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Chad Rue
FEI Company, Hillsboro, OR, USA
Randall Shepherd, Roy Hallstein, and Rick Livengood
Intel Corporation, Santa Clara, CA, USA
Introduction
Focused Ion Beam (FIB) tools are ubiquitous in the
semiconductor industry, and are used to perform a wide range
of Failure Analysis (FA) activities, from fault isolation to TEM
sample prep. FIB tools are also used to perform Circuit Edit,
(CE), in which existing Integrated Circuit (IC) devices are
modified to create prototype devices that simulate potential
mask changes. This greatly reduces the time and expense
associated with the design validation and debug process, and
speeds the product time-to-market.
However, the complexity of modern Integrated Circuits (ICs)
presents serious challenges to FIB operators. IC features are
becoming smaller and more densely packed, and new material
sets are construction techniques are continually emerging. To
address the navigational challenges of circuit edit, FIB
manufacturers have rightly invested significant effort to
improve the XY accuracy of FIB systems. Laser
interferometer-based stages are sometimes employed to
achieve the XY accuracy that is required to edit modern IC
devices.
However, great care must also be exercised to control FIB
processing in Z space. Modern IC devices have extremely thin
layers that require exquisite depth control. This requires
precise beam placement rastering strategies. In addition,
chemical agents can be introduced onto the sample during FIB
processing, to favorably manipulate the milling rates of
selected materials. The use of chemical agents to enhance or
suppress FIB milling rates is generally referred to as GasAssisted Etching (GAE). [1]
Previous work at FEI has demonstrated that the acceleration
potential of the ion beam can have a significant impact on the
selectivity of GAE processes. [2, 3] In particular, lower ion
energies tend to enhance chemical selectivity. [4] This is
presumably because lower energy ions generate lower sputter
yields, yet still provide ample energy to the surface to activate
adsorbed surface precursors. Previously published work
demonstrated that SiO2 can be selectively removed in the
presence of copper using a XeF2-assisted etch at low ion
energies, in a process referred to as skeletal etch. [3]
Figure 2: Cross sectional view following a 12 keV waterassisted FIB mill on a thick copper film. This process is highly
selective to the copper, and results in minimal erosion of the
underlying dielectric material. The copper film shown in this
image is about 5 m thick. A thin tungsten deposition was
performed prior to cross sectioning, to help visualize the
underlying oxide.
Although ion milling at low keV is common in TEM sample
preparation, the technique has not become commonplace for
CE applications, despite the importance of ion energy on
chemical selectivity. This is because most commercial FIB
systems are optimized for either 30 or 50 keV, and image
resolution begins to degrade as the ion energy is reduced.
Recent work in the laboratories of FEI and Intel have
attempted to apply low keV FIB processing to cutting small
copper lines on advanced IC devices. The majority of this
paper will deal with water-assisted, low keV copper etching.
Secondary objectives of this work are to raise general
awareness among FIB users of the potential benefits of low
keV processing, to speculate on the physical mechanisms
involved, and to discuss some of the technical difficulties
associated with low keV FIB operation
0.4
0.3
Default Mill
Water-Assisted
0.2
0.1
0
0
10
20
30
Figure 5: Via milling rates as a function of ion energy. The yaxis is presented as the via depth in micrometers per ion dose
(where dose is a measure of the total ion charge delivered to
the surface in units of nC/mm2). Note that the water-assisted
curve is significantly lower than the default mill curve. That is,
water suppresses the FIB milling rate of oxide.
Figure 13: Similar to the cuts shown in Figure 12, except that
the cross sectional face is perpendicular to the target line.
That is, the target line extends in-and-out of the image plane.
100
XeF2
10
No Gas
1
0.1
Water
0.01
pressures and low ion energies are shown in Figures 16a and b,
respectively.
Figure 16a: Image grabs at 8 keV with gas off (left) and with
water flowing at a pressure of 2x10-5 Torr (right).
Acknowledgements
The authors wish to thank Clive Chandler of FEI Company for
helpful discussions on the mechanism of dielectric etch
suppression. Mark Utlaut, Mostafa Maazouz, and John Orloff
provided helpful discussions on charged particle optics. SRIM
version 2006.02 was used for the gas scattering calculations in
this work.
Conclusions
We have demonstrated that the selectivity of water-assisted
FIB copper etching depends strongly on the ion acceleration