IRFR220, IRFU220

Data Sheet

4.6A, 200V, 0.800 Ohm, N-Channel Power

MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA9600.

Ordering Information
PART NUMBER

July 1999

File Number

2410.2

Features
4.6A, 200V
rDS(ON) = 0.800
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol

PACKAGE

BRAND

IRFR220

TO-252AA

IFR220

IRFU220

TO-251AA

IFU220

NOTE: When ordering, use the entire part number.

S

Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE

JEDEC TO-252AA

GATE

DRAIN

DRAIN
(FLANGE)

SOURCE

DRAIN (FLANGE)

4-389

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRFR220, IRFU220
Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specfied

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRFR220, IRFU220
200
200
4.6
2.9
18
20
50
0.4
85
-55 to 150

UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

PARAMETER

BVDSS

ID = 250A, VGS = 0V, (Figure 10)

200

Gate Threshold Voltage

VGS(TH)

VGS = VDS , ID = 250A

Zero Gate Voltage Drain Current

On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time

SYMBOL

IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

TEST CONDITIONS

2.0

4.0

VDS = Rated BVDSS , VGS = 0V

25

VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC

250

4.6

VDS > ID(ON) x rDS(ON)MAX , VGS = 10V,

(Figure 7)
VGS = 20V

100

nA

ID = 2.4A, VGS = 10V, (Figures 8, 9)

0.47

0.800

1.7

2.6

VDD = 100V, ID 4.6A, RGS = 18, RL = 18,

VGS = 10V
MOSFET Switching Times are Essentially Independent of Operating Temperature

8.8

13

ns

27

41

ns

21

32

ns

14

21

ns

VGS = 10V, ID = 4.6A, VDS = 0.8 x Rated BVDSS ,

Ig(REF) = 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of Operating Temperature

12

18

nC

2.3

3.4

nC

4.5

6.8

nC

VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)

330

pF

120

pF

VDS 50V, ID = 2.4A, (Figure 12)

tf

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

Gate to Source Charge

Qgs

Gate to Drain Miller Charge

Qgd

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Internal Drain Inductance

LD

Measured From the Drain

Lead, 6.0mm (0.25in)
From Package to Center of
Die

Internal Source Inductance

LS

Measured From the

Source Lead, 6.0mm
(0.25in) From Package to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D

41

pF

4.5

nH

7.5

nH

2.5

oC/W

110

oC/W

LD
G
LS
S

Thermal Resistance, Junction to Case

RJC

Thermal Resistance, Junction to Ambient

RJA

4-390

Typical Solder Mount

IRFR220, IRFU220
Source to Drain Diode Specifications
PARAMETER

SYMBOL

Continuous Source to Drain Current

ISD

Pulse Source to Drain Current (Note 3)

ISDM

TEST CONDITIONS
Modified MOSFET Symbol Showing the Integral
Reverse P-N Junction
Rectifier

MIN

TYP

MAX

UNITS

4.6

18

1.8

69

170

400

ns

0.30

0.72

1.8

Source to Drain Diode Voltage (Note 2)

VSD

Reverse Recovery Time

trr

Reverse Recovery Charge

QRR

TJ = 25oC, ISD = 4.6A, VGS = 0V, (Figure 13)

TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/s
TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/s

NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50, peak IAS = 4.6A.

Typical Performance Curves

Unless Otherwise Specified

ID , DRAIN CURRENT (A)

1.0

0.8
0.6
0.4
0.2
0

0
0

50

100

150

TC , CASE TEMPERATURE (oC)

25

50

75

100

125

150

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

10

ZJC , TRANSIENT
THERMAL IMPEDANCE

POWER DISSIPATION MULTIPLIER

1.2

0.5
1
0.2

PDM

0.1
0.05
0.1

t1

0.02
0.01

t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC

SINGLE PULSE
10-2
10-5

10-4

0.1
10-3
10-2
t1, RECTANGULAR PULSE DURATION (S)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-391

10

IRFR220, IRFU220
Typical Performance Curves

Unless Otherwise Specified

(Continued)

100

10
VGS = 10V
VGS = 8V
ID , DRAIN CURRENT (A)

ID , DRAIN CURRENT (A)

OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
10s

10

100s

1ms
1

0.1

10ms

8
VGS = 7V
6

VGS = 6V

2
VGS = 5V

DC

TJ = MAX RATED
TC = 25oC
SINGLE PULSE
1

VGS = 4V

0
0

10
100
VDS , DRAIN TO SOURCE VOLTAGE (V)

20

ID , DRAIN CURRENT (A)

ID , DRAIN CURRENT (A)

VGS = 8V
6
VGS = 7V
4
VGS = 6V

VGS = 4V

1
TJ = 150oC

TJ = 25oC

0.1

VGS = 5V

10-2
0

VDS , DRAIN TO SOURCE VOLTAGE (V)

10

FIGURE 7. TRANSFER CHARACTERISTICS

3.0

5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
4
VGS = 10V
3

VGS , GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

rDS(ON) , DRAIN TO SOURCE

ON RESISTANCE (S)

100

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS = 50V

VGS = 10V

80

10

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

60

FIGURE 5. OUTPUT CHARACTERISTICS

10

40

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

VGS = 20V

2.4

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 2.4A

1.8

1.2

0.6

0
0

10

15

20

ID , DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-392

25

-40

40

80

120

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

160

IRFR220, IRFU220
Typical Performance Curves

Unless Otherwise Specified

(Continued)

1000
ID = 250A

1.15

VGS = 0V, f = 1MHz

CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD

800
C, CAPACITANCE (pF)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

1.25

1.05

0.95

600
CISS
400
COSS

0.85

200
CRSS

0.75
-40

80

40

120

160

10
VDS , DRAIN TO SOURCE VOLTAGE (V)

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

ISD , SOURCE TO DRAIN CURRENT (A)

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS = 50V
TJ = 25oC

TJ = 150oC

102
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX

10

TJ = 25oC

TJ = 150oC
1

0.1

0
0

10

0.3

ID , DRAIN CURRENT (A)

0.6

ID = 4.6A
VDS = 160V
VDS = 100V
VDS = 40V

16

12

0
2

10

Qg(TOT) , TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-393

1.2

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

0.9

VSD , SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

VGS , GATE TO SOURCE (V)

gfs , TRANSCONDUCTANCE (S)

102

1.5

IRFR220, IRFU220
Test Circuits and Waveforms
VDS
BVDSS
L

tP

VARY tP TO OBTAIN

RG

REQUIRED PEAK IAS

VDS

IAS

VDD

VDD
-

VGS
DUT
tP

0V

IAS

0
0.01
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON

tOFF

td(ON)

td(OFF)
tf

tr
RL

VDS

90%

90%

RG

VDD

10%

10%

DUT

90%
VGS

VGS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

0.2F

50%
PULSE WIDTH

10%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
(ISOLATED
SUPPLY)

CURRENT
REGULATOR

12V
BATTERY

50%

VDD
Qg(TOT)

SAME TYPE
AS DUT

50k

Qgd

0.3F

VGS

Qgs
D
VDS
DUT

0
IG(REF)

0
IG CURRENT
SAMPLING
RESISTOR

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

4-394

IG(REF)
0

FIGURE 20. GATE CHARGE WAVEFORMS

IRFR220, IRFU220

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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4-395

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