
A)idealdevice
B)simplified
C)piecewiselinear
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21.CalculatethepowerdissipationofadiodehavingID=40mA.
A)28mW
B)28W
C)280mW
D)Undefined
22.Whichcapacitancedominatesinthereversebiasregion?
A)depletion
B)conversion
C)40Diffusion
D)140Noneoftheabove
23.Whichcapacitancedominatesintheforwardbiasregion?
A)Diffusion
B)Transition
C)Depletion
D)Noneoftheabove
24.Atwhatkindofoperatingfrequencydiffusionortransitionisa
capacitorrepresentedinparallelwiththeidealdiode?
A)Lowfrequency
B)Moderatefrequency
C)Midfrequency
D)Veryhighfrequency
25.Whatisthevalueofthetransitioncapacitanceforasilicondiode
whenVD=0?
A)1pF
B)3pF
C)5pF
D)10pF
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26.Whichofthefollowingdevicescanchecktheconditionofa
semiconductordiode?
A)Digitaldisplaymeter(DDM)
B)Multimeter
C)Curvetracer
D)Alloftheabove
27.Whatdoesahighresistancereadinginbothforwardandreverse
biasdirectionsindicate?
A)Agooddiode
B)Anopendiode
C)Ashorteddiode
D)Adefectiveohmmeter
28.Theconditionofasemiconductordiodecanbedeterminedquickly
usinga_____.
A)DDM
B)VOM
C)curvetracer
D)Anyoftheabove
29.DeterminethenominalvoltagefortheZenerdiodeata
temperatureof120Cifthenominalvoltageis5.1voltsat25Cand
thetemperaturecoefficientis0.05%/C.
A)4.6V
B)4.86V
C)5.1V
D)5.34V
30.Calculatethetemperaturecoefficientin%/Cofa10Vnominal
Zenerdiodeat25Cifthenominalvoltageis10.2Vat100C.
A)0.0238
B)0.0251
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C)0.0267
D)0.0321
31.Inwhichofthefollowingcolor(s)is(are)LEDspresentlyavailable?
A)Yellow
B)White
C)Orange
D)Alloftheabove
32.WhatisthemaximumpowerratingforLEDs?
A)150mW
B)500mW
C)1W
D)10W
33.Inwhichofthefollowingisthelightintensitymeasured?
A)Candela
B)Efficacy
C)Flux
D)Illumination
34.WhatistherangeoftheoperatingvoltagelevelforLEDs?
A)512mV
B)1.73.3V
C)512V
D)2025V
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35.Ingeneral,LEDsoperateatvoltagelevelsfrom_____Vto_____
V.
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B)1.7,3.3
C)0.5,4.0
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D)Noneoftheabove
2.Theterm_____isoftenusedwhencomparingtheresistancelevel
ofmaterials.
A)permittivity
B)inductivity
C)conductivity
D)resistivity
3.Intheatomiclatticethe_____and_____formthenucleus.
A)electrons,neutrons
B)electrons,protons
C)neutrons,protons
D)Noneoftheabove
4.Anincreaseintemperatureofasemiconductorcanresultina_____
inthenumberoffreeelectronsinthematerial.
A)substantialincrease
B)substantialdecrease
C)slightdecrease
D)nochange
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5.GeandSihavea(n)_____coefficientinforwardbias.
A)positivetemperature
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B)negativetemperature
C)absolutetemperature
D)temperaturefree
6.Anyelectronthathasleftitsparentatomhas_____energystate
relativetoanyelectronintheatomicstructure.
A)thesame
B)alower
C)ahigher
D)anundefined
7.Introducingthoseimpurityelementsthathave_____valence
electronscreatesthentypematerial.
A)0
B)3
C)4
D)5
8.Inntypematerialthe_____iscalledthemajoritycarrier.
A)electron
B)hole
C)proton
D)neutron
9.Thediffusedimpuritieswith_____valenceelectronsarecalled
acceptoratoms.
A)0
B)3
C)4
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D)5
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10.Thereversesaturationcurrentlevelistypicallymeasuredin_____.
A)pA
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B)A
C)mA
D)A
11.Thedepletionwidth_____intheforwardbias,whichresultsin
havingamajorityflowacrossthejunction.
A)widens
B)remainsunchanged
C)shrinks
D)widensandshrinksalternatively
12.Theforwardcharacteristicscurveofadiodegrowsin_____form.
A)linear
B)exponential
C)logarithmic
D)sinusoidal
13.Thepotentialatwhichthecharacteristicscurveverticalriseoccurs
iscommonlyreferredtoasthe_____.
A)offset
B)threshold
C)firingpotential
D)Alloftheabove
14.ThereversesaturationcurrentIswilljust_____inmagnitudefor
every10Cincreaseintemperature.
A)double
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B)remainthesame
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D)triple
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15.Diodesareconnected_____toincreasethecurrentcarrying
capacity.
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A)inseries
B)inparallel
C)inparallelseries
D)Noneoftheabove
16.The_____thecurrentthroughadiode,the_____thedc
resistancelevel.
A)higher,lower
B)lower,lower
C)lower,higher
D)higher,higher
17.Varyingthe_____cancontrolthelocationoftheZenerregion.
A)forwardcurrent
B)dopinglevels
C)forwardvoltage
D)dcresistance
18.ThetestcurrentinaZenerdiodeIZTisthecurrentdefinedbythe
_____powerlevel.
A)0.25
B)0.5
C)0.75
D)1.00
19.TheheavierthecurrentinaZenerdiodeinreversebias,_____
dynamicresistancevalue.
A)themorethe
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D)thereisnochangeinthe
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20.TheintensityofLEDisgreatestat_____degreesandtheleastat
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_____degrees.
A)0,90
B)45,90
C)0,45
D)90,180
21.Thetemperaturecoefficientcanbe_____fordifferentZenerlevels.
A)positive
B)negative
C)zero
D)Alloftheabove
22.Thereverserecoverytimeofmostcommercialswitchingdiodesis
intherangeof_____.
A)picoseconds
B)afewnanoseconds
C)severalmicroseconds
D)milliseconds
23.Theacresistanceofadiodeisthe_____ofthecharacteristiccurve
attheQpointofoperation.
A)reciprocaloftheslope
B)slope
C)midpoint
D)averagevalue
24.Generallythevalueofacresistanceis_____thevalueofdc
resistanceatthesameoperatingpoint.
A)smallerthan
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C)thesameas
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25.Thereversebiascurrent_____withtheincreaseoftemperature.
A)decreases
B)increases
C)remainsthesame
D)Noneoftheabove
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