PJ13007

NPN Epitaxial Silicon Transistor

HIGH VOLTAGE SWITCH MODE APPLICATION
High Speed Switching
Suitable for Swiching Regulator and Motor Control

TO-220

ABSOLUTE MAXIMUM RATINGS (Ta= 25 )

Characteristic

Symbol

Rating

Uint

Collector Base Voltage

Collector Emitter

VCBO
VCEO

700
400

V
V

VEBO

Collector Current (DC)

Ic

Collector Current

Ic

16

Base Current

IB

Collector Dissipation

Pc

80

Junction Temperature

Tj

150

Storage Temperature

Tstg

Voltage
Emitter Base Voltage

P in : 1. Base
2. Collector
3. Emitter

(Pulse)

-65 ~150

ORDERING INFORMATION

Device

Operating Temperature

Package

PJ13007CZ

-20+85

TO-220

ELECTRICAL CHARACTERISTICS(Ta= 25 )
Characteristic
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage

*Base Emitter Saturation Voltage

Output Capacitance
Current Gain Bandwidth Product

Symbol
VCEO(SUS)

Test Condition
Ic = 10mA, IB = 0

Typ

Max

400

VEB =9V, Ic=0

hFE

VCE =5V, Ic =2A

60

VCE =5V, Ic =5A

30

VCE (sat)

VBE (sat)
C OB

mA

Ic =2A, IB =0.4A

Ic =5A, IB =1A

Ic =8A, IB =2A

Ic =2A, IB =0.4A

1.2

Ic =5A, IB =1A

1.6

VCB =10V, f =0.1MHz

VCE =10V, Ic =0.5A

Turn On Time

t on

VCC =125V, Ic =5A

Storage Time

ts

IB1 =IB2 =1A

Fall Time

tf

110

pF

MHz
1.6

0.7

Pulse Test: PW300 S, Duty Cycle 2 %

1-2

Unit
V

IEBO

fT

Min

2002/01.rev.A

PJ13007
NPN Epitaxial Silicon Transistor

2-2

2002/01.rev.A